Showing 1237–1248 of 3680 results

Transistors - IGBTs - Single

Infineon Technologies SGB02N120CT

In stock

SKU: SGB02N120CT-9
Manufacturer

Infineon Technologies

Input Type

62 W

Surface Mount

PG-TO263-3-2

Maximum Operating Temperature

Infineon Technologies

Operating Temperature Classification

Bulk

Package Type

Active

Tradename

-55°C ~ 150°C (TJ)

Case Connection

Standard

Factory Lead Time

Surface Mount

Voltage - Collector Emitter Breakdown (Max)

6.2 A

JEDEC-95 Code

1200 V

Channel Type

800V, 2A, 91Ohm, 15V

Test Condition

3.6V @ 15V, 2A

Continuous Collector Current

NPT

Collector-Emitter Voltage-Max

11 nC

Gate Charge

9.6 A

Current - Collector Pulsed (Icm)

23ns/260ns

Td (on/off) @ 25°C

220μJ

Infineon Technologies SGB02N60ATMA1

In stock

SKU: SGB02N60ATMA1-9
Manufacturer

Infineon Technologies

JESD-30 Code

R-PSSO-G2

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 2A, 118 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Pbfree Code

no

Part Status

Obsolete

Published

2006

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

30W

Terminal Form

GULL WING

Pin Count

3

Mount

Surface Mount

Factory Lead Time

26 Weeks

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 2A

Turn Off Time-Nom (toff)

354 ns

Power - Max

30W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

6A

Turn On Time

34 ns

Case Connection

COLLECTOR

Element Configuration

Single

IGBT Type

NPT

Gate Charge

14nC

Current - Collector Pulsed (Icm)

12A

Td (on/off) @ 25°C

20ns/259ns

Switching Energy

64μJ

Radiation Hardening

No

RoHS Status

RoHS Compliant

Input Type

Standard

Lead Free

Contains Lead

Infineon Technologies SGB06N60ATMA1

In stock

SKU: SGB06N60ATMA1-9
Manufacturer

Infineon Technologies

Pbfree Code

no

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 6A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Pin Count

3

Published

2006

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

68W

Terminal Form

GULL WING

Mounting Type

Surface Mount

Mount

Surface Mount

Turn On Time

41 ns

Element Configuration

Single

Input Type

Standard

Power - Max

68W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

12A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 6A

Turn Off Time-Nom (toff)

318 ns

JESD-30 Code

R-PSSO-G2

IGBT Type

NPT

Gate Charge

32nC

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

25ns/220ns

Switching Energy

215μJ

Radiation Hardening

No

Case Connection

COLLECTOR

RoHS Status

RoHS Compliant

Infineon Technologies SGB15N60ATMA1

In stock

SKU: SGB15N60ATMA1-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Mount

Surface Mount

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 15A, 21 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

26 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

139W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pbfree Code

no

Pin Count

4

Max Collector Current

31A

Turn On Time

54 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

139W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 15A

Turn Off Time-Nom (toff)

315 ns

IGBT Type

NPT

Gate Charge

76nC

Current - Collector Pulsed (Icm)

62A

Td (on/off) @ 25°C

32ns/234ns

Switching Energy

570μJ

RoHS Status

RoHS Compliant

Lead Free

Contains Lead

Infineon Technologies SGB15N60HSATMA1

In stock

SKU: SGB15N60HSATMA1-9
Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Current-Collector (Ic) (Max)

27A

Test Conditions

400V, 15A, 23 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

Part Status

Obsolete

Mounting Type

Surface Mount

Power - Max

138W

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

3.15V @ 15V, 15A

IGBT Type

NPT

Gate Charge

80nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

13ns/209ns

Switching Energy

530μJ

Infineon Technologies SGB20N60E3045A

In stock

SKU: SGB20N60E3045A-9
Manufacturer

Infineon Technologies

Power - Max

179 W

Supplier Device Package

PG-TO263-3-2

Base Product Number

SGB20N

Mfr

Infineon Technologies

Package

Bulk

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

Input Type

Standard

Mounting Type

Surface Mount

Current - Collector (Ic) (Max)

40 A

Voltage - Collector Emitter Breakdown (Max)

600 V

Test Condition

400V, 20A, 16Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 20A

Continuous Collector Current

40

IGBT Type

NPT

Gate Charge

100 nC

Current - Collector Pulsed (Icm)

80 A

Td (on/off) @ 25°C

36ns/225ns

Switching Energy

440μJ (on), 330μJ (off)

Infineon Technologies SGB30N60ATMA1

In stock

SKU: SGB30N60ATMA1-9
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

41A

Number of Elements

1

Test Conditions

400V, 30A, 11 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

no

Published

2008

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Terminal Form

GULL WING

Mounting Type

Surface Mount

Factory Lead Time

26 Weeks

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Pin Count

3

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Turn On Time

78 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Turn Off Time-Nom (toff)

391 ns

IGBT Type

NPT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

112A

Td (on/off) @ 25°C

44ns/291ns

Switching Energy

1.29mJ

Base Part Number

GB30N60

RoHS Status

RoHS Compliant

Infineon Technologies SGD02N120BUMA1

In stock

SKU: SGD02N120BUMA1-9
Manufacturer

Infineon Technologies

Published

2007

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

6.2A

Number of Elements

1

Test Conditions

800V, 2A, 91 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

17 Weeks

Pbfree Code

no

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

2

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tape & Reel (TR)

Base Part Number

*GD02N120

JEDEC-95 Code

TO-252AA

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

62W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Pin Count

3

JESD-30 Code

R-PSSO-G2

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 2A

Turn Off Time-Nom (toff)

375 ns

IGBT Type

NPT

Gate Charge

11nC

Current - Collector Pulsed (Icm)

9.6A

Td (on/off) @ 25°C

23ns/260ns

Switching Energy

220μJ

RoHS Status

ROHS3 Compliant

Infineon Technologies SGD04N60BUMA1

In stock

SKU: SGD04N60BUMA1-9
Manufacturer

Infineon Technologies

Pbfree Code

no

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

9.4A

Test Conditions

400V, 4A, 67 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Reach Compliance Code

compliant

Factory Lead Time

26 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2007

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JEDEC-95 Code

TO-252AA

Voltage - Collector Emitter Breakdown (Max)

600V

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

50W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Pin Count

3

JESD-30 Code

R-PSSO-G2

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 4A

Turn Off Time-Nom (toff)

368 ns

IGBT Type

NPT

Gate Charge

24nC

Current - Collector Pulsed (Icm)

19A

Td (on/off) @ 25°C

22ns/237ns

Switching Energy

131μJ

RoHS Status

RoHS Compliant

Infineon Technologies SGD06N60BUMA1

In stock

SKU: SGD06N60BUMA1-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

12A

Number of Elements

1

Test Conditions

400V, 6A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2007

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pbfree Code

no

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Surface Mount

YES

Mounting Type

Surface Mount

JEDEC-95 Code

TO-252AA

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

68W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

41 ns

Base Part Number

*GD06N60

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 6A

Turn Off Time-Nom (toff)

318 ns

IGBT Type

NPT

Gate Charge

32nC

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

25ns/220ns

Switching Energy

215μJ

JESD-30 Code

R-PSSO-G2

RoHS Status

RoHS Compliant

Infineon Technologies SGI02N120XKSA1

In stock

SKU: SGI02N120XKSA1-9
Manufacturer

Infineon Technologies

Pbfree Code

yes

Mounting Type

Through Hole

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 2A, 91 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-30 Code

R-PSIP-T3

Mount

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

62W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Published

2007

Qualification Status

Not Qualified

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

40 ns

Input Type

Standard

Power - Max

62W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

6.2A

Element Configuration

Single

Case Connection

COLLECTOR

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 2A

Turn Off Time-Nom (toff)

375 ns

IGBT Type

NPT

Gate Charge

11nC

Current - Collector Pulsed (Icm)

9.6A

Td (on/off) @ 25°C

23ns/260ns

Switching Energy

220μJ

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies SGP02N120XKSA1

In stock

SKU: SGP02N120XKSA1-9
Manufacturer

Infineon Technologies

Published

2007

Package / Case

TO-220-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

6.2A

Number of Elements

1

Test Conditions

800V, 2A, 91 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

SINGLE

Mounting Type

Through Hole

Factory Lead Time

16 Weeks

JEDEC-95 Code

TO-220AB

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

62W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

40 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 2A

Turn Off Time-Nom (toff)

375 ns

IGBT Type

NPT

Gate Charge

11nC

Current - Collector Pulsed (Icm)

9.6A

Td (on/off) @ 25°C

23ns/260ns

Switching Energy

220μJ

JESD-30 Code

R-PSFM-T3

RoHS Status

ROHS3 Compliant