Showing 1765–1776 of 3680 results
Transistors - IGBTs - Single
IXYS IXGP12N60CD1
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 12A, 18 Ω, 15V |
Pin Count |
3 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2002 |
Series |
HiPerFAST™, Lightspeed™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
100W |
Base Part Number |
IXG*12N60 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
40 ns |
Case Connection |
COLLECTOR |
Power - Max |
100W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
24A |
Reverse Recovery Time |
35ns |
JEDEC-95 Code |
TO-220AB |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
Turn Off Time-Nom (toff) |
170 ns |
Element Configuration |
Single |
Gate Charge |
32nC |
Current - Collector Pulsed (Icm) |
48A |
Td (on/off) @ 25°C |
20ns/60ns |
Switching Energy |
90μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Radiation Hardening |
No |
Input Type |
Standard |
RoHS Status |
RoHS Compliant |
IXYS IXGP16N60B2D1
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Package / Case |
TO-220-3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 12A, 22 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Pin Count |
3 |
Published |
2010 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Pure Tin (Sn) |
Max Power Dissipation |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*16N60 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
JEDEC-95 Code |
TO-220AB |
Qualification Status |
Not Qualified |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
30ns |
Turn On Time |
43 ns |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 12A |
JESD-30 Code |
R-PSFM-T3 |
Turn Off Time-Nom (toff) |
280 ns |
IGBT Type |
PT |
Gate Charge |
24nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
18ns/73ns |
Switching Energy |
160μJ (on), 120μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Element Configuration |
Single |
RoHS Status |
RoHS Compliant |
IXYS IXGP16N60C2
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Package / Case |
TO-220-3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 12A, 22 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Base Part Number |
IXG*16N60 |
Published |
2010 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
PURE TIN |
Max Power Dissipation |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
JEDEC-95 Code |
TO-220AB |
JESD-30 Code |
R-PSFM-T3 |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Turn On Time |
43 ns |
Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 12A |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
190 ns |
IGBT Type |
PT |
Gate Charge |
25nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
16ns/75ns |
Switching Energy |
160μJ (on), 90μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Qualification Status |
Not Qualified |
RoHS Status |
RoHS Compliant |
IXYS IXGP20N120
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
800V, 20A, 47 Ω, 15V |
Base Part Number |
IXG*20N120 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2002 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Turn On Time |
57 ns |
Qualification Status |
Not Qualified |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
40A |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Turn Off Time-Nom (toff) |
1250 ns |
Pin Count |
3 |
IGBT Type |
PT |
Gate Charge |
63nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
28ns/400ns |
Switching Energy |
6.5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
700ns |
Element Configuration |
Single |
RoHS Status |
ROHS3 Compliant |
IXYS IXGP20N120A3
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*20N120 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
290 ns |
Packaging |
Tube |
Published |
2009 |
Operating Temperature |
-55°C~150°C TJ |
Series |
GenX3™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
180W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
26 Weeks |
Turn On Time |
66 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Power Dissipation |
180W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
16 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
40A |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Qualification Status |
Not Qualified |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
1530 ns |
IGBT Type |
PT |
Gate Charge |
50nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
16ns/290ns |
Switching Energy |
2.85mJ (on), 6.47mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
IXYS IXGP20N120B
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 20A, 10 Ω, 15V |
Packaging |
Tube |
Published |
2004 |
Operating Temperature |
-55°C~150°C TJ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
190W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Max Collector Current |
40A |
JEDEC-95 Code |
TO-220AB |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
190W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Pin Count |
3 |
Base Part Number |
IXG*20N120 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
35 ns |
Vce(on) (Max) @ Vge, Ic |
3.4V @ 15V, 20A |
Turn Off Time-Nom (toff) |
790 ns |
Gate Charge |
72nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
25ns/150ns |
Switching Energy |
2.1mJ (off) |
JESD-30 Code |
R-PSFM-T3 |
RoHS Status |
ROHS3 Compliant |
IXYS IXGP20N60B
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*20N60 |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 20A, 10 Ω, 15V |
Packaging |
Tube |
Published |
2000 |
Operating Temperature |
-55°C~150°C TJ |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
15 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
JEDEC-95 Code |
TO-220AB |
Qualification Status |
Not Qualified |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
220 ns |
Gate Charge |
90nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
15ns/150ns |
Switching Energy |
150μJ (on), 700μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
150ns |
Element Configuration |
Single |
RoHS Status |
RoHS Compliant |
IXYS IXGP24N60C
In stock
Manufacturer |
IXYS |
---|---|
Published |
2002 |
Package / Case |
TO-220-3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 24A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Packaging |
Tube |
Series |
HiPerFAST™, Lightspeed™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
150W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Collector Emitter Voltage (VCEO) |
2.5V |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Max Collector Current |
48A |
JEDEC-95 Code |
TO-220AB |
Base Part Number |
IXG*24N60 |
Turn On Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 24A |
Turn Off Time-Nom (toff) |
240 ns |
Gate Charge |
55nC |
Current - Collector Pulsed (Icm) |
96A |
Td (on/off) @ 25°C |
15ns/75ns |
Switching Energy |
240μJ (off) |
JESD-30 Code |
R-PSFM-T3 |
RoHS Status |
RoHS Compliant |
IXYS IXGP24N60C4D1
In stock
Manufacturer |
IXYS |
---|---|
Pbfree Code |
yes |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
360V, 24A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2011 |
Pin Count |
3 |
JESD-609 Code |
e1 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
ULTRA FAST |
Max Power Dissipation |
190W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
JEDEC-95 Code |
TO-220AB |
Qualification Status |
Not Qualified |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
190W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.7V |
Max Collector Current |
56A |
Reverse Recovery Time |
30 ns |
Turn On Time |
52 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 24A |
JESD-30 Code |
R-PSFM-T3 |
Turn Off Time-Nom (toff) |
263 ns |
IGBT Type |
PT |
Gate Charge |
64nC |
Current - Collector Pulsed (Icm) |
130A |
Td (on/off) @ 25°C |
22ns/192ns |
Switching Energy |
350μJ (on), 340μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
RoHS Status |
RoHS Compliant |
IXYS IXGP28N120B
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 28A, 5 Ω, 15V |
Packaging |
Tube |
Published |
2004 |
Operating Temperature |
-55°C~150°C TJ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Max Collector Current |
50A |
JEDEC-95 Code |
TO-220AB |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Pin Count |
3 |
Base Part Number |
IXG*28N120 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
63 ns |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 28A |
Turn Off Time-Nom (toff) |
550 ns |
Gate Charge |
92nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
30ns/180ns |
Switching Energy |
2mJ (off) |
JESD-30 Code |
R-PSFM-T3 |
RoHS Status |
ROHS3 Compliant |
IXYS IXGP2N100
In stock
Manufacturer |
IXYS |
---|---|
Published |
2000 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1kV |
Number of Elements |
1 |
Test Conditions |
800V, 2A, 150 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
25W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
6 Weeks |
JEDEC-95 Code |
TO-220AB |
JESD-30 Code |
R-PSFM-T3 |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
25W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1kV |
Max Collector Current |
4A |
Voltage - Collector Emitter Breakdown (Max) |
1000V |
Turn On Time |
100 ns |
Pin Count |
3 |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 2A |
Turn Off Time-Nom (toff) |
100 ns |
Gate Charge |
7.8nC |
Current - Collector Pulsed (Icm) |
8A |
Td (on/off) @ 25°C |
15ns/300ns |
Switching Energy |
560μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
8V |
Qualification Status |
Not Qualified |
RoHS Status |
ROHS3 Compliant |
IXYS IXGP2N100A
In stock
Manufacturer |
IXYS |
---|---|
Published |
2000 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1kV |
Test Conditions |
800V, 2A, 150 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
6 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
25W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tube |
Pin Count |
3 |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
1000V |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
25W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1kV |
Max Collector Current |
4A |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Turn On Time |
100 ns |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 2A |
Turn Off Time-Nom (toff) |
100 ns |
Gate Charge |
7.8nC |
Current - Collector Pulsed (Icm) |
8A |
Td (on/off) @ 25°C |
15ns/300ns |
Switching Energy |
260μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
8V |
RoHS Status |
ROHS3 Compliant |