Showing 1561–1572 of 3680 results
IXYS IXBH5N160G
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.6kV |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Test Conditions |
960V, 3A, 47 Ω, 10V |
| Packaging |
Tube |
| Published |
2003 |
| Series |
BIMOSFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
68W |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Max Collector Current |
5.7A |
| Pin Count |
3 |
| Element Configuration |
Single |
| Power Dissipation |
68W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.6kV |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1600V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn On Time |
340 ns |
| Vce(on) (Max) @ Vge, Ic |
7.2V @ 15V, 3A |
| Turn Off Time-Nom (toff) |
190 ns |
| Gate Charge |
26nC |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXBK64N250
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Position |
SINGLE |
| Package / Case |
TO-264-3, TO-264AA |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
75A |
| Number of Elements |
1 |
| Operating Temperature (Max.) |
150°C |
| Published |
2011 |
| Series |
BIMOSFET™ |
| Packaging |
Bulk |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Mounting Type |
Through Hole |
| Factory Lead Time |
28 Weeks |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
2500V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
735W |
| Transistor Application |
POWER CONTROL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation-Max (Abs) |
735W |
| Turn On Time |
632 ns |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 64A |
| Turn Off Time-Nom (toff) |
397 ns |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXBK75N170
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
BIMOSFET™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
28 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation |
1.04kW |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2003 |
| Base Part Number |
IXB*75N170 |
| Max Collector Current |
200A |
| Reverse Recovery Time |
1.5 μs |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
1040W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.1V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Turn On Time |
277 ns |
| Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
840 ns |
| Gate Charge |
350nC |
| Current - Collector Pulsed (Icm) |
580A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBL20N300C
In stock
| Manufacturer |
IXYS |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUSi5-Pak™ |
| Collector-Emitter Breakdown Voltage |
3kV |
| Test Conditions |
1500V, 20A, 3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Factory Lead Time |
26 Weeks |
| Input Type |
Standard |
| Max Power Dissipation |
417W |
| Power - Max |
417W |
| Collector Emitter Voltage (VCEO) |
6V |
| Max Collector Current |
50A |
| Reverse Recovery Time |
864 ns |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 20A |
| Gate Charge |
425nC |
| Current - Collector Pulsed (Icm) |
430A |
| Td (on/off) @ 25°C |
33ns/370ns |
| Switching Energy |
23mJ (on), 2.6mJ (off) |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBL64N250
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2010 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUSi5-Pak™ |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
2.5kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSIP-T3 |
| Packaging |
Tube |
| Series |
BIMOSFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
500W |
| Terminal Position |
SINGLE |
| Pin Count |
4 |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Reverse Recovery Time |
160 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
500W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3V |
| Max Collector Current |
116A |
| Voltage - Collector Emitter Breakdown (Max) |
2500V |
| Turn On Time |
632 ns |
| Qualification Status |
Not Qualified |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 64A |
| Turn Off Time-Nom (toff) |
397 ns |
| Gate Charge |
400nC |
| Current - Collector Pulsed (Icm) |
750A |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Case Connection |
ISOLATED |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBP5N160G
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
2.299997g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.6kV |
| Number of Elements |
1 |
| Turn Off Delay Time |
120 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Test Conditions |
960V, 3A, 47 Ω, 10V |
| Packaging |
Tube |
| Published |
2003 |
| Series |
BIMOSFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
68W |
| Mount |
Through Hole |
| Factory Lead Time |
37 Weeks |
| Max Collector Current |
5.7A |
| JEDEC-95 Code |
TO-220AB |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
140 ns |
| Power - Max |
68W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.6kV |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1600V |
| Turn On Time |
340 ns |
| Vce(on) (Max) @ Vge, Ic |
7.2V @ 15V, 3A |
| Turn Off Time-Nom (toff) |
190 ns |
| Gate Charge |
26nC |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXBR42N170
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Reach Compliance Code |
unknown |
| Series |
BIMOSFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
UL RECOGNIZED |
| Max Power Dissipation |
200W |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
32 Weeks |
| Collector Emitter Voltage (VCEO) |
2.9V |
| Base Part Number |
IXB*42N170 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
200W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Max Collector Current |
57A |
| Reverse Recovery Time |
1.32 μs |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Turn On Time |
224 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 42A |
| Turn Off Time-Nom (toff) |
1070 ns |
| Gate Charge |
188nC |
| Current - Collector Pulsed (Icm) |
300A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Pin Count |
247 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBT10N170
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
BIMOSFET™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Test Conditions |
1360V, 10A, 56 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Reach Compliance Code |
unknown |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
PURE TIN |
| Max Power Dissipation |
140W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2003 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reverse Recovery Time |
360 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Power Dissipation |
140W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
20A |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Turn On Time |
63 ns |
| Vce(on) (Max) @ Vge, Ic |
3.8V @ 15V, 10A |
| Turn Off Time-Nom (toff) |
1800 ns |
| Gate Charge |
30nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
35ns/500ns |
| Switching Energy |
6mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBT12N300HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Max Power Dissipation |
160W |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Collector-Emitter Breakdown Voltage |
3kV |
| Test Conditions |
1250V, 12A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
BIMOSFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Matte Tin (Sn) |
| Factory Lead Time |
24 Weeks |
| Input Type |
Standard |
| Reach Compliance Code |
unknown |
| Power - Max |
160W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
30A |
| Reverse Recovery Time |
1.4 μs |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 12A |
| Gate Charge |
62nC |
| Current - Collector Pulsed (Icm) |
100A |
| Td (on/off) @ 25°C |
64ns/180ns |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBT16N170A
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Test Conditions |
1360V, 10A, 10 Ω, 15V |
| Turn Off Delay Time |
220 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2000 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
26 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW SWITCHING LOSSES |
| Voltage - Rated DC |
1.7kV |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
16A |
| Series |
BIMOSFET™ |
| Pin Count |
4 |
| Turn On Time |
43 ns |
| Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 10A |
| Element Configuration |
Single |
| Power Dissipation |
150W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
15 ns |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
16A |
| Reverse Recovery Time |
360 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Turn Off Time-Nom (toff) |
370 ns |
| Gate Charge |
65nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
15ns/160ns |
| Switching Energy |
1.2mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Fall Time-Max (tf) |
100ns |
| Height |
5.1mm |
| Length |
16.05mm |
| Width |
14mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXBT20N300HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Max Power Dissipation |
250W |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Collector-Emitter Breakdown Voltage |
3kV |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
BIMOSFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Matte Tin (Sn) |
| Factory Lead Time |
8 Weeks |
| Input Type |
Standard |
| Reach Compliance Code |
not_compliant |
| Power - Max |
250W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
50A |
| Reverse Recovery Time |
1.35 μs |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 20A |
| Gate Charge |
105nC |
| Current - Collector Pulsed (Icm) |
140A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBT2N250
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
2.5kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Pin Count |
4 |
| Series |
BIMOSFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
32W |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
24 Weeks |
| Voltage - Collector Emitter Breakdown (Max) |
2500V |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
32W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.5kV |
| Max Collector Current |
5A |
| Reverse Recovery Time |
920 ns |
| Turn On Time |
310 ns |
| Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 2A |
| JESD-30 Code |
R-PSSO-G2 |
| Turn Off Time-Nom (toff) |
252 ns |
| Gate Charge |
10.6nC |
| Current - Collector Pulsed (Icm) |
13A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |