Showing 1513–1524 of 2118 results

Transistors - IGBTs - Modules

Microsemi Corporation APTGT300DH60G

In stock

SKU: APTGT300DH60G-9
Manufacturer

Microsemi Corporation

Terminal Position

UPPER

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

8

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Operating Temperature

-40°C~175°C TJ

JESD-609 Code

e1

Pbfree Code

yes

Published

2006

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

1.15kW

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Max Collector Current

430A

Current - Collector Cutoff (Max)

350μA

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

1150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Pin Count

8

Terminal Form

UNSPECIFIED

Input Capacitance

24nF

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 300A

Turn Off Time-Nom (toff)

320 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

24nF @ 25V

Configuration

Asymmetrical Bridge

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT300H60G

In stock

SKU: APTGT300H60G-9
Manufacturer

Microsemi Corporation

Max Power Dissipation

1.15kW

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

4

Published

2012

JESD-609 Code

e1

Operating Temperature

-40°C~175°C TJ

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Max Collector Current

430A

Current - Collector Cutoff (Max)

350μA

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Power - Max

1150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Terminal Form

UNSPECIFIED

Terminal Position

UPPER

Input Capacitance

24nF

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 300A

Turn Off Time-Nom (toff)

320 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

24nF @ 25V

Pin Count

12

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT300SK120G

In stock

SKU: APTGT300SK120G-9
Manufacturer

Microsemi Corporation

Terminal Position

UPPER

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

5

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

-40°C~150°C TJ

JESD-609 Code

e1

Pbfree Code

yes

Published

2012

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

1.38kW

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Current - Collector Cutoff (Max)

500μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Case Connection

ISOLATED

Power - Max

1380W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

420A

Pin Count

5

Terminal Form

UNSPECIFIED

Input Capacitance

21nF

Turn On Time

340 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 300A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

21nF @ 25V

Configuration

Single

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT300SK170D3G

In stock

SKU: APTGT300SK170D3G-9
Manufacturer

Microsemi Corporation

Published

2012

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

D-3 Module

Number of Pins

5

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Terminal Position

UPPER

Factory Lead Time

22 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

1.47kW

Operating Temperature

-40°C~150°C TJ

Terminal Form

UNSPECIFIED

Max Collector Current

530A

Current - Collector Cutoff (Max)

8mA

Configuration

Single

Case Connection

ISOLATED

Power - Max

1470W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Pin Count

7

JESD-30 Code

R-XUFM-X7

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

26nF

Turn On Time

430 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 300A

Turn Off Time-Nom (toff)

1200 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

26nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT300SK170G

In stock

SKU: APTGT300SK170G-9
Manufacturer

Microsemi Corporation

Published

2006

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

5

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Max Power Dissipation

1.66kW

Factory Lead Time

36 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Operating Temperature

-40°C~150°C TJ

Terminal Position

UPPER

Max Collector Current

400A

Current - Collector Cutoff (Max)

750μA

Configuration

Single

Case Connection

ISOLATED

Power - Max

1660W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Terminal Form

UNSPECIFIED

Pin Count

5

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

26.5nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 300A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

26.5nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT300SK60D3G

In stock

SKU: APTGT300SK60D3G-9
Manufacturer

Microsemi Corporation

Part Status

Active

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

D-3 Module

Number of Pins

5

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Terminal Form

UNSPECIFIED

Factory Lead Time

36 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Max Operating Temperature

175°C

Min Operating Temperature

-40°C

Max Power Dissipation

940W

Terminal Position

UPPER

Published

2011

Pin Count

11

Input Capacitance

18.5nF

Turn On Time

190 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

400A

Current - Collector Cutoff (Max)

500μA

Configuration

Single

Case Connection

ISOLATED

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 300A

Turn Off Time-Nom (toff)

600 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

18.5nF @ 25V

VCEsat-Max

1.9 V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT30A170T1G

In stock

SKU: APTGT30A170T1G-9
Manufacturer

Microsemi Corporation

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Operating Temperature

-40°C~150°C TJ

Published

2012

Pbfree Code

yes

Part Status

Active

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

210W

Terminal Position

UPPER

Terminal Form

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1700V

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

210W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

45A

Qualification Status

Not Qualified

Pin Count

12

Input Capacitance

2.5nF

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Turn Off Time-Nom (toff)

850 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

2.5nF @ 25V

Configuration

Half Bridge

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT30DA170D1G

In stock

SKU: APTGT30DA170D1G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Package / Case

D1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Published

2007

Pin Count

7

JESD-609 Code

e1

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

210W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Mounting Type

Chassis Mount

Mount

Chassis Mount

Current - Collector Cutoff (Max)

3mA

Configuration

Single

Power - Max

210W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

45A

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

2.5nF

JESD-30 Code

R-XUFM-X7

Turn On Time

330 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Turn Off Time-Nom (toff)

965 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

2.5nF @ 25V

Case Connection

ISOLATED

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT30DA170T1G

In stock

SKU: APTGT30DA170T1G-9
Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Terminal Form

THROUGH-HOLE

Published

2012

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

210W

Terminal Position

UPPER

Mount

Chassis Mount, Screw

Factory Lead Time

22 Weeks

Voltage - Collector Emitter Breakdown (Max)

1700V

Configuration

Single

Power - Max

210W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

45A

Current - Collector Cutoff (Max)

250μA

Input Capacitance

2.5nF

Turn On Time

170 ns

Pin Count

12

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Turn Off Time-Nom (toff)

850 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

2.5nF @ 25V

Radiation Hardening

No

Case Connection

ISOLATED

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT30DDA60T3G

In stock

SKU: APTGT30DDA60T3G-9
Manufacturer

Microsemi Corporation

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

SP3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

2

Operating Temperature

-40°C~175°C TJ

Published

2006

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

JESD-609 Code

e1

Number of Terminations

25

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

90W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Mounting Type

Chassis Mount

Mount

Chassis Mount

Max Collector Current

50A

Current - Collector Cutoff (Max)

250μA

Configuration

Dual Boost Chopper

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

90W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.9V

JESD-30 Code

R-XUFM-X25

Pin Count

25

Input Capacitance

1.6nF

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

1.6nF @ 25V

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT30H170T3G

In stock

SKU: APTGT30H170T3G-9
Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

32

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

4

Operating Temperature

-40°C~150°C TJ

Terminal Position

UPPER

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

210W

Published

2006

Terminal Form

UNSPECIFIED

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1700V

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Power - Max

210W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

45A

Pin Count

25

JESD-30 Code

R-XUFM-X25

Input Capacitance

2.5nF

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Turn Off Time-Nom (toff)

850 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

2.5nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT30H60T1G

In stock

SKU: APTGT30H60T1G-9
Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

4

Operating Temperature

-40°C~175°C TJ

Terminal Form

THROUGH-HOLE

Published

2012

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

90W

Terminal Position

UPPER

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Input Capacitance

1.6nF

Configuration

Full Bridge Inverter

Power - Max

90W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

50A

Current - Collector Cutoff (Max)

250μA

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

Pin Count

12

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

1.6nF @ 25V

VCEsat-Max

1.9 V

Radiation Hardening

No

Case Connection

ISOLATED

RoHS Status

RoHS Compliant