Showing 1297–1308 of 2118 results
Transistors - IGBTs - Modules
Microsemi Corporation APT35GP120J
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Package / Case |
ISOTOP |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Series |
POWER MOS 7® |
Current Rating |
64A |
JESD-609 Code |
e1 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
284W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Mounting Type |
Chassis Mount |
Mount |
Chassis Mount, Screw |
Input Capacitance |
3.24nF |
Configuration |
Single |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
64A |
Current - Collector Cutoff (Max) |
250μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
36 ns |
Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 35A |
Pin Count |
4 |
Turn Off Time-Nom (toff) |
222 ns |
IGBT Type |
PT |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
3.24nF @ 25V |
Gate-Emitter Thr Voltage-Max |
6V |
RoHS Status |
RoHS Compliant |
Case Connection |
ISOLATED |
Lead Free |
Lead Free |
Microsemi Corporation APT35GP120JDQ2
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Series |
POWER MOS 7® |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
ISOTOP |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Terminal Position |
UPPER |
Factory Lead Time |
22 Weeks |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
284W |
Published |
1999 |
Terminal Form |
UNSPECIFIED |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
3.24nF |
Configuration |
Single |
Case Connection |
ISOLATED |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
3.9V |
Max Collector Current |
64A |
Current - Collector Cutoff (Max) |
350μA |
Current Rating |
64A |
Pin Count |
4 |
Turn On Time |
36 ns |
Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 35A |
Turn Off Time-Nom (toff) |
220 ns |
IGBT Type |
PT |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
30V |
Input Capacitance (Cies) @ Vce |
3.24nF @ 25V |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Microsemi Corporation APT35GT120JU2
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mounting Type |
Chassis Mount |
Package / Case |
ISOTOP |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Pin Count |
4 |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Max Power Dissipation |
260W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Case Connection |
ISOLATED |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
55A |
Current - Collector Cutoff (Max) |
5mA |
Input Capacitance |
2.53nF |
Turn On Time |
135 ns |
Configuration |
Single |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 35A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
2.53nF @ 25V |
Power - Max |
260W |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APT35GT120JU3
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
ISOTOP |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
4 |
Factory Lead Time |
36 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Max Power Dissipation |
260W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Published |
2004 |
Configuration |
Single |
Input Capacitance |
2.53nF |
Turn On Time |
135 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
55A |
Current - Collector Cutoff (Max) |
5mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Case Connection |
ISOLATED |
Power - Max |
260W |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 35A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
2.53nF @ 25V |
VCEsat-Max |
2.1 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APT40GF120JRDQ2
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Part Status |
Obsolete |
Mounting Type |
Chassis Mount |
Package / Case |
ISOTOP |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-55°C~150°C TJ |
Published |
1999 |
Pin Count |
4 |
Mount |
Chassis Mount, Screw |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
347W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Current Rating |
60A |
Pbfree Code |
no |
Configuration |
Single |
Input Capacitance |
3.46nF |
Turn On Time |
68 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
77A |
Current - Collector Cutoff (Max) |
500μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Case Connection |
ISOLATED |
Power - Max |
347W |
Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 40A |
Turn Off Time-Nom (toff) |
395 ns |
IGBT Type |
NPT |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
30V |
Input Capacitance (Cies) @ Vce |
3.46nF @ 25V |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Microsemi Corporation APT40GL120JU3
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Factory Lead Time |
36 Weeks |
Mount |
Chassis, Screw, Stud |
Mounting Type |
Chassis, Stud Mount |
Package / Case |
SOT-227-4, miniBLOC |
Number of Pins |
4 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~175°C TJ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
220W |
Configuration |
Single |
Power - Max |
220W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.25V |
Max Collector Current |
65A |
Current - Collector Cutoff (Max) |
250μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
1.95nF |
Vce(on) (Max) @ Vge, Ic |
2.25V @ 15V, 35A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
1.95nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APT40GLQ120JCU2
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Factory Lead Time |
22 Weeks |
Mount |
Chassis, Stud |
Mounting Type |
Chassis, Stud Mount |
Package / Case |
SOT-227-4, miniBLOC |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Turn Off Delay Time |
290 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
1997 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
312W |
Configuration |
Single |
Turn On Delay Time |
30 ns |
Power - Max |
312W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
80A |
Current - Collector Cutoff (Max) |
25μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
2.3nF |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
2.3nF @ 25V |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Microsemi Corporation APT40GP60JDQ2
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Series |
POWER MOS 7® |
Mounting Type |
Chassis Mount |
Package / Case |
SOT-227-4, miniBLOC |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Terminal Position |
UPPER |
Published |
1999 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
284W |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
30 Weeks |
Current - Collector Cutoff (Max) |
500μA |
Current Rating |
86A |
Configuration |
Single |
Case Connection |
ISOLATED |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
86A |
Input Capacitance |
4.61nF |
Turn On Time |
49 ns |
Terminal Form |
UNSPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 40A |
Turn Off Time-Nom (toff) |
160 ns |
IGBT Type |
PT |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
30V |
Input Capacitance (Cies) @ Vce |
4.61nF @ 25V |
RoHS Status |
RoHS Compliant |
Pin Count |
4 |
Lead Free |
Lead Free |
Microsemi Corporation APT40GP90JDQ2
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Published |
1999 |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
ISOTOP |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Terminal Position |
UPPER |
Factory Lead Time |
6 Weeks |
Series |
POWER MOS 7® |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Additional Feature |
UL RECOGNIZED |
Voltage - Rated DC |
900V |
Max Power Dissipation |
284W |
Operating Temperature |
-55°C~150°C TJ |
Terminal Form |
UNSPECIFIED |
Max Collector Current |
64A |
Current - Collector Cutoff (Max) |
350μA |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
284W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
900V |
Current Rating |
100A |
Pin Count |
4 |
Input Capacitance |
3.3nF |
Turn On Time |
37 ns |
Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 40A |
Turn Off Time-Nom (toff) |
220 ns |
IGBT Type |
PT |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
3.3nF @ 25V |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Microsemi Corporation APT45GP120J
In stock
Manufacturer |
Microsemi Corporation |
---|---|
JESD-609 Code |
e1 |
Mounting Type |
Chassis Mount |
Package / Case |
ISOTOP |
Number of Pins |
4 |
Weight |
30.000004g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Published |
1999 |
Current Rating |
75A |
Series |
POWER MOS 7® |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
329W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
17 Weeks |
Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 45A |
Configuration |
Single |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
75A |
Current - Collector Cutoff (Max) |
500μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
3.94nF |
Turn On Time |
47 ns |
Continuous Collector Current |
75A |
Turn Off Time-Nom (toff) |
230 ns |
Pin Count |
4 |
IGBT Type |
PT |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
3.94nF @ 25V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
9.6mm |
Length |
38.2mm |
Width |
25.4mm |
RoHS Status |
RoHS Compliant |
Case Connection |
ISOLATED |
Lead Free |
Lead Free |
Microsemi Corporation APT46GA90JD40
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Published |
1999 |
Mounting Type |
Chassis Mount |
Package / Case |
SOT-227-4, miniBLOC |
Number of Pins |
4 |
Weight |
30.000004g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Terminal Form |
UNSPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
Series |
POWER MOS 8™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Max Power Dissipation |
284W |
Terminal Position |
UPPER |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
29 Weeks |
Input Capacitance |
4.17nF |
Configuration |
Single |
Power - Max |
284W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
900V |
Max Collector Current |
87A |
Current - Collector Cutoff (Max) |
350μA |
Turn On Time |
44 ns |
Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 47A |
Pin Count |
4 |
Turn Off Time-Nom (toff) |
365 ns |
IGBT Type |
PT |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
4.17nF @ 25V |
Height |
9.6mm |
Length |
38.2mm |
Width |
25.4mm |
Case Connection |
ISOLATED |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APT50GF60JU2
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Number of Terminations |
4 |
Package / Case |
ISOTOP |
Number of Pins |
4 |
Weight |
30.000004g |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Configuration |
Single |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
277W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Pin Count |
4 |
Mounting Type |
Chassis Mount |
Mount |
Chassis Mount, Screw |
Turn Off Time-Nom (toff) |
450 ns |
Transistor Application |
POWER CONTROL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Current - Collector Cutoff (Max) |
40μA |
Input Capacitance |
2.25nF |
Turn On Time |
103 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 50A |
IGBT Type |
NPT |
NTC Thermistor |
No |
Case Connection |
ISOLATED |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
2.25nF @ 25V |
VCEsat-Max |
2.7 V |
Height |
9.6mm |
Length |
38.2mm |
Width |
25.4mm |
RoHS Status |
RoHS Compliant |
Polarity/Channel Type |
N-CHANNEL |
Lead Free |
Lead Free |