Showing 1537–1548 of 3680 results
IXYS IXA4IF1200TC-TRL
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Reel |
| Supplier Device Package |
TO-268AA |
| Brand |
IXYS |
| Mfr |
IXYS |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Input Type |
Standard |
| Subcategory |
IGBTs |
| Power - Max |
45 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
9 A |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 3A |
| Gate Charge |
12 nC |
| Product Category |
IGBT Transistors |
IXYS IXA4IF1200UC-TUB
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
20 Weeks |
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
9A |
| Test Conditions |
600V, 3A, 330 Ω, 15V |
| Series |
XPT™ |
| Part Status |
Active |
| Input Type |
Standard |
| Power - Max |
45W |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 3A |
| IGBT Type |
PT |
| Gate Charge |
12nC |
| Td (on/off) @ 25°C |
70ns/250ns |
| Switching Energy |
400μJ (on), 300μJ (off) |
IXYS IXBA14N300HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Max Power Dissipation |
200W |
| Mounting Type |
Surface Mount |
| Collector-Emitter Breakdown Voltage |
3kV |
| Test Conditions |
960V, 14A, 20 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
14 Weeks |
| Power - Max |
200W |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
38A |
| Reverse Recovery Time |
1.4 μs |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 14A |
| IGBT Type |
NPT |
| Gate Charge |
62nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
40ns/166ns |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBA16N170AHV
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
16A |
| Test Conditions |
1360V, 10A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
BIMOSFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
26 Weeks |
| Input Type |
Standard |
| Reach Compliance Code |
not_compliant |
| Power - Max |
150W |
| Reverse Recovery Time |
25ns |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 10A |
| Gate Charge |
65nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
15ns/250ns |
| Switching Energy |
2.5mJ (off) |
| RoHS Status |
Non-RoHS Compliant |
IXYS IXBF10N300C
In stock
| Manufacturer |
IXYS |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
i4-Pac™-5 (3 Leads) |
| Collector-Emitter Breakdown Voltage |
3kV |
| Test Conditions |
1500V, 10A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Factory Lead Time |
26 Weeks |
| Input Type |
Standard |
| Max Power Dissipation |
240W |
| Power - Max |
240W |
| Collector Emitter Voltage (VCEO) |
6V |
| Max Collector Current |
29A |
| Reverse Recovery Time |
700 ns |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 10A |
| Gate Charge |
208nC |
| Current - Collector Pulsed (Icm) |
240A |
| Td (on/off) @ 25°C |
32ns/390ns |
| Switching Energy |
7.2mJ (on), 1.04mJ (off) |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBF20N360
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
28 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
i4-Pac™-5 |
| Collector-Emitter Breakdown Voltage |
3.6kV |
| Test Conditions |
1500V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
230W |
| Reach Compliance Code |
unknown |
| Input Type |
Standard |
| Power - Max |
230W |
| Collector Emitter Voltage (VCEO) |
3.4V |
| Max Collector Current |
45A |
| Reverse Recovery Time |
1.7 μs |
| Voltage - Collector Emitter Breakdown (Max) |
3600V |
| Vce(on) (Max) @ Vge, Ic |
3.4V @ 15V, 20A |
| Gate Charge |
43nC |
| Current - Collector Pulsed (Icm) |
220A |
| Td (on/off) @ 25°C |
18ns/238ns |
| Switching Energy |
15.5mJ (on), 4.3mJ (off) |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBF40N160
In stock
| Manufacturer |
IXYS |
|---|---|
| Max Power Dissipation |
250W |
| Mounting Type |
Through Hole |
| Package / Case |
i4-Pac™-5 (3 Leads) |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.6kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 25A, 22 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
300 ns |
| Published |
2006 |
| Series |
BIMOSFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Factory Lead Time |
32 Weeks |
| Collector Emitter Voltage (VCEO) |
1.6kV |
| Max Collector Current |
28A |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Power Dissipation |
250W |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Turn On Delay Time |
200 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1600V |
| Turn On Time |
260 ns |
| Vce(on) (Max) @ Vge, Ic |
7.1V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
340 ns |
| Gate Charge |
130nC |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
8V |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXBF42N300
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
i4-Pac™-4, Isolated |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
3kV |
| Number of Elements |
1 |
| Test Conditions |
1500V, 42A, 20 Ω, 15V |
| Pin Count |
3 |
| Factory Lead Time |
30 Weeks |
| Published |
2011 |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
240W |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSIP-T3 |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Turn On Time |
652 ns |
| Input Type |
Standard |
| Power - Max |
240W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
1.7 μs |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 42A |
| Turn Off Time-Nom (toff) |
950 ns |
| Gate Charge |
200nC |
| Current - Collector Pulsed (Icm) |
380A |
| Td (on/off) @ 25°C |
72ns/445ns |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBF55N300
In stock
| Manufacturer |
IXYS |
|---|---|
| Collector- Emitter Voltage VCEO Max |
3 kV |
| Package / Case |
i4-Pac?-5 (3 Leads) |
| Surface Mount |
NO |
| Supplier Device Package |
ISOPLUS i4-PAC? |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Brand |
IXYS |
| Mounting Styles |
Through Hole |
| Number of Elements |
1 |
| Current-Collector (Ic) (Max) |
86 A |
| Ihs Manufacturer |
IXYS CORP |
| Manufacturer Package Code |
ISOPLUS |
| Manufacturer Part Number |
IXBF55N300 |
| Maximum Gate Emitter Voltage |
– 25 V, + 25 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
IXYS |
| Minimum Operating Temperature |
– 55 C |
| Unit Weight |
0.176370 oz |
| Mounting Type |
Through Hole |
| Part Package Code |
ISOPLUS |
| Package |
Tube |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
ISOPLUS, I4PAK-3 |
| Package Shape |
RECTANGULAR |
| Package Style |
IN-LINE |
| Part Life Cycle Code |
Transferred |
| Operating Temperature-Max |
150 °C |
| Product Status |
Active |
| Pd - Power Dissipation |
357 W |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
8.51 |
| Rohs Code |
Yes |
| Tradename |
BIMOSFET |
| Turn-off Time-Nom (toff) |
475 ns |
| Turn-on Time-Nom (ton) |
637 ns |
| Factory Pack QuantityFactory Pack Quantity |
25 |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Terminal Position |
SINGLE |
| Max Power Dissipation |
357 W |
| JESD-609 Code |
e1 |
| Pbfree Code |
Yes |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
IGBTs |
| Element Configuration |
Single |
| Case Connection |
ISOLATED |
| Technology |
Si |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
Single |
| Packaging |
Tube |
| Series |
BIMOSFET? |
| Power Dissipation-Max (Abs) |
290 W |
| Power - Max |
357 W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
IGBT Transistors |
| Collector Emitter Voltage (VCEO) |
3 kV |
| Voltage - Collector Emitter Breakdown (Max) |
3000 V |
| Input Type |
Standard |
| Collector Current-Max (IC) |
73 A |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 55A |
| Collector-Emitter Voltage-Max |
3000 V |
| Gate Charge |
335 nC |
| Current - Collector Pulsed (Icm) |
600 A |
| Gate-Emitter Voltage-Max |
25 V |
| Gate-Emitter Thr Voltage-Max |
5 V |
| Reverse Recovery Time (trr) |
1.9 μs |
| Product Category |
IGBT Transistors |
IXYS IXBH12N300
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
3kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
BIMOSFET™ |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
160W |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Max Collector Current |
30A |
| Reverse Recovery Time |
1.4 μs |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
160W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Turn On Time |
460 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
705 ns |
| Gate Charge |
62nC |
| Current - Collector Pulsed (Icm) |
100A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBH14N300HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
BIMOSFET? |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247HV (IXBH) |
| Mounting Style |
Through Hole |
| Brand |
IXYS |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
IXYS |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Technology |
Si |
| Subcategory |
IGBTs |
| Reach Compliance Code |
unknown |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
200 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
3000 V |
| Current - Collector (Ic) (Max) |
38 A |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 14A |
| Gate Charge |
62 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Reverse Recovery Time (trr) |
1.4 μs |
| Product Category |
IGBT Transistors |
IXYS IXBH16N170
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Bulk |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Turn Off Delay Time |
160 ns |
| Max Power Dissipation |
250W |
| Factory Lead Time |
28 Weeks |
| Published |
2008 |
| Series |
BIMOSFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
1.7kV |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
16A |
| Max Collector Current |
40A |
| Reverse Recovery Time |
1.32 μs |
| Power Dissipation |
150W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
15 ns |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Rise Time |
25ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Pin Count |
3 |
| Element Configuration |
Single |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Turn On Time |
220 ns |
| Vce(on) (Max) @ Vge, Ic |
3.3V @ 15V, 16A |
| Turn Off Time-Nom (toff) |
940 ns |
| Gate Charge |
72nC |
| Current - Collector Pulsed (Icm) |
120A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |