Showing 1693–1704 of 3680 results

Transistors - IGBTs - Single

IXYS IXGH32N170

In stock

SKU: IXGH32N170-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

1020V, 32A, 2.7 Ω, 15V

Turn Off Delay Time

270 ns

Pin Count

3

Operating Temperature

-55°C~150°C TJ

Published

2003

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

350W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*32N170

Mount

Through Hole

Factory Lead Time

28 Weeks

Turn On Time

90 ns

Element Configuration

Single

Input Type

Standard

Turn On Delay Time

45 ns

Power - Max

350W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

75A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1700V

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 32A

Turn Off Time-Nom (toff)

920 ns

Qualification Status

Not Qualified

IGBT Type

NPT

Gate Charge

155nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

45ns/270ns

Switching Energy

11mJ (off)

Height

21.46mm

Length

16.26mm

Width

5.3mm

RoHS Status

ROHS3 Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

IXYS IXGH32N170A

In stock

SKU: IXGH32N170A-9
Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Base Part Number

IXG*32N170

Factory Lead Time

30 Weeks

Packaging

Bulk

Published

2004

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Voltage - Rated DC

1.7kV

Max Power Dissipation

350W

Current Rating

75A

Test Conditions

850V, 32A, 2.7 Ω, 15V

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

107 ns

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

MOTOR CONTROL

Rise Time

57ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

32A

JEDEC-95 Code

TO-247AD

Element Configuration

Single

Power Dissipation

350W

Vce(on) (Max) @ Vge, Ic

5V @ 15V, 21A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

NPT

Gate Charge

155nC

Current - Collector Pulsed (Icm)

110A

Td (on/off) @ 25°C

46ns/260ns

Switching Energy

1.5mJ (off)

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXGH32N60B

In stock

SKU: IXGH32N60B-9
Manufacturer

IXYS

Pin Count

3

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 32A, 4.7 Ω, 15V

Turn Off Delay Time

100 ns

Packaging

Bulk

Published

2000

Operating Temperature

-55°C~150°C TJ

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Voltage - Rated DC

600V

Max Power Dissipation

200W

Current Rating

60A

Base Part Number

IXG*32N60

Mounting Type

Through Hole

Mount

Through Hole

Turn Off Time-Nom (toff)

240 ns

Gate Charge

125nC

Turn On Delay Time

25 ns

Transistor Application

MOTOR CONTROL

Rise Time

20ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

JEDEC-95 Code

TO-247AD

Turn On Time

50 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 32A

Case Connection

COLLECTOR

Element Configuration

Single

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

25ns/100ns

Switching Energy

800μJ (off)

Gate-Emitter Voltage-Max

20V

VCEsat-Max

2.5 V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

Radiation Hardening

No

RoHS Status

RoHS Compliant

Input Type

Standard

Lead Free

Lead Free

IXYS IXGH32N60BU1

In stock

SKU: IXGH32N60BU1-9
Manufacturer

IXYS

Packaging

Bulk

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 32A, 4.7 Ω, 15V

Turn Off Delay Time

100 ns

Base Part Number

IXG*32N60

Mount

Through Hole

Published

2003

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Voltage - Rated DC

600V

Max Power Dissipation

200W

Current Rating

60A

Operating Temperature

-55°C~150°C TJ

Pin Count

3

Turn On Time

50 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 32A

Input Type

Standard

Turn On Delay Time

25 ns

Transistor Application

MOTOR CONTROL

Rise Time

20ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

50ns

JEDEC-95 Code

TO-247AD

Element Configuration

Single

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

240 ns

Gate Charge

110nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

25ns/100ns

Switching Energy

600μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGH32N60CD1

In stock

SKU: IXGH32N60CD1-9
Manufacturer

IXYS

Published

2002

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 32A, 4.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Series

HiPerFAST™, Lightspeed™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Voltage - Rated DC

600V

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

60A

Packaging

Bulk

Base Part Number

IXG*32N60

JEDEC-95 Code

TO-247AD

Turn On Time

50 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

20ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

25ns

Pin Count

3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 32A

Turn Off Time-Nom (toff)

210 ns

Gate Charge

110nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

25ns/85ns

Switching Energy

320μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

Lead Free

Contains Lead

IXYS IXGH32N90B2

In stock

SKU: IXGH32N90B2-9
Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

720V, 32A, 5 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

8 Weeks

Published

2006

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

300W

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

900V

Max Collector Current

64A

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXG*32N90

Pin Count

3

JEDEC-95 Code

TO-247AD

Turn On Time

42 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 32A

Turn Off Time-Nom (toff)

690 ns

IGBT Type

PT

Gate Charge

89nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

20ns/260ns

Switching Energy

2.6mJ (off)

RoHS Status

ROHS3 Compliant

IXYS IXGH32N90B2D1

In stock

SKU: IXGH32N90B2D1-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

720V, 32A, 5 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Published

2005

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

300W

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

64A

Reverse Recovery Time

190 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

900V

Base Part Number

IXG*32N90

Pin Count

3

JEDEC-95 Code

TO-247AD

Turn On Time

42 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 32A

Turn Off Time-Nom (toff)

690 ns

IGBT Type

PT

Gate Charge

89nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

20ns/260ns

Switching Energy

2.2mJ (off)

RoHS Status

ROHS3 Compliant

IXYS IXGH34N60B2

In stock

SKU: IXGH34N60B2-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 5 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Published

2005

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

190W

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

70A

JEDEC-95 Code

TO-247AD

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

190W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.55V

Pin Count

3

Qualification Status

Not Qualified

Turn On Time

28 ns

Vce(on) (Max) @ Vge, Ic

1.55V @ 15V, 24A

Turn Off Time-Nom (toff)

300 ns

Gate Charge

66nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

13ns/150ns

Switching Energy

640μJ (off)

RoHS Status

RoHS Compliant

IXYS IXGH35N120B

In stock

SKU: IXGH35N120B-9
Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 35A, 5 Ω, 15V

Base Part Number

IXG*35N120

Factory Lead Time

8 Weeks

Published

2000

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature

-55°C~150°C TJ

Pin Count

3

Turn On Time

86 ns

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 35A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

70A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Element Configuration

Single

Turn Off Time-Nom (toff)

660 ns

IGBT Type

PT

Gate Charge

170nC

Current - Collector Pulsed (Icm)

140A

Td (on/off) @ 25°C

50ns/180ns

Switching Energy

3.8mJ (off)

Height

21.46mm

Length

16.26mm

Width

5.3mm

RoHS Status

RoHS Compliant

IXYS IXGH36N60A3

In stock

SKU: IXGH36N60A3-9
Manufacturer

IXYS

Series

GenX3™

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2012

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

220W

Terminal Position

SINGLE

Mount

Through Hole

Factory Lead Time

30 Weeks

Turn On Time

43 ns

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.4V

JEDEC-95 Code

TO-247AD

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 30A

Turn Off Time-Nom (toff)

1000 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

IGBT Type

PT

Gate Charge

80nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

18ns/330ns

Switching Energy

740μJ (on), 3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

JESD-30 Code

R-PSFM-T3

Lead Free

Lead Free

IXYS IXGH36N60A3D4

In stock

SKU: IXGH36N60A3D4-9
Manufacturer

IXYS

Base Part Number

IXG*36N60

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 30A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

GenX3™

JESD-609 Code

e1

Published

2009

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

220W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

30 Weeks

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 30A

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

36A

Reverse Recovery Time

3ns

JEDEC-95 Code

TO-247AD

JESD-30 Code

R-PSFM-T3

Pin Count

3

Turn Off Time-Nom (toff)

1000 ns

IGBT Type

PT

Gate Charge

80nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

18ns/330ns

Switching Energy

740μJ (on), 3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

IXYS IXGH36N60B3

In stock

SKU: IXGH36N60B3-9
Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 5 Ω, 15V

Configuration

SINGLE

Factory Lead Time

20 Weeks

Published

2010

Series

GenX3™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

250W

Terminal Position

SINGLE

JESD-30 Code

R-PSFM-T3

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

350 ns

IGBT Type

PT

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

92A

JEDEC-95 Code

TO-247AD

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 30A

Input Type

Standard

Power - Max

250W

Gate Charge

80nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

19ns/125ns

Switching Energy

540μJ (on), 800μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

160ns

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free