Showing 1645–1656 of 3680 results

Transistors - IGBTs - Single

IXYS IXGH16N170A

In stock

SKU: IXGH16N170A-9
Manufacturer

IXYS

Published

2012

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

850V, 16A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Pin Count

3

Factory Lead Time

30 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

190W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*16N170

Packaging

Tube

Qualification Status

Not Qualified

Turn On Time

97 ns

Vce(on) (Max) @ Vge, Ic

5V @ 15V, 11A

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

16A

Reverse Recovery Time

230 ns

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

1.5nF

Element Configuration

Single

Power Dissipation

190W

Turn Off Time-Nom (toff)

330 ns

IGBT Type

NPT

Gate Charge

65nC

Current - Collector Pulsed (Icm)

40A

Td (on/off) @ 25°C

36ns/160ns

Switching Energy

900μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXGH16N170AH1

In stock

SKU: IXGH16N170AH1-9
Manufacturer

IXYS

JESD-609 Code

e1

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

850V, 16A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

JESD-30 Code

R-PSFM-T3

Published

2012

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

190W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*16N170

Pin Count

3

Mount

Through Hole

Factory Lead Time

8 Weeks

Turn On Time

97 ns

Element Configuration

Single

Input Type

Standard

Power - Max

190W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

16A

Reverse Recovery Time

230 ns

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1700V

Vce(on) (Max) @ Vge, Ic

5V @ 15V, 11A

Turn Off Time-Nom (toff)

330 ns

Qualification Status

Not Qualified

IGBT Type

NPT

Gate Charge

65nC

Current - Collector Pulsed (Icm)

40A

Td (on/off) @ 25°C

36ns/160ns

Switching Energy

900μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

RoHS Status

RoHS Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

IXYS IXGH16N60B2

In stock

SKU: IXGH16N60B2-9
Manufacturer

IXYS

Package / Case

TO-247AD-3

Brand

IXYS

Factory Pack Quantity:Factory Pack Quantity

30

Packaging

Tube

Series

IXGH16N60

Subcategory

IGBTs

Technology

Si

Product Type

IGBT Transistors

Product Category

IGBT Transistors

IXYS IXGH17N100A

In stock

SKU: IXGH17N100A-9
Manufacturer

IXYS

Published

1997

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

800V, 17A, 82 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

HIGH SPEED

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Base Part Number

IXG*17N100

Voltage - Collector Emitter Breakdown (Max)

1000V

Turn On Time

300 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4V

Max Collector Current

34A

JEDEC-95 Code

TO-247AD

Pin Count

3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 17A

Turn Off Time-Nom (toff)

1450 ns

Gate Charge

100nC

Current - Collector Pulsed (Icm)

68A

Td (on/off) @ 25°C

100ns/500ns

Switching Energy

3mJ (off)

Gate-Emitter Voltage-Max

20V

VCEsat-Max

4 V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

ROHS3 Compliant

IXYS IXGH17N100AU1

In stock

SKU: IXGH17N100AU1-9
Manufacturer

IXYS

Published

1997

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

800V, 17A, 82 Ω, 15V

Turn Off Delay Time

500 ns

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXG*17N100

Mount

Through Hole

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Additional Feature

HIGH SPEED

Voltage - Rated DC

1kV

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

34A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Bulk

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1000V

Turn On Time

300 ns

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

100 ns

Transistor Application

POWER CONTROL

Rise Time

200ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4V

Max Collector Current

34A

Reverse Recovery Time

50ns

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 17A

Turn Off Time-Nom (toff)

1450 ns

Gate Charge

100nC

Current - Collector Pulsed (Icm)

68A

Td (on/off) @ 25°C

100ns/500ns

Switching Energy

3mJ (off)

Gate-Emitter Voltage-Max

20V

VCEsat-Max

4 V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGH17N100U1

In stock

SKU: IXGH17N100U1-9
Manufacturer

IXYS

Packaging

Bulk

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

800V, 17A, 82 Ω, 15V

Turn Off Delay Time

500 ns

Base Part Number

IXG*17N100

Mount

Through Hole

Published

1997

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Voltage - Rated DC

1kV

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

34A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature

-55°C~150°C TJ

Pin Count

3

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1000V

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

100 ns

Transistor Application

POWER CONTROL

Rise Time

200ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.5V

Max Collector Current

34A

Reverse Recovery Time

50ns

Qualification Status

Not Qualified

Element Configuration

Single

Turn On Time

300 ns

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 17A

Turn Off Time-Nom (toff)

1900 ns

Gate Charge

100nC

Current - Collector Pulsed (Icm)

68A

Td (on/off) @ 25°C

100ns/500ns

Switching Energy

3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGH20N100

In stock

SKU: IXGH20N100-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

800V, 20A, 47 Ω, 15V

Pin Count

3

Mount

Through Hole

Published

2000

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*20N100

Operating Temperature

-55°C~150°C TJ

Qualification Status

Not Qualified

Voltage - Collector Emitter Breakdown (Max)

1000V

Turn On Time

30 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1kV

Max Collector Current

40A

JEDEC-95 Code

TO-247AD

Rise Time-Max

200ns

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Turn Off Time-Nom (toff)

700 ns

IGBT Type

PT

Gate Charge

73nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

30ns/350ns

Switching Energy

3.5mJ (off)

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

2000ns

RoHS Status

ROHS3 Compliant

IXYS IXGH20N120A3

In stock

SKU: IXGH20N120A3-9
Manufacturer

IXYS

Published

2001

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

26 Weeks

Series

GenX3™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

180W

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

66 ns

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

180W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.5V

Max Collector Current

40A

JEDEC-95 Code

TO-247AD

Base Part Number

IXG*20N120

Pin Count

3

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Turn Off Time-Nom (toff)

1530 ns

IGBT Type

PT

Gate Charge

50nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

16ns/290ns

Switching Energy

2.85mJ (on), 6.47mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

IXYS IXGH20N120BD1

In stock

SKU: IXGH20N120BD1-9
Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

8 Weeks

Packaging

Tube

Published

2003

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

190W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Number of Elements

1

Base Part Number

IXG*20N120

Max Collector Current

40A

JEDEC-95 Code

TO-247AD

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

190W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Pin Count

3

Qualification Status

Not Qualified

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Turn Off Time-Nom (toff)

630 ns

Gate Charge

72nC

Td (on/off) @ 25°C

25ns/150ns

Switching Energy

2.1mJ (off)

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGH20N120IH

In stock

SKU: IXGH20N120IH-9
Manufacturer

IXYS

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

1.2kV

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Base Part Number

IXG*20N120

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

1200V

RoHS Status

ROHS3 Compliant

IXYS IXGH20N140C3H1

In stock

SKU: IXGH20N140C3H1-9
Manufacturer

IXYS

Series

GenX3™

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.4kV

Number of Elements

1

Test Conditions

700V, 20A, 5 Ω, 15V

Turn Off Delay Time

110 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

3

Mount

Through Hole

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

ULTRA FAST

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2010

JESD-30 Code

R-PSFM-T3

Voltage - Collector Emitter Breakdown (Max)

1400V

Turn On Time

35 ns

Power Dissipation

250W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

19 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

5V

Max Collector Current

42A

Reverse Recovery Time

70ns

Qualification Status

Not Qualified

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

5V @ 15V, 20A

Turn Off Time-Nom (toff)

524 ns

IGBT Type

PT

Gate Charge

88nC

Current - Collector Pulsed (Icm)

108A

Td (on/off) @ 25°C

19ns/110ns

Switching Energy

1.35mJ (on), 440μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGH20N60

In stock

SKU: IXGH20N60-9
Manufacturer

IXYS

Published

1997

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 20A, 82 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXG*20N60

Packaging

Tube

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

150W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.5V

Max Collector Current

40A

Turn On Time

300 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

JESD-30 Code

R-PSFM-T3

Turn Off Time-Nom (toff)

1430 ns

Gate Charge

100nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

100ns/600ns

Switching Energy

1.5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Configuration

SINGLE

RoHS Status

RoHS Compliant