Showing 1669–1680 of 3680 results
Transistors - IGBTs - Single
IXYS IXGH24N60CD1
In stock
Manufacturer |
IXYS |
---|---|
Pin Count |
3 |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 24A, 10 Ω, 15V |
Turn Off Delay Time |
75 ns |
Packaging |
Tube |
Published |
2000 |
Operating Temperature |
-55°C~150°C TJ |
Series |
HiPerFAST™, Lightspeed™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*24N60 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
15 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 24A |
Input Type |
Standard |
Turn On Delay Time |
15 ns |
Power - Max |
150W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
48A |
Reverse Recovery Time |
25 ns |
JEDEC-95 Code |
TO-247AD |
Element Configuration |
Single |
Qualification Status |
Not Qualified |
Turn Off Time-Nom (toff) |
130 ns |
Gate Charge |
55nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
15ns/75ns |
Switching Energy |
240μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
110ns |
RoHS Status |
RoHS Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
IXYS IXGH25N100
In stock
Manufacturer |
IXYS |
---|---|
JESD-609 Code |
e1 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1kV |
Number of Elements |
1 |
Test Conditions |
800V, 25A, 33 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Base Part Number |
IXG*25N100 |
Mount |
Through Hole |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
1997 |
Pin Count |
3 |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1000V |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.5V |
Max Collector Current |
50A |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Turn On Time |
350 ns |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 25A |
Turn Off Time-Nom (toff) |
1670 ns |
Gate Charge |
130nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
100ns/500ns |
Switching Energy |
5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
RoHS Compliant |
IXYS IXGH25N100A
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Bulk |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1kV |
Number of Elements |
1 |
Test Conditions |
800V, 25A, 33 Ω, 15V |
Turn Off Delay Time |
500 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
8 Weeks |
Published |
1997 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
Additional Feature |
HIGH SPEED |
Voltage - Rated DC |
1kV |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Current Rating |
50A |
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
IXG*25N100 |
Voltage - Collector Emitter Breakdown (Max) |
1000V |
Turn On Time |
350 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
100 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
200ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1kV |
Max Collector Current |
50A |
JEDEC-95 Code |
TO-247AD |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
4V @ 15V, 25A |
Turn Off Time-Nom (toff) |
1520 ns |
Gate Charge |
130nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
100ns/500ns |
Switching Energy |
5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
VCEsat-Max |
4 V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
IXYS IXGH25N100U1
In stock
Manufacturer |
IXYS |
---|---|
Pin Count |
3 |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1kV |
Number of Elements |
1 |
Test Conditions |
800V, 25A, 33 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
1997 |
Pbfree Code |
yes |
Part Status |
Obsolete |
JESD-609 Code |
e1 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
HIGH SPEED |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*25N100 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
1000V |
Turn On Time |
100 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.5V |
Max Collector Current |
50A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AD |
Qualification Status |
Not Qualified |
JESD-30 Code |
R-PSFM-T3 |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 25A |
Turn Off Time-Nom (toff) |
720 ns |
Gate Charge |
130nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
100ns/500ns |
Switching Energy |
5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
3000ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
RoHS Status |
RoHS Compliant |
IXYS IXGH25N120
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 25A, 33 Ω, 15V |
Time@Peak Reflow Temperature-Max (s) |
35 |
Operating Temperature |
-55°C~150°C TJ |
Published |
1997 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
260 |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Qualification Status |
Not Qualified |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
50A |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
350 ns |
Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 25A |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
1920 ns |
Gate Charge |
130nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
100ns/650ns |
Switching Energy |
11mJ (off) |
Gate-Emitter Voltage-Max |
20V |
VCEsat-Max |
3 V |
Gate-Emitter Thr Voltage-Max |
6V |
Element Configuration |
Single |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH25N160
In stock
Manufacturer |
IXYS |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.6kV |
Number of Elements |
1 |
Max Power Dissipation |
300W |
Factory Lead Time |
28 Weeks |
Packaging |
Tube |
Published |
2005 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Turn Off Delay Time |
86 ns |
Pin Count |
3 |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1600V |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
47 ns |
Power - Max |
300W |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.6kV |
Max Collector Current |
75A |
JESD-30 Code |
R-PSFM-T3 |
Element Configuration |
Single |
Turn On Time |
283 ns |
Vce(on) (Max) @ Vge, Ic |
4.7V @ 20V, 100A |
Turn Off Time-Nom (toff) |
526 ns |
IGBT Type |
NPT |
Gate Charge |
84nC |
Current - Collector Pulsed (Icm) |
200A |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXGH28N120BD1
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 28A, 5 Ω, 15V |
Pin Count |
3 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2009 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*28N120 |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
50A |
Reverse Recovery Time |
40 ns |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
63 ns |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 28A |
Qualification Status |
Not Qualified |
Turn Off Time-Nom (toff) |
590 ns |
IGBT Type |
PT |
Gate Charge |
92nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
30ns/210ns |
Switching Energy |
2.2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Case Connection |
COLLECTOR |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH28N60B
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*28N60 |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 28A, 10 Ω, 15V |
Packaging |
Tube |
Published |
2003 |
Operating Temperature |
-55°C~150°C TJ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
FAST |
Max Power Dissipation |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
15 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 28A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
JEDEC-95 Code |
TO-247AD |
Qualification Status |
Not Qualified |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
400 ns |
Gate Charge |
68nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
15ns/175ns |
Switching Energy |
2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
400ns |
Element Configuration |
Single |
RoHS Status |
RoHS Compliant |
IXYS IXGH28N60BD1
In stock
Manufacturer |
IXYS |
---|---|
Pin Count |
3 |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 28A, 10 Ω, 15V |
Packaging |
Tube |
Published |
2003 |
Operating Temperature |
-55°C~150°C TJ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*28N60 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 28A |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
25 ns |
JEDEC-95 Code |
TO-247AD |
Element Configuration |
Single |
Qualification Status |
Not Qualified |
Turn Off Time-Nom (toff) |
800 ns |
Gate Charge |
68nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
15ns/175ns |
Switching Energy |
2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
400ns |
Case Connection |
COLLECTOR |
RoHS Status |
RoHS Compliant |
IXYS IXGH28N90B
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Test Conditions |
720V, 28A, 4.7 Ω, 15V |
Published |
2000 |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
6 Weeks |
Turn On Time |
65 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 28A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
900V |
Max Collector Current |
51A |
JEDEC-95 Code |
TO-247AD |
Qualification Status |
Not Qualified |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
470 ns |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
30ns/100ns |
Switching Energy |
1.2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
220ns |
Element Configuration |
Single |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH30N120B3
In stock
Manufacturer |
IXYS |
---|---|
Subcategory |
IGBTs |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AD |
Brand |
IXYS |
Factory Pack Quantity:Factory Pack Quantity |
30 |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Mfr |
IXYS |
Package |
Tube |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Packaging |
Bulk |
Series |
GenX3™ |
Mounting Type |
Through Hole |
Power - Max |
300 W |
Input Type |
Standard |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Current - Collector (Ic) (Max) |
60 A |
Test Condition |
960V, 30A, 5Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 30A |
IGBT Type |
PT |
Gate Charge |
87 nC |
Current - Collector Pulsed (Icm) |
150 A |
Td (on/off) @ 25°C |
16ns/127ns |
Switching Energy |
3.47mJ (on), 2.16mJ (off) |
Reverse Recovery Time (trr) |
37 ns |
Product Category |
IGBT Transistors |
IXYS IXGH30N120C3H1
In stock
Manufacturer |
IXYS |
---|---|
Pin Count |
3 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 24A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
GenX3™ |
Pbfree Code |
yes |
Published |
2007 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
250W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*30N120 |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
60 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
4.2V |
Max Collector Current |
48A |
Reverse Recovery Time |
70 ns |
JEDEC-95 Code |
TO-247AD |
Qualification Status |
Not Qualified |
JESD-30 Code |
R-PSFM-T3 |
Vce(on) (Max) @ Vge, Ic |
4.2V @ 15V, 24A |
Turn Off Time-Nom (toff) |
415 ns |
IGBT Type |
PT |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
115A |
Td (on/off) @ 25°C |
18ns/106ns |
Switching Energy |
1.45mJ (on), 470μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
RoHS Status |
ROHS3 Compliant |