Showing 1561–1572 of 2118 results
Microsemi Corporation APTGT50TL601G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
2012 |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP1 |
| Number of Pins |
12 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
4 |
| Pin Count |
12 |
| Factory Lead Time |
36 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
10 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
176W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Operating Temperature |
-40°C~175°C TJ |
| JESD-30 Code |
R-XUFM-X10 |
| Input Capacitance |
3.15nF |
| Turn On Time |
170 ns |
| Power - Max |
176W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
80A |
| Current - Collector Cutoff (Max) |
250μA |
| Configuration |
Three Level Inverter |
| Case Connection |
ISOLATED |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
3.15nF @ 25V |
| VCEsat-Max |
1.9 V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT50TL60T3G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-30 Code |
R-XUFM-X16 |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP3 |
| Number of Pins |
32 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
4 |
| Published |
2012 |
| Part Status |
Active |
| Operating Temperature |
-40°C~175°C TJ |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
16 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
176W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Pin Count |
25 |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
36 Weeks |
| Turn On Time |
170 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
80A |
| Current - Collector Cutoff (Max) |
250μA |
| Input Capacitance |
3.15nF |
| Case Connection |
ISOLATED |
| Configuration |
Three Level Inverter |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
3.15nF @ 25V |
| VCEsat-Max |
1.9 V |
| Radiation Hardening |
No |
| Power - Max |
176W |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT50X60T3G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP3 |
| Number of Pins |
32 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
6 |
| Turn Off Delay Time |
200 ns |
| Operating Temperature |
-40°C~175°C TJ |
| JESD-30 Code |
R-XUFM-X25 |
| Factory Lead Time |
36 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
25 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Max Power Dissipation |
176W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Pin Count |
25 |
| Published |
2007 |
| Configuration |
Three Phase Inverter |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
310 ns |
| Power - Max |
176W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
80A |
| Current - Collector Cutoff (Max) |
250μA |
| Input Capacitance |
3.15nF |
| Turn On Time |
170 ns |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
110 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
3.15nF @ 25V |
| VCEsat-Max |
1.9 V |
| Height |
11.5mm |
| Length |
73.4mm |
| Width |
40.8mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APTGT580U60D4G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Mount |
Chassis Mount |
| Mounting Type |
Chassis Mount |
| Package / Case |
D4 |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2008 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Max Power Dissipation |
1.6kW |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Pin Count |
5 |
| JESD-30 Code |
R-XUFM-X5 |
| Configuration |
Single |
| Power - Max |
1600W |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.9V |
| Max Collector Current |
760A |
| Current - Collector Cutoff (Max) |
1mA |
| Input Capacitance |
37nF |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 600A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
37nF @ 25V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT600A60G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Terminal Position |
UPPER |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP6 |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
2 |
| Turn Off Delay Time |
250 ns |
| Published |
2007 |
| JESD-609 Code |
e1 |
| Operating Temperature |
-40°C~175°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
7 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
2.3kW |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
36 Weeks |
| Max Collector Current |
700A |
| Current - Collector Cutoff (Max) |
750μA |
| Element Configuration |
Dual |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
130 ns |
| Power - Max |
2300W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Pin Count |
7 |
| Terminal Form |
UNSPECIFIED |
| Input Capacitance |
49nF |
| Turn On Time |
205 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 600A |
| Turn Off Time-Nom (toff) |
400 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
49nF @ 25V |
| RoHS Status |
RoHS Compliant |
| Configuration |
Half Bridge |
| Lead Free |
Lead Free |
Microsemi Corporation APTGT600DA60G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP6 |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Operating Temperature |
-40°C~175°C TJ |
| Max Power Dissipation |
2.3kW |
| Factory Lead Time |
36 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Published |
2006 |
| Terminal Position |
UPPER |
| Max Collector Current |
700A |
| Current - Collector Cutoff (Max) |
750μA |
| Configuration |
Single |
| Case Connection |
ISOLATED |
| Power - Max |
2300W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Terminal Form |
UNSPECIFIED |
| Pin Count |
5 |
| Input Capacitance |
49nF |
| Turn On Time |
205 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 600A |
| Turn Off Time-Nom (toff) |
400 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
49nF @ 25V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT600SK60G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP6 |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Turn Off Delay Time |
250 ns |
| Operating Temperature |
-40°C~175°C TJ |
| Terminal Position |
UPPER |
| Published |
2006 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
2.3kW |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
36 Weeks |
| Max Collector Current |
700A |
| Pin Count |
5 |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
130 ns |
| Power - Max |
2300W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Current - Collector Cutoff (Max) |
750μA |
| Input Capacitance |
49nF |
| Terminal Form |
UNSPECIFIED |
| Turn On Time |
205 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 600A |
| Turn Off Time-Nom (toff) |
400 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
49nF @ 25V |
| RoHS Status |
RoHS Compliant |
| Configuration |
Single |
| Lead Free |
Lead Free |
Microsemi Corporation APTGT600U120D4G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Terminal Position |
UPPER |
| Mounting Type |
Chassis Mount |
| Package / Case |
D4 |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Published |
2011 |
| JESD-609 Code |
e1 |
| Operating Temperature |
-40°C~150°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Max Power Dissipation |
2.5kW |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
36 Weeks |
| Current - Collector Cutoff (Max) |
5mA |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Case Connection |
ISOLATED |
| Power - Max |
2500W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
900A |
| Pin Count |
4 |
| Terminal Form |
UNSPECIFIED |
| Input Capacitance |
40nF |
| Turn On Time |
400 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 600A |
| Turn Off Time-Nom (toff) |
830 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
40nF @ 25V |
| Configuration |
Single |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT750U60D4G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
2012 |
| Mounting Type |
Chassis Mount |
| Package / Case |
D4 |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
1000A |
| Pin Count |
5 |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
2.3kW |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
36 Weeks |
| Input Capacitance |
49nF |
| Case Connection |
ISOLATED |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
1kA |
| Current - Collector Cutoff (Max) |
1mA |
| Turn On Time |
350 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 800A |
| Configuration |
Single |
| Turn Off Time-Nom (toff) |
730 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
49nF @ 25V |
| VCEsat-Max |
1.9 V |
| Power - Max |
2300W |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75A120D1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-30 Code |
R-XUFM-X7 |
| Package / Case |
D1 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Operating Temperature (Max.) |
150°C |
| JESD-609 Code |
e1 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
yes |
| Number of Terminations |
7 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation |
357W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Pin Count |
7 |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
5.345μF |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
110A |
| Current - Collector Cutoff (Max) |
4mA |
| Case Connection |
ISOLATED |
| Configuration |
Half Bridge |
| Turn On Time |
390 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
830 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
5345nF @ 25V |
| Power - Max |
357W |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75A120T1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP1 |
| Number of Pins |
1 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
2 |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
36 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
12 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Max Power Dissipation |
357W |
| Terminal Position |
UPPER |
| Terminal Form |
THROUGH-HOLE |
| Published |
2012 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Max Collector Current |
110A |
| Current - Collector Cutoff (Max) |
250μA |
| Configuration |
Half Bridge |
| Element Configuration |
Dual |
| Case Connection |
ISOLATED |
| Power - Max |
357W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Pin Count |
12 |
| Qualification Status |
Not Qualified |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
5.34nF |
| Turn On Time |
335 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
610 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
5.34nF @ 25V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75A120TG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP4 |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2006 |
| JESD-609 Code |
e1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Chassis Mount |
| Number of Terminations |
12 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
350W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Part Status |
Obsolete |
| Pin Count |
12 |
| Max Collector Current |
100A |
| Current - Collector Cutoff (Max) |
250μA |
| Configuration |
Half Bridge |
| Element Configuration |
Dual |
| Case Connection |
ISOLATED |
| Power - Max |
350W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
2.1V |
| JESD-30 Code |
R-XUFM-X12 |
| Qualification Status |
Not Qualified |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
5.34nF |
| Turn On Time |
335 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
610 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Input Capacitance (Cies) @ Vce |
5.34nF @ 25V |
| RoHS Status |
RoHS Compliant |