Showing 1465–1476 of 2118 results

Transistors - IGBTs - Modules

Microsemi Corporation APTGT150DA120G

In stock

SKU: APTGT150DA120G-9
Manufacturer

Microsemi Corporation

Max Power Dissipation

690W

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

5

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Published

2006

Pbfree Code

yes

Part Status

Active

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Additional Feature

AVALANCHE RATED

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Current - Collector Cutoff (Max)

350μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Configuration

Single

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

220A

Terminal Form

UNSPECIFIED

Terminal Position

UPPER

Input Capacitance

10.7nF

Turn On Time

335 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 150A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

10.7nF @ 25V

Pin Count

5

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DA170D1G

In stock

SKU: APTGT150DA170D1G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Package / Case

D1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Published

2004

Pin Count

7

JESD-609 Code

e1

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

780W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Mounting Type

Chassis Mount

Mount

Chassis Mount

Current - Collector Cutoff (Max)

4mA

Configuration

Single

Power - Max

780W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

280A

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

13nF

JESD-30 Code

R-XUFM-X7

Turn On Time

430 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 150A

Turn Off Time-Nom (toff)

1200 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

13nF @ 25V

Case Connection

ISOLATED

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DA170G

In stock

SKU: APTGT150DA170G-9
Manufacturer

Microsemi Corporation

Max Power Dissipation

890W

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

5

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Published

2006

Pbfree Code

yes

Part Status

Obsolete

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Additional Feature

AVALANCHE RATED

Mount

Chassis Mount, Screw

Factory Lead Time

22 Weeks

Current - Collector Cutoff (Max)

350μA

Voltage - Collector Emitter Breakdown (Max)

1700V

Configuration

Single

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

250A

Terminal Form

UNSPECIFIED

Terminal Position

UPPER

Input Capacitance

13.5nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 150A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

13.5nF @ 25V

Pin Count

5

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DA60T1G

In stock

SKU: APTGT150DA60T1G-9
Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature

-40°C~175°C TJ

Terminal Form

THROUGH-HOLE

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

480W

Terminal Position

UPPER

Published

2007

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Max Collector Current

225A

Current - Collector Cutoff (Max)

250μA

Qualification Status

Not Qualified

Configuration

Single

Case Connection

ISOLATED

Power - Max

480W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.9V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

12

Input Capacitance

9.2nF

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 150A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

9.2nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DA60TG

In stock

SKU: APTGT150DA60TG-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature

-40°C~175°C TJ

Published

2006

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Chassis Mount

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

480W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

JESD-609 Code

e1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

225A

Current - Collector Cutoff (Max)

250μA

Qualification Status

Not Qualified

Configuration

Single

Case Connection

ISOLATED

Power - Max

480W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.9V

Pin Count

12

JESD-30 Code

R-XUFM-X12

Input Capacitance

9.2nF

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 150A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

9.2nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DH120G

In stock

SKU: APTGT150DH120G-9
Manufacturer

Microsemi Corporation

Terminal Position

UPPER

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

8

Collector-Emitter Breakdown Voltage

1.2kV

Published

2006

JESD-609 Code

e1

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Pbfree Code

yes

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Additional Feature

AVALANCHE RATED

Max Power Dissipation

690W

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Current - Collector Cutoff (Max)

350μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Element Configuration

Dual

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

220A

Pin Count

8

Terminal Form

UNSPECIFIED

Input Capacitance

10.7nF

Turn On Time

335 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 150A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

10.7nF @ 25V

Configuration

Asymmetrical Bridge

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DH170G

In stock

SKU: APTGT150DH170G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

8

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

2

Published

2006

Max Power Dissipation

890W

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Additional Feature

AVALANCHE RATED

JESD-609 Code

e1

Terminal Position

UPPER

Max Collector Current

250A

Current - Collector Cutoff (Max)

350μA

Configuration

Asymmetrical Bridge

Element Configuration

Dual

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Terminal Form

UNSPECIFIED

Pin Count

8

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

13.5nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 150A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

13.5nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DH60TG

In stock

SKU: APTGT150DH60TG-9
Manufacturer

Microsemi Corporation

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

2

Operating Temperature

-40°C~175°C TJ

Pbfree Code

yes

Part Status

Active

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

14

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

480W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

225A

Qualification Status

Not Qualified

Configuration

Asymmetrical Bridge

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

480W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Pin Count

14

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Current - Collector Cutoff (Max)

250μA

Input Capacitance

9.2nF

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 150A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

9.2nF @ 25V

JESD-30 Code

R-XUFM-X14

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DU120G

In stock

SKU: APTGT150DU120G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

7

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Published

2006

Max Power Dissipation

690W

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Additional Feature

AVALANCHE RATED

JESD-609 Code

e1

Terminal Position

UPPER

Max Collector Current

220A

Current - Collector Cutoff (Max)

350μA

Configuration

Dual, Common Source

Element Configuration

Dual

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Terminal Form

UNSPECIFIED

Pin Count

7

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

10.7nF

Turn On Time

335 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 150A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

10.7nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DU120TG

In stock

SKU: APTGT150DU120TG-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

690W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

JESD-609 Code

e1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

220A

Qualification Status

Not Qualified

Configuration

Dual, Common Source

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

690W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Pin Count

12

JESD-30 Code

R-XUFM-X12

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

10.7nF

Turn On Time

335 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 150A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

10.7nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150DU170G

In stock

SKU: APTGT150DU170G-9
Manufacturer

Microsemi Corporation

Part Status

Obsolete

Package / Case

SP6

Number of Pins

6

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Published

2006

JESD-30 Code

R-XUFM-X7

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

890W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Pin Count

7

Mounting Type

Chassis Mount

Mount

Chassis Mount, Screw

Voltage - Collector Emitter Breakdown (Max)

1700V

Element Configuration

Dual

Power - Max

890W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

250A

Current - Collector Cutoff (Max)

350μA

Input Capacitance

13.5nF

Turn On Time

450 ns

Configuration

Dual, Common Source

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 150A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

13.5nF @ 25V

VCEsat-Max

2.4 V

Case Connection

ISOLATED

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT150H170G

In stock

SKU: APTGT150H170G-9
Manufacturer

Microsemi Corporation

Published

2006

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

4

Max Power Dissipation

890W

Factory Lead Time

36 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Operating Temperature

-40°C~150°C TJ

Terminal Position

UPPER

Max Collector Current

250A

Current - Collector Cutoff (Max)

350μA

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Power - Max

890W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Terminal Form

UNSPECIFIED

Pin Count

12

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

13.5nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 150A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

13.5nF @ 25V

RoHS Status

RoHS Compliant