Showing 1765–1776 of 2118 results
Transistors - IGBTs - Modules
onsemi NXH450B100H4Q2F2SG
In stock
Manufacturer |
onsemi |
---|---|
Configuration |
2 Independent |
Package / Case |
Module |
Supplier Device Package |
56-PIM (93×47) |
Brand |
onsemi |
Maximum Operating Temperature |
+ 150 C |
Mfr |
onsemi |
Minimum Operating Temperature |
– 40 C |
Package |
Tray |
Product Status |
Active |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Subcategory |
IGBTs |
Mounting Type |
Chassis Mount |
Power - Max |
234 W |
Power Dissipation |
234W |
Input |
Standard |
Product Type |
IGBT Modules |
Current - Collector Cutoff (Max) |
600 μA |
Voltage - Collector Emitter Breakdown (Max) |
1000 V |
Current - Collector (Ic) (Max) |
101 A |
Collector Emitter Saturation Voltage |
1.7V |
Vce(on) (Max) @ Vge, Ic |
2.25V @ 15V, 150A |
Continuous Collector Current |
101A |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
9.342 nF @ 20 V |
Product Category |
IGBT Modules |
onsemi NXH50M65L4C2SG
In stock
Manufacturer |
onsemi |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
27-DIP |
Brand |
onsemi |
Maximum Operating Temperature |
+ 150 C |
Mfr |
onsemi |
Minimum Operating Temperature |
– 40 C |
Package |
Tube |
Package Type |
DIP |
Product Status |
Active |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Packaging |
Tube |
Subcategory |
IGBTs |
Pin Count |
27 |
Configuration |
Three Phase Inverter |
Power - Max |
20 mW |
Input |
Single Phase Bridge Rectifier |
Product Type |
IGBT Modules |
Current - Collector Cutoff (Max) |
250 μA |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Current - Collector (Ic) (Max) |
50 A |
Collector Emitter Saturation Voltage |
1.6V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 75A |
Continuous Collector Current |
50A |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
4.877 nF @ 20 V |
Product Category |
IGBT Modules |
onsemi NXH50M65L4Q1PTG
In stock
Manufacturer |
onsemi |
---|---|
Configuration |
Full Bridge |
Package / Case |
Module |
Supplier Device Package |
53-PIM/Q2PACK (93×47) |
Mfr |
onsemi |
Package |
Tray |
Product Status |
Active |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Chassis Mount |
Input |
Standard |
Power - Max |
86 W |
Current - Collector Cutoff (Max) |
300 μA |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Current - Collector (Ic) (Max) |
48 A |
Vce(on) (Max) @ Vge, Ic |
2.22V @ 15V, 50A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
3.137 nF @ 20 V |
Power Integrations CM1200DC-34N
In stock
Manufacturer |
Mitsubishi Electric |
---|---|
Package Description |
FLANGE MOUNT, R-XUFM-X10 |
Surface Mount |
NO |
Supplier Device Package |
8-SOIC |
Number of Terminals |
10 |
Transistor Element Material |
SILICON |
Base Product Number |
S25FL164 |
Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP |
Manufacturer Part Number |
CM1200DC-34N |
Mfr |
Infineon Technologies |
Operating Temperature-Max |
150 °C |
Additional Feature |
HIGH RELIABILITY |
Package Body Material |
UNSPECIFIED |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Part Life Cycle Code |
Active |
Part Package Code |
MODULE |
Product Status |
Obsolete |
Risk Rank |
5.27 |
Turn-off Time-Nom (toff) |
1500 ns |
Turn-on Time-Nom (ton) |
1400 ns |
Operating Temperature |
-40°C ~ 105°C (TA) |
Series |
FL1-K |
Package / Case |
8-SOIC (0.209, 5.30mm Width) |
Mounting Type |
Surface Mount |
Case Connection |
ISOLATED |
Technology |
FLASH – NOR |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Reach Compliance Code |
unknown |
Pin Count |
10 |
JESD-30 Code |
R-XUFM-X10 |
Qualification Status |
Not Qualified |
Number of Elements |
2 |
Memory Size |
64Mbit |
Memory Type |
Non-Volatile |
Clock Frequency |
108 MHz |
Memory Format |
FLASH |
Subcategory |
Insulated Gate BIP Transistors |
Memory Interface |
SPI – Quad I/O |
Transistor Application |
POWER CONTROL |
Write Cycle Time - Word, Page |
3ms |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation-Max (Abs) |
6500 W |
Collector Current-Max (IC) |
1200 A |
Collector-Emitter Voltage-Max |
1700 V |
Gate-Emitter Voltage-Max |
20 V |
VCEsat-Max |
2.8 V |
Voltage - Supply |
2.7V ~ 3.6V |
Memory Organization |
8M x 8 |
Power Integrations CM1500HC-66R
In stock
Manufacturer |
Mitsubishi Electric |
---|---|
Package Description |
FLANGE MOUNT, R-XUFM-X5 |
Number of Terminals |
5 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP |
Manufacturer Part Number |
CM1500HC-66R |
Mounting |
PCB |
Operating Temperature-Max |
150 °C |
Turn-on Time-Nom (ton) |
1250 ns |
Surface Mount |
NO |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Part Life Cycle Code |
Active |
Part Package Code |
MODULE |
Risk Rank |
5.26 |
Turn-off Time-Nom (toff) |
3250 ns |
Package Body Material |
UNSPECIFIED |
Series |
Printed Circuit |
Number of Elements |
3 |
Configuration |
COMPLEX |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Reach Compliance Code |
unknown |
Pin Count |
9 |
JESD-30 Code |
R-XUFM-X5 |
Qualification Status |
Not Qualified |
Subcategory |
Insulated Gate BIP Transistors |
Pitch |
7,5 mm |
Case Connection |
ISOLATED |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation-Max (Abs) |
15600 W |
Collector Current-Max (IC) |
1500 A |
Collector-Emitter Voltage-Max |
3300 V |
Gate-Emitter Voltage-Max |
20 V |
Power Integrations CM2400HC-34N
In stock
Manufacturer |
Mitsubishi Electric |
---|---|
Surface Mount |
NO |
Number of Terminals |
7 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP |
Manufacturer Part Number |
CM2400HC-34N |
Operating Temperature-Max |
150 °C |
Package Body Material |
UNSPECIFIED |
Package Description |
FLANGE MOUNT, R-XUFM-X7 |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Part Life Cycle Code |
Active |
Part Package Code |
MODULE |
Risk Rank |
5.17 |
Turn-off Time-Nom (toff) |
1500 ns |
Turn-on Time-Nom (ton) |
1400 ns |
Subcategory |
Insulated Gate BIP Transistors |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Reach Compliance Code |
unknown |
Pin Count |
7 |
JESD-30 Code |
R-XUFM-X7 |
Qualification Status |
Not Qualified |
Number of Elements |
2 |
Configuration |
COMPLEX |
Case Connection |
ISOLATED |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation-Max (Abs) |
13100 W |
Collector Current-Max (IC) |
2400 A |
Collector-Emitter Voltage-Max |
1700 V |
Gate-Emitter Voltage-Max |
20 V |
VCEsat-Max |
2.8 V |
Power Integrations CM800DZ-34H
In stock
Manufacturer |
Mitsubishi Electric |
---|---|
Package Description |
FLANGE MOUNT, R-XUFM-X10 |
Rohs Code |
No |
Risk Rank |
5.24 |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Part Package Code |
MODULE |
Part Life Cycle Code |
Active |
Package Style |
FLANGE MOUNT |
Pbfree Code |
No |
Package Shape |
RECTANGULAR |
Package Body Material |
UNSPECIFIED |
Operating Temperature-Max |
150 °C |
Manufacturer Part Number |
CM800DZ-34H |
Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP |
Transistor Element Material |
SILICON |
Number of Terminals |
10 |
Surface Mount |
NO |
Terminal Position |
UPPER |
Case Connection |
ISOLATED |
Gate-Emitter Voltage-Max |
20 V |
Collector-Emitter Voltage-Max |
1700 V |
Collector Current-Max (IC) |
800 A |
Power Dissipation-Max (Abs) |
5000 W |
Polarity/Channel Type |
N-CHANNEL |
Transistor Application |
POWER CONTROL |
Number of Elements |
2 |
Subcategory |
Insulated Gate BIP Transistors |
Qualification Status |
Not Qualified |
JESD-30 Code |
R-XUFM-X10 |
Pin Count |
10 |
Reach Compliance Code |
unknown |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Terminal Form |
UNSPECIFIED |
VCEsat-Max |
3.64 V |
Power Integrations FF450R17ME3
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Package Shape |
RECTANGULAR |
Number of Terminals |
11 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Manufacturer Part Number |
FF450R17ME3 |
Operating Temperature-Max |
150 °C |
Package Body Material |
UNSPECIFIED |
Turn-off Time-Nom (toff) |
1300 ns |
Surface Mount |
NO |
Package Style |
FLANGE MOUNT |
Part Life Cycle Code |
Not Recommended |
Part Package Code |
MODULE |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.55 |
Rohs Code |
Yes |
Package Description |
FLANGE MOUNT, R-XUFM-X11 |
Turn-on Time-Nom (ton) |
400 ns |
JESD-30 Code |
R-XUFM-X11 |
Qualification Status |
Not Qualified |
Subcategory |
Insulated Gate BIP Transistors |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
11 |
Pbfree Code |
Yes |
ECCN Code |
EAR99 |
Number of Elements |
1 |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation-Max (Abs) |
2250 W |
Collector Current-Max (IC) |
605 A |
Collector-Emitter Voltage-Max |
1700 V |
Gate-Emitter Voltage-Max |
20 V |
VCEsat-Max |
2.45 V |
Power Integrations FF800R17KP4_B2
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Package Shape |
RECTANGULAR |
Number of Terminals |
10 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Manufacturer Part Number |
FF800R17KP4_B2 |
Moisture Sensitivity Level |
1 |
Operating Temperature-Max |
175 °C |
Package Body Material |
UNSPECIFIED |
Turn-on Time-Nom (ton) |
790 ns |
Surface Mount |
NO |
Package Style |
FLANGE MOUNT |
Part Life Cycle Code |
Active |
Part Package Code |
MODULE |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
1.37 |
Rohs Code |
No |
Turn-off Time-Nom (toff) |
1650 ns |
Package Description |
MODULE-10 |
Pbfree Code |
No |
Number of Elements |
2 |
Configuration |
SEPARATE, 2 ELEMENTS |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Pin Count |
10 |
JESD-30 Code |
R-XUFM-X10 |
Qualification Status |
Not Qualified |
ECCN Code |
EAR99 |
Subcategory |
Insulated Gate BIP Transistors |
Case Connection |
ISOLATED |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation-Max (Abs) |
4850 W |
Collector Current-Max (IC) |
1200 A |
Collector-Emitter Voltage-Max |
1700 V |
Gate-Emitter Voltage-Max |
20 V |
VCEsat-Max |
2.2 V |