Showing 1585–1596 of 3680 results

Transistors - IGBTs - Single

IXYS IXDR30N120

In stock

SKU: IXDR30N120-9
Manufacturer

IXYS

Published

2004

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 30A, 47 Ω, 15V

Turn Off Delay Time

500 ns

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXD*30N120

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

32 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

200W

Case Connection

ISOLATED

Input Type

Standard

Turn On Delay Time

100 ns

Transistor Application

POWER CONTROL

Rise Time

70ns

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 30A

Pin Count

3

Turn Off Time-Nom (toff)

570 ns

IGBT Type

NPT

Gate Charge

120nC

Current - Collector Pulsed (Icm)

60A

Switching Energy

4.6mJ (on), 3.4mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity

NPN

Lead Free

Lead Free

IXYS IXEH25N120

In stock

SKU: IXEH25N120-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 20A, 68 Ω, 15V

Pin Count

3

Mount

Through Hole

Published

2005

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

Reverse Recovery Time

130 ns

JEDEC-95 Code

TO-247AD

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.2V

Max Collector Current

36A

Qualification Status

Not Qualified

Element Configuration

Single

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

210 ns

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 25A

Turn Off Time-Nom (toff)

750 ns

IGBT Type

NPT

Gate Charge

100nC

Switching Energy

4.1mJ (on), 1.5mJ (off)

RoHS Status

RoHS Compliant

IXYS IXEH25N120D1

In stock

SKU: IXEH25N120D1-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 20A, 68 Ω, 15V

Pin Count

3

Mount

Through Hole

Published

2005

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

Reverse Recovery Time

130 ns

JEDEC-95 Code

TO-247AD

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.2V

Max Collector Current

36A

Qualification Status

Not Qualified

Element Configuration

Single

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

210 ns

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 25A

Turn Off Time-Nom (toff)

750 ns

IGBT Type

NPT

Gate Charge

100nC

Switching Energy

4.1mJ (on), 1.5mJ (off)

RoHS Status

RoHS Compliant

IXYS IXEH40N120

In stock

SKU: IXEH40N120-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 40A, 39 Ω, 15V

JESD-30 Code

R-PSFM-T3

Mount

Through Hole

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Operating Temperature

-55°C~150°C TJ

Qualification Status

Not Qualified

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3V

Max Collector Current

60A

Reverse Recovery Time

180 ns

Element Configuration

Single

Case Connection

COLLECTOR

Turn On Time

135 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 40A

Turn Off Time-Nom (toff)

490 ns

IGBT Type

NPT

Gate Charge

150nC

Switching Energy

6.1mJ (on), 3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

RoHS Compliant

IXYS IXER60N120

In stock

SKU: IXER60N120-9
Manufacturer

IXYS

Published

2006

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 60A, 22 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

JESD-609 Code

e1

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

375W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

130 ns

Element Configuration

Single

Power Dissipation

375W

Case Connection

ISOLATED

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

50ns

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

95A

Qualification Status

Not Qualified

Polarity

NPN

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 60A

Turn Off Time-Nom (toff)

710 ns

IGBT Type

NPT

Gate Charge

350nC

Switching Energy

7.2mJ (on), 4.8mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

IXYS IXG100IF1200HF

In stock

SKU: IXG100IF1200HF-9
Manufacturer

IXYS

Factory Lead Time

20 Weeks

Mounting Type

Through Hole

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

140A

Series

X2PT™

Part Status

Active

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

1200V

IGBT Type

PT

IXYS IXG65I3300KN

In stock

SKU: IXG65I3300KN-9
Manufacturer

IXYS

Factory Lead Time

32 Weeks

Mounting Type

Through Hole

Package / Case

ISOPLUS264™

Current-Collector (Ic) (Max)

85A

Series

X2PT™

Part Status

Active

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

3300V

IGBT Type

PT

IXYS IXGA12N120A2

In stock

SKU: IXGA12N120A2-9
Manufacturer

IXYS

Packaging

Tube

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.59999g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 12A, 100 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

25 Weeks

Published

2004

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

75W

Terminal Form

GULL WING

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

24A

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

75W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXG*12N120

Pin Count

4

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Turn Off Time-Nom (toff)

1750 ns

IGBT Type

PT

Gate Charge

24nC

Current - Collector Pulsed (Icm)

48A

Td (on/off) @ 25°C

15ns/680ns

Switching Energy

5.4mJ (off)

RoHS Status

ROHS3 Compliant

IXYS IXGA12N120A3

In stock

SKU: IXGA12N120A3-9
Manufacturer

IXYS

Published

2010

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

1.59999g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Pin Count

4

Factory Lead Time

30 Weeks

Series

GenX3™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

100W

Terminal Form

GULL WING

Reach Compliance Code

unknown

Packaging

Tube

JESD-30 Code

R-PSSO-G2

JEDEC-95 Code

TO-263AA

Voltage - Collector Emitter Breakdown (Max)

1200V

Power Dissipation

100W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3V

Max Collector Current

22A

Qualification Status

Not Qualified

Element Configuration

Single

Turn On Time

202 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Turn Off Time-Nom (toff)

1545 ns

IGBT Type

PT

Gate Charge

20.4nC

Current - Collector Pulsed (Icm)

60A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

ROHS3 Compliant

IXYS IXGA12N60B

In stock

SKU: IXGA12N60B-9
Manufacturer

IXYS

Published

2002

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.59999g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 18 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Surface Mount

Series

HiPerFAST™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

100W

Terminal Form

GULL WING

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

24A

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

100W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXG*12N60

Pin Count

3

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

400 ns

Gate Charge

32nC

Current - Collector Pulsed (Icm)

48A

Td (on/off) @ 25°C

20ns/150ns

Switching Energy

500μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

IXYS IXGA12N60BD1

In stock

SKU: IXGA12N60BD1-9
Manufacturer

IXYS

Series

HiPerFAST™

Number of Pins

3

Weight

1.59999g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Terminal Form

GULL WING

Published

2002

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

100W

Terminal Position

SINGLE

Mounting Type

Surface Mount

Mount

Surface Mount

Transistor Application

MOTOR CONTROL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

100W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Max Collector Current

24A

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

400 ns

Gate Charge

32nC

Td (on/off) @ 25°C

20ns/150ns

Switching Energy

500μJ (off)

Base Part Number

IXG*12N60

RoHS Status

RoHS Compliant

IXYS IXGA12N60C

In stock

SKU: IXGA12N60C-9
Manufacturer

IXYS

Series

HiPerFAST™

Number of Pins

3

Weight

1.59999g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 18 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2002

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

100W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Mount

Surface Mount

Max Collector Current

24A

Pin Count

3

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

100W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Base Part Number

IXG*12N60

Turn Off Time-Nom (toff)

170 ns

Gate Charge

32nC

Current - Collector Pulsed (Icm)

48A

Td (on/off) @ 25°C

20ns/60ns

Switching Energy

90μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

180ns

JESD-30 Code

R-PSSO-G2

RoHS Status

RoHS Compliant