Showing 2053–2064 of 2118 results
Transistors - IGBTs - Modules
Vishay Semiconductor Diodes Division VS-ENQ030L120S
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Reach Compliance Code |
unknown |
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
EMIPAK-1B |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
150°C TJ |
Published |
2016 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
216W |
Factory Lead Time |
45 Weeks |
Power - Max |
216W |
Configuration |
Three Level Inverter |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.52V |
Max Collector Current |
61A |
Current - Collector Cutoff (Max) |
230μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
3.34nF |
Vce(on) (Max) @ Vge, Ic |
2.52V @ 15V, 30A |
IGBT Type |
Trench |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
3.34nF @ 30V |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-ETF075Y60U
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Factory Lead Time |
37 Weeks |
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
EMIPAK-2B |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
175°C TJ |
Published |
2016 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
294W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Configuration |
Three Level Inverter |
Power - Max |
294W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.93V |
Max Collector Current |
109A |
Current - Collector Cutoff (Max) |
100μA |
Input Capacitance |
4.44nF |
Vce(on) (Max) @ Vge, Ic |
1.93V @ 15V, 75A |
IGBT Type |
Trench |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
4.44nF @ 30V |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GA100NA60UP
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Terminal Form |
UNSPECIFIED |
Package / Case |
SOT-227-4, miniBLOC |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
100A |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2013 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Additional Feature |
UL RECOGNIZED |
Terminal Position |
UPPER |
Mounting Type |
Chassis Mount |
JESD-30 Code |
R-PUFM-X4 |
Pin Count |
4 |
Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Current - Collector Cutoff (Max) |
250μA |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
137 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
Turn Off Time-Nom (toff) |
550 ns |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
7.4nF @ 30V |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GA100TS60SF
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
INT-A-Pak |
Number of Pins |
7 |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~150°C TJ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
780W |
Configuration |
Half Bridge |
Power - Max |
780W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.28V |
Max Collector Current |
220A |
Current - Collector Cutoff (Max) |
1mA |
Input Capacitance |
16.25nF |
Vce(on) (Max) @ Vge, Ic |
1.28V @ 15V, 100A |
IGBT Type |
PT |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
16.25nF @ 30V |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GA100TS60SFPBF
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
INT-A-Pak |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~150°C TJ |
Published |
2012 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
780W |
Polarity |
NPN |
Configuration |
Half Bridge |
Element Configuration |
Dual |
Power - Max |
780W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
220A |
Current - Collector Cutoff (Max) |
1mA |
Input Capacitance |
16.25nF |
Vce(on) (Max) @ Vge, Ic |
1.28V @ 15V, 100A |
IGBT Type |
PT |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
16.25nF @ 30V |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GA200HS60S1
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
INT-A-Pak |
Number of Pins |
7 |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~150°C TJ |
Published |
2012 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
830W |
Configuration |
Half Bridge |
Power - Max |
830W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.21V |
Max Collector Current |
480A |
Current - Collector Cutoff (Max) |
1mA |
Input Capacitance |
32.5nF |
Vce(on) (Max) @ Vge, Ic |
1.21V @ 15V, 200A |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
32.5nF @ 30V |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GA200HS60S1PBF
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Max Power Dissipation |
830W |
Mounting Type |
Chassis Mount |
Package / Case |
INT-A-Pak |
Number of Pins |
7 |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature |
-40°C~150°C TJ |
Published |
2012 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Mount |
Chassis Mount, Screw |
Element Configuration |
Dual |
Configuration |
Half Bridge |
Power - Max |
830W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
480A |
Current - Collector Cutoff (Max) |
1mA |
Input Capacitance |
32.5nF |
Vce(on) (Max) @ Vge, Ic |
1.21V @ 15V, 200A |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
32.5nF @ 30V |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GA200TH60S
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Factory Lead Time |
14 Weeks |
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
Double INT-A-PAK (3 + 4) |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature |
-40°C~150°C TJ |
Published |
2015 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Nickel (Ni) |
Max Power Dissipation |
1.042kW |
Configuration |
Half Bridge |
Power - Max |
1042W |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.9V |
Max Collector Current |
260A |
Current - Collector Cutoff (Max) |
5μA |
Input Capacitance |
13.1nF |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 200A (Typ) |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
13.1nF @ 25V |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GA250SA60S
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Published |
2015 |
Mounting Type |
Chassis Mount |
Package / Case |
SOT-227-4 |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Max Power Dissipation |
961W |
Operating Temperature |
-40°C~150°C TJ |
Pbfree Code |
yes |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Finish |
Nickel (Ni) |
Additional Feature |
UL RECOGNIZED |
Mount |
Chassis Mount, Screw |
Factory Lead Time |
16 Weeks |
Max Collector Current |
400A |
Terminal Form |
UNSPECIFIED |
Case Connection |
ISOLATED |
Power - Max |
961W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.66V |
Current - Collector Cutoff (Max) |
1mA |
Input Capacitance |
16.25nF |
Terminal Position |
UPPER |
Turn On Time |
325 ns |
Vce(on) (Max) @ Vge, Ic |
1.66V @ 15V, 200A |
Turn Off Time-Nom (toff) |
1050 ns |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
16.25nF @ 30V |
RoHS Status |
ROHS3 Compliant |
Configuration |
Single |
Lead Free |
Lead Free |
Vishay Semiconductor Diodes Division VS-GB05XP120KTPBF
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Operating Temperature |
-40°C~150°C TJ |
Mount |
Chassis Mount, Screw |
Mounting Type |
Chassis Mount |
Package / Case |
12-MTP Module |
Number of Pins |
14 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Max Power Dissipation |
76W |
Factory Lead Time |
6 Weeks |
Packaging |
Bulk |
Published |
2013 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
13 |
ECCN Code |
EAR99 |
Number of Elements |
6 |
Terminal Position |
UPPER |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PUFM-P13 |
Configuration |
Three Phase Inverter |
Case Connection |
ISOLATED |
Power - Max |
76W |
Transistor Application |
POWER CONTROL |
Terminal Form |
PIN/PEG |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
12A |
Current - Collector Cutoff (Max) |
250μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
64 ns |
Turn Off Time-Nom (toff) |
461 ns |
NTC Thermistor |
Yes |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GB100LP120N
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Max Power Dissipation |
658W |
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
INT-A-Pak |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-40°C~150°C TJ |
Published |
2015 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Factory Lead Time |
12 Weeks |
Power - Max |
658W |
Configuration |
Single |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
200A |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
7.43nF |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 100A (Typ) |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
7.43nF @ 25V |
RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division VS-GB100TH120N
In stock
Manufacturer |
Vishay Semiconductor Diodes Division |
---|---|
Max Power Dissipation |
833W |
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
Double INT-A-PAK (3 + 4) |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Published |
2015 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Factory Lead Time |
14 Weeks |
Power - Max |
833W |
Configuration |
Half Bridge |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
2.35V |
Max Collector Current |
200A |
Current - Collector Cutoff (Max) |
5mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
8.58nF |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 100A |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20V |
Input Capacitance (Cies) @ Vce |
8.58nF @ 25V |
RoHS Status |
ROHS3 Compliant |