Showing 1549–1560 of 3680 results
IXYS IXBH16N170A
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2000 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Test Conditions |
1360V, 10A, 10 Ω, 15V |
| Turn Off Delay Time |
160 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
150W |
| Packaging |
Bulk |
| Series |
BIMOSFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
LOW SWITCHING LOSSES |
| Voltage - Rated DC |
1.7kV |
| Max Power Dissipation |
150W |
| Current Rating |
16A |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Turn Off Time-Nom (toff) |
370 ns |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Rise Time |
25ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
16A |
| Reverse Recovery Time |
360 ns |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Turn On Time |
43 ns |
| Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 10A |
| Gate Charge |
65nC |
| Current - Collector Pulsed (Icm) |
40A |
| Case Connection |
COLLECTOR |
| Td (on/off) @ 25°C |
15ns/160ns |
| Switching Energy |
1.2mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Fall Time-Max (tf) |
100ns |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
15 ns |
| Lead Free |
Lead Free |
IXYS IXBH20N300
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
BIMOSFET™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
3kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
28 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
250W |
| Terminal Position |
SINGLE |
| Published |
2009 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Max Collector Current |
50A |
| Reverse Recovery Time |
1.35 μs |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Turn On Time |
608 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
695 ns |
| Gate Charge |
105nC |
| Current - Collector Pulsed (Icm) |
140A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXBH20N360HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
8 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Collector-Emitter Breakdown Voltage |
3.6kV |
| Test Conditions |
1500V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
430W |
| Reach Compliance Code |
unknown |
| Input Type |
Standard |
| Power - Max |
430W |
| Collector Emitter Voltage (VCEO) |
3.4V |
| Max Collector Current |
70A |
| Reverse Recovery Time |
1.7 μs |
| Voltage - Collector Emitter Breakdown (Max) |
3600V |
| Vce(on) (Max) @ Vge, Ic |
3.4V @ 15V, 20A |
| Gate Charge |
110nC |
| Current - Collector Pulsed (Icm) |
220A |
| Td (on/off) @ 25°C |
18ns/238ns |
| Switching Energy |
15.5mJ (on), 4.3mJ (off) |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBH24N170
In stock
| Manufacturer |
IXYS |
|---|---|
| Qualification Status |
Not Qualified |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2006 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
250W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Mount |
Through Hole |
| Factory Lead Time |
28 Weeks |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Input Type |
Standard |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Rise Time |
28ns |
| Polarity/Channel Type |
N-CHANNEL |
| Fall Time (Typ) |
26 ns |
| Collector Emitter Voltage (VCEO) |
2.5V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
1.06 μs |
| Continuous Drain Current (ID) |
3.2A |
| Power Dissipation |
38W |
| Element Configuration |
Single |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Drain to Source Breakdown Voltage |
500V |
| Turn On Time |
190 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 24A |
| Drain to Source Resistance |
1.4Ohm |
| Turn Off Time-Nom (toff) |
1285 ns |
| Gate Charge |
140nC |
| Current - Collector Pulsed (Icm) |
230A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Case Connection |
COLLECTOR |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBH28N170A
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Test Conditions |
850V, 14A, 10 Ω, 15V |
| Published |
2005 |
| Series |
BIMOSFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
300W |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Max Collector Current |
30A |
| Reverse Recovery Time |
360 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
300W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
6V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 14A |
| Gate Charge |
105nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
35ns/265ns |
| Switching Energy |
1.2mJ (off) |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBH2N250
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
2.5kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
BIMOSFET™ |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
32W |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Reverse Recovery Time |
920 ns |
| JEDEC-95 Code |
TO-247AD |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
32W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.5V |
| Max Collector Current |
5A |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
2500V |
| Turn On Time |
310 ns |
| Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 2A |
| Turn Off Time-Nom (toff) |
252 ns |
| Gate Charge |
10.6nC |
| Current - Collector Pulsed (Icm) |
13A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBH32N300
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
3kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
BIMOSFET™ |
| JESD-609 Code |
e1 |
| Published |
2009 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
400W |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Max Collector Current |
80A |
| Reverse Recovery Time |
1.5 μs |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
400W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Turn On Time |
573 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 32A |
| Turn Off Time-Nom (toff) |
795 ns |
| Gate Charge |
142nC |
| Current - Collector Pulsed (Icm) |
280A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| JESD-30 Code |
R-PSFM-T3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBH40N160
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Bulk |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.6kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 20A, 22 Ω, 15V |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| Series |
BIMOSFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Voltage - Rated DC |
1.6kV |
| Max Power Dissipation |
350W |
| Current Rating |
33A |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Turn On Time |
260 ns |
| Power Dissipation |
350W |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Rise Time |
60ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.6kV |
| Max Collector Current |
33A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1600V |
| Vce(on) (Max) @ Vge, Ic |
7.1V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
310 ns |
| Element Configuration |
Single |
| Gate Charge |
130nC |
| Current - Collector Pulsed (Icm) |
40A |
| Gate-Emitter Voltage-Max |
20V |
| VCEsat-Max |
6 V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
700ns |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
IXYS IXBH42N170
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
BIMOSFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Turn Off Delay Time |
365 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Published |
2008 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
1.7kV |
| Max Power Dissipation |
360W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
75A |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Reverse Recovery Time |
1.32μs |
| Pin Count |
3 |
| Element Configuration |
Single |
| Power Dissipation |
360W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
45 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
35ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
80A |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Turn On Time |
224 ns |
| Base Part Number |
IXB*42N170 |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 42A |
| Turn Off Time-Nom (toff) |
1070 ns |
| Gate Charge |
188nC |
| Current - Collector Pulsed (Icm) |
300A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXBH42N170A
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Test Conditions |
850V, 21A, 1 Ω, 15V |
| Base Part Number |
IXB*42N170 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Series |
BIMOSFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
357W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| JEDEC-95 Code |
TO-247AD |
| Qualification Status |
Not Qualified |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
357W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
42A |
| Reverse Recovery Time |
330 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Turn On Time |
63 ns |
| Pin Count |
3 |
| Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 21A |
| Turn Off Time-Nom (toff) |
420 ns |
| Gate Charge |
188nC |
| Current - Collector Pulsed (Icm) |
265A |
| Td (on/off) @ 25°C |
19ns/200ns |
| Switching Energy |
3.43mJ (on), 430μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBH42N250
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
28 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
104A |
| Test Conditions |
1250V, 42A, 20 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
500W |
| Reverse Recovery Time |
1.7μs |
| Voltage - Collector Emitter Breakdown (Max) |
2500V |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 42A |
| Gate Charge |
200nC |
| Current - Collector Pulsed (Icm) |
400A |
| Td (on/off) @ 25°C |
72ns/445ns |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBH42N300HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
BIMOSFET? |
| Package / Case |
TO-247-3 Variant |
| Supplier Device Package |
TO-247HV |
| Brand |
IXYS |
| Mfr |
IXYS |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Bulk |
| Mounting Type |
Through Hole |
| Input Type |
Standard |
| Subcategory |
IGBTs |
| Power - Max |
500 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
3000 V |
| Current - Collector (Ic) (Max) |
104 A |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 42A |
| Gate Charge |
200 nC |
| Current - Collector Pulsed (Icm) |
400 A |
| Reverse Recovery Time (trr) |
1.7 μs |
| Product Category |
IGBT Transistors |