Showing 1705–1716 of 3680 results
Transistors - IGBTs - Single
IXYS IXGH36N60B3C1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2009 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
IXG*36N60 |
Factory Lead Time |
30 Weeks |
Series |
GenX3™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
250W |
Packaging |
Tube |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
350 ns |
IGBT Type |
PT |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
47 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
Element Configuration |
Single |
Power Dissipation |
250W |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
20ns/125ns |
Switching Energy |
390μJ (on), 800μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
160ns |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH36N60B3D1
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2009 |
Series |
GenX3™ |
Packaging |
Tube |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
Turn Off Time-Nom (toff) |
350 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Reverse Recovery Time |
25ns |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
45 ns |
Pin Count |
3 |
Base Part Number |
IXG*36N60 |
IGBT Type |
PT |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
19ns/125ns |
Switching Energy |
540μJ (on), 800μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
160ns |
RoHS Status |
ROHS3 Compliant |
Qualification Status |
Not Qualified |
Lead Free |
Lead Free |
IXYS IXGH36N60B3D4
In stock
Manufacturer |
IXYS |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 5 Ω, 15V |
Packaging |
Tube |
Published |
2008 |
Operating Temperature |
-55°C~150°C TJ |
Series |
GenX3™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
250W |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
45 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
36A |
Reverse Recovery Time |
60ns |
Base Part Number |
IXG*36N60 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
Turn Off Time-Nom (toff) |
350 ns |
IGBT Type |
PT |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
19ns/125ns |
Switching Energy |
540μJ (on), 800μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Pin Count |
3 |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH38N60
In stock
Manufacturer |
IXYS |
---|---|
Published |
1997 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 38A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
3 |
Mount |
Through Hole |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Packaging |
Tube |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 38A |
Turn Off Time-Nom (toff) |
1800 ns |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
76A |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
200 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Gate Charge |
125nC |
Current - Collector Pulsed (Icm) |
152A |
Td (on/off) @ 25°C |
30ns/600ns |
Switching Energy |
9mJ (off) |
Gate-Emitter Voltage-Max |
20V |
VCEsat-Max |
1.8 V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
1100ns |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
IXYS IXGH38N60U1
In stock
Manufacturer |
IXYS |
---|---|
Qualification Status |
Not Qualified |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature (Max.) |
150°C |
Packaging |
Tube |
Published |
2012 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
200W |
JESD-30 Code |
R-PSFM-T3 |
Mount |
Through Hole |
Power Dissipation |
200W |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
76A |
Continuous Drain Current (ID) |
38A |
JEDEC-95 Code |
TO-247AD |
Drain to Source Breakdown Voltage |
600V |
Turn On Time |
200 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 38A |
Turn Off Time-Nom (toff) |
1800 ns |
Fall Time-Max (tf) |
1100ns |
RoHS Status |
RoHS Compliant |
IXYS IXGH40N120A2
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 40A, 2 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Turn Off Delay Time |
420 ns |
Published |
2005 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
360W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Element Configuration |
Single |
Power Dissipation |
360W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
22 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
75A |
Pin Count |
3 |
Base Part Number |
IXG*40N120 |
Turn On Time |
55 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
Turn Off Time-Nom (toff) |
2300 ns |
IGBT Type |
PT |
Gate Charge |
136nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
22ns/420ns |
Switching Energy |
15mJ (off) |
RoHS Status |
ROHS3 Compliant |
Qualification Status |
Not Qualified |
Lead Free |
Lead Free |
IXYS IXGH40N120B2D1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2009 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 40A, 2 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
3 |
Factory Lead Time |
30 Weeks |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
380W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*40N120 |
Packaging |
Tube |
Qualification Status |
Not Qualified |
Turn Off Time-Nom (toff) |
770 ns |
IGBT Type |
PT |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
75A |
Reverse Recovery Time |
100ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
79 ns |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 40A |
Element Configuration |
Single |
Power Dissipation |
380W |
Gate Charge |
138nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
21ns/290ns |
Switching Energy |
4.5mJ (on), 3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
270ns |
Height |
21.46mm |
Length |
16.26mm |
Width |
5.3mm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXGH40N120C3
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*40N120 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 30A, 3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
GenX3™ |
JESD-609 Code |
e1 |
Published |
2008 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
380W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
52 ns |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
380W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
4.4V |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
JESD-30 Code |
R-PSFM-T3 |
Pin Count |
3 |
Vce(on) (Max) @ Vge, Ic |
4.4V @ 15V, 30A |
Turn Off Time-Nom (toff) |
475 ns |
IGBT Type |
PT |
Gate Charge |
142nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
17ns/130ns |
Switching Energy |
1.8mJ (on), 550μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Qualification Status |
Not Qualified |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH40N120C3D1
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 30A, 3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
GenX3™ |
JESD-609 Code |
e1 |
Published |
2009 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
380W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
Reverse Recovery Time |
100ns |
JEDEC-95 Code |
TO-247AD |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation |
380W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
4.4V |
Max Collector Current |
75A |
Pin Count |
3 |
Base Part Number |
IXG*40N120 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
52 ns |
Vce(on) (Max) @ Vge, Ic |
4.4V @ 15V, 30A |
Turn Off Time-Nom (toff) |
475 ns |
IGBT Type |
PT |
Gate Charge |
142nC |
Current - Collector Pulsed (Icm) |
180A |
Td (on/off) @ 25°C |
17ns/130ns |
Switching Energy |
1.8mJ (on), 550μJ (off) |
JESD-30 Code |
R-PSFM-T3 |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH40N60
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
480V, 40A, 22 Ω, 15V |
Qualification Status |
Not Qualified |
Mount |
Through Hole |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
250W |
Terminal Position |
SINGLE |
Base Part Number |
IXG*40N60 |
Operating Temperature |
-55°C~150°C TJ |
Configuration |
SINGLE |
Turn On Time |
300 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.5V |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn Off Time-Nom (toff) |
1200 ns |
Gate Charge |
200nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
100ns/600ns |
Switching Energy |
3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
RoHS Compliant |
IXYS IXGH40N60B
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 40A, 4.7 Ω, 15V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Published |
2001 |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
IXG*40N60 |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
60 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
75A |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
Turn Off Time-Nom (toff) |
570 ns |
Gate Charge |
116nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
25ns/180ns |
Switching Energy |
2.7mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
RoHS Compliant |
IXYS IXGH40N60B2D1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 30A, 3.3 Ω, 15V |
Turn Off Delay Time |
130 ns |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Mount |
Through Hole |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
300W |
Base Part Number |
IXG*40N60 |
Pin Count |
3 |
Packaging |
Tube |
Element Configuration |
Single |
Turn On Time |
38 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 30A |
Turn On Delay Time |
18 ns |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Reverse Recovery Time |
25 ns |
JEDEC-95 Code |
TO-247AD |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn Off Time-Nom (toff) |
390 ns |
IGBT Type |
PT |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/130ns |
Switching Energy |
400μJ (off) |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |