Showing 1657–1668 of 3680 results

Transistors - IGBTs - Single

IXYS IXGH20N60A

In stock

SKU: IXGH20N60A-9
Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Qualification Status

Not Qualified

Mount

Through Hole

Packaging

Tube

Published

1997

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

HIGH SPEED

Max Power Dissipation

150W

Base Part Number

IXG*20N60

Test Conditions

480V, 20A, 82 Ω, 15V

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Turn Off Time-Nom (toff)

1150 ns

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

JEDEC-95 Code

TO-247AD

Turn On Time

300 ns

Case Connection

COLLECTOR

Input Type

Standard

Gate Charge

100nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

100ns/600ns

Switching Energy

1.5mJ (off)

Gate-Emitter Voltage-Max

20V

VCEsat-Max

3 V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

200ns

RoHS Status

RoHS Compliant

IXYS IXGH20N60AU1

In stock

SKU: IXGH20N60AU1-9
Manufacturer

IXYS

Packaging

Tube

Terminal Position

SINGLE

Max Power Dissipation

150W

Additional Feature

HIGH SPEED

Number of Terminations

3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Obsolete

Base Part Number

IXG*20N60

Published

2013

Operating Temperature (Max.)

150°C

Number of Elements

1

Collector-Emitter Breakdown Voltage

600V

Transistor Element Material

SILICON

Package / Case

TO-247-3

Mounting Type

Through Hole

Mount

Through Hole

JESD-30 Code

R-PSFM-T3

Collector Emitter Voltage (VCEO)

3V

Gate-Emitter Thr Voltage-Max

5.5V

VCEsat-Max

3 V

Gate-Emitter Voltage-Max

20V

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

JEDEC-95 Code

TO-247AD

Max Collector Current

40A

Polarity/Channel Type

N-CHANNEL

Pin Count

3

Transistor Application

POWER CONTROL

Power - Max

150W

Input Type

Standard

Case Connection

COLLECTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

IXYS IXGH20N60BD1

In stock

SKU: IXGH20N60BD1-9
Manufacturer

IXYS

Pin Count

3

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 20A, 10 Ω, 15V

Turn Off Delay Time

110 ns

Packaging

Tube

Published

2000

Operating Temperature

-55°C~150°C TJ

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*20N60

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

15 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Input Type

Standard

Turn On Delay Time

15 ns

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

25 ns

JEDEC-95 Code

TO-247AD

Element Configuration

Single

Qualification Status

Not Qualified

Turn Off Time-Nom (toff)

220 ns

Gate Charge

55nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

15ns/110ns

Switching Energy

700μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

150ns

RoHS Status

RoHS Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

IXYS IXGH20N60BU1

In stock

SKU: IXGH20N60BU1-9
Manufacturer

IXYS

Pbfree Code

yes

Package / Case

TO-247-3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Packaging

Tube

Published

2013

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Series

HiPerFAST™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Polarity/Channel Type

N-CHANNEL

Pin Count

3

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

150W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

MOTOR CONTROL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

40A

Base Part Number

IXG*20N60

JEDEC-95 Code

TO-247AD

Turn On Time

15 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Turn Off Time-Nom (toff)

220 ns

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

JESD-30 Code

R-PSFM-T3

RoHS Status

RoHS Compliant

IXYS IXGH240N30PB

In stock

SKU: IXGH240N30PB-9
Manufacturer

IXYS

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

300V

Current-Collector (Ic) (Max)

48A

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Max Collector Current

48A

RoHS Status

ROHS3 Compliant

IXYS IXGH24N120C3

In stock

SKU: IXGH24N120C3-9
Manufacturer

IXYS

Published

2008

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 20A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

30 Weeks

Series

GenX3™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

AVALANCHE RATED

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Base Part Number

IXG*24N120

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

250W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

48A

Pin Count

3

JESD-30 Code

R-PSFM-T3

Input Capacitance

1.9nF

Turn On Time

41 ns

Vce(on) (Max) @ Vge, Ic

4.2V @ 15V, 20A

Turn Off Time-Nom (toff)

430 ns

IGBT Type

PT

Gate Charge

79nC

Current - Collector Pulsed (Icm)

96A

Td (on/off) @ 25°C

16ns/93ns

Switching Energy

1.16mJ (on), 470μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXGH24N120C3H1

In stock

SKU: IXGH24N120C3H1-9
Manufacturer

IXYS

Published

2008

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 20A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Series

GenX3™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

AVALANCHE RATED

Max Power Dissipation

250W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

8 Weeks

Reverse Recovery Time

70 ns

Pin Count

3

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4.2V

Max Collector Current

48A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Base Part Number

IXG*24N120

Turn On Time

51 ns

Vce(on) (Max) @ Vge, Ic

4.2V @ 15V, 20A

Turn Off Time-Nom (toff)

430 ns

IGBT Type

PT

Gate Charge

79nC

Current - Collector Pulsed (Icm)

96A

Td (on/off) @ 25°C

16ns/93ns

Switching Energy

1.16mJ (on), 470μJ (off)

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

IXYS IXGH24N170

In stock

SKU: IXGH24N170-9
Manufacturer

IXYS

JESD-609 Code

e1

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

1360V, 50A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

3

Mount

Through Hole

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*24N170

Published

2003

Qualification Status

Not Qualified

Turn Off Time-Nom (toff)

560 ns

IGBT Type

NPT

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

50A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

105 ns

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 24A

Element Configuration

Single

Power Dissipation

250W

Gate Charge

106nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

42ns/200ns

Switching Energy

8mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

500ns

Height

21.46mm

Length

16.26mm

Width

5.3mm

RoHS Status

ROHS3 Compliant

IXYS IXGH24N170A

In stock

SKU: IXGH24N170A-9
Manufacturer

IXYS

Published

2004

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Test Conditions

850V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXG*24N170

Factory Lead Time

30 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Pin Count

3

Turn On Time

98 ns

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 16A

Power Dissipation

250W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

24A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1700V

Qualification Status

Not Qualified

Element Configuration

Single

Turn Off Time-Nom (toff)

275 ns

IGBT Type

NPT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

75A

Td (on/off) @ 25°C

21ns/336ns

Switching Energy

2.97mJ (on), 790μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

80ns

RoHS Status

ROHS3 Compliant

IXYS IXGH24N170AH1

In stock

SKU: IXGH24N170AH1-9
Manufacturer

IXYS

JESD-609 Code

e1

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

850V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

3

Factory Lead Time

8 Weeks

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*24N170

Published

2009

JESD-30 Code

R-PSFM-T3

Input Capacitance

2.86nF

Turn On Time

54 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

24A

Reverse Recovery Time

200 ns

Voltage - Collector Emitter Breakdown (Max)

1700V

Qualification Status

Not Qualified

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 16A

Turn Off Time-Nom (toff)

456 ns

IGBT Type

NPT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

75A

Td (on/off) @ 25°C

21ns/336ns

Switching Energy

2.97mJ (on), 790μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

80ns

RoHS Status

RoHS Compliant

IXYS IXGH24N60B

In stock

SKU: IXGH24N60B-9
Manufacturer

IXYS

Published

2003

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Bulk

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Voltage - Rated DC

600V

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

48A

Mounting Type

Through Hole

Mount

Through Hole

JEDEC-95 Code

TO-247AD

Pin Count

3

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

15ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

48A

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 24A

Base Part Number

IXG*24N60

Turn Off Time-Nom (toff)

350 ns

Gate Charge

90nC

Current - Collector Pulsed (Icm)

96A

Td (on/off) @ 25°C

25ns/150ns

Switching Energy

600μJ (on), 800μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

IXYS IXGH24N60C4D1

In stock

SKU: IXGH24N60C4D1-9
Manufacturer

IXYS

Pbfree Code

yes

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

360V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-30 Code

R-PSFM-T3

Mount

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

190W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Published

2011

Qualification Status

Not Qualified

Turn On Time

52 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 24A

Input Type

Standard

Power - Max

190W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

56A

Reverse Recovery Time

25 ns

JEDEC-95 Code

TO-247AD

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

248 ns

IGBT Type

PT

Gate Charge

64nC

Current - Collector Pulsed (Icm)

130A

Td (on/off) @ 25°C

21ns/143ns

Switching Energy

400μJ (on), 300μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant