Showing 1141–1152 of 2118 results
Transistors - IGBTs - Modules
Microchip APT200GN60JDQ4G
In stock
Manufacturer |
Microchip |
---|---|
Mount |
Chassis Mount |
Voltage Rating (DC) |
600 V |
Max Power Dissipation |
682 W |
Current Rating |
283 A |
Element Configuration |
Single |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.85 V |
Max Collector Current |
283 A |
Collector Emitter Breakdown Voltage |
600 V |
Input Capacitance |
14.1 nF |
NTC Thermistor |
No |
Lead Free |
Lead Free |
Microchip APT25GF120JCU2
In stock
Manufacturer |
Microchip |
---|---|
Mount |
Chassis, Screw, Stud |
Number of Pins |
4 |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Max Power Dissipation |
227 W |
Element Configuration |
Single |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
1.2 kV |
Max Collector Current |
45 A |
Collector Emitter Breakdown Voltage |
1.2 kV |
Input Capacitance |
1.65 nF |
NTC Thermistor |
No |
Radiation Hardening |
No |
Microchip APT47GA60JD40
In stock
Manufacturer |
Microchip |
---|---|
Termination Style |
Solder Lug |
Mounting Type |
Panel Mount |
Package / Case |
SOT-227-4, miniBLOC |
Number of Pins |
4 |
Supplier Device Package |
ISOTOP® |
Mounting Style |
Screw Mount |
Base Product Number |
APT47GA60 |
Brand |
Microchip Technology / Atmel |
Collector- Emitter Voltage VCEO Max |
600 V |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Maximum Gate Emitter Voltage |
30 V |
Maximum Operating Temperature |
+ 150 C |
Mfr |
Microchip Technology |
Package |
Tube |
Pd - Power Dissipation |
283 W |
Minimum Operating Temperature |
– 55 C |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Packaging |
Tube |
Series |
44 |
Part Status |
Active |
Number of Positions |
2 |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Subcategory |
IGBTs |
Max Power Dissipation |
283 W |
Technology |
Si |
Current Rating |
1A (AC/DC) |
Contact Finish |
— |
Mount |
Chassis Mount, Screw |
Contact Material |
Silver Alloy |
Index Stops |
Fixed |
Circuit per Deck |
DPDT |
Element Configuration |
Single |
Power - Max |
283 W |
Number of Decks |
3 |
Operating Force |
5.761 ~ 83gfm |
Input |
Standard |
Product Type |
IGBT Modules |
Collector Emitter Voltage (VCEO) |
600 V |
Max Collector Current |
87 A |
Current - Collector Cutoff (Max) |
275 µA |
Contact Timing |
Non-Shorting (BBM) |
Collector Emitter Breakdown Voltage |
600 V |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
87 A |
Panel Cutout Dimensions |
— |
Actuator Type |
Flatted (6.35mm Dia) |
Depth Behind Panel |
43.61mm |
Input Capacitance |
6.32 nF |
Number of Poles per Deck |
2 |
Angle of Throw |
30° |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 47A |
IGBT Type |
PT |
Voltage Rating - DC |
28V |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
6.32 nF @ 25 V |
Features |
— |
Product Category |
IGBT Modules |
Voltage Rating - AC |
115V |
Actuator Length |
11.10mm |
Configuration |
Single |
Radiation Hardening |
No |
Microchip APT50GT120JU3
In stock
Manufacturer |
Microchip |
---|---|
Pd - Power Dissipation |
Obsolete |
Mounting Type |
ISOTOP |
Number of Pins |
SOT-227 |
Brand |
1.2 kV |
Collector-Emitter Breakdown Voltage |
75 A |
Maximum Gate Emitter Voltage |
+ 150 C |
Maximum Operating Temperature |
Microchip Technology |
Mfr |
– 55 C |
Minimum Operating Temperature |
SMD/SMT |
Operating Temperature-Max |
Bulk |
Part Package Code |
347 W |
Mount |
Chassis Mount |
Qualification Status |
Single |
Unit Weight |
-55°C ~ 150°C (TJ) |
Element Configuration |
347 |
Case Connection |
347 W |
Polarity/Channel Type |
Standard |
Operating Temperature Range |
5 mA |
Current - Collector Cutoff (Max) |
1200 V |
Power Dissipation-Max (Abs) |
2.1V @ 15V, 50A |
Collector Current-Max (IC) |
75 |
Continuous Collector Current |
Trench Field Stop |
Collector-Emitter Voltage-Max |
No |
Gate-Emitter Voltage-Max |
3.6 nF @ 25 V |
VCEsat-Max |
IGBT Silicon Modules |
Microchip APT60GT60JRD
In stock
Manufacturer |
Microchip |
---|---|
Package / Case |
SOT-227-4 |
Mounting Style |
Screw Mount |
Brand |
Microchip Technology / Atmel |
Collector- Emitter Voltage VCEO Max |
600 V |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Maximum Gate Emitter Voltage |
20 V |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
378 W |
Unit Weight |
2 oz |
Packaging |
Tube |
Series |
* |
Part Status |
Active |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Product Type |
IGBT Modules |
Product Category |
IGBT Modules |
Microchip APT65GP60J
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Package Description |
ISOTOP-4 |
Mounting Type |
Chassis Mount |
Package / Case |
SOT-227-4, miniBLOC |
Surface Mount |
NO |
Number of Pins |
4 |
Supplier Device Package |
ISOTOP® |
Number of Terminals |
4 |
Transistor Element Material |
SILICON |
Package Shape |
RECTANGULAR |
Ihs Manufacturer |
MICROSEMI CORP |
Manufacturer Package Code |
ISOTOP |
Manufacturer Part Number |
APT65GP60J |
Mfr |
Microchip Technology |
Operating Temperature-Max |
150 °C |
Package |
Tube |
Package Body Material |
PLASTIC/EPOXY |
Min Operating Temperature |
-55 °C |
Mount |
Chassis Mount, Screw |
Turn-off Time-Nom (toff) |
219 ns |
Part Life Cycle Code |
Active |
Part Package Code |
ISOTOP |
Product Status |
Active |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
1.47 |
Rohs Code |
Yes |
Package Style |
FLANGE MOUNT |
Voltage Rating (DC) |
600 V |
Turn-on Time-Nom (ton) |
84 ns |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Series |
POWER MOS 7® |
JESD-609 Code |
e1 |
Pbfree Code |
Yes |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Operating Temperature |
150 °C |
Base Product Number |
APT65GP60 |
Additional Feature |
LOW CONDUCTION LOSS |
Qualification Status |
Not Qualified |
Input |
Standard |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Current Rating |
130 A |
Pin Count |
4 |
JESD-30 Code |
R-PUFM-X4 |
Collector Emitter Voltage (VCEO) |
600 V |
Number of Elements |
1 |
Configuration |
Single |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Power - Max |
431 W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Subcategory |
Insulated Gate BIP Transistors |
Max Power Dissipation |
431 W |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 65A |
Current - Collector Cutoff (Max) |
1 mA |
Collector Emitter Breakdown Voltage |
600 V |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
130 A |
Input Capacitance |
7.4 nF |
Power Dissipation-Max (Abs) |
431 W |
Max Collector Current |
130 A |
IGBT Type |
PT |
Collector Current-Max (IC) |
130 A |
Collector-Emitter Voltage-Max |
600 V |
NTC Thermistor |
No |
Gate-Emitter Voltage-Max |
20 V |
Input Capacitance (Cies) @ Vce |
7.4 nF @ 25 V |
Gate-Emitter Thr Voltage-Max |
6 V |
Radiation Hardening |
No |
Lead Free |
Lead Free |
Microchip APTCV60HM45BT3G
In stock
Manufacturer |
Microchip |
---|---|
Product Status |
Active |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Number of Pins |
3 |
Supplier Device Package |
SP3 |
Base Product Number |
APTCV60 |
Brand |
Microchip Technology |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Maximum Input Voltage |
40 V |
Mfr |
Microchip Technology |
Mounting |
Surface Mount |
Efficiency |
92 % |
Mount |
Chassis Mount |
Switching Regulator |
Yes |
Turn-On Delay Time |
110 ns |
Operating Temperature |
-40 to 125 °C |
Packaging |
Tube |
Type |
Step Down |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-40 °C |
Subcategory |
Discrete Semiconductor Modules |
Max Power Dissipation |
250 W |
Technology |
Si |
Number of Outputs |
1 |
Package |
Bulk |
Output Voltage |
5 V |
Collector Emitter Breakdown Voltage |
600 V |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Configuration |
Boost Chopper, Full Bridge |
Power Dissipation |
250 W |
Output Current |
0.35 A |
Power - Max |
250 W |
Input |
Standard |
Product Type |
Discrete Semiconductor Modules |
Turn-Off Delay Time |
200 ns |
Collector Emitter Voltage (VCEO) |
1.9 V |
Max Collector Current |
50 A |
Current - Collector Cutoff (Max) |
250 µA |
Output Type |
Fixed |
Operating Supply Voltage |
4.5000, 40.0000 V |
Current - Collector (Ic) (Max) |
50 A |
Screening Level |
Extended Industrial |
Collector Emitter Saturation Voltage |
1.5 V |
Input Capacitance |
3.15 nF |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
Max Junction Temperature (Tj) |
150 °C |
Switching Frequency |
1750 kHz |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
3.15 nF @ 25 V |
Product Category |
Discrete Semiconductor Modules |
Height |
12.1 mm |
Microchip APTCV60HM45RCT3G
In stock
Manufacturer |
Microchip |
---|---|
Mount |
Chassis Mount |
Mounting Type |
Chassis Mount |
Package / Case |
SP3 |
Number of Pins |
3 |
Supplier Device Package |
SP3 |
Base Product Number |
APTCV60 |
Brand |
Microchip Technology |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Mfr |
Microchip Technology |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Packaging |
Tube |
Subcategory |
Discrete Semiconductor Modules |
Max Power Dissipation |
250 W |
Technology |
Si |
Configuration |
Full Bridge Inverter |
Power - Max |
250 W |
Input |
Single Phase Bridge Rectifier |
Product Type |
Discrete Semiconductor Modules |
Collector Emitter Voltage (VCEO) |
1.9 V |
Max Collector Current |
50 A |
Current - Collector Cutoff (Max) |
250 µA |
Collector Emitter Breakdown Voltage |
600 V |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
50 A |
Input Capacitance |
3.15 nF |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
3.15 nF @ 25 V |
Product Category |
Discrete Semiconductor Modules |
Microchip APTCV60HM45RT3G
In stock
Manufacturer |
Microchip |
---|---|
Mfr |
Microchip Technology |
Mounting Type |
Surface Mount |
Package / Case |
24-VFQFN Exposed Pad |
Number of Pins |
3 |
Supplier Device Package |
24-QFN (4×4) |
Base Product Number |
APTCV60 |
Brand |
Microchip Technology |
Category |
Power Module |
Max Operating Temperature |
175 °C |
Mount |
Chassis Mount, Screw |
Mounting |
Screw Mount |
Package |
Bulk |
Product Status |
Active |
Supplier Package |
Case SP-3 |
Operating Temperature |
-40 to 175 °C |
Packaging |
Bulk |
Series |
* |
Part Status |
Discontinued at Digi-Key |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Min Operating Temperature |
-40 °C |
Max Collector Current |
50 A |
Current - Collector Cutoff (Max) |
250 µA |
Technology |
Si |
Pin Count |
18 |
Configuration |
Full Bridge Inverter |
Power - Max |
250 W |
Input |
Single Phase Bridge Rectifier |
Product Type |
Discrete Semiconductor Modules |
Collector Emitter Voltage (VCEO) |
1.9 V |
Subcategory |
Discrete Semiconductor Modules |
Max Power Dissipation |
250 W |
Collector Emitter Breakdown Voltage |
600 V |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
50 A |
Input Capacitance |
3.15 nF |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
3.15 nF @ 25 V |
Product Category |
Discrete Semiconductor Modules |
Microchip APTCV60TLM70T3G
In stock
Manufacturer |
Microchip |
---|---|
Minimum Operating Temperature |
– 40 C |
Package / Case |
Module |
Number of Pins |
24 |
Supplier Device Package |
SP3 |
Mounting Style |
Screw Mount |
Base Product Number |
APTCV60 |
Brand |
Microchip Technology |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Id - Continuous Drain Current |
39 A |
Maximum Operating Temperature |
+ 125 C |
Vr - Reverse Voltage |
600 V |
Mfr |
Microchip Technology |
Package |
Bulk |
Pd - Power Dissipation |
250 W |
Product Status |
Active |
Rds On - Drain-Source Resistance |
70 mOhms |
Transistor Polarity |
N-Channel |
Typical Turn-Off Delay Time |
283 ns, 200 ns |
Typical Turn-On Delay Time |
21 ns, 110 ns |
Vds - Drain-Source Breakdown Voltage |
600 V |
Vgs - Gate-Source Voltage |
20 V |
Vgs th - Gate-Source Threshold Voltage |
2.1 V, 5 V |
Mounting Type |
Chassis Mount |
Mount |
Screw |
Product Type |
Discrete Semiconductor Modules |
Packaging |
Tube |
Max Operating Temperature |
175 °C |
Min Operating Temperature |
-40 °C |
Subcategory |
Discrete Semiconductor Modules |
Technology |
Si |
Configuration |
Three Level Inverter |
Element Configuration |
Dual |
Power - Max |
176 W |
Rise Time |
30 ns, 45 ns |
Input |
Standard |
Collector Emitter Voltage (VCEO) |
600 V |
Max Collector Current |
80 A |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Current - Collector Cutoff (Max) |
250 µA |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
80 A |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
3.15 nF @ 25 V |
Vf - Forward Voltage |
2.2 V at 60 A |
Product Category |
Discrete Semiconductor Modules |
Type |
3-Phase Inverter |
Radiation Hardening |
No |
Microchip APTGF100DA120TG
In stock
Manufacturer |
Microchip |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
SP4 |
Supplier Device Package |
SP4 |
Mfr |
Microchip Technology |
Package |
Bulk |
Product Status |
Obsolete |
Configuration |
Single |
Power - Max |
568 W |
Input |
Standard |
Current - Collector Cutoff (Max) |
350 µA |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Current - Collector (Ic) (Max) |
135 A |
Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 100A |
IGBT Type |
NPT |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
6.9 nF @ 25 V |