Showing 1441–1452 of 2118 results
Transistors - IGBTs - Modules
Microsemi Corporation APTGLQ50VDA65T3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Configuration |
Dual Boost Chopper |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
SP3F |
Current-Collector (Ic) (Max) |
70A |
Operating Temperature |
-40°C~175°C TJ |
Part Status |
Active |
Factory Lead Time |
36 Weeks |
Input |
Standard |
Power - Max |
175W |
Current - Collector Cutoff (Max) |
50μA |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 50A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
3.1nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGLQ75H120T3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Factory Lead Time |
36 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
SP1 |
Number of Pins |
1 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Turn Off Delay Time |
290 ns |
Operating Temperature |
-40°C~175°C TJ |
Published |
2012 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
385W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Configuration |
Full Bridge |
Turn On Delay Time |
30 ns |
Power - Max |
385W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
130A |
Current - Collector Cutoff (Max) |
50μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
4.4nF |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 75A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
4.4nF @ 25V |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Microsemi Corporation APTGT100A120D1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Package / Case |
D1 |
Number of Pins |
7 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
2 |
Published |
2010 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Pin Count |
7 |
Part Status |
Obsolete |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-40°C |
Max Power Dissipation |
520W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Mounting Type |
Chassis Mount |
Mount |
Chassis Mount, Screw |
Input Capacitance |
7nF |
Element Configuration |
Dual |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
150A |
Current - Collector Cutoff (Max) |
3mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
400 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Configuration |
Half Bridge |
Turn Off Time-Nom (toff) |
830 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
7nF @ 25V |
VCEsat-Max |
6.5 V |
RoHS Status |
RoHS Compliant |
Case Connection |
ISOLATED |
Lead Free |
Lead Free |
Microsemi Corporation APTGT100A120TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP4 |
Number of Pins |
20 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
2 |
Operating Temperature |
-40°C~150°C TJ |
Published |
2011 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
36 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
480W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
JESD-609 Code |
e1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
140A |
Current - Collector Cutoff (Max) |
250μA |
Qualification Status |
Not Qualified |
Configuration |
Half Bridge |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Pin Count |
12 |
JESD-30 Code |
R-XUFM-X12 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
7.2nF |
Turn On Time |
340 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
7.2nF @ 25V |
VCEsat-Max |
2.1 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100BB60T3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Configuration |
Half Bridge |
Mount |
Screw, Through Hole |
Mounting Type |
Through Hole |
Package / Case |
SP3 |
Number of Pins |
16 |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~175°C TJ |
Published |
2012 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
340W |
Factory Lead Time |
36 Weeks |
Power - Max |
340W |
Element Configuration |
Dual |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
150A |
Current - Collector Cutoff (Max) |
250μA |
Input Capacitance |
6.1nF |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 100A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
6.1nF @ 25V |
VCEsat-Max |
1.9 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100DA120T1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
JESD-609 Code |
e1 |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP1 |
Number of Pins |
12 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-40°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
36 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Power Dissipation |
480W |
Terminal Position |
UPPER |
Terminal Form |
THROUGH-HOLE |
Published |
2007 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Current - Collector Cutoff (Max) |
250μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
140A |
Pin Count |
12 |
Qualification Status |
Not Qualified |
Input Capacitance |
7.2nF |
Turn On Time |
340 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
7.2nF @ 25V |
VCEsat-Max |
2.1 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100DA120TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
SP4 |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-40°C~150°C TJ |
Published |
2006 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e1 |
Number of Terminations |
12 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
480W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Mounting Type |
Chassis Mount |
Mount |
Chassis Mount |
Current - Collector Cutoff (Max) |
250μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
140A |
JESD-30 Code |
R-XUFM-X12 |
Pin Count |
12 |
Input Capacitance |
7.2nF |
Turn On Time |
340 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
7.2nF @ 25V |
Qualification Status |
Not Qualified |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100DA170D1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Package / Case |
D1 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Operating Temperature |
-40°C~150°C TJ |
Published |
2004 |
Pin Count |
7 |
JESD-609 Code |
e1 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
Terminal Finish |
TIN SILVER COPPER |
Max Power Dissipation |
695W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Mounting Type |
Chassis Mount |
Mount |
Chassis Mount |
Current - Collector Cutoff (Max) |
3mA |
Configuration |
Single |
Power - Max |
695W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
200A |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Input Capacitance |
8.5nF |
JESD-30 Code |
R-XUFM-X7 |
Turn On Time |
400 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 100A |
Turn Off Time-Nom (toff) |
1200 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
8.5nF @ 25V |
Case Connection |
ISOLATED |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100DA170TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mounting Type |
Chassis Mount |
Package / Case |
SP4 |
Number of Pins |
20 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Operating Temperature |
-40°C~150°C TJ |
Published |
2006 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
JESD-609 Code |
e1 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
560W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
22 Weeks |
Max Collector Current |
150A |
Pin Count |
12 |
Qualification Status |
Not Qualified |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
560W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.7kV |
Current - Collector Cutoff (Max) |
250μA |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Capacitance |
9nF |
Turn On Time |
450 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 100A |
Turn Off Time-Nom (toff) |
1100 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
9nF @ 25V |
VCEsat-Max |
2.4 V |
JESD-30 Code |
R-XUFM-X12 |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100DA60T1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Chassis Mount |
Package / Case |
SP1 |
Number of Pins |
12 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature |
-40°C~175°C TJ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Published |
2007 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Power Dissipation |
340W |
Terminal Position |
UPPER |
Terminal Form |
THROUGH-HOLE |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Current - Collector Cutoff (Max) |
250μA |
Input Capacitance |
6.1nF |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
340W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
150A |
Pin Count |
12 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 100A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
6.1nF @ 25V |
VCEsat-Max |
1.9 V |
Qualification Status |
Not Qualified |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100DA60TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mounting Type |
Chassis Mount |
Package / Case |
SP4 |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature |
-40°C~175°C TJ |
Published |
2006 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Chassis Mount |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
340W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
JESD-609 Code |
e1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
150A |
Current - Collector Cutoff (Max) |
250μA |
Qualification Status |
Not Qualified |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
340W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.9V |
Pin Count |
12 |
JESD-30 Code |
R-XUFM-X12 |
Input Capacitance |
6.1nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 100A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
6.1nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100DSK60T3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~175°C TJ |
Published |
2006 |
JESD-609 Code |
e1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Chassis Mount |
Number of Terminations |
25 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
340W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Part Status |
Obsolete |
Pin Count |
25 |
Max Collector Current |
150A |
Current - Collector Cutoff (Max) |
250μA |
Configuration |
Dual Buck Chopper |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Power - Max |
340W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.9V |
JESD-30 Code |
R-XUFM-X25 |
Qualification Status |
Not Qualified |
Input Capacitance |
6.1nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 100A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
6.1nF @ 25V |
RoHS Status |
RoHS Compliant |