Showing 1693–1704 of 3680 results
Transistors - IGBTs - Single
IXYS IXGH32N170
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Test Conditions |
1020V, 32A, 2.7 Ω, 15V |
Turn Off Delay Time |
270 ns |
Pin Count |
3 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2003 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
350W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*32N170 |
Mount |
Through Hole |
Factory Lead Time |
28 Weeks |
Turn On Time |
90 ns |
Element Configuration |
Single |
Input Type |
Standard |
Turn On Delay Time |
45 ns |
Power - Max |
350W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Vce(on) (Max) @ Vge, Ic |
3.3V @ 15V, 32A |
Turn Off Time-Nom (toff) |
920 ns |
Qualification Status |
Not Qualified |
IGBT Type |
NPT |
Gate Charge |
155nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
45ns/270ns |
Switching Energy |
11mJ (off) |
Height |
21.46mm |
Length |
16.26mm |
Width |
5.3mm |
RoHS Status |
ROHS3 Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
IXYS IXGH32N170A
In stock
Manufacturer |
IXYS |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Base Part Number |
IXG*32N170 |
Factory Lead Time |
30 Weeks |
Packaging |
Bulk |
Published |
2004 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
Voltage - Rated DC |
1.7kV |
Max Power Dissipation |
350W |
Current Rating |
75A |
Test Conditions |
850V, 32A, 2.7 Ω, 15V |
Pin Count |
3 |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Turn On Time |
107 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Rise Time |
57ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
32A |
JEDEC-95 Code |
TO-247AD |
Element Configuration |
Single |
Power Dissipation |
350W |
Vce(on) (Max) @ Vge, Ic |
5V @ 15V, 21A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
NPT |
Gate Charge |
155nC |
Current - Collector Pulsed (Icm) |
110A |
Td (on/off) @ 25°C |
46ns/260ns |
Switching Energy |
1.5mJ (off) |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXGH32N60B
In stock
Manufacturer |
IXYS |
---|---|
Pin Count |
3 |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 32A, 4.7 Ω, 15V |
Turn Off Delay Time |
100 ns |
Packaging |
Bulk |
Published |
2000 |
Operating Temperature |
-55°C~150°C TJ |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
60A |
Base Part Number |
IXG*32N60 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn Off Time-Nom (toff) |
240 ns |
Gate Charge |
125nC |
Turn On Delay Time |
25 ns |
Transistor Application |
MOTOR CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
50 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 32A |
Case Connection |
COLLECTOR |
Element Configuration |
Single |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
25ns/100ns |
Switching Energy |
800μJ (off) |
Gate-Emitter Voltage-Max |
20V |
VCEsat-Max |
2.5 V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
150ns |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
IXYS IXGH32N60BU1
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Bulk |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 32A, 4.7 Ω, 15V |
Turn Off Delay Time |
100 ns |
Base Part Number |
IXG*32N60 |
Mount |
Through Hole |
Published |
2003 |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
60A |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
3 |
Turn On Time |
50 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 32A |
Input Type |
Standard |
Turn On Delay Time |
25 ns |
Transistor Application |
MOTOR CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
50ns |
JEDEC-95 Code |
TO-247AD |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
240 ns |
Gate Charge |
110nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
25ns/100ns |
Switching Energy |
600μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
IXYS IXGH32N60CD1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2002 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 32A, 4.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Series |
HiPerFAST™, Lightspeed™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Current Rating |
60A |
Packaging |
Bulk |
Base Part Number |
IXG*32N60 |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
50 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
25ns |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 32A |
Turn Off Time-Nom (toff) |
210 ns |
Gate Charge |
110nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
25ns/85ns |
Switching Energy |
320μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead |
IXYS IXGH32N90B2
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Test Conditions |
720V, 32A, 5 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
8 Weeks |
Published |
2006 |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
300W |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
900V |
Max Collector Current |
64A |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*32N90 |
Pin Count |
3 |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
42 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 32A |
Turn Off Time-Nom (toff) |
690 ns |
IGBT Type |
PT |
Gate Charge |
89nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
20ns/260ns |
Switching Energy |
2.6mJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH32N90B2D1
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Test Conditions |
720V, 32A, 5 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Published |
2005 |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
300W |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
64A |
Reverse Recovery Time |
190 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
900V |
Base Part Number |
IXG*32N90 |
Pin Count |
3 |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
42 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 32A |
Turn Off Time-Nom (toff) |
690 ns |
IGBT Type |
PT |
Gate Charge |
89nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
20ns/260ns |
Switching Energy |
2.2mJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH34N60B2
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 24A, 5 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Published |
2005 |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
190W |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
70A |
JEDEC-95 Code |
TO-247AD |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
190W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.55V |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Turn On Time |
28 ns |
Vce(on) (Max) @ Vge, Ic |
1.55V @ 15V, 24A |
Turn Off Time-Nom (toff) |
300 ns |
Gate Charge |
66nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
13ns/150ns |
Switching Energy |
640μJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXGH35N120B
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 35A, 5 Ω, 15V |
Base Part Number |
IXG*35N120 |
Factory Lead Time |
8 Weeks |
Published |
2000 |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
300W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
3 |
Turn On Time |
86 ns |
Vce(on) (Max) @ Vge, Ic |
3.3V @ 15V, 35A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
70A |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
660 ns |
IGBT Type |
PT |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
140A |
Td (on/off) @ 25°C |
50ns/180ns |
Switching Energy |
3.8mJ (off) |
Height |
21.46mm |
Length |
16.26mm |
Width |
5.3mm |
RoHS Status |
RoHS Compliant |
IXYS IXGH36N60A3
In stock
Manufacturer |
IXYS |
---|---|
Series |
GenX3™ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Published |
2012 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
220W |
Terminal Position |
SINGLE |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
Turn On Time |
43 ns |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.4V |
JEDEC-95 Code |
TO-247AD |
Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 30A |
Turn Off Time-Nom (toff) |
1000 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
IGBT Type |
PT |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/330ns |
Switching Energy |
740μJ (on), 3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
ROHS3 Compliant |
JESD-30 Code |
R-PSFM-T3 |
Lead Free |
Lead Free |
IXYS IXGH36N60A3D4
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*36N60 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 30A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
GenX3™ |
JESD-609 Code |
e1 |
Published |
2009 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
220W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
Turn On Time |
43 ns |
Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 30A |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
36A |
Reverse Recovery Time |
3ns |
JEDEC-95 Code |
TO-247AD |
JESD-30 Code |
R-PSFM-T3 |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
1000 ns |
IGBT Type |
PT |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/330ns |
Switching Energy |
740μJ (on), 3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
ROHS3 Compliant |
Qualification Status |
Not Qualified |
Lead Free |
Lead Free |
IXYS IXGH36N60B3
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 5 Ω, 15V |
Configuration |
SINGLE |
Factory Lead Time |
20 Weeks |
Published |
2010 |
Series |
GenX3™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
250W |
Terminal Position |
SINGLE |
JESD-30 Code |
R-PSFM-T3 |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
350 ns |
IGBT Type |
PT |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
92A |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
Input Type |
Standard |
Power - Max |
250W |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
19ns/125ns |
Switching Energy |
540μJ (on), 800μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
160ns |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |