Showing 1825–1836 of 3680 results

Transistors - IGBTs - Single

IXYS IXGR40N60C2

In stock

SKU: IXGR40N60C2-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 30A, 3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

HiPerFAST™

JESD-609 Code

e1

Published

2005

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

170W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

56A

Turn On Time

38 ns

Polarity

NPN

Element Configuration

Single

Power Dissipation

170W

Case Connection

ISOLATED

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

32ns

Collector Emitter Voltage (VCEO)

600V

Pin Count

3

Base Part Number

IXG*40N60

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

PT

Gate Charge

95nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

18ns/90ns

Switching Energy

200μJ (off)

REACH SVHC

No SVHC

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

IXYS IXGR40N60C2D1

In stock

SKU: IXGR40N60C2D1-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Weight

5.3g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 3 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Published

2005

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

170W

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

56A

Reverse Recovery Time

25 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

ISOLATED

Input Type

Standard

Power - Max

170W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Base Part Number

IXG*40N60

Pin Count

3

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

PT

Gate Charge

95nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

18ns/90ns

Switching Energy

200μJ (off)

RoHS Status

RoHS Compliant

Lead Free

Lead Free

IXYS IXGR40N60CD1

In stock

SKU: IXGR40N60CD1-9
Manufacturer

IXYS

JESD-609 Code

e1

Package / Case

ISOPLUS247™

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

480V, 40A, 4.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2004

Pin Count

3

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*40N60

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

60 ns

Qualification Status

Not Qualified

Case Connection

ISOLATED

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Reverse Recovery Time

3.5 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Turn Off Time-Nom (toff)

255 ns

JESD-30 Code

R-PSFM-T3

IGBT Type

PT

Gate Charge

116nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

25ns/100ns

Switching Energy

850μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

Element Configuration

Single

RoHS Status

RoHS Compliant

IXYS IXGR48N60B3D4A

In stock

SKU: IXGR48N60B3D4A-9
Manufacturer

IXYS

Factory Lead Time

30 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Collector-Emitter Breakdown Voltage

600V

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Base Part Number

IXG*48N60

Input Type

Standard

RoHS Status

ROHS3 Compliant

IXYS IXGR50N160H1

In stock

SKU: IXGR50N160H1-9
Manufacturer

IXYS

Pbfree Code

yes

Package / Case

ISOPLUS247™

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.6kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2009

Pin Count

3

JESD-609 Code

e1

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

240W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

230 ns

Qualification Status

Not Qualified

Case Connection

ISOLATED

Input Type

Standard

Power - Max

240W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.3V

Max Collector Current

75A

Voltage - Collector Emitter Breakdown (Max)

1600V

Turn On Time

192 ns

JESD-30 Code

R-PSIP-T3

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Turn Off Time-Nom (toff)

4840 ns

IGBT Type

NPT

Gate Charge

137nC

Current - Collector Pulsed (Icm)

330A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Status

RoHS Compliant

IXYS IXGR50N60B

In stock

SKU: IXGR50N60B-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

ISOPLUS247™

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 2.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2004

Series

HiPerFAST™

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

75A

Turn On Time

110 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

ISOLATED

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Pin Count

3

Base Part Number

IXG*50N60

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Turn Off Time-Nom (toff)

375 ns

Gate Charge

110nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/110ns

Switching Energy

3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

JESD-30 Code

R-PSIP-T3

RoHS Status

RoHS Compliant

IXYS IXGR50N60B2

In stock

SKU: IXGR50N60B2-9
Manufacturer

IXYS

Published

2004

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

200W

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

68A

JESD-30 Code

R-PSIP-T3

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

ISOLATED

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXG*50N60

Pin Count

3

Reverse Recovery Time

35 ns

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Turn Off Time-Nom (toff)

430 ns

Gate Charge

140nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

18ns/190ns

Switching Energy

550μJ (off)

RoHS Status

RoHS Compliant

IXYS IXGR50N60BD1

In stock

SKU: IXGR50N60BD1-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 2.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2004

Series

HiPerFAST™

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

35 ns

Turn On Time

110 ns

Element Configuration

Single

Case Connection

ISOLATED

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Pin Count

3

Base Part Number

IXG*50N60

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Turn Off Time-Nom (toff)

375 ns

Gate Charge

110nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/110ns

Switching Energy

3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

IXYS IXGR50N60C2D1

In stock

SKU: IXGR50N60C2D1-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

ISOPLUS247™

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 2 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2013

Series

HiPerFAST™

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

75A

Reverse Recovery Time

35 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

ISOLATED

Input Type

Standard

Power - Max

200W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Pin Count

3

Base Part Number

IXG*50N60

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Turn Off Time-Nom (toff)

230 ns

IGBT Type

PT

Gate Charge

138nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

18ns/115ns

Switching Energy

380μJ (off)

JESD-30 Code

R-PSIP-T3

RoHS Status

RoHS Compliant

IXYS IXGR60N60B2

In stock

SKU: IXGR60N60B2-9
Manufacturer

IXYS

Published

2004

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 3.3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

250W

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Qualification Status

Not Qualified

Polarity

NPN

Element Configuration

Single

Power Dissipation

250W

Case Connection

ISOLATED

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

100ns

Base Part Number

IXG*60N60

Pin Count

3

Turn On Time

64 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 50A

Turn Off Time-Nom (toff)

550 ns

IGBT Type

PT

Gate Charge

170nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

28ns/160ns

Switching Energy

1mJ (off)

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

IXYS IXGR60N60C2

In stock

SKU: IXGR60N60C2-9
Manufacturer

IXYS

Series

HiPerFAST™

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 2 Ω, 15V

Turn Off Delay Time

130 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2004

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

75A

Pin Count

3

Polarity

NPN

Element Configuration

Single

Power Dissipation

250W

Case Connection

ISOLATED

Input Type

Standard

Turn On Delay Time

18 ns

Transistor Application

POWER CONTROL

Rise Time

35ns

Collector Emitter Voltage (VCEO)

600V

Reverse Recovery Time

35 ns

Turn On Time

43 ns

Base Part Number

IXG*60N60

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

PT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

18ns/95ns

Switching Energy

490μJ (off)

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

IXYS IXGR60N60C2D1

In stock

SKU: IXGR60N60C2D1-9
Manufacturer

IXYS

Series

HiPerFAST™

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 2 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2004

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

75A

Pin Count

3

Polarity

NPN

Element Configuration

Single

Power Dissipation

250W

Case Connection

ISOLATED

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

35ns

Collector Emitter Voltage (VCEO)

600V

Reverse Recovery Time

35 ns

Turn On Time

43 ns

Base Part Number

IXG*60N60

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

PT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

18ns/95ns

Switching Energy

490μJ (off)

REACH SVHC

No SVHC

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant