Showing 1525–1536 of 2118 results
Transistors - IGBTs - Modules
Microsemi Corporation APTGT30H60T3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Package / Case |
SP3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~175°C TJ |
Published |
2006 |
JESD-609 Code |
e1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Part Status |
Obsolete |
Number of Terminations |
25 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
90W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Mounting Type |
Chassis Mount |
Mount |
Chassis Mount |
Max Collector Current |
50A |
JESD-30 Code |
R-XUFM-X25 |
Configuration |
Full Bridge Inverter |
Case Connection |
ISOLATED |
Power - Max |
90W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.9V |
Current - Collector Cutoff (Max) |
250μA |
Input Capacitance |
1.6nF |
Pin Count |
25 |
Turn On Time |
170 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
Turn Off Time-Nom (toff) |
310 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
1.6nF @ 25V |
Qualification Status |
Not Qualified |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT30SK170T1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
JESD-609 Code |
e1 |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP1 |
Number of Pins |
1 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Operating Temperature |
-40°C~150°C TJ |
Terminal Form |
THROUGH-HOLE |
Factory Lead Time |
22 Weeks |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
12 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Max Power Dissipation |
210W |
Terminal Position |
UPPER |
Published |
2012 |
Pin Count |
12 |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Input Capacitance |
2.5nF |
Power - Max |
210W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
45A |
Current - Collector Cutoff (Max) |
250μA |
Configuration |
Single |
Case Connection |
ISOLATED |
Turn On Time |
170 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 30A |
Turn Off Time-Nom (toff) |
850 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
2.5nF @ 25V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT30TL601G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Published |
2012 |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP1 |
Number of Pins |
12 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
4 |
Pin Count |
12 |
Factory Lead Time |
36 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
10 |
ECCN Code |
EAR99 |
Max Power Dissipation |
90W |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Operating Temperature |
-40°C~175°C TJ |
JESD-30 Code |
R-XUFM-X10 |
Input Capacitance |
1.6nF |
Turn On Time |
170 ns |
Power - Max |
90W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
50A |
Current - Collector Cutoff (Max) |
250μA |
Configuration |
Three Level Inverter |
Case Connection |
ISOLATED |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
Turn Off Time-Nom (toff) |
310 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
1.6nF @ 25V |
VCEsat-Max |
1.9 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT35A120D1G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
D1 |
Supplier Device Package |
D1 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Current-Collector (Ic) (Max) |
55A |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
205W |
Configuration |
Half Bridge |
Power - Max |
205W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
55A |
Current - Collector Cutoff (Max) |
5mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
2.5nF |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 35A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
2.5nF @ 25V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT35H120T3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
yes |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
4 |
Operating Temperature |
-40°C~150°C TJ |
Terminal Form |
UNSPECIFIED |
JESD-609 Code |
e1 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
25 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
208W |
Terminal Position |
UPPER |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Current - Collector Cutoff (Max) |
250μA |
JESD-30 Code |
R-XUFM-X25 |
Case Connection |
ISOLATED |
Power - Max |
208W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
55A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
2.5nF |
Pin Count |
25 |
Turn On Time |
140 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 35A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
2.5nF @ 25V |
Radiation Hardening |
No |
Configuration |
Full Bridge Inverter |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT400A120D3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Configuration |
Half Bridge |
Mounting Type |
Chassis Mount |
Package / Case |
D-3 Module |
Number of Pins |
11 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-40°C~150°C TJ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Published |
2012 |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Max Power Dissipation |
2.1kW |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Pin Count |
11 |
JESD-30 Code |
R-XUFM-X7 |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Input Capacitance |
29nF |
Turn On Time |
400 ns |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
580A |
Current - Collector Cutoff (Max) |
750μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Case Connection |
ISOLATED |
Element Configuration |
Dual |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 400A |
Turn Off Time-Nom (toff) |
830 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
29nF @ 25V |
VCEsat-Max |
2.1 V |
Power - Max |
2100W |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT400A120G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
JESD-609 Code |
e1 |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
7 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
2 |
Operating Temperature |
-40°C~150°C TJ |
Terminal Position |
UPPER |
Published |
2012 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
1.785kW |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Max Collector Current |
560A |
Pin Count |
7 |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Power - Max |
1785W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Current - Collector Cutoff (Max) |
750μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Terminal Form |
UNSPECIFIED |
Input Capacitance |
28nF |
Turn On Time |
340 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 400A |
Turn Off Time-Nom (toff) |
620 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
28nF @ 25V |
Configuration |
Half Bridge |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT400DA120D3G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
D-3 Module |
Number of Pins |
11 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-40°C~150°C TJ |
Published |
2008 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
Max Power Dissipation |
2.1kW |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Pin Count |
7 |
JESD-30 Code |
R-XUFM-X7 |
Configuration |
Single |
Power - Max |
2100W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
580A |
Current - Collector Cutoff (Max) |
750μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
29nF |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 400A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
29nF @ 25V |
VCEsat-Max |
2.1 V |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT400DU120G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Terminal Form |
UNSPECIFIED |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
7 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-40°C~150°C TJ |
Pbfree Code |
yes |
Part Status |
Active |
JESD-609 Code |
e1 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
1.785kW |
Terminal Position |
UPPER |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
36 Weeks |
Current - Collector Cutoff (Max) |
750μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Case Connection |
ISOLATED |
Power - Max |
1785W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
560A |
Configuration |
Dual, Common Source |
Pin Count |
7 |
Input Capacitance |
28nF |
Turn On Time |
340 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 400A |
Turn Off Time-Nom (toff) |
610 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
28nF @ 25V |
Element Configuration |
Dual |
RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT450A60G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Packaging |
Bulk |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
7 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
2 |
Turn Off Delay Time |
250 ns |
Max Power Dissipation |
1.75kW |
Factory Lead Time |
36 Weeks |
Published |
2006 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
7 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
AVALANCHE RATED |
Operating Temperature |
-40°C~175°C TJ |
Terminal Position |
UPPER |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
550A |
Configuration |
Half Bridge |
Element Configuration |
Dual |
Case Connection |
ISOLATED |
Turn On Delay Time |
130 ns |
Power - Max |
1750W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Terminal Form |
UNSPECIFIED |
Pin Count |
7 |
Current - Collector Cutoff (Max) |
500μA |
Input Capacitance |
37nF |
Turn On Time |
205 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 450A |
Turn Off Time-Nom (toff) |
400 ns |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
37nF @ 25V |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Microsemi Corporation APTGT450DU60G
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
SP6 |
Number of Pins |
6 |
Supplier Device Package |
SP6 |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
550A |
Operating Temperature |
-40°C~175°C TJ |
Published |
2006 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-40°C |
Max Power Dissipation |
1.75kW |
Configuration |
Dual, Common Source |
Element Configuration |
Dual |
Power - Max |
1750W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
550A |
Current - Collector Cutoff (Max) |
500μA |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Input Capacitance |
37nF |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 450A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
37nF @ 25V |
RoHS Status |
RoHS Compliant |