Showing 1669–1680 of 3680 results

Transistors - IGBTs - Single

IXYS IXGH24N60CD1

In stock

SKU: IXGH24N60CD1-9
Manufacturer

IXYS

Pin Count

3

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 24A, 10 Ω, 15V

Turn Off Delay Time

75 ns

Packaging

Tube

Published

2000

Operating Temperature

-55°C~150°C TJ

Series

HiPerFAST™, Lightspeed™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*24N60

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

15 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 24A

Input Type

Standard

Turn On Delay Time

15 ns

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

48A

Reverse Recovery Time

25 ns

JEDEC-95 Code

TO-247AD

Element Configuration

Single

Qualification Status

Not Qualified

Turn Off Time-Nom (toff)

130 ns

Gate Charge

55nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

15ns/75ns

Switching Energy

240μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

110ns

RoHS Status

RoHS Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

IXYS IXGH25N100

In stock

SKU: IXGH25N100-9
Manufacturer

IXYS

JESD-609 Code

e1

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

800V, 25A, 33 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Base Part Number

IXG*25N100

Mount

Through Hole

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

200W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

1997

Pin Count

3

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1000V

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.5V

Max Collector Current

50A

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Turn On Time

350 ns

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 25A

Turn Off Time-Nom (toff)

1670 ns

Gate Charge

130nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

100ns/500ns

Switching Energy

5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

IXYS IXGH25N100A

In stock

SKU: IXGH25N100A-9
Manufacturer

IXYS

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

800V, 25A, 33 Ω, 15V

Turn Off Delay Time

500 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

8 Weeks

Published

1997

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Additional Feature

HIGH SPEED

Voltage - Rated DC

1kV

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

50A

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXG*25N100

Voltage - Collector Emitter Breakdown (Max)

1000V

Turn On Time

350 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

100 ns

Transistor Application

POWER CONTROL

Rise Time

200ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1kV

Max Collector Current

50A

JEDEC-95 Code

TO-247AD

Pin Count

3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 25A

Turn Off Time-Nom (toff)

1520 ns

Gate Charge

130nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

100ns/500ns

Switching Energy

5mJ (off)

Gate-Emitter Voltage-Max

20V

VCEsat-Max

4 V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGH25N100U1

In stock

SKU: IXGH25N100U1-9
Manufacturer

IXYS

Pin Count

3

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

800V, 25A, 33 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

1997

Pbfree Code

yes

Part Status

Obsolete

JESD-609 Code

e1

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

HIGH SPEED

Max Power Dissipation

200W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*25N100

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1000V

Turn On Time

100 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.5V

Max Collector Current

50A

Reverse Recovery Time

50 ns

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 25A

Turn Off Time-Nom (toff)

720 ns

Gate Charge

130nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

100ns/500ns

Switching Energy

5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

3000ns

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Status

RoHS Compliant

IXYS IXGH25N120

In stock

SKU: IXGH25N120-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 25A, 33 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

35

Operating Temperature

-55°C~150°C TJ

Published

1997

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

260

Mount

Through Hole

Factory Lead Time

8 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

JEDEC-95 Code

TO-247AD

Turn On Time

350 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 25A

Pin Count

3

Turn Off Time-Nom (toff)

1920 ns

Gate Charge

130nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

100ns/650ns

Switching Energy

11mJ (off)

Gate-Emitter Voltage-Max

20V

VCEsat-Max

3 V

Gate-Emitter Thr Voltage-Max

6V

Element Configuration

Single

RoHS Status

ROHS3 Compliant

IXYS IXGH25N160

In stock

SKU: IXGH25N160-9
Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.6kV

Number of Elements

1

Max Power Dissipation

300W

Factory Lead Time

28 Weeks

Packaging

Tube

Published

2005

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Turn Off Delay Time

86 ns

Pin Count

3

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1600V

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

47 ns

Power - Max

300W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6kV

Max Collector Current

75A

JESD-30 Code

R-PSFM-T3

Element Configuration

Single

Turn On Time

283 ns

Vce(on) (Max) @ Vge, Ic

4.7V @ 20V, 100A

Turn Off Time-Nom (toff)

526 ns

IGBT Type

NPT

Gate Charge

84nC

Current - Collector Pulsed (Icm)

200A

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXGH28N120BD1

In stock

SKU: IXGH28N120BD1-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 28A, 5 Ω, 15V

Pin Count

3

Operating Temperature

-55°C~150°C TJ

Published

2009

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*28N120

Mount

Through Hole

Factory Lead Time

14 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Element Configuration

Single

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Reverse Recovery Time

40 ns

JEDEC-95 Code

TO-247AD

Turn On Time

63 ns

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 28A

Qualification Status

Not Qualified

Turn Off Time-Nom (toff)

590 ns

IGBT Type

PT

Gate Charge

92nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

30ns/210ns

Switching Energy

2.2mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Case Connection

COLLECTOR

RoHS Status

ROHS3 Compliant

IXYS IXGH28N60B

In stock

SKU: IXGH28N60B-9
Manufacturer

IXYS

Base Part Number

IXG*28N60

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 28A, 10 Ω, 15V

Packaging

Tube

Published

2003

Operating Temperature

-55°C~150°C TJ

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

FAST

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

15 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 28A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

Pin Count

3

Turn Off Time-Nom (toff)

400 ns

Gate Charge

68nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

15ns/175ns

Switching Energy

2mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

400ns

Element Configuration

Single

RoHS Status

RoHS Compliant

IXYS IXGH28N60BD1

In stock

SKU: IXGH28N60BD1-9
Manufacturer

IXYS

Pin Count

3

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 28A, 10 Ω, 15V

Packaging

Tube

Published

2003

Operating Temperature

-55°C~150°C TJ

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*28N60

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 28A

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

25 ns

JEDEC-95 Code

TO-247AD

Element Configuration

Single

Qualification Status

Not Qualified

Turn Off Time-Nom (toff)

800 ns

Gate Charge

68nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

15ns/175ns

Switching Energy

2mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

400ns

Case Connection

COLLECTOR

RoHS Status

RoHS Compliant

IXYS IXGH28N90B

In stock

SKU: IXGH28N90B-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Test Conditions

720V, 28A, 4.7 Ω, 15V

Published

2000

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

6 Weeks

Turn On Time

65 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 28A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

900V

Max Collector Current

51A

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

Pin Count

3

Turn Off Time-Nom (toff)

470 ns

Gate Charge

100nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

30ns/100ns

Switching Energy

1.2mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

220ns

Element Configuration

Single

RoHS Status

ROHS3 Compliant

IXYS IXGH30N120B3

In stock

SKU: IXGH30N120B3-9
Manufacturer

IXYS

Subcategory

IGBTs

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

Brand

IXYS

Factory Pack Quantity:Factory Pack Quantity

30

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Mfr

IXYS

Package

Tube

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

Packaging

Bulk

Series

GenX3™

Mounting Type

Through Hole

Power - Max

300 W

Input Type

Standard

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

1200 V

Current - Collector (Ic) (Max)

60 A

Test Condition

960V, 30A, 5Ohm, 15V

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 30A

IGBT Type

PT

Gate Charge

87 nC

Current - Collector Pulsed (Icm)

150 A

Td (on/off) @ 25°C

16ns/127ns

Switching Energy

3.47mJ (on), 2.16mJ (off)

Reverse Recovery Time (trr)

37 ns

Product Category

IGBT Transistors

IXYS IXGH30N120C3H1

In stock

SKU: IXGH30N120C3H1-9
Manufacturer

IXYS

Pin Count

3

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 24A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

GenX3™

Pbfree Code

yes

Published

2007

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

250W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*30N120

Mount

Through Hole

Factory Lead Time

8 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

60 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4.2V

Max Collector Current

48A

Reverse Recovery Time

70 ns

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

4.2V @ 15V, 24A

Turn Off Time-Nom (toff)

415 ns

IGBT Type

PT

Gate Charge

80nC

Current - Collector Pulsed (Icm)

115A

Td (on/off) @ 25°C

18ns/106ns

Switching Energy

1.45mJ (on), 470μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Status

ROHS3 Compliant