Showing 1573–1584 of 3680 results
IXYS IXBT32N300
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
3kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
10 Weeks |
| Pbfree Code |
yes |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
400W |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Series |
BIMOSFET™ |
| Reach Compliance Code |
not_compliant |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
80A |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
400W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Reverse Recovery Time |
1.5 μs |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Turn On Time |
573 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 32A |
| Turn Off Time-Nom (toff) |
795 ns |
| Gate Charge |
142nC |
| Current - Collector Pulsed (Icm) |
280A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBT42N170
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
BIMOSFET™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Turn Off Delay Time |
560 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Reach Compliance Code |
unknown |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
PURE TIN |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
360W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2008 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
80A |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
45 ns |
| Power - Max |
360W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Base Part Number |
IXB*42N170 |
| Pin Count |
4 |
| Reverse Recovery Time |
1.32 μs |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Turn On Time |
224 ns |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 42A |
| Turn Off Time-Nom (toff) |
1070 ns |
| Gate Charge |
188nC |
| Current - Collector Pulsed (Icm) |
300A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXBX55N300
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
3kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
BIMOSFET™ |
| JESD-609 Code |
e1 |
| Published |
2011 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
625W |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Max Collector Current |
130A |
| Reverse Recovery Time |
1.9 μs |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
625W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
| Turn On Time |
637 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 55A |
| Turn Off Time-Nom (toff) |
475 ns |
| Gate Charge |
335nC |
| Current - Collector Pulsed (Icm) |
600A |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
5V |
| JESD-30 Code |
R-PSFM-T3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXBX75N170
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2009 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
IXB*75N170 |
| Packaging |
Tube |
| Series |
BIMOSFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Max Power Dissipation |
1.04kW |
| Mount |
Through Hole |
| Factory Lead Time |
28 Weeks |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
1040W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
200A |
| Reverse Recovery Time |
1.5 μs |
| Turn On Time |
277 ns |
| Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 75A |
| Pin Count |
3 |
| Turn Off Time-Nom (toff) |
840 ns |
| Gate Charge |
350nC |
| Current - Collector Pulsed (Icm) |
580A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
IXYS IXDA20N120AS
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.59999g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Current-Collector (Ic) (Max) |
38A |
| Number of Elements |
1 |
| Test Conditions |
600V, 20A, 82 Ω, 15V |
| Terminal Form |
GULL WING |
| Factory Lead Time |
32 Weeks |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH SPEED |
| Max Power Dissipation |
200W |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
34A |
| Base Part Number |
IXD*20N120 |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
120 ns |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
450 ns |
| IGBT Type |
NPT |
| Gate Charge |
70nC |
| Switching Energy |
3.1mJ (on), 2.4mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXDH20N120
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Base Part Number |
IXD*20N120 |
| Factory Lead Time |
20 Weeks |
| Packaging |
Tube |
| Published |
2004 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
200W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Test Conditions |
600V, 20A, 82 Ω, 15V |
| Pin Count |
3 |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
175 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
200W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
38A |
| JEDEC-95 Code |
TO-247AD |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
570 ns |
| IGBT Type |
NPT |
| Gate Charge |
70nC |
| Current - Collector Pulsed (Icm) |
50A |
| Switching Energy |
3.1mJ (on), 2.4mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXDH30N120
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 30A, 47 Ω, 15V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2005 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
LOW SWITCHING LOSSES |
| Max Power Dissipation |
300W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mount |
Through Hole |
| Factory Lead Time |
32 Weeks |
| JEDEC-95 Code |
TO-247AD |
| Pin Count |
3 |
| Element Configuration |
Single |
| Power Dissipation |
300W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
60A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
170 ns |
| Base Part Number |
IXD*30N120 |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
570 ns |
| IGBT Type |
NPT |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
76A |
| Switching Energy |
4.6mJ (on), 3.4mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXDH35N60B
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Test Conditions |
300V, 35A, 10 Ω, 15V |
| Published |
2000 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
HIGH SPEED |
| Max Power Dissipation |
250W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
32 Weeks |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
75 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
250W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Pin Count |
3 |
| Base Part Number |
IXD*35N60 |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 35A |
| Turn Off Time-Nom (toff) |
390 ns |
| IGBT Type |
NPT |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
70A |
| Switching Energy |
1.6mJ (on), 800μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXDP20N60B
In stock
| Manufacturer |
IXYS |
|---|---|
| Test Conditions |
300V, 20A, 22 Ω, 15V |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
2.299997g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Max Power Dissipation |
140W |
| Factory Lead Time |
32 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
HIGH SPEED |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
32A |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Power Dissipation |
140W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
55 ns |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
315 ns |
| IGBT Type |
NPT |
| Gate Charge |
70nC |
| Current - Collector Pulsed (Icm) |
40A |
| Switching Energy |
900μJ (on), 400μJ (off) |
| RoHS Status |
ROHS3 Compliant |
IXYS IXDP35N60B
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
2.299997g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
300V, 35A, 10 Ω, 15V |
| Base Part Number |
IXD*35N60 |
| Factory Lead Time |
32 Weeks |
| Published |
2000 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
HIGH SPEED |
| Max Power Dissipation |
250W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 35A |
| Turn Off Time-Nom (toff) |
390 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
250W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
75 ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| IGBT Type |
NPT |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
70A |
| Switching Energy |
1.6mJ (on), 800μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Height |
9.15mm |
| Length |
10.66mm |
| Width |
4.82mm |
| RoHS Status |
ROHS3 Compliant |