Showing 1801–1812 of 3680 results
Transistors - IGBTs - Single
IXYS IXGQ50N60B4D1
In stock
Manufacturer |
IXYS |
---|---|
Qualification Status |
Not Qualified |
Package / Case |
TO-3P-3, SC-65-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 36A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2011 |
Part Status |
Obsolete |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
300W |
Reach Compliance Code |
unknown |
Pin Count |
2 |
JESD-30 Code |
R-PSFM-T3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 36A |
Turn Off Time-Nom (toff) |
500 ns |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
100A |
Reverse Recovery Time |
25 ns |
Turn On Time |
76 ns |
Power Dissipation |
300W |
Element Configuration |
Single |
IGBT Type |
PT |
Gate Charge |
110nC |
Current - Collector Pulsed (Icm) |
230A |
Td (on/off) @ 25°C |
37ns/330ns |
Switching Energy |
930μJ (on), 1mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Case Connection |
COLLECTOR |
RoHS Status |
RoHS Compliant |
IXYS IXGQ50N60C4D1
In stock
Manufacturer |
IXYS |
---|---|
Qualification Status |
Not Qualified |
Package / Case |
TO-3P-3, SC-65-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 36A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2011 |
Part Status |
Obsolete |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
300W |
Terminal Position |
SINGLE |
Reach Compliance Code |
unknown |
Pin Count |
2 |
JESD-30 Code |
R-PSFM-T3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 36A |
Turn Off Time-Nom (toff) |
306 ns |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.3V |
Max Collector Current |
90A |
Reverse Recovery Time |
25 ns |
Turn On Time |
75 ns |
Case Connection |
COLLECTOR |
Configuration |
SINGLE WITH BUILT-IN DIODE |
IGBT Type |
PT |
Gate Charge |
113nC |
Current - Collector Pulsed (Icm) |
220A |
Td (on/off) @ 25°C |
40ns/270ns |
Switching Energy |
950μJ (on), 840μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Input Type |
Standard |
RoHS Status |
RoHS Compliant |
IXYS IXGQ85N33PCD1
In stock
Manufacturer |
IXYS |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Number of Pins |
3 |
Weight |
5.500006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
330V |
Number of Terminations |
3 |
Factory Lead Time |
26 Weeks |
Packaging |
Tube |
Published |
2007 |
Series |
Polar™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Elements |
1 |
Terminal Finish |
Matte Tin (Sn) |
Transistor Application |
GENERAL PURPOSE SWITCHING |
Polarity/Channel Type |
N-CHANNEL |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
150W |
Max Power Dissipation |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
330V |
Max Collector Current |
85A |
Reverse Recovery Time |
250 ns |
Turn On Time |
115 ns |
Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 100A |
Turn Off Time-Nom (toff) |
218 ns |
Gate Charge |
80nC |
RoHS Status |
ROHS3 Compliant |
IXYS IXGQ90N27PB
In stock
Manufacturer |
IXYS |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Number of Pins |
3 |
Weight |
5.500006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
270V |
ECCN Code |
EAR99 |
Factory Lead Time |
16 Weeks |
Packaging |
Tube |
Published |
2007 |
Series |
Polar™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Number of Elements |
1 |
Terminal Finish |
Matte Tin (Sn) |
Input Type |
Standard |
Power - Max |
150W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
150W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
270V |
Max Collector Current |
90A |
Turn On Time |
89 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
Turn Off Time-Nom (toff) |
428 ns |
Gate Charge |
79nC |
RoHS Status |
ROHS3 Compliant |
IXYS IXGQ90N33TC
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*90N33 |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Weight |
5.500006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
330V |
Number of Elements |
1 |
Packaging |
Tube |
Published |
2011 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Mount |
Through Hole |
JESD-30 Code |
R-PSFM-T3 |
Pin Count |
2 |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
90A |
Turn On Time |
41 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 45A |
Turn Off Time-Nom (toff) |
124 ns |
IGBT Type |
Trench |
Gate Charge |
69nC |
RoHS Status |
RoHS Compliant |
IXYS IXGQ90N33TCD1
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*90N33 |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Weight |
5.500006g |
Collector-Emitter Breakdown Voltage |
330V |
Number of Elements |
1 |
Packaging |
Tube |
Published |
2016 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
200W |
Mount |
Through Hole |
JESD-30 Code |
R-PSFM-T3 |
Pin Count |
2 |
Element Configuration |
Single |
Power Dissipation |
200W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
90A |
Turn On Time |
41 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 45A |
Turn Off Time-Nom (toff) |
124 ns |
IGBT Type |
Trench |
Gate Charge |
69nC |
RoHS Status |
RoHS Compliant |
IXYS IXGQ96N30TCD1
In stock
Manufacturer |
IXYS |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Weight |
5.500006g |
Collector-Emitter Breakdown Voltage |
320V |
Current-Collector (Ic) (Max) |
96A |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Type |
Standard |
Max Collector Current |
96A |
IGBT Type |
Trench |
RoHS Status |
ROHS3 Compliant |
IXYS IXGR120N60B
In stock
Manufacturer |
IXYS |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS247™ |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 100A, 2.4 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
520W |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
156A |
JESD-30 Code |
R-PSIP-T3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
520W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*120N60 |
Pin Count |
3 |
Turn On Time |
120 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Turn Off Time-Nom (toff) |
540 ns |
IGBT Type |
PT |
Gate Charge |
350nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
60ns/200ns |
Switching Energy |
2.4mJ (on), 5.5mJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXGR120N60C2
In stock
Manufacturer |
IXYS |
---|---|
Base Part Number |
IXG*120N60 |
Package / Case |
ISOPLUS247™ |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 80A, 1 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2005 |
Series |
HiPerFAST™, Lightspeed 2™ |
Packaging |
Tube |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
300W |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
100 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 100A |
Element Configuration |
Single |
Power Dissipation |
300W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
45ns |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
JESD-30 Code |
R-PSFM-T3 |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
257 ns |
IGBT Type |
PT |
Gate Charge |
370nC |
Current - Collector Pulsed (Icm) |
500A |
Td (on/off) @ 25°C |
40ns/120ns |
Switching Energy |
1.7mJ (on), 1mJ (off) |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
Polarity |
NPN |
RoHS Status |
RoHS Compliant |
IXYS IXGR12N60C
In stock
Manufacturer |
IXYS |
---|---|
Published |
2002 |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS247™ |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 12A, 18 Ω, 15V |
Operating Temperature |
-40°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
55W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tube |
Base Part Number |
IXG*12N60 |
Max Collector Current |
15A |
Turn On Time |
40 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
55W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
3 |
JESD-30 Code |
R-PSIP-T3 |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
Turn Off Time-Nom (toff) |
170 ns |
Gate Charge |
32nC |
Current - Collector Pulsed (Icm) |
48A |
Td (on/off) @ 25°C |
20ns/60ns |
Switching Energy |
90μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
180ns |
RoHS Status |
RoHS Compliant |
IXYS IXGR24N60C
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
ISOPLUS247™ |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 24A, 18 Ω, 15V |
Operating Temperature |
-40°C~150°C TJ |
Published |
2002 |
Series |
HiPerFAST™ |
Packaging |
Tube |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
80W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Max Collector Current |
42A |
Turn On Time |
27 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
80W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
3 |
Base Part Number |
IXG*24N60 |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 24A |
Turn Off Time-Nom (toff) |
240 ns |
Gate Charge |
55nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
15ns/75ns |
Switching Energy |
240μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
JESD-30 Code |
R-PSIP-T3 |
RoHS Status |
RoHS Compliant |
IXYS IXGR32N170AH1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2004 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS247™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Test Conditions |
1360V, 21A, 2.7 Ω, 15V |
Turn Off Delay Time |
270 ns |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
UL RECOGNIZED |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Bulk |
Base Part Number |
IXG*32N170 |
Reverse Recovery Time |
150 ns |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Polarity |
NPN |
Element Configuration |
Single |
Power Dissipation |
200W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Turn On Delay Time |
46 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
50ns |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
26A |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Turn On Time |
107 ns |
Vce(on) (Max) @ Vge, Ic |
5.2V @ 15V, 21A |
Turn Off Time-Nom (toff) |
370 ns |
IGBT Type |
NPT |
Gate Charge |
155nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
46ns/260ns |
Switching Energy |
1.5mJ (off) |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |