Showing 1453–1464 of 2118 results

Transistors - IGBTs - Modules

Microsemi Corporation APTGT100DU120TG

In stock

SKU: APTGT100DU120TG-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Published

2006

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

480W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

JESD-609 Code

e1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

140A

Current - Collector Cutoff (Max)

250μA

Qualification Status

Not Qualified

Configuration

Dual, Common Source

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

480W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Pin Count

12

JESD-30 Code

R-XUFM-X12

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

7.2nF

Turn On Time

340 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 100A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

7.2nF @ 25V

VCEsat-Max

2.1 V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT100H120G

In stock

SKU: APTGT100H120G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

-40°C~150°C TJ

Terminal Form

UNSPECIFIED

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

480W

Terminal Position

UPPER

JESD-609 Code

e1

Pin Count

12

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

7.2nF

Power - Max

480W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

140A

Current - Collector Cutoff (Max)

250μA

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Turn On Time

340 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 100A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

7.2nF @ 25V

VCEsat-Max

2.1 V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT100H60T3G

In stock

SKU: APTGT100H60T3G-9
Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

32

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

4

Turn Off Delay Time

225 ns

Operating Temperature

-40°C~175°C TJ

JESD-30 Code

R-XUFM-X25

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

340W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Pin Count

25

Published

2006

Configuration

Full Bridge Inverter

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 100A

Turn Off Time-Nom (toff)

370 ns

Power - Max

340W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

150A

Current - Collector Cutoff (Max)

250μA

Input Capacitance

6.1nF

Turn On Time

180 ns

Case Connection

ISOLATED

Turn On Delay Time

115 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

6.1nF @ 25V

VCEsat-Max

1.9 V

Height

11.5mm

Length

73.4mm

Width

40.8mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Microsemi Corporation APTGT100SK170D1G

In stock

SKU: APTGT100SK170D1G-9
Manufacturer

Microsemi Corporation

Mount

Chassis Mount

Mounting Type

Chassis Mount

Package / Case

D1

Collector-Emitter Breakdown Voltage

1.7kV

Operating Temperature

-40°C~150°C TJ

Published

2004

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

695W

Configuration

Single

Power - Max

695W

Input

Standard

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

200A

Current - Collector Cutoff (Max)

3mA

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

8.5nF

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 100A

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

8.5nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT100SK170TG

In stock

SKU: APTGT100SK170TG-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Published

2006

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JESD-609 Code

e1

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

560W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Max Collector Current

150A

Pin Count

12

Qualification Status

Not Qualified

Configuration

Single

Case Connection

ISOLATED

Power - Max

560W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1700V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Capacitance

9nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 100A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

9nF @ 25V

VCEsat-Max

2.4 V

JESD-30 Code

R-XUFM-X12

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT100SK60TG

In stock

SKU: APTGT100SK60TG-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature

-40°C~175°C TJ

Published

2006

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Chassis Mount

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

340W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

JESD-609 Code

e1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

150A

Current - Collector Cutoff (Max)

250μA

Qualification Status

Not Qualified

Configuration

Single

Case Connection

ISOLATED

Power - Max

340W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.9V

Pin Count

12

JESD-30 Code

R-XUFM-X12

Input Capacitance

6.1nF

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 100A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

6.1nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150A1202G

In stock

SKU: APTGT150A1202G-9
Manufacturer

Microsemi Corporation

Configuration

Half Bridge

Mounting Type

Chassis Mount

Package / Case

SP2

Number of Pins

2

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

-40°C~150°C TJ

Published

2012

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

690W

Mount

Chassis Mount, Screw

Power - Max

690W

Element Configuration

Dual

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

220A

Current - Collector Cutoff (Max)

50μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

10.7nF

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 150A

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

10.7nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150A120G

In stock

SKU: APTGT150A120G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

7

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Published

2006

Max Power Dissipation

690W

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Additional Feature

AVALANCHE RATED

JESD-609 Code

e1

Terminal Position

UPPER

Max Collector Current

220A

Current - Collector Cutoff (Max)

350μA

Configuration

Half Bridge

Element Configuration

Dual

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Terminal Form

UNSPECIFIED

Pin Count

7

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

10.7nF

Turn On Time

335 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 150A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

10.7nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150A170G

In stock

SKU: APTGT150A170G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

7

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

2

Published

2006

Max Power Dissipation

890W

Factory Lead Time

22 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Additional Feature

AVALANCHE RATED

JESD-609 Code

e1

Terminal Position

UPPER

Max Collector Current

250A

Current - Collector Cutoff (Max)

350μA

Configuration

Half Bridge

Element Configuration

Dual

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Terminal Form

UNSPECIFIED

Pin Count

7

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

13.5nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 150A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

13.5nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150A60T1G

In stock

SKU: APTGT150A60T1G-9
Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

2

Operating Temperature

-40°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

480W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Published

2007

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

225A

Current - Collector Cutoff (Max)

250μA

Configuration

Half Bridge

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

480W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Pin Count

12

Qualification Status

Not Qualified

Input Capacitance

9.2nF

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 150A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

9.2nF @ 25V

VCEsat-Max

1.9 V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150A60T3AG

In stock

SKU: APTGT150A60T3AG-9
Manufacturer

Microsemi Corporation

Part Status

Active

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Operating Temperature

-40°C~175°C TJ

Pin Count

25

Factory Lead Time

36 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

10

ECCN Code

EAR99

Max Power Dissipation

600W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2012

JESD-30 Code

R-XUFM-X10

Max Collector Current

225A

Current - Collector Cutoff (Max)

250μA

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

600W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Qualification Status

Not Qualified

Configuration

Half Bridge

Input Capacitance

9.2nF

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 150A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

9.2nF @ 25V

VCEsat-Max

1.9 V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DA120D1G

In stock

SKU: APTGT150DA120D1G-9
Manufacturer

Microsemi Corporation

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Chassis Mount

Package / Case

D1

Number of Pins

5

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Published

2012

Terminal Form

UNSPECIFIED

Mount

Chassis Mount, Screw

Number of Terminations

5

ECCN Code

EAR99

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Max Power Dissipation

700W

Terminal Position

UPPER

Part Status

Obsolete

Pin Count

7

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

10.8nF

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

220A

Current - Collector Cutoff (Max)

4mA

Configuration

Single

Case Connection

ISOLATED

Turn On Time

400 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 150A

Turn Off Time-Nom (toff)

830 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

10.8nF @ 25V

RoHS Status

RoHS Compliant