Showing 1573–1584 of 2118 results
Microsemi Corporation APTGT75A170D1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Terminal Position |
UPPER |
| Package / Case |
D1 |
| Number of Pins |
7 |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
2 |
| Packaging |
Bulk |
| Published |
2015 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| JESD-609 Code |
e1 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
7 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Max Power Dissipation |
520W |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount, Screw |
| Current - Collector Cutoff (Max) |
5mA |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Element Configuration |
Dual |
| Case Connection |
ISOLATED |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
120A |
| Pin Count |
7 |
| Terminal Form |
UNSPECIFIED |
| Input Capacitance |
6.5nF |
| Turn On Time |
400 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
1200 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
6.5nF @ 25V |
| Configuration |
Half Bridge |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75A60T1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pbfree Code |
yes |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP1 |
| Number of Pins |
12 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
2 |
| Turn Off Delay Time |
200 ns |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2007 |
| Pin Count |
12 |
| Factory Lead Time |
36 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
12 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Max Power Dissipation |
250W |
| Terminal Position |
UPPER |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-609 Code |
e1 |
| Qualification Status |
Not Qualified |
| Turn On Time |
170 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 75A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
110 ns |
| Power - Max |
250W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
100A |
| Current - Collector Cutoff (Max) |
250μA |
| Input Capacitance |
4.62nF |
| Configuration |
Half Bridge |
| Element Configuration |
Dual |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
4.62nF @ 25V |
| VCEsat-Max |
1.9 V |
| Height |
11.5mm |
| Length |
51.6mm |
| Width |
40.8mm |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APTGT75DA120D1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pbfree Code |
yes |
| Package / Case |
D1 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2004 |
| Pin Count |
7 |
| JESD-609 Code |
e1 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
7 |
| Terminal Finish |
TIN SILVER COPPER |
| Max Power Dissipation |
357W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount |
| Current - Collector Cutoff (Max) |
4mA |
| Configuration |
Single |
| Power - Max |
357W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
110A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
5.345μF |
| JESD-30 Code |
R-XUFM-X7 |
| Turn On Time |
390 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
830 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
5345nF @ 25V |
| Case Connection |
ISOLATED |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75DA120TG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP4 |
| Number of Pins |
20 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Terminal Form |
UNSPECIFIED |
| Factory Lead Time |
36 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
12 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
357W |
| Terminal Position |
UPPER |
| Published |
2006 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
110A |
| JESD-30 Code |
R-XUFM-X12 |
| Qualification Status |
Not Qualified |
| Configuration |
Single |
| Case Connection |
ISOLATED |
| Power - Max |
357W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
12 |
| Current - Collector Cutoff (Max) |
250μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
5.34nF |
| Turn On Time |
335 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
610 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Input Capacitance (Cies) @ Vce |
5.34nF @ 25V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75DA170T1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pbfree Code |
yes |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP1 |
| Number of Pins |
1 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2007 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
22 Weeks |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
12 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Max Power Dissipation |
465W |
| Terminal Position |
UPPER |
| Terminal Form |
THROUGH-HOLE |
| JESD-609 Code |
e1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Current - Collector Cutoff (Max) |
250μA |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Configuration |
Single |
| Case Connection |
ISOLATED |
| Power - Max |
465W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
130A |
| Pin Count |
12 |
| Qualification Status |
Not Qualified |
| Input Capacitance |
6.8nF |
| Turn On Time |
450 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
1100 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
6.8nF @ 25V |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75DDA60T3G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
2 |
| Operating Temperature |
-40°C~175°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| JESD-609 Code |
e1 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
25 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
250W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
36 Weeks |
| Collector Emitter Voltage (VCEO) |
1.9V |
| Max Collector Current |
100A |
| Qualification Status |
Not Qualified |
| Configuration |
Dual Boost Chopper |
| Element Configuration |
Dual |
| Case Connection |
ISOLATED |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Pin Count |
25 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Current - Collector Cutoff (Max) |
250μA |
| Input Capacitance |
4.62nF |
| Turn On Time |
170 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Input Capacitance (Cies) @ Vce |
4.62nF @ 25V |
| JESD-30 Code |
R-XUFM-X25 |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75DH120TG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP4 |
| Number of Pins |
20 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
2 |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2006 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-609 Code |
e1 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
14 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
357W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
22 Weeks |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Pin Count |
14 |
| Qualification Status |
Not Qualified |
| Configuration |
Asymmetrical Bridge |
| Element Configuration |
Dual |
| Case Connection |
ISOLATED |
| Power - Max |
357W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Max Collector Current |
110A |
| Current - Collector Cutoff (Max) |
250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
5.34nF |
| Turn On Time |
335 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
610 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Input Capacitance (Cies) @ Vce |
5.34nF @ 25V |
| JESD-30 Code |
R-XUFM-X14 |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75DH60T1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Package / Case |
SP1 |
| Number of Pins |
12 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
2 |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2013 |
| JESD-30 Code |
R-XUFM-X9 |
| Part Status |
Obsolete |
| Number of Terminations |
9 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
250W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
12 |
| Mounting Type |
Chassis Mount |
| Factory Lead Time |
22 Weeks |
| Current - Collector Cutoff (Max) |
250μA |
| Configuration |
Asymmetrical Bridge |
| Case Connection |
ISOLATED |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
100A |
| Input Capacitance |
4.62nF |
| Turn On Time |
170 ns |
| Qualification Status |
Not Qualified |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
4.62nF @ 25V |
| VCEsat-Max |
1.9 V |
| Element Configuration |
Dual |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75DH60TG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pbfree Code |
yes |
| Package / Case |
SP4 |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
2 |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2006 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-609 Code |
e1 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
14 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
250W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount |
| Max Collector Current |
100A |
| Pin Count |
14 |
| Configuration |
Asymmetrical Bridge |
| Case Connection |
ISOLATED |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.9V |
| Current - Collector Cutoff (Max) |
250μA |
| Input Capacitance |
4.62nF |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn On Time |
170 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
4.62nF @ 25V |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75DU120TG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP4 |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
2 |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2006 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
12 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Max Power Dissipation |
350W |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
36 Weeks |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Pin Count |
12 |
| Qualification Status |
Not Qualified |
| Configuration |
Dual, Common Source |
| Element Configuration |
Dual |
| Case Connection |
ISOLATED |
| Power - Max |
350W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Max Collector Current |
100A |
| Current - Collector Cutoff (Max) |
250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
5.34nF |
| Turn On Time |
335 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
610 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Input Capacitance (Cies) @ Vce |
5.34nF @ 25V |
| JESD-30 Code |
R-XUFM-X12 |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75H60T1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP1 |
| Number of Pins |
12 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
4 |
| Operating Temperature |
-40°C~175°C TJ |
| Terminal Form |
THROUGH-HOLE |
| Published |
2007 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
12 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Max Power Dissipation |
250W |
| Terminal Position |
UPPER |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
36 Weeks |
| Input Capacitance |
4.62nF |
| Configuration |
Full Bridge Inverter |
| Power - Max |
250W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
100A |
| Current - Collector Cutoff (Max) |
250μA |
| Turn On Time |
170 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 75A |
| Pin Count |
12 |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Gate-Emitter Voltage-Max |
20V |
| Input Capacitance (Cies) @ Vce |
4.62nF @ 25V |
| VCEsat-Max |
1.9 V |
| Radiation Hardening |
No |
| Case Connection |
ISOLATED |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APTGT75H60T2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Factory Lead Time |
22 Weeks |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SP2 |
| Number of Pins |
22 |
| Supplier Device Package |
SP2 |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
100A |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2012 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-40°C |
| Max Power Dissipation |
250W |
| Configuration |
Full Bridge Inverter |
| Power - Max |
250W |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
100A |
| Current - Collector Cutoff (Max) |
250μA |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Input Capacitance |
4.62nF |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Input Capacitance (Cies) @ Vce |
4.62nF @ 25V |
| RoHS Status |
RoHS Compliant |