Showing 1765–1776 of 2118 results

Transistors - IGBTs - Modules

onsemi NXH450B100H4Q2F2SG

In stock

SKU: NXH450B100H4Q2F2SG-9
Manufacturer

onsemi

Configuration

2 Independent

Package / Case

Module

Supplier Device Package

56-PIM (93×47)

Brand

onsemi

Maximum Operating Temperature

+ 150 C

Mfr

onsemi

Minimum Operating Temperature

– 40 C

Package

Tray

Product Status

Active

Operating Temperature

-40°C ~ 150°C (TJ)

Subcategory

IGBTs

Mounting Type

Chassis Mount

Power - Max

234 W

Power Dissipation

234W

Input

Standard

Product Type

IGBT Modules

Current - Collector Cutoff (Max)

600 μA

Voltage - Collector Emitter Breakdown (Max)

1000 V

Current - Collector (Ic) (Max)

101 A

Collector Emitter Saturation Voltage

1.7V

Vce(on) (Max) @ Vge, Ic

2.25V @ 15V, 150A

Continuous Collector Current

101A

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

9.342 nF @ 20 V

Product Category

IGBT Modules

onsemi NXH50M65L4C2SG

In stock

SKU: NXH50M65L4C2SG-9
Manufacturer

onsemi

Mounting Type

Through Hole

Supplier Device Package

27-DIP

Brand

onsemi

Maximum Operating Temperature

+ 150 C

Mfr

onsemi

Minimum Operating Temperature

– 40 C

Package

Tube

Package Type

DIP

Product Status

Active

Operating Temperature

-40°C ~ 150°C (TJ)

Packaging

Tube

Subcategory

IGBTs

Pin Count

27

Configuration

Three Phase Inverter

Power - Max

20 mW

Input

Single Phase Bridge Rectifier

Product Type

IGBT Modules

Current - Collector Cutoff (Max)

250 μA

Voltage - Collector Emitter Breakdown (Max)

650 V

Current - Collector (Ic) (Max)

50 A

Collector Emitter Saturation Voltage

1.6V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 75A

Continuous Collector Current

50A

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

4.877 nF @ 20 V

Product Category

IGBT Modules

onsemi NXH50M65L4Q1PTG

In stock

SKU: NXH50M65L4Q1PTG-9
Manufacturer

onsemi

Configuration

Full Bridge

Package / Case

Module

Supplier Device Package

53-PIM/Q2PACK (93×47)

Mfr

onsemi

Package

Tray

Product Status

Active

Operating Temperature

175°C (TJ)

Mounting Type

Chassis Mount

Input

Standard

Power - Max

86 W

Current - Collector Cutoff (Max)

300 μA

Voltage - Collector Emitter Breakdown (Max)

650 V

Current - Collector (Ic) (Max)

48 A

Vce(on) (Max) @ Vge, Ic

2.22V @ 15V, 50A

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

3.137 nF @ 20 V

onsemi NXH600A100H4F5SNG

In stock

SKU: NXH600A100H4F5SNG-9
Manufacturer

onsemi

Brand

onsemi

Mfr

onsemi

Package

Tray

Product Status

Active

Series

*

Product Category

onsemi

Other MUBW1512A7

In stock

SKU: MUBW1512A7-9
Manufacturer

CTS

Brand

CTS Electronic Components

Factory Pack Quantity:Factory Pack Quantity

3000

Packaging

Reel

Series

516

Subcategory

Oscillators

Product Type

TCXO

Output Format

Clipped Sine Wave

Product Category

TCXO Oscillators

Other MUBW20-06 A6K

In stock

SKU: MUBW20-06 A6K-9
Manufacturer

Other

Power Integrations CM1200DC-34N

In stock

SKU: CM1200DC-34N-9
Manufacturer

Mitsubishi Electric

Package Description

FLANGE MOUNT, R-XUFM-X10

Surface Mount

NO

Supplier Device Package

8-SOIC

Number of Terminals

10

Transistor Element Material

SILICON

Base Product Number

S25FL164

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Manufacturer Part Number

CM1200DC-34N

Mfr

Infineon Technologies

Operating Temperature-Max

150 °C

Additional Feature

HIGH RELIABILITY

Package Body Material

UNSPECIFIED

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Part Life Cycle Code

Active

Part Package Code

MODULE

Product Status

Obsolete

Risk Rank

5.27

Turn-off Time-Nom (toff)

1500 ns

Turn-on Time-Nom (ton)

1400 ns

Operating Temperature

-40°C ~ 105°C (TA)

Series

FL1-K

Package / Case

8-SOIC (0.209, 5.30mm Width)

Mounting Type

Surface Mount

Case Connection

ISOLATED

Technology

FLASH – NOR

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Reach Compliance Code

unknown

Pin Count

10

JESD-30 Code

R-XUFM-X10

Qualification Status

Not Qualified

Number of Elements

2

Memory Size

64Mbit

Memory Type

Non-Volatile

Clock Frequency

108 MHz

Memory Format

FLASH

Subcategory

Insulated Gate BIP Transistors

Memory Interface

SPI – Quad I/O

Transistor Application

POWER CONTROL

Write Cycle Time - Word, Page

3ms

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

6500 W

Collector Current-Max (IC)

1200 A

Collector-Emitter Voltage-Max

1700 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

2.8 V

Voltage - Supply

2.7V ~ 3.6V

Memory Organization

8M x 8

Power Integrations CM1500HC-66R

In stock

SKU: CM1500HC-66R-9
Manufacturer

Mitsubishi Electric

Package Description

FLANGE MOUNT, R-XUFM-X5

Number of Terminals

5

Transistor Element Material

SILICON

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Manufacturer Part Number

CM1500HC-66R

Mounting

PCB

Operating Temperature-Max

150 °C

Turn-on Time-Nom (ton)

1250 ns

Surface Mount

NO

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Part Life Cycle Code

Active

Part Package Code

MODULE

Risk Rank

5.26

Turn-off Time-Nom (toff)

3250 ns

Package Body Material

UNSPECIFIED

Series

Printed Circuit

Number of Elements

3

Configuration

COMPLEX

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Reach Compliance Code

unknown

Pin Count

9

JESD-30 Code

R-XUFM-X5

Qualification Status

Not Qualified

Subcategory

Insulated Gate BIP Transistors

Pitch

7,5 mm

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

15600 W

Collector Current-Max (IC)

1500 A

Collector-Emitter Voltage-Max

3300 V

Gate-Emitter Voltage-Max

20 V

Power Integrations CM2400HC-34N

In stock

SKU: CM2400HC-34N-9
Manufacturer

Mitsubishi Electric

Surface Mount

NO

Number of Terminals

7

Transistor Element Material

SILICON

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Manufacturer Part Number

CM2400HC-34N

Operating Temperature-Max

150 °C

Package Body Material

UNSPECIFIED

Package Description

FLANGE MOUNT, R-XUFM-X7

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Part Life Cycle Code

Active

Part Package Code

MODULE

Risk Rank

5.17

Turn-off Time-Nom (toff)

1500 ns

Turn-on Time-Nom (ton)

1400 ns

Subcategory

Insulated Gate BIP Transistors

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Reach Compliance Code

unknown

Pin Count

7

JESD-30 Code

R-XUFM-X7

Qualification Status

Not Qualified

Number of Elements

2

Configuration

COMPLEX

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

13100 W

Collector Current-Max (IC)

2400 A

Collector-Emitter Voltage-Max

1700 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

2.8 V

Power Integrations CM800DZ-34H

In stock

SKU: CM800DZ-34H-9
Manufacturer

Mitsubishi Electric

Package Description

FLANGE MOUNT, R-XUFM-X10

Rohs Code

No

Risk Rank

5.24

Reflow Temperature-Max (s)

NOT SPECIFIED

Part Package Code

MODULE

Part Life Cycle Code

Active

Package Style

FLANGE MOUNT

Pbfree Code

No

Package Shape

RECTANGULAR

Package Body Material

UNSPECIFIED

Operating Temperature-Max

150 °C

Manufacturer Part Number

CM800DZ-34H

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Transistor Element Material

SILICON

Number of Terminals

10

Surface Mount

NO

Terminal Position

UPPER

Case Connection

ISOLATED

Gate-Emitter Voltage-Max

20 V

Collector-Emitter Voltage-Max

1700 V

Collector Current-Max (IC)

800 A

Power Dissipation-Max (Abs)

5000 W

Polarity/Channel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Number of Elements

2

Subcategory

Insulated Gate BIP Transistors

Qualification Status

Not Qualified

JESD-30 Code

R-XUFM-X10

Pin Count

10

Reach Compliance Code

unknown

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Terminal Form

UNSPECIFIED

VCEsat-Max

3.64 V

Power Integrations FF450R17ME3

In stock

SKU: FF450R17ME3-9
Manufacturer

Infineon Technologies AG

Package Shape

RECTANGULAR

Number of Terminals

11

Transistor Element Material

SILICON

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Manufacturer Part Number

FF450R17ME3

Operating Temperature-Max

150 °C

Package Body Material

UNSPECIFIED

Turn-off Time-Nom (toff)

1300 ns

Surface Mount

NO

Package Style

FLANGE MOUNT

Part Life Cycle Code

Not Recommended

Part Package Code

MODULE

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

5.55

Rohs Code

Yes

Package Description

FLANGE MOUNT, R-XUFM-X11

Turn-on Time-Nom (ton)

400 ns

JESD-30 Code

R-XUFM-X11

Qualification Status

Not Qualified

Subcategory

Insulated Gate BIP Transistors

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

11

Pbfree Code

Yes

ECCN Code

EAR99

Number of Elements

1

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

2250 W

Collector Current-Max (IC)

605 A

Collector-Emitter Voltage-Max

1700 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

2.45 V

Power Integrations FF800R17KP4_B2

In stock

SKU: FF800R17KP4_B2-9
Manufacturer

Infineon Technologies AG

Package Shape

RECTANGULAR

Number of Terminals

10

Transistor Element Material

SILICON

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Manufacturer Part Number

FF800R17KP4_B2

Moisture Sensitivity Level

1

Operating Temperature-Max

175 °C

Package Body Material

UNSPECIFIED

Turn-on Time-Nom (ton)

790 ns

Surface Mount

NO

Package Style

FLANGE MOUNT

Part Life Cycle Code

Active

Part Package Code

MODULE

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

1.37

Rohs Code

No

Turn-off Time-Nom (toff)

1650 ns

Package Description

MODULE-10

Pbfree Code

No

Number of Elements

2

Configuration

SEPARATE, 2 ELEMENTS

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

10

JESD-30 Code

R-XUFM-X10

Qualification Status

Not Qualified

ECCN Code

EAR99

Subcategory

Insulated Gate BIP Transistors

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

4850 W

Collector Current-Max (IC)

1200 A

Collector-Emitter Voltage-Max

1700 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

2.2 V