Showing 1225–1236 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IRGS4B60KPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Obsolete |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 4A, 100 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Published |
2004 |
Element Configuration |
Single |
Mount |
Surface Mount |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Max Power Dissipation |
63W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
JESD-609 Code |
e3 |
Power Dissipation |
63W |
IGBT Type |
NPT |
Gate Charge |
12nC |
Transistor Application |
MOTOR CONTROL |
Rise Time |
23ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
12A |
Turn On Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 4A |
Turn Off Time-Nom (toff) |
199 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
24A |
Td (on/off) @ 25°C |
22ns/100ns |
Switching Energy |
73μJ (on), 47μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
89ns |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRGS6B60KDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Last Time Buy |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 5A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2012 |
Element Configuration |
Single |
Factory Lead Time |
13 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
90W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
13A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRGS6B60KDPBF |
JESD-30 Code |
R-PSSO-G2 |
JESD-609 Code |
e3 |
Power Dissipation |
90W |
Gate Charge |
18.2nC |
Current - Collector Pulsed (Icm) |
26A |
Transistor Application |
MOTOR CONTROL |
Rise Time |
17ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
13A |
Reverse Recovery Time |
70 ns |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 5A |
Turn Off Time-Nom (toff) |
258 ns |
IGBT Type |
NPT |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Td (on/off) @ 25°C |
25ns/215ns |
Switching Energy |
110μJ (on), 135μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
27ns |
Height |
4.699mm |
Length |
10.668mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRGS6B60KDTRLP
In stock
Manufacturer |
Infineon Technologies |
---|---|
Base Part Number |
IRGS6B60KDPBF |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
260.39037mg |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 5A, 100 Ω, 15V |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Operating Temperature |
-55°C~150°C TJ |
JESD-609 Code |
e3 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Max Power Dissipation |
90W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mount |
Surface Mount |
Factory Lead Time |
13 Weeks |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 5A |
Input Type |
Standard |
Power - Max |
90W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
13A |
Reverse Recovery Time |
70 ns |
Max Breakdown Voltage |
600V |
Element Configuration |
Single |
JESD-30 Code |
R-PSSO-G2 |
Turn Off Time-Nom (toff) |
258 ns |
IGBT Type |
NPT |
Gate Charge |
18.2nC |
Current - Collector Pulsed (Icm) |
26A |
Td (on/off) @ 25°C |
25ns/215ns |
Switching Energy |
110μJ (on), 135μJ (off) |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
Infineon Technologies IRGS6B60KDTRRP
In stock
Manufacturer |
Infineon Technologies |
---|---|
Base Part Number |
IRGS6B60KDPBF |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 5A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2013 |
JESD-609 Code |
e3 |
Packaging |
Tape & Reel (TR) |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Max Power Dissipation |
90W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mount |
Surface Mount |
Factory Lead Time |
13 Weeks |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 5A |
Input Type |
Standard |
Power - Max |
90W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
13A |
Reverse Recovery Time |
70 ns |
Element Configuration |
Single |
JESD-30 Code |
R-PSSO-G2 |
Turn Off Time-Nom (toff) |
258 ns |
IGBT Type |
NPT |
Gate Charge |
18.2nC |
Current - Collector Pulsed (Icm) |
26A |
Td (on/off) @ 25°C |
25ns/215ns |
Switching Energy |
110μJ (on), 135μJ (off) |
Radiation Hardening |
No |
Case Connection |
COLLECTOR |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRGS6B60KPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Obsolete |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 5A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Element Configuration |
Single |
Published |
2004 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
90W |
Terminal Form |
GULL WING |
Current Rating |
13A |
Base Part Number |
IRGS6B60KPBF |
JESD-30 Code |
R-PSSO-G2 |
Mount |
Surface Mount |
Factory Lead Time |
11 Weeks |
IGBT Type |
NPT |
Case Connection |
COLLECTOR |
Transistor Application |
MOTOR CONTROL |
Rise Time |
17ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
13A |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 5A |
Turn Off Time-Nom (toff) |
258 ns |
Gate Charge |
18.2nC |
Current - Collector Pulsed (Icm) |
26A |
Power Dissipation |
90W |
Td (on/off) @ 25°C |
25ns/215ns |
Switching Energy |
110μJ (on), 135μJ (off) |
Height |
4.703mm |
Length |
10.67mm |
Width |
9.652mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
Infineon Technologies IRGS8B60KPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Obsolete |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 8A, 50 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2004 |
JESD-30 Code |
R-PSSO-G2 |
Factory Lead Time |
13 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
167W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
28A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRGS8B60KPBF |
JESD-609 Code |
e3 |
Element Configuration |
Single |
Gate Charge |
29nC |
Current - Collector Pulsed (Icm) |
34A |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Rise Time |
22ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
28A |
Turn On Time |
43 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 8A |
Turn Off Time-Nom (toff) |
220 ns |
IGBT Type |
NPT |
Power Dissipation |
167W |
Case Connection |
COLLECTOR |
Td (on/off) @ 25°C |
23ns/140ns |
Switching Energy |
160μJ (on), 160μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
56ns |
Height |
4.572mm |
Length |
10.668mm |
Width |
9.65mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRGSL10B60KDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2004 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Weight |
2.084002g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 10A, 47 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
16 Weeks |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
156W |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Rise Time-Max |
28ns |
Packaging |
Tube |
Power Dissipation |
156W |
Current - Collector Pulsed (Icm) |
44A |
Td (on/off) @ 25°C |
30ns/230ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
22A |
Reverse Recovery Time |
90 ns |
Turn On Time |
50 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 10A |
Turn Off Time-Nom (toff) |
276 ns |
IGBT Type |
NPT |
Gate Charge |
38nC |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Switching Energy |
140μJ (on), 250μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Height |
9.652mm |
Length |
10.668mm |
Width |
4.826mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRGSL15B60KDPBF-INF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Power - Max |
208 W |
Supplier Device Package |
TO-262 |
Mfr |
Infineon Technologies |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Input Type |
Standard |
Mounting Type |
Through Hole |
Current - Collector (Ic) (Max) |
31 A |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Test Condition |
400V, 15A, 22Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 15A |
IGBT Type |
NPT |
Gate Charge |
56 nC |
Current - Collector Pulsed (Icm) |
62 A |
Td (on/off) @ 25°C |
34ns/184ns |
Switching Energy |
220μJ (on), 340μJ (off) |
Infineon Technologies IRGSL30B60KPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Weight |
2.084002g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Element Configuration |
Single |
Factory Lead Time |
11 Weeks |
Published |
2005 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
370W |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Operating Temperature |
-55°C~175°C TJ |
Power Dissipation |
370W |
Gate Charge |
102nC |
Current - Collector Pulsed (Icm) |
120A |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.35V |
Max Collector Current |
78A |
Turn On Time |
74 ns |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 30A |
Turn Off Time-Nom (toff) |
237 ns |
IGBT Type |
NPT |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Td (on/off) @ 25°C |
46ns/185ns |
Switching Energy |
350μJ (on), 825μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
42ns |
Height |
9.652mm |
Length |
10.668mm |
Width |
4.826mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRGSL4062DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 24A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Case Connection |
COLLECTOR |
Published |
2009 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Element Configuration |
Single |
Power Dissipation |
250W |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Current - Collector Pulsed (Icm) |
96A |
Transistor Application |
POWER CONTROL |
Collector Emitter Voltage (VCEO) |
1.95V |
Max Collector Current |
48A |
Reverse Recovery Time |
89 ns |
Turn On Time |
64 ns |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 24A |
Turn Off Time-Nom (toff) |
164 ns |
IGBT Type |
Trench |
Gate Charge |
50nC |
Td (on/off) @ 25°C |
41ns/104ns |
Switching Energy |
115μJ (on), 600μJ (off) |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
41ns |
Height |
9.65mm |
Length |
10.67mm |
Width |
4.83mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
Polarity/Channel Type |
N-CHANNEL |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRGSL6B60KPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Current-Collector (Ic) (Max) |
13A |
Test Conditions |
400V, 5A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2004 |
Part Status |
Obsolete |
Mounting Type |
Through Hole |
Power - Max |
90W |
Input Type |
Standard |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 5A |
IGBT Type |
NPT |
Gate Charge |
18.2nC |
Current - Collector Pulsed (Icm) |
26A |
Td (on/off) @ 25°C |
25ns/215ns |
Switching Energy |
110μJ (on), 135μJ (off) |
Infineon Technologies SGB02N120ATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
6.2A |
Number of Elements |
1 |
Test Conditions |
800V, 2A, 91 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
16 Weeks |
Pbfree Code |
no |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Published |
2007 |
Reach Compliance Code |
not_compliant |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
62W |
Transistor Application |
POWER CONTROL |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
*GB02N120 |
Turn On Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
3.6V @ 15V, 2A |
Turn Off Time-Nom (toff) |
375 ns |
IGBT Type |
NPT |
Gate Charge |
11nC |
Current - Collector Pulsed (Icm) |
9.6A |
Td (on/off) @ 25°C |
23ns/260ns |
Switching Energy |
220μJ |
RoHS Status |
ROHS3 Compliant |