Showing 1549–1560 of 2118 results

Transistors - IGBTs - Modules

Microsemi Corporation APTGT50DH170TG

In stock

SKU: APTGT50DH170TG-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Terminal Form

UNSPECIFIED

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

14

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

312W

Terminal Position

UPPER

JESD-609 Code

e1

Pin Count

14

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1700V

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

312W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

75A

JESD-30 Code

R-XUFM-X14

Configuration

Asymmetrical Bridge

Input Capacitance

4.4nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 50A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

4.4nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50DH60T1G

In stock

SKU: APTGT50DH60T1G-9
Manufacturer

Microsemi Corporation

Published

2012

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

10

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

2

JESD-30 Code

R-XUFM-X9

Factory Lead Time

36 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

9

ECCN Code

EAR99

Max Power Dissipation

176W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Pin Count

12

Operating Temperature

-40°C~175°C TJ

Configuration

Asymmetrical Bridge

Input Capacitance

3.15nF

Turn On Time

170 ns

Power - Max

176W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Current - Collector Cutoff (Max)

250μA

Element Configuration

Dual

Case Connection

ISOLATED

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

3.15nF @ 25V

VCEsat-Max

1.9 V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50DSK60T3G

In stock

SKU: APTGT50DSK60T3G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

32

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Operating Temperature

-40°C~175°C TJ

Packaging

Bulk

Terminal Form

UNSPECIFIED

Mount

Chassis Mount, Screw

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

176W

Terminal Position

UPPER

JESD-609 Code

e1

Pin Count

25

Max Collector Current

80A

Current - Collector Cutoff (Max)

250μA

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

176W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

JESD-30 Code

R-XUFM-X25

Configuration

Dual Buck Chopper

Input Capacitance

3.15nF

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

3.15nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50DU120TG

In stock

SKU: APTGT50DU120TG-9
Manufacturer

Microsemi Corporation

Terminal Form

UNSPECIFIED

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

JESD-609 Code

e1

Pbfree Code

yes

Published

2006

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

277W

Terminal Position

UPPER

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

277W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

75A

JESD-30 Code

R-XUFM-X12

Pin Count

12

Input Capacitance

3.6nF

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

3.6nF @ 25V

Radiation Hardening

No

Configuration

Dual, Common Source

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50DU170TG

In stock

SKU: APTGT50DU170TG-9
Manufacturer

Microsemi Corporation

Part Status

Obsolete

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Published

2006

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Chassis Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

312W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

JESD-609 Code

e1

Pin Count

12

Max Collector Current

75A

Current - Collector Cutoff (Max)

250μA

Configuration

Dual, Common Source

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

312W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.4V

JESD-30 Code

R-XUFM-X12

Qualification Status

Not Qualified

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

4.4nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 50A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

4.4nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50H120T3G

In stock

SKU: APTGT50H120T3G-9
Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

4

Operating Temperature

-40°C~150°C TJ

Terminal Position

UPPER

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

270W

Published

2006

Terminal Form

UNSPECIFIED

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Power - Max

270W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

75A

Pin Count

25

JESD-30 Code

R-XUFM-X25

Input Capacitance

3.6nF

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

3.6nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50H60T2G

In stock

SKU: APTGT50H60T2G-9
Manufacturer

Microsemi Corporation

Max Power Dissipation

176W

Mounting Type

Chassis Mount

Package / Case

SP2

Number of Pins

22

Collector-Emitter Breakdown Voltage

600V

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Operating Temperature

175°C

Min Operating Temperature

-40°C

Mount

Chassis Mount, Screw

Input

Standard

Configuration

Full Bridge Inverter

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Current - Collector Cutoff (Max)

250μA

Input Capacitance

3.15nF

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

3.15nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50H60T3G

In stock

SKU: APTGT50H60T3G-9
Manufacturer

Microsemi Corporation

Published

2006

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

32

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

4

Operating Temperature

-40°C~175°C TJ

Max Power Dissipation

176W

Factory Lead Time

36 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Packaging

Bulk

Terminal Position

UPPER

Max Collector Current

80A

Current - Collector Cutoff (Max)

250μA

JESD-30 Code

R-XUFM-X25

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Power - Max

176W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Terminal Form

UNSPECIFIED

Pin Count

25

Input Capacitance

3.15nF

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

3.15nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50SK120D1G

In stock

SKU: APTGT50SK120D1G-9
Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

D1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature (Max.)

150°C

Pin Count

7

Mount

Chassis Mount

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

270W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

JESD-609 Code

e1

JESD-30 Code

R-XUFM-X7

Current - Collector Cutoff (Max)

5mA

Voltage - Collector Emitter Breakdown (Max)

1200V

Power - Max

270W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

75A

Configuration

Single

Case Connection

ISOLATED

Input Capacitance

3.6nF

Turn On Time

280 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

830 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

3.6nF @ 25V

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50SK120TG

In stock

SKU: APTGT50SK120TG-9
Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

-40°C~150°C TJ

Terminal Form

UNSPECIFIED

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

277W

Terminal Position

UPPER

Published

2005

Pin Count

12

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Case Connection

ISOLATED

Power - Max

277W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

75A

JESD-30 Code

R-XUFM-X12

Configuration

Single

Input Capacitance

3.6nF

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

3.6nF @ 25V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50TA170PG

In stock

SKU: APTGT50TA170PG-9
Manufacturer

Microsemi Corporation

Part Status

Obsolete

Package / Case

SP6

Number of Pins

6

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Operating Temperature

-40°C~150°C TJ

Published

2006

Pin Count

21

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

21

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

AVALANCHE RATED

Max Power Dissipation

310W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Mounting Type

Chassis Mount

Mount

Chassis Mount

Current - Collector Cutoff (Max)

250μA

Configuration

Three Phase

Power - Max

310W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

70A

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

4.4nF

JESD-30 Code

R-XUFM-X21

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 50A

Turn Off Time-Nom (toff)

1050 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

4.4nF @ 25V

Case Connection

ISOLATED

RoHS Status

RoHS Compliant

Microsemi Corporation APTGT50TA60PG

In stock

SKU: APTGT50TA60PG-9
Manufacturer

Microsemi Corporation

Published

2006

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP6

Number of Pins

6

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

6

Max Power Dissipation

176W

Factory Lead Time

36 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

21

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Operating Temperature

-40°C~175°C TJ

Terminal Position

UPPER

Collector Emitter Voltage (VCEO)

1.9V

Max Collector Current

80A

JESD-30 Code

R-XUFM-X21

Configuration

Three Phase

Case Connection

ISOLATED

Power - Max

176W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Terminal Form

UNSPECIFIED

Pin Count

21

Current - Collector Cutoff (Max)

250μA

Input Capacitance

3.15nF

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

3.15nF @ 25V

RoHS Status

RoHS Compliant