Showing 1585–1596 of 3680 results
Transistors - IGBTs - Single
IXYS IXDR30N120
In stock
Manufacturer |
IXYS |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS247™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 30A, 47 Ω, 15V |
Turn Off Delay Time |
500 ns |
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
IXD*30N120 |
Packaging |
Tube |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
32 Weeks |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Power Dissipation |
200W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Turn On Delay Time |
100 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
70ns |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
50A |
Turn On Time |
170 ns |
Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 30A |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
570 ns |
IGBT Type |
NPT |
Gate Charge |
120nC |
Current - Collector Pulsed (Icm) |
60A |
Switching Energy |
4.6mJ (on), 3.4mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Polarity |
NPN |
Lead Free |
Lead Free |
IXYS IXEH25N120
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3 Full Pack |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 20A, 68 Ω, 15V |
Pin Count |
3 |
Mount |
Through Hole |
Published |
2005 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Reverse Recovery Time |
130 ns |
JEDEC-95 Code |
TO-247AD |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.2V |
Max Collector Current |
36A |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
210 ns |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 25A |
Turn Off Time-Nom (toff) |
750 ns |
IGBT Type |
NPT |
Gate Charge |
100nC |
Switching Energy |
4.1mJ (on), 1.5mJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXEH25N120D1
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3 Full Pack |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 20A, 68 Ω, 15V |
Pin Count |
3 |
Mount |
Through Hole |
Published |
2005 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Reverse Recovery Time |
130 ns |
JEDEC-95 Code |
TO-247AD |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.2V |
Max Collector Current |
36A |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
210 ns |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 25A |
Turn Off Time-Nom (toff) |
750 ns |
IGBT Type |
NPT |
Gate Charge |
100nC |
Switching Energy |
4.1mJ (on), 1.5mJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXEH40N120
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3 Full Pack |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 39 Ω, 15V |
JESD-30 Code |
R-PSFM-T3 |
Mount |
Through Hole |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
300W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Operating Temperature |
-55°C~150°C TJ |
Qualification Status |
Not Qualified |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3V |
Max Collector Current |
60A |
Reverse Recovery Time |
180 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Turn On Time |
135 ns |
Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 40A |
Turn Off Time-Nom (toff) |
490 ns |
IGBT Type |
NPT |
Gate Charge |
150nC |
Switching Energy |
6.1mJ (on), 3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
RoHS Status |
RoHS Compliant |
IXYS IXER60N120
In stock
Manufacturer |
IXYS |
---|---|
Published |
2006 |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS247™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 60A, 22 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
JESD-609 Code |
e1 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
375W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tube |
Pin Count |
3 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
130 ns |
Element Configuration |
Single |
Power Dissipation |
375W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
50ns |
Collector Emitter Voltage (VCEO) |
2.7V |
Max Collector Current |
95A |
Qualification Status |
Not Qualified |
Polarity |
NPN |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 60A |
Turn Off Time-Nom (toff) |
710 ns |
IGBT Type |
NPT |
Gate Charge |
350nC |
Switching Energy |
7.2mJ (on), 4.8mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
IXYS IXGA12N120A2
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
1.59999g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 12A, 100 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
25 Weeks |
Published |
2004 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
75W |
Terminal Form |
GULL WING |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
24A |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
75W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*12N120 |
Pin Count |
4 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 12A |
Turn Off Time-Nom (toff) |
1750 ns |
IGBT Type |
PT |
Gate Charge |
24nC |
Current - Collector Pulsed (Icm) |
48A |
Td (on/off) @ 25°C |
15ns/680ns |
Switching Energy |
5.4mJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXGA12N120A3
In stock
Manufacturer |
IXYS |
---|---|
Published |
2010 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Weight |
1.59999g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
4 |
Factory Lead Time |
30 Weeks |
Series |
GenX3™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
100W |
Terminal Form |
GULL WING |
Reach Compliance Code |
unknown |
Packaging |
Tube |
JESD-30 Code |
R-PSSO-G2 |
JEDEC-95 Code |
TO-263AA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Power Dissipation |
100W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3V |
Max Collector Current |
22A |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Turn On Time |
202 ns |
Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 12A |
Turn Off Time-Nom (toff) |
1545 ns |
IGBT Type |
PT |
Gate Charge |
20.4nC |
Current - Collector Pulsed (Icm) |
60A |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
ROHS3 Compliant |
IXYS IXGA12N60B
In stock
Manufacturer |
IXYS |
---|---|
Published |
2002 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
1.59999g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 12A, 18 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
Series |
HiPerFAST™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
100W |
Terminal Form |
GULL WING |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
24A |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
100W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*12N60 |
Pin Count |
3 |
Turn On Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
Turn Off Time-Nom (toff) |
400 ns |
Gate Charge |
32nC |
Current - Collector Pulsed (Icm) |
48A |
Td (on/off) @ 25°C |
20ns/150ns |
Switching Energy |
500μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
RoHS Compliant |
IXYS IXGA12N60BD1
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Number of Pins |
3 |
Weight |
1.59999g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Terminal Form |
GULL WING |
Published |
2002 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
100W |
Terminal Position |
SINGLE |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Transistor Application |
MOTOR CONTROL |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
100W |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Max Collector Current |
24A |
Turn On Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
Turn Off Time-Nom (toff) |
400 ns |
Gate Charge |
32nC |
Td (on/off) @ 25°C |
20ns/150ns |
Switching Energy |
500μJ (off) |
Base Part Number |
IXG*12N60 |
RoHS Status |
RoHS Compliant |
IXYS IXGA12N60C
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Number of Pins |
3 |
Weight |
1.59999g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 12A, 18 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2002 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
100W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Max Collector Current |
24A |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
100W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Turn On Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
Base Part Number |
IXG*12N60 |
Turn Off Time-Nom (toff) |
170 ns |
Gate Charge |
32nC |
Current - Collector Pulsed (Icm) |
48A |
Td (on/off) @ 25°C |
20ns/60ns |
Switching Energy |
90μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
180ns |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
RoHS Compliant |