Showing 1777–1788 of 3680 results
IXYS IXGP30N60B4D1
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2013 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 24A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Qualification Status |
Not Qualified |
| Mount |
Through Hole |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
190W |
| Terminal Position |
SINGLE |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Packaging |
Tube |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Turn On Time |
53 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 24A |
| Power - Max |
190W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7V |
| Max Collector Current |
56A |
| Reverse Recovery Time |
30 ns |
| JEDEC-95 Code |
TO-220AB |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
511 ns |
| IGBT Type |
PT |
| Gate Charge |
77nC |
| Current - Collector Pulsed (Icm) |
156A |
| Td (on/off) @ 25°C |
21ns/200ns |
| Switching Energy |
440μJ (on), 700μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
RoHS Compliant |
IXYS IXGP30N60C3D4
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
GenX3™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Weight |
2.299997g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
300V, 20A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Base Part Number |
IXG*30N60 |
| Published |
2011 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation |
220W |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| JEDEC-95 Code |
TO-220AB |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
220W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
60 ns |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 20A |
| Pin Count |
3 |
| Turn Off Time-Nom (toff) |
160 ns |
| IGBT Type |
PT |
| Gate Charge |
38nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
16ns/42ns |
| Switching Energy |
270μJ (on), 90μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXGP36N60A3
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
GenX3™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Pin Count |
3 |
| Factory Lead Time |
26 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Published |
2013 |
| JESD-30 Code |
R-PSFM-T3 |
| Power Dissipation-Max (Abs) |
220W |
| Turn On Time |
43 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
220W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
23ns |
| JEDEC-95 Code |
TO-220AB |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
1000 ns |
| IGBT Type |
PT |
| Gate Charge |
80nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
18ns/330ns |
| Switching Energy |
740μJ (on), 3mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| RoHS Status |
Non-RoHS Compliant |
IXYS IXGP42N30C3
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
GenX3™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
300V |
| Number of Elements |
1 |
| Test Conditions |
200V, 21A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
223W |
| Terminal Position |
SINGLE |
| Published |
2008 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn On Time |
43 ns |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 42A |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.85V |
| Max Collector Current |
42A |
| JEDEC-95 Code |
TO-220AB |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Turn Off Time-Nom (toff) |
229 ns |
| IGBT Type |
PT |
| Gate Charge |
76nC |
| Current - Collector Pulsed (Icm) |
250A |
| Td (on/off) @ 25°C |
21ns/113ns |
| Switching Energy |
120μJ (on), 150μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
120ns |
| RoHS Status |
ROHS3 Compliant |
IXYS IXGP48N60A3
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-30 Code |
R-PSFM-T3 |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
120A |
| Number of Elements |
1 |
| Test Conditions |
480V, 32A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Series |
GenX3™ |
| Part Status |
Active |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Turn On Time |
54 ns |
| Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 32A |
| Input Type |
Standard |
| Power - Max |
300W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
30ns |
| JEDEC-95 Code |
TO-220AB |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Power Dissipation-Max (Abs) |
300W |
| Configuration |
SINGLE |
| Qualification Status |
Not Qualified |
| Turn Off Time-Nom (toff) |
925 ns |
| IGBT Type |
PT |
| Gate Charge |
110nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
25ns/334ns |
| Switching Energy |
950μJ (on), 2.9mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Case Connection |
COLLECTOR |
| RoHS Status |
Non-RoHS Compliant |
IXYS IXGP48N60C3
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
GenX3™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Base Part Number |
IXG*48N60 |
| Factory Lead Time |
26 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
300W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Published |
2009 |
| Pin Count |
3 |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
| Element Configuration |
Single |
| Power Dissipation |
300W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.5V |
| Max Collector Current |
75A |
| JEDEC-95 Code |
TO-220AB |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Turn Off Time-Nom (toff) |
187 ns |
| IGBT Type |
PT |
| Gate Charge |
77nC |
| Current - Collector Pulsed (Icm) |
250A |
| Td (on/off) @ 25°C |
19ns/60ns |
| Switching Energy |
410μJ (on), 230μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXGP50N33TBM-A
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Weight |
2.299997g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
330V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
50W |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.6V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
50W |
| Transistor Application |
POWER CONTROL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Max Collector Current |
30A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 25A |
| Turn Off Time-Nom (toff) |
344 ns |
| IGBT Type |
Trench |
| Gate Charge |
42nC |
| RoHS Status |
RoHS Compliant |
IXYS IXGP50N60C4
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2011 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 36A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Qualification Status |
Not Qualified |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
300W |
| Terminal Position |
SINGLE |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 36A |
| Case Connection |
COLLECTOR |
| Power - Max |
300W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.3V |
| Max Collector Current |
90A |
| Turn On Time |
75 ns |
| Turn Off Time-Nom (toff) |
306 ns |
| IGBT Type |
PT |
| Configuration |
SINGLE |
| Gate Charge |
113nC |
| Current - Collector Pulsed (Icm) |
220A |
| Td (on/off) @ 25°C |
40ns/270ns |
| Switching Energy |
950μJ (on), 840μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Input Type |
Standard |
| RoHS Status |
RoHS Compliant |
IXYS IXGP70N33TBM-A
In stock
| Manufacturer |
IXYS |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Weight |
2.299997g |
| Collector-Emitter Breakdown Voltage |
330V |
| Packaging |
Tube |
| Published |
2001 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
330V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXGP7N60BD1
In stock
| Manufacturer |
IXYS |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Weight |
2.299997g |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
14A |
| Test Conditions |
480V, 7A, 18Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Series |
HiPerFAST™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
80W |
| Base Part Number |
IXG*7N60 |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
80W |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
35 ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 7A |
| Gate Charge |
25nC |
| Current - Collector Pulsed (Icm) |
56A |
| Td (on/off) @ 25°C |
10ns/100ns |
| Switching Energy |
300μJ (off) |
| RoHS Status |
RoHS Compliant |
IXYS IXGP7N60C
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
35 |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
2.299997g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 7A, 22 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2003 |
| Series |
HiPerFAST™, Lightspeed™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
54W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 7A |
| Turn Off Time-Nom (toff) |
205 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
54W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
14A |
| Turn On Time |
25 ns |
| Pin Count |
4 |
| Base Part Number |
IXG*7N60 |
| Gate Charge |
25nC |
| Current - Collector Pulsed (Icm) |
30A |
| Td (on/off) @ 25°C |
9ns/65ns |
| Switching Energy |
70μJ (on), 120μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Height |
9.15mm |
| Length |
10.66mm |
| Width |
4.82mm |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
IXYS IXGP7N60CD1
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
2.299997g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 7A, 18 Ω, 15V |
| Base Part Number |
IXG*7N60 |
| Mount |
Through Hole |
| Published |
2003 |
| Series |
HiPerFAST™, Lightspeed™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
75W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
25 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
75W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
35 ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 7A |
| Turn Off Time-Nom (toff) |
205 ns |
| Gate Charge |
25nC |
| Current - Collector Pulsed (Icm) |
30A |
| Td (on/off) @ 25°C |
10ns/65ns |
| Switching Energy |
120μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Fall Time-Max (tf) |
110ns |
| RoHS Status |
RoHS Compliant |