Showing 1237–1248 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies SGB02N120CT
In stock
Manufacturer |
Infineon Technologies |
---|---|
Input Type |
62 W |
Surface Mount |
PG-TO263-3-2 |
Maximum Operating Temperature |
Infineon Technologies |
Operating Temperature Classification |
Bulk |
Package Type |
Active |
Tradename |
-55°C ~ 150°C (TJ) |
Case Connection |
Standard |
Factory Lead Time |
Surface Mount |
Voltage - Collector Emitter Breakdown (Max) |
6.2 A |
JEDEC-95 Code |
1200 V |
Channel Type |
800V, 2A, 91Ohm, 15V |
Test Condition |
3.6V @ 15V, 2A |
Continuous Collector Current |
NPT |
Collector-Emitter Voltage-Max |
11 nC |
Gate Charge |
9.6 A |
Current - Collector Pulsed (Icm) |
23ns/260ns |
Td (on/off) @ 25°C |
220μJ |
Infineon Technologies SGB02N60ATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-30 Code |
R-PSSO-G2 |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 2A, 118 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Pbfree Code |
no |
Part Status |
Obsolete |
Published |
2006 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
30W |
Terminal Form |
GULL WING |
Pin Count |
3 |
Mount |
Surface Mount |
Factory Lead Time |
26 Weeks |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 2A |
Turn Off Time-Nom (toff) |
354 ns |
Power - Max |
30W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
6A |
Turn On Time |
34 ns |
Case Connection |
COLLECTOR |
Element Configuration |
Single |
IGBT Type |
NPT |
Gate Charge |
14nC |
Current - Collector Pulsed (Icm) |
12A |
Td (on/off) @ 25°C |
20ns/259ns |
Switching Energy |
64μJ |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Input Type |
Standard |
Lead Free |
Contains Lead |
Infineon Technologies SGB06N60ATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Pbfree Code |
no |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 6A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Pin Count |
3 |
Published |
2006 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
68W |
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Turn On Time |
41 ns |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
68W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
12A |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 6A |
Turn Off Time-Nom (toff) |
318 ns |
JESD-30 Code |
R-PSSO-G2 |
IGBT Type |
NPT |
Gate Charge |
32nC |
Current - Collector Pulsed (Icm) |
24A |
Td (on/off) @ 25°C |
25ns/220ns |
Switching Energy |
215μJ |
Radiation Hardening |
No |
Case Connection |
COLLECTOR |
RoHS Status |
RoHS Compliant |
Infineon Technologies SGB15N60ATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Obsolete |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 15A, 21 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
26 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
139W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Pbfree Code |
no |
Pin Count |
4 |
Max Collector Current |
31A |
Turn On Time |
54 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
139W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 15A |
Turn Off Time-Nom (toff) |
315 ns |
IGBT Type |
NPT |
Gate Charge |
76nC |
Current - Collector Pulsed (Icm) |
62A |
Td (on/off) @ 25°C |
32ns/234ns |
Switching Energy |
570μJ |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead |
Infineon Technologies SGB15N60HSATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Current-Collector (Ic) (Max) |
27A |
Test Conditions |
400V, 15A, 23 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Part Status |
Obsolete |
Mounting Type |
Surface Mount |
Power - Max |
138W |
Input Type |
Standard |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
3.15V @ 15V, 15A |
IGBT Type |
NPT |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
13ns/209ns |
Switching Energy |
530μJ |
Infineon Technologies SGB20N60E3045A
In stock
Manufacturer |
Infineon Technologies |
---|---|
Power - Max |
179 W |
Supplier Device Package |
PG-TO263-3-2 |
Base Product Number |
SGB20N |
Mfr |
Infineon Technologies |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Input Type |
Standard |
Mounting Type |
Surface Mount |
Current - Collector (Ic) (Max) |
40 A |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Test Condition |
400V, 20A, 16Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 20A |
Continuous Collector Current |
40 |
IGBT Type |
NPT |
Gate Charge |
100 nC |
Current - Collector Pulsed (Icm) |
80 A |
Td (on/off) @ 25°C |
36ns/225ns |
Switching Energy |
440μJ (on), 330μJ (off) |
Infineon Technologies SGB30N60ATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
41A |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 11 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Published |
2008 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Factory Lead Time |
26 Weeks |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Turn On Time |
78 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 30A |
Turn Off Time-Nom (toff) |
391 ns |
IGBT Type |
NPT |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
112A |
Td (on/off) @ 25°C |
44ns/291ns |
Switching Energy |
1.29mJ |
Base Part Number |
GB30N60 |
RoHS Status |
RoHS Compliant |
Infineon Technologies SGD02N120BUMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2007 |
Mounting Type |
Surface Mount |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
6.2A |
Number of Elements |
1 |
Test Conditions |
800V, 2A, 91 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
17 Weeks |
Pbfree Code |
no |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tape & Reel (TR) |
Base Part Number |
*GD02N120 |
JEDEC-95 Code |
TO-252AA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
62W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Turn On Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
3.6V @ 15V, 2A |
Turn Off Time-Nom (toff) |
375 ns |
IGBT Type |
NPT |
Gate Charge |
11nC |
Current - Collector Pulsed (Icm) |
9.6A |
Td (on/off) @ 25°C |
23ns/260ns |
Switching Energy |
220μJ |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies SGD04N60BUMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Pbfree Code |
no |
Mounting Type |
Surface Mount |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
9.4A |
Test Conditions |
400V, 4A, 67 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Reach Compliance Code |
compliant |
Factory Lead Time |
26 Weeks |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Published |
2007 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JEDEC-95 Code |
TO-252AA |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
50W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Turn On Time |
38 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 4A |
Turn Off Time-Nom (toff) |
368 ns |
IGBT Type |
NPT |
Gate Charge |
24nC |
Current - Collector Pulsed (Icm) |
19A |
Td (on/off) @ 25°C |
22ns/237ns |
Switching Energy |
131μJ |
RoHS Status |
RoHS Compliant |
Infineon Technologies SGD06N60BUMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Obsolete |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
12A |
Number of Elements |
1 |
Test Conditions |
400V, 6A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2007 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pbfree Code |
no |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Surface Mount |
YES |
Mounting Type |
Surface Mount |
JEDEC-95 Code |
TO-252AA |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
68W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
41 ns |
Base Part Number |
*GD06N60 |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 6A |
Turn Off Time-Nom (toff) |
318 ns |
IGBT Type |
NPT |
Gate Charge |
32nC |
Current - Collector Pulsed (Icm) |
24A |
Td (on/off) @ 25°C |
25ns/220ns |
Switching Energy |
215μJ |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
RoHS Compliant |
Infineon Technologies SGI02N120XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Pbfree Code |
yes |
Mounting Type |
Through Hole |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
800V, 2A, 91 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
JESD-30 Code |
R-PSIP-T3 |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
62W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Published |
2007 |
Qualification Status |
Not Qualified |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
40 ns |
Input Type |
Standard |
Power - Max |
62W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
6.2A |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Vce(on) (Max) @ Vge, Ic |
3.6V @ 15V, 2A |
Turn Off Time-Nom (toff) |
375 ns |
IGBT Type |
NPT |
Gate Charge |
11nC |
Current - Collector Pulsed (Icm) |
9.6A |
Td (on/off) @ 25°C |
23ns/260ns |
Switching Energy |
220μJ |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies SGP02N120XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2007 |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
6.2A |
Number of Elements |
1 |
Test Conditions |
800V, 2A, 91 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
SINGLE |
Mounting Type |
Through Hole |
Factory Lead Time |
16 Weeks |
JEDEC-95 Code |
TO-220AB |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
62W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
40 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
3.6V @ 15V, 2A |
Turn Off Time-Nom (toff) |
375 ns |
IGBT Type |
NPT |
Gate Charge |
11nC |
Current - Collector Pulsed (Icm) |
9.6A |
Td (on/off) @ 25°C |
23ns/260ns |
Switching Energy |
220μJ |
JESD-30 Code |
R-PSFM-T3 |
RoHS Status |
ROHS3 Compliant |