Showing 1477–1488 of 2118 results
Transistors - IGBTs - Modules
Microsemi Corporation APTGT150H60TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
JESD-609 Code |
e1 |
Mounting Type |
Chassis Mount |
Package / Case |
SP4 |
Number of Pins |
20 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
4 |
Operating Temperature |
-40°C~175°C TJ |
Terminal Position |
UPPER |
Published |
2006 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
14 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
480W |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Max Collector Current |
225A |
Pin Count |
14 |
Configuration |
Full Bridge Inverter |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Current - Collector Cutoff (Max) |
250μA |
Input Capacitance |
9.2nF |
Terminal Form |
UNSPECIFIED |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 150A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
9.2nF @ 25V |
Radiation Hardening |
No |
JESD-30 Code |
R-XUFM-X14 |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150SK120D1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
D1 |
Number of Pins |
5 |
Supplier Device Package |
D1 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Current-Collector (Ic) (Max) |
220A |
Published |
2012 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-40°C |
Max Power Dissipation |
700W |
Configuration |
Single |
Element Configuration |
Single |
Power - Max |
700W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
220A |
Current - Collector Cutoff (Max) |
4mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
10.8nF |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 150A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
10.8nF @ 25V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150SK120TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
SP4 |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-40°C~150°C TJ |
Published |
2006 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e1 |
Number of Terminations |
12 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
690W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Mounting Type |
Chassis Mount |
Mount |
Chassis Mount |
Current - Collector Cutoff (Max) |
350μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
690W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
220A |
JESD-30 Code |
R-XUFM-X12 |
Pin Count |
12 |
Input Capacitance |
10.7nF |
Turn On Time |
335 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 150A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
10.7nF @ 25V |
Qualification Status |
Not Qualified |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150SK170G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Terminal Position |
UPPER |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
5 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Operating Temperature |
-40°C~150°C TJ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Published |
2006 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
890W |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Current - Collector Cutoff (Max) |
350μA |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Case Connection |
ISOLATED |
Power - Max |
890W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
250A |
Pin Count |
5 |
Terminal Form |
UNSPECIFIED |
Input Capacitance |
13.5nF |
Turn On Time |
450 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 150A |
Turn Off Time-Nom (toff) |
1100 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
13.5nF @ 25V |
Configuration |
Single |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150SK60T1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP1 |
Number of Pins |
1 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
36 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Power Dissipation |
480W |
Terminal Position |
UPPER |
Terminal Form |
THROUGH-HOLE |
JESD-609 Code |
e1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
225A |
Current - Collector Cutoff (Max) |
250μA |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.9V |
Pin Count |
12 |
Qualification Status |
Not Qualified |
Input Capacitance |
9.2nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 150A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
9.2nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150TA60PG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Max Power Dissipation |
480W |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
21 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
6 |
Published |
2006 |
JESD-609 Code |
e1 |
Operating Temperature |
-40°C~175°C TJ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
21 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Max Collector Current |
225A |
Current - Collector Cutoff (Max) |
250μA |
Configuration |
Three Phase |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Terminal Form |
UNSPECIFIED |
Terminal Position |
UPPER |
Input Capacitance |
9.2nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 150A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
9.2nF @ 25V |
Pin Count |
21 |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150TDU60PG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Terminal Position |
UPPER |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
6 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~175°C TJ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Published |
2006 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
21 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
480W |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Max Collector Current |
225A |
Current - Collector Cutoff (Max) |
250μA |
Configuration |
Triple, Dual – Common Source |
Case Connection |
ISOLATED |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.9V |
Pin Count |
21 |
Terminal Form |
UNSPECIFIED |
Input Capacitance |
9.2nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 150A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
9.2nF @ 25V |
JESD-30 Code |
R-XUFM-X21 |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT150TL60G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Published |
2009 |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
12 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Pin Count |
12 |
Factory Lead Time |
36 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Max Power Dissipation |
480W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Operating Temperature |
-40°C~175°C TJ |
Configuration |
Three Level Inverter |
Input Capacitance |
9.2nF |
Turn On Time |
180 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
200A |
Current - Collector Cutoff (Max) |
250μA |
Case Connection |
ISOLATED |
Power - Max |
480W |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 150A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
9.2nF @ 25V |
VCEsat-Max |
1.9 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT200A120G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
JESD-609 Code |
e1 |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
7 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
2 |
Operating Temperature |
-40°C~150°C TJ |
Terminal Position |
UPPER |
Published |
2006 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
890W |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Max Collector Current |
280A |
Pin Count |
7 |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Power - Max |
890W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Current - Collector Cutoff (Max) |
350μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Terminal Form |
UNSPECIFIED |
Input Capacitance |
14nF |
Turn On Time |
340 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 200A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
14nF @ 25V |
Configuration |
Half Bridge |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT200A60TG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Package / Case |
SP4 |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
2 |
Operating Temperature |
-40°C~175°C TJ |
Published |
2006 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
JESD-609 Code |
e1 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
625W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Mounting Type |
Chassis Mount |
Mount |
Chassis Mount |
Collector Emitter Voltage (VCEO) |
1.9V |
Pin Count |
12 |
Qualification Status |
Not Qualified |
Configuration |
Half Bridge |
Case Connection |
ISOLATED |
Power - Max |
625W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Max Collector Current |
290A |
Current - Collector Cutoff (Max) |
250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Capacitance |
12.3nF |
Turn On Time |
180 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 200A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
12.3nF @ 25V |
JESD-30 Code |
R-XUFM-X12 |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT200DA120D3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Published |
2012 |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
D-3 Module |
Number of Pins |
5 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Terminal Position |
UPPER |
Factory Lead Time |
36 Weeks |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Power Dissipation |
1.05kW |
Operating Temperature |
-40°C~150°C TJ |
Terminal Form |
UNSPECIFIED |
Max Collector Current |
300A |
Current - Collector Cutoff (Max) |
6mA |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
1050W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Pin Count |
7 |
JESD-30 Code |
R-XUFM-X7 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
14nF |
Turn On Time |
400 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 200A |
Turn Off Time-Nom (toff) |
830 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
14nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT200DA60T3AG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Part Status |
Active |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Number of Pins |
32 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature |
-40°C~175°C TJ |
Pin Count |
25 |
Published |
2012 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Max Power Dissipation |
750W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Current - Collector Cutoff (Max) |
250μA |
Qualification Status |
Not Qualified |
Case Connection |
ISOLATED |
Power - Max |
750W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
290A |
Input Capacitance |
12.3nF |
Turn On Time |
180 ns |
JESD-30 Code |
R-XUFM-X8 |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 200A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
12.3nF @ 25V |
VCEsat-Max |
1.9 V |
Configuration |
Single |
RoHS Status |
RoHS Compliant |