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Transistors - IGBTs - Single

Infineon Technologies IRGS4B60KPBF

In stock

SKU: IRGS4B60KPBF-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 4A, 100 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Published

2004

Element Configuration

Single

Mount

Surface Mount

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

2

ECCN Code

EAR99

Max Power Dissipation

63W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Power Dissipation

63W

IGBT Type

NPT

Gate Charge

12nC

Transistor Application

MOTOR CONTROL

Rise Time

23ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

12A

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 4A

Turn Off Time-Nom (toff)

199 ns

Case Connection

COLLECTOR

Input Type

Standard

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

22ns/100ns

Switching Energy

73μJ (on), 47μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

89ns

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Infineon Technologies IRGS6B60KDPBF

In stock

SKU: IRGS6B60KDPBF-9
Manufacturer

Infineon Technologies

Part Status

Last Time Buy

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 5A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2012

Element Configuration

Single

Factory Lead Time

13 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

90W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

13A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

IRGS6B60KDPBF

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Power Dissipation

90W

Gate Charge

18.2nC

Current - Collector Pulsed (Icm)

26A

Transistor Application

MOTOR CONTROL

Rise Time

17ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

13A

Reverse Recovery Time

70 ns

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Turn Off Time-Nom (toff)

258 ns

IGBT Type

NPT

Case Connection

COLLECTOR

Input Type

Standard

Td (on/off) @ 25°C

25ns/215ns

Switching Energy

110μJ (on), 135μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

27ns

Height

4.699mm

Length

10.668mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGS6B60KDTRLP

In stock

SKU: IRGS6B60KDTRLP-9
Manufacturer

Infineon Technologies

Base Part Number

IRGS6B60KDPBF

Mounting Type

Surface Mount

Number of Pins

3

Weight

260.39037mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 5A, 100 Ω, 15V

Packaging

Tape & Reel (TR)

Published

2004

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Max Power Dissipation

90W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Mount

Surface Mount

Factory Lead Time

13 Weeks

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Input Type

Standard

Power - Max

90W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

13A

Reverse Recovery Time

70 ns

Max Breakdown Voltage

600V

Element Configuration

Single

JESD-30 Code

R-PSSO-G2

Turn Off Time-Nom (toff)

258 ns

IGBT Type

NPT

Gate Charge

18.2nC

Current - Collector Pulsed (Icm)

26A

Td (on/off) @ 25°C

25ns/215ns

Switching Energy

110μJ (on), 135μJ (off)

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

Infineon Technologies IRGS6B60KDTRRP

In stock

SKU: IRGS6B60KDTRRP-9
Manufacturer

Infineon Technologies

Base Part Number

IRGS6B60KDPBF

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 5A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2013

JESD-609 Code

e3

Packaging

Tape & Reel (TR)

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Max Power Dissipation

90W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Mount

Surface Mount

Factory Lead Time

13 Weeks

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Input Type

Standard

Power - Max

90W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

13A

Reverse Recovery Time

70 ns

Element Configuration

Single

JESD-30 Code

R-PSSO-G2

Turn Off Time-Nom (toff)

258 ns

IGBT Type

NPT

Gate Charge

18.2nC

Current - Collector Pulsed (Icm)

26A

Td (on/off) @ 25°C

25ns/215ns

Switching Energy

110μJ (on), 135μJ (off)

Radiation Hardening

No

Case Connection

COLLECTOR

RoHS Status

ROHS3 Compliant

Infineon Technologies IRGS6B60KPBF

In stock

SKU: IRGS6B60KPBF-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 5A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Element Configuration

Single

Published

2004

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

90W

Terminal Form

GULL WING

Current Rating

13A

Base Part Number

IRGS6B60KPBF

JESD-30 Code

R-PSSO-G2

Mount

Surface Mount

Factory Lead Time

11 Weeks

IGBT Type

NPT

Case Connection

COLLECTOR

Transistor Application

MOTOR CONTROL

Rise Time

17ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

13A

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Turn Off Time-Nom (toff)

258 ns

Gate Charge

18.2nC

Current - Collector Pulsed (Icm)

26A

Power Dissipation

90W

Td (on/off) @ 25°C

25ns/215ns

Switching Energy

110μJ (on), 135μJ (off)

Height

4.703mm

Length

10.67mm

Width

9.652mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Input Type

Standard

Lead Free

Lead Free

Infineon Technologies IRGS8B60KPBF

In stock

SKU: IRGS8B60KPBF-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 8A, 50 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2004

JESD-30 Code

R-PSSO-G2

Factory Lead Time

13 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

167W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

28A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

IRGS8B60KPBF

JESD-609 Code

e3

Element Configuration

Single

Gate Charge

29nC

Current - Collector Pulsed (Icm)

34A

Input Type

Standard

Transistor Application

MOTOR CONTROL

Rise Time

22ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

28A

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 8A

Turn Off Time-Nom (toff)

220 ns

IGBT Type

NPT

Power Dissipation

167W

Case Connection

COLLECTOR

Td (on/off) @ 25°C

23ns/140ns

Switching Energy

160μJ (on), 160μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

56ns

Height

4.572mm

Length

10.668mm

Width

9.65mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRGSL10B60KDPBF

In stock

SKU: IRGSL10B60KDPBF-9
Manufacturer

Infineon Technologies

Published

2004

Mount

Through Hole

Mounting Type

Through Hole

Number of Pins

3

Weight

2.084002g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 10A, 47 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Factory Lead Time

16 Weeks

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

156W

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Rise Time-Max

28ns

Packaging

Tube

Power Dissipation

156W

Current - Collector Pulsed (Icm)

44A

Td (on/off) @ 25°C

30ns/230ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

22A

Reverse Recovery Time

90 ns

Turn On Time

50 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 10A

Turn Off Time-Nom (toff)

276 ns

IGBT Type

NPT

Gate Charge

38nC

Input Type

Standard

Transistor Application

MOTOR CONTROL

Switching Energy

140μJ (on), 250μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Height

9.652mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRGSL15B60KDPBF-INF

In stock

SKU: IRGSL15B60KDPBF-INF-9
Manufacturer

Infineon Technologies

Power - Max

208 W

Supplier Device Package

TO-262

Mfr

Infineon Technologies

Package

Bulk

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

Input Type

Standard

Mounting Type

Through Hole

Current - Collector (Ic) (Max)

31 A

Voltage - Collector Emitter Breakdown (Max)

600 V

Test Condition

400V, 15A, 22Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 15A

IGBT Type

NPT

Gate Charge

56 nC

Current - Collector Pulsed (Icm)

62 A

Td (on/off) @ 25°C

34ns/184ns

Switching Energy

220μJ (on), 340μJ (off)

Infineon Technologies IRGSL30B60KPBF

In stock

SKU: IRGSL30B60KPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Number of Pins

3

Weight

2.084002g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Element Configuration

Single

Factory Lead Time

11 Weeks

Published

2005

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

370W

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Operating Temperature

-55°C~175°C TJ

Power Dissipation

370W

Gate Charge

102nC

Current - Collector Pulsed (Icm)

120A

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

78A

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Turn Off Time-Nom (toff)

237 ns

IGBT Type

NPT

Case Connection

COLLECTOR

Input Type

Standard

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

42ns

Height

9.652mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Infineon Technologies IRGSL4062DPBF

In stock

SKU: IRGSL4062DPBF-9
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mounting Type

Through Hole

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Case Connection

COLLECTOR

Published

2009

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Element Configuration

Single

Power Dissipation

250W

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

96A

Transistor Application

POWER CONTROL

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

48A

Reverse Recovery Time

89 ns

Turn On Time

64 ns

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 24A

Turn Off Time-Nom (toff)

164 ns

IGBT Type

Trench

Gate Charge

50nC

Td (on/off) @ 25°C

41ns/104ns

Switching Energy

115μJ (on), 600μJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

41ns

Height

9.65mm

Length

10.67mm

Width

4.83mm

Radiation Hardening

No

REACH SVHC

No SVHC

Polarity/Channel Type

N-CHANNEL

RoHS Status

RoHS Compliant

Infineon Technologies IRGSL6B60KPBF

In stock

SKU: IRGSL6B60KPBF-9
Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Current-Collector (Ic) (Max)

13A

Test Conditions

400V, 5A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2004

Part Status

Obsolete

Mounting Type

Through Hole

Power - Max

90W

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

IGBT Type

NPT

Gate Charge

18.2nC

Current - Collector Pulsed (Icm)

26A

Td (on/off) @ 25°C

25ns/215ns

Switching Energy

110μJ (on), 135μJ (off)

Infineon Technologies SGB02N120ATMA1

In stock

SKU: SGB02N120ATMA1-9
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

6.2A

Number of Elements

1

Test Conditions

800V, 2A, 91 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

16 Weeks

Pbfree Code

no

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

SINGLE

Terminal Form

GULL WING

Published

2007

Reach Compliance Code

not_compliant

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

1200V

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

62W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

*GB02N120

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 2A

Turn Off Time-Nom (toff)

375 ns

IGBT Type

NPT

Gate Charge

11nC

Current - Collector Pulsed (Icm)

9.6A

Td (on/off) @ 25°C

23ns/260ns

Switching Energy

220μJ

RoHS Status

ROHS3 Compliant