Showing 1729–1740 of 3680 results

Transistors - IGBTs - Single

IXYS IXGH50N90B2D1

In stock

SKU: IXGH50N90B2D1-9
Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

720V, 50A, 5 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

30 Weeks

Packaging

Tube

Published

2006

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

400W

Turn Off Delay Time

350 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

75A

Reverse Recovery Time

200ns

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

400W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

20 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

900V

Base Part Number

IXG*50N90

Pin Count

3

JEDEC-95 Code

TO-247AD

Turn On Time

48 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Turn Off Time-Nom (toff)

820 ns

IGBT Type

PT

Gate Charge

135nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

20ns/350ns

Switching Energy

4.7mJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXGH56N60A3

In stock

SKU: IXGH56N60A3-9
Manufacturer

IXYS

Series

GenX3™

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 44A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

30 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

330W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2009

Pin Count

3

Turn On Time

66 ns

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 44A

Element Configuration

Single

Power Dissipation

330W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.35V

Max Collector Current

150A

JEDEC-95 Code

TO-247AD

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Turn Off Time-Nom (toff)

910 ns

IGBT Type

PT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

370A

Td (on/off) @ 25°C

26ns/310ns

Switching Energy

1mJ (on), 3.75mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

550ns

RoHS Status

ROHS3 Compliant

IXYS IXGH60N60

In stock

SKU: IXGH60N60-9
Manufacturer

IXYS

Published

2000

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 60A, 2.7 Ω, 15V

Turn Off Delay Time

30 ns

Operating Temperature

-55°C~150°C TJ

Pin Count

3

Mount

Through Hole

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Voltage - Rated DC

600V

Max Power Dissipation

300W

Current Rating

75A

Base Part Number

IXG*60N60

Packaging

Bulk

Element Configuration

Single

Turn Off Time-Nom (toff)

1200 ns

IGBT Type

PT

Input Type

Standard

Turn On Delay Time

50 ns

Transistor Application

POWER CONTROL

Rise Time

25ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

JEDEC-95 Code

TO-247AD

Turn On Time

75 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 60A

Power Dissipation

300W

Case Connection

COLLECTOR

Gate Charge

130nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/300ns

Switching Energy

8mJ (off)

Gate-Emitter Voltage-Max

20V

VCEsat-Max

1.8 V

Gate-Emitter Thr Voltage-Max

5V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGH60N60C2

In stock

SKU: IXGH60N60C2-9
Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Base Part Number

IXG*60N60

Mount

Through Hole

Packaging

Tube

Published

2003

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

480W

Test Conditions

400V, 50A, 2 Ω, 15V

Pin Count

3

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Input Type

Standard

Power - Max

480W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

JEDEC-95 Code

TO-247AD

Element Configuration

Single

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

210 ns

IGBT Type

PT

Gate Charge

146nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

18ns/95ns

Switching Energy

480μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGH60N60C3D1

In stock

SKU: IXGH60N60C3D1-9
Manufacturer

IXYS

Series

GenX3™

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 3 Ω, 15V

Turn Off Delay Time

70 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-30 Code

R-PSFM-T3

Published

2009

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

380W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*60N60

Pin Count

3

Mount

Through Hole

Factory Lead Time

30 Weeks

Turn On Time

64 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Input Type

Standard

Turn On Delay Time

21 ns

Power - Max

380W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.5V

Max Collector Current

75A

Reverse Recovery Time

25 ns

JEDEC-95 Code

TO-247AD

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Turn Off Time-Nom (toff)

226 ns

Qualification Status

Not Qualified

IGBT Type

PT

Gate Charge

115nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

21ns/70ns

Switching Energy

800μJ (on), 450μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

95ns

RoHS Status

ROHS3 Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

IXYS IXGH6N170

In stock

SKU: IXGH6N170-9
Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

1360V, 6A, 33 Ω, 15V

Qualification Status

Not Qualified

Factory Lead Time

28 Weeks

Published

2006

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

75W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*6N170

Pin Count

3

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Turn Off Time-Nom (toff)

600 ns

IGBT Type

NPT

Input Type

Standard

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

12A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

85 ns

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 6A

Power Dissipation

75W

Case Connection

COLLECTOR

Gate Charge

20nC

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

40ns/250ns

Switching Energy

1.5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Height

21.46mm

Length

16.26mm

Width

5.3mm

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXGH6N170A

In stock

SKU: IXGH6N170A-9
Manufacturer

IXYS

Base Part Number

IXG*6N170

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

850V, 6A, 33 Ω, 15V

Turn Off Delay Time

220 ns

Packaging

Tube

Published

2003

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

75W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

30 Weeks

Turn On Time

91 ns

Vce(on) (Max) @ Vge, Ic

7V @ 15V, 3A

Power Dissipation

75W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

46 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

6A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1700V

Qualification Status

Not Qualified

Pin Count

3

Turn Off Time-Nom (toff)

271 ns

IGBT Type

NPT

Gate Charge

18.5nC

Current - Collector Pulsed (Icm)

14A

Td (on/off) @ 25°C

46ns/220ns

Switching Energy

590μJ (on), 180μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

65ns

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

IXYS IXGH72N60B3

In stock

SKU: IXGH72N60B3-9
Manufacturer

IXYS

Published

2009

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXG*72N60

Factory Lead Time

30 Weeks

Series

GenX3™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

540W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Pin Count

3

Turn Off Time-Nom (toff)

370 ns

IGBT Type

PT

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

540W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

JEDEC-95 Code

TO-247AD

Turn On Time

63 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 60A

Qualification Status

Not Qualified

Element Configuration

Single

Gate Charge

230nC

Current - Collector Pulsed (Icm)

400A

Td (on/off) @ 25°C

31ns/150ns

Switching Energy

1.38mJ (on), 1.05mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

160ns

Height

21.46mm

Length

16.26mm

Width

5.3mm

RoHS Status

ROHS3 Compliant

IXYS IXGH72N60C3

In stock

SKU: IXGH72N60C3-9
Manufacturer

IXYS

Series

GenX3™

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 2 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

3

Published

2009

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

540W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*72N60

Mount

Through Hole

Factory Lead Time

20 Weeks

Turn On Time

62 ns

Qualification Status

Not Qualified

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

540W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.5V

Max Collector Current

75A

JEDEC-95 Code

TO-247AD

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Turn Off Time-Nom (toff)

244 ns

JESD-30 Code

R-PSFM-T3

IGBT Type

PT

Gate Charge

174nC

Current - Collector Pulsed (Icm)

360A

Td (on/off) @ 25°C

27ns/77ns

Switching Energy

1.03mJ (on), 480μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

ROHS3 Compliant

Configuration

SINGLE

Lead Free

Lead Free

IXYS IXGH85N30C3

In stock

SKU: IXGH85N30C3-9
Manufacturer

IXYS

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

300V

Number of Elements

1

Max Power Dissipation

333W

Factory Lead Time

24 Weeks

Packaging

Tube

Published

2008

Series

GenX3™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Test Conditions

200V, 42.5A, 3.3 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Max Collector Current

75A

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

333W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.9V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Turn On Time

55 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 85A

Turn Off Time-Nom (toff)

221 ns

IGBT Type

PT

Gate Charge

136nC

Current - Collector Pulsed (Icm)

420A

Td (on/off) @ 25°C

25ns/100ns

Switching Energy

200μJ (on), 390μJ (off)

RoHS Status

ROHS3 Compliant

IXYS IXGJ40N60C2D1

In stock

SKU: IXGJ40N60C2D1-9
Manufacturer

IXYS

Series

HiPerFAST™

Mounting Type

Through Hole

Package / Case

TO-220-3, Short Tab

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Base Part Number

IXG*40N60

Mount

Through Hole

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2010

Pin Count

4

JEDEC-95 Code

TO-268

Turn On Time

38 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

75A

Reverse Recovery Time

25 ns

JESD-30 Code

R-PSIP-T3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

PT

Gate Charge

95nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

18ns/90ns

Switching Energy

200μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

IXYS IXGK120N60B

In stock

SKU: IXGK120N60B-9
Manufacturer

IXYS

Base Part Number

IXG*120N60

Package / Case

TO-264-3, TO-264AA

Number of Pins

3

Weight

10.000011g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 100A, 2.4 Ω, 15V

Packaging

Tube

Published

2004

Operating Temperature

-55°C~150°C TJ

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

660W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 120A

Turn Off Time-Nom (toff)

540 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

660W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

200A

Turn On Time

120 ns

Qualification Status

Not Qualified

Pin Count

3

IGBT Type

PT

Gate Charge

350nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

60ns/200ns

Switching Energy

2.4mJ (on), 5.5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

280ns

Element Configuration

Single

RoHS Status

RoHS Compliant