Showing 1453–1464 of 2118 results
Transistors - IGBTs - Modules
Microsemi Corporation APTGT100DU120TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP4 |
Number of Pins |
20 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
2 |
Operating Temperature |
-40°C~150°C TJ |
Published |
2006 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
36 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
480W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
JESD-609 Code |
e1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
140A |
Current - Collector Cutoff (Max) |
250μA |
Qualification Status |
Not Qualified |
Configuration |
Dual, Common Source |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Pin Count |
12 |
JESD-30 Code |
R-XUFM-X12 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
7.2nF |
Turn On Time |
340 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
7.2nF @ 25V |
VCEsat-Max |
2.1 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100H120G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
12 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-40°C~150°C TJ |
Terminal Form |
UNSPECIFIED |
Factory Lead Time |
36 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
480W |
Terminal Position |
UPPER |
JESD-609 Code |
e1 |
Pin Count |
12 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
7.2nF |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
140A |
Current - Collector Cutoff (Max) |
250μA |
Configuration |
Full Bridge Inverter |
Case Connection |
ISOLATED |
Turn On Time |
340 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
7.2nF @ 25V |
VCEsat-Max |
2.1 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100H60T3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
JESD-609 Code |
e1 |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Number of Pins |
32 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
4 |
Turn Off Delay Time |
225 ns |
Operating Temperature |
-40°C~175°C TJ |
JESD-30 Code |
R-XUFM-X25 |
Factory Lead Time |
36 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
25 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Power Dissipation |
340W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Pin Count |
25 |
Published |
2006 |
Configuration |
Full Bridge Inverter |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 100A |
Turn Off Time-Nom (toff) |
370 ns |
Power - Max |
340W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
150A |
Current - Collector Cutoff (Max) |
250μA |
Input Capacitance |
6.1nF |
Turn On Time |
180 ns |
Case Connection |
ISOLATED |
Turn On Delay Time |
115 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
6.1nF @ 25V |
VCEsat-Max |
1.9 V |
Height |
11.5mm |
Length |
73.4mm |
Width |
40.8mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Microsemi Corporation APTGT100SK170D1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
D1 |
Collector-Emitter Breakdown Voltage |
1.7kV |
Operating Temperature |
-40°C~150°C TJ |
Published |
2004 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
695W |
Configuration |
Single |
Power - Max |
695W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
200A |
Current - Collector Cutoff (Max) |
3mA |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Input Capacitance |
8.5nF |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 100A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
8.5nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100SK170TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mounting Type |
Chassis Mount |
Package / Case |
SP4 |
Number of Pins |
20 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Operating Temperature |
-40°C~150°C TJ |
Published |
2006 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
JESD-609 Code |
e1 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
560W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Max Collector Current |
150A |
Pin Count |
12 |
Qualification Status |
Not Qualified |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
560W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.7kV |
Current - Collector Cutoff (Max) |
250μA |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Capacitance |
9nF |
Turn On Time |
450 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 100A |
Turn Off Time-Nom (toff) |
1100 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
9nF @ 25V |
VCEsat-Max |
2.4 V |
JESD-30 Code |
R-XUFM-X12 |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT100SK60TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mounting Type |
Chassis Mount |
Package / Case |
SP4 |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature |
-40°C~175°C TJ |
Published |
2006 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Chassis Mount |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
340W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
JESD-609 Code |
e1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
150A |
Current - Collector Cutoff (Max) |
250μA |
Qualification Status |
Not Qualified |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
340W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.9V |
Pin Count |
12 |
JESD-30 Code |
R-XUFM-X12 |
Input Capacitance |
6.1nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 100A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
6.1nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150A1202G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Configuration |
Half Bridge |
Mounting Type |
Chassis Mount |
Package / Case |
SP2 |
Number of Pins |
2 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-40°C~150°C TJ |
Published |
2012 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
690W |
Mount |
Chassis Mount, Screw |
Power - Max |
690W |
Element Configuration |
Dual |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
220A |
Current - Collector Cutoff (Max) |
50μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
10.7nF |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 150A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
10.7nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150A120G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
7 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
2 |
Published |
2006 |
Max Power Dissipation |
690W |
Factory Lead Time |
36 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-40°C |
Additional Feature |
AVALANCHE RATED |
JESD-609 Code |
e1 |
Terminal Position |
UPPER |
Max Collector Current |
220A |
Current - Collector Cutoff (Max) |
350μA |
Configuration |
Half Bridge |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Terminal Form |
UNSPECIFIED |
Pin Count |
7 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
10.7nF |
Turn On Time |
335 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 150A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
10.7nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150A170G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
7 |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
2 |
Published |
2006 |
Max Power Dissipation |
890W |
Factory Lead Time |
22 Weeks |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-40°C |
Additional Feature |
AVALANCHE RATED |
JESD-609 Code |
e1 |
Terminal Position |
UPPER |
Max Collector Current |
250A |
Current - Collector Cutoff (Max) |
350μA |
Configuration |
Half Bridge |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.7kV |
Terminal Form |
UNSPECIFIED |
Pin Count |
7 |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Input Capacitance |
13.5nF |
Turn On Time |
450 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 150A |
Turn Off Time-Nom (toff) |
1100 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
13.5nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150A60T1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
JESD-609 Code |
e1 |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP1 |
Number of Pins |
12 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
2 |
Operating Temperature |
-40°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
36 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Power Dissipation |
480W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Published |
2007 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
225A |
Current - Collector Cutoff (Max) |
250μA |
Configuration |
Half Bridge |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
12 |
Qualification Status |
Not Qualified |
Input Capacitance |
9.2nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 150A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
9.2nF @ 25V |
VCEsat-Max |
1.9 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150A60T3AG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Part Status |
Active |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Number of Pins |
20 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~175°C TJ |
Pin Count |
25 |
Factory Lead Time |
36 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
10 |
ECCN Code |
EAR99 |
Max Power Dissipation |
600W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2012 |
JESD-30 Code |
R-XUFM-X10 |
Max Collector Current |
225A |
Current - Collector Cutoff (Max) |
250μA |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Power - Max |
600W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Qualification Status |
Not Qualified |
Configuration |
Half Bridge |
Input Capacitance |
9.2nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 150A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
9.2nF @ 25V |
VCEsat-Max |
1.9 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150DA120D1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Chassis Mount |
Package / Case |
D1 |
Number of Pins |
5 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Published |
2012 |
Terminal Form |
UNSPECIFIED |
Mount |
Chassis Mount, Screw |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-40°C |
Max Power Dissipation |
700W |
Terminal Position |
UPPER |
Part Status |
Obsolete |
Pin Count |
7 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
10.8nF |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
220A |
Current - Collector Cutoff (Max) |
4mA |
Configuration |
Single |
Case Connection |
ISOLATED |
Turn On Time |
400 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 150A |
Turn Off Time-Nom (toff) |
830 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
10.8nF @ 25V |
RoHS Status |
RoHS Compliant |