Showing 1729–1740 of 3680 results
Transistors - IGBTs - Single
IXYS IXGH50N90B2D1
In stock
Manufacturer |
IXYS |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Test Conditions |
720V, 50A, 5 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
30 Weeks |
Packaging |
Tube |
Published |
2006 |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
400W |
Turn Off Delay Time |
350 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
75A |
Reverse Recovery Time |
200ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Power Dissipation |
400W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
20 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
900V |
Base Part Number |
IXG*50N90 |
Pin Count |
3 |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
48 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 50A |
Turn Off Time-Nom (toff) |
820 ns |
IGBT Type |
PT |
Gate Charge |
135nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
20ns/350ns |
Switching Energy |
4.7mJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXGH56N60A3
In stock
Manufacturer |
IXYS |
---|---|
Series |
GenX3™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 44A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
30 Weeks |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
330W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Published |
2009 |
Pin Count |
3 |
Turn On Time |
66 ns |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 44A |
Element Configuration |
Single |
Power Dissipation |
330W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.35V |
Max Collector Current |
150A |
JEDEC-95 Code |
TO-247AD |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Turn Off Time-Nom (toff) |
910 ns |
IGBT Type |
PT |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
370A |
Td (on/off) @ 25°C |
26ns/310ns |
Switching Energy |
1mJ (on), 3.75mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
550ns |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH60N60
In stock
Manufacturer |
IXYS |
---|---|
Published |
2000 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 2.7 Ω, 15V |
Turn Off Delay Time |
30 ns |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
3 |
Mount |
Through Hole |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
300W |
Current Rating |
75A |
Base Part Number |
IXG*60N60 |
Packaging |
Bulk |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
1200 ns |
IGBT Type |
PT |
Input Type |
Standard |
Turn On Delay Time |
50 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
25ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
75 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 60A |
Power Dissipation |
300W |
Case Connection |
COLLECTOR |
Gate Charge |
130nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
50ns/300ns |
Switching Energy |
8mJ (off) |
Gate-Emitter Voltage-Max |
20V |
VCEsat-Max |
1.8 V |
Gate-Emitter Thr Voltage-Max |
5V |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
IXYS IXGH60N60C2
In stock
Manufacturer |
IXYS |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Base Part Number |
IXG*60N60 |
Mount |
Through Hole |
Packaging |
Tube |
Published |
2003 |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
480W |
Test Conditions |
400V, 50A, 2 Ω, 15V |
Pin Count |
3 |
Turn On Time |
43 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 50A |
Input Type |
Standard |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
PT |
Gate Charge |
146nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
18ns/95ns |
Switching Energy |
480μJ (off) |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
IXYS IXGH60N60C3D1
In stock
Manufacturer |
IXYS |
---|---|
Series |
GenX3™ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 40A, 3 Ω, 15V |
Turn Off Delay Time |
70 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
JESD-30 Code |
R-PSFM-T3 |
Published |
2009 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
380W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*60N60 |
Pin Count |
3 |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
Turn On Time |
64 ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Input Type |
Standard |
Turn On Delay Time |
21 ns |
Power - Max |
380W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.5V |
Max Collector Current |
75A |
Reverse Recovery Time |
25 ns |
JEDEC-95 Code |
TO-247AD |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
Turn Off Time-Nom (toff) |
226 ns |
Qualification Status |
Not Qualified |
IGBT Type |
PT |
Gate Charge |
115nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
21ns/70ns |
Switching Energy |
800μJ (on), 450μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
95ns |
RoHS Status |
ROHS3 Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
IXYS IXGH6N170
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Test Conditions |
1360V, 6A, 33 Ω, 15V |
Qualification Status |
Not Qualified |
Factory Lead Time |
28 Weeks |
Published |
2006 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
75W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*6N170 |
Pin Count |
3 |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
600 ns |
IGBT Type |
NPT |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
12A |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Turn On Time |
85 ns |
Vce(on) (Max) @ Vge, Ic |
4V @ 15V, 6A |
Power Dissipation |
75W |
Case Connection |
COLLECTOR |
Gate Charge |
20nC |
Current - Collector Pulsed (Icm) |
24A |
Td (on/off) @ 25°C |
40ns/250ns |
Switching Energy |
1.5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Height |
21.46mm |
Length |
16.26mm |
Width |
5.3mm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXGH6N170A
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*6N170 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Test Conditions |
850V, 6A, 33 Ω, 15V |
Turn Off Delay Time |
220 ns |
Packaging |
Tube |
Published |
2003 |
Operating Temperature |
-55°C~150°C TJ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
75W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
30 Weeks |
Turn On Time |
91 ns |
Vce(on) (Max) @ Vge, Ic |
7V @ 15V, 3A |
Power Dissipation |
75W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
46 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
6A |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Qualification Status |
Not Qualified |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
271 ns |
IGBT Type |
NPT |
Gate Charge |
18.5nC |
Current - Collector Pulsed (Icm) |
14A |
Td (on/off) @ 25°C |
46ns/220ns |
Switching Energy |
590μJ (on), 180μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
65ns |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
IXYS IXGH72N60B3
In stock
Manufacturer |
IXYS |
---|---|
Published |
2009 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 50A, 3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
IXG*72N60 |
Factory Lead Time |
30 Weeks |
Series |
GenX3™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
540W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Packaging |
Tube |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
PT |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
540W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
63 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 60A |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Gate Charge |
230nC |
Current - Collector Pulsed (Icm) |
400A |
Td (on/off) @ 25°C |
31ns/150ns |
Switching Energy |
1.38mJ (on), 1.05mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
160ns |
Height |
21.46mm |
Length |
16.26mm |
Width |
5.3mm |
RoHS Status |
ROHS3 Compliant |
IXYS IXGH72N60C3
In stock
Manufacturer |
IXYS |
---|---|
Series |
GenX3™ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 50A, 2 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Pin Count |
3 |
Published |
2009 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
540W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*72N60 |
Mount |
Through Hole |
Factory Lead Time |
20 Weeks |
Turn On Time |
62 ns |
Qualification Status |
Not Qualified |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
540W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.5V |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 50A |
Turn Off Time-Nom (toff) |
244 ns |
JESD-30 Code |
R-PSFM-T3 |
IGBT Type |
PT |
Gate Charge |
174nC |
Current - Collector Pulsed (Icm) |
360A |
Td (on/off) @ 25°C |
27ns/77ns |
Switching Energy |
1.03mJ (on), 480μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
ROHS3 Compliant |
Configuration |
SINGLE |
Lead Free |
Lead Free |
IXYS IXGH85N30C3
In stock
Manufacturer |
IXYS |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
300V |
Number of Elements |
1 |
Max Power Dissipation |
333W |
Factory Lead Time |
24 Weeks |
Packaging |
Tube |
Published |
2008 |
Series |
GenX3™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Test Conditions |
200V, 42.5A, 3.3 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Max Collector Current |
75A |
JEDEC-95 Code |
TO-247AD |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
333W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.9V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Turn On Time |
55 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 85A |
Turn Off Time-Nom (toff) |
221 ns |
IGBT Type |
PT |
Gate Charge |
136nC |
Current - Collector Pulsed (Icm) |
420A |
Td (on/off) @ 25°C |
25ns/100ns |
Switching Energy |
200μJ (on), 390μJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXGJ40N60C2D1
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3, Short Tab |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Base Part Number |
IXG*40N60 |
Mount |
Through Hole |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
300W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2010 |
Pin Count |
4 |
JEDEC-95 Code |
TO-268 |
Turn On Time |
38 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.7V |
Max Collector Current |
75A |
Reverse Recovery Time |
25 ns |
JESD-30 Code |
R-PSIP-T3 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 30A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
PT |
Gate Charge |
95nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/90ns |
Switching Energy |
200μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
RoHS Compliant |
IXYS IXGK120N60B
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*120N60 |
Package / Case |
TO-264-3, TO-264AA |
Number of Pins |
3 |
Weight |
10.000011g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 100A, 2.4 Ω, 15V |
Packaging |
Tube |
Published |
2004 |
Operating Temperature |
-55°C~150°C TJ |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
660W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 120A |
Turn Off Time-Nom (toff) |
540 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
660W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
200A |
Turn On Time |
120 ns |
Qualification Status |
Not Qualified |
Pin Count |
3 |
IGBT Type |
PT |
Gate Charge |
350nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
60ns/200ns |
Switching Energy |
2.4mJ (on), 5.5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
280ns |
Element Configuration |
Single |
RoHS Status |
RoHS Compliant |