Showing 1825–1836 of 3680 results
Transistors - IGBTs - Single
IXYS IXGR40N60C2
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
ISOPLUS247™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 30A, 3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Published |
2005 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
170W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Max Collector Current |
56A |
Turn On Time |
38 ns |
Polarity |
NPN |
Element Configuration |
Single |
Power Dissipation |
170W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
32ns |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
3 |
Base Part Number |
IXG*40N60 |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 30A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
PT |
Gate Charge |
95nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/90ns |
Switching Energy |
200μJ (off) |
REACH SVHC |
No SVHC |
Qualification Status |
Not Qualified |
RoHS Status |
RoHS Compliant |
IXYS IXGR40N60C2D1
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS247™ |
Number of Pins |
3 |
Weight |
5.3g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 3 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Published |
2005 |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
170W |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
56A |
Reverse Recovery Time |
25 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
170W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Base Part Number |
IXG*40N60 |
Pin Count |
3 |
Turn On Time |
38 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 30A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
PT |
Gate Charge |
95nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/90ns |
Switching Energy |
200μJ (off) |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
IXYS IXGR40N60CD1
In stock
Manufacturer |
IXYS |
---|---|
JESD-609 Code |
e1 |
Package / Case |
ISOPLUS247™ |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
480V, 40A, 4.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2004 |
Pin Count |
3 |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*40N60 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
60 ns |
Qualification Status |
Not Qualified |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Reverse Recovery Time |
3.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 40A |
Turn Off Time-Nom (toff) |
255 ns |
JESD-30 Code |
R-PSFM-T3 |
IGBT Type |
PT |
Gate Charge |
116nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
25ns/100ns |
Switching Energy |
850μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
150ns |
Element Configuration |
Single |
RoHS Status |
RoHS Compliant |
IXYS IXGR48N60B3D4A
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
30 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS247™ |
Collector-Emitter Breakdown Voltage |
600V |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
IXG*48N60 |
Input Type |
Standard |
RoHS Status |
ROHS3 Compliant |
IXYS IXGR50N160H1
In stock
Manufacturer |
IXYS |
---|---|
Pbfree Code |
yes |
Package / Case |
ISOPLUS247™ |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.6kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2009 |
Pin Count |
3 |
JESD-609 Code |
e1 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
240W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Reverse Recovery Time |
230 ns |
Qualification Status |
Not Qualified |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
240W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.3V |
Max Collector Current |
75A |
Voltage - Collector Emitter Breakdown (Max) |
1600V |
Turn On Time |
192 ns |
JESD-30 Code |
R-PSIP-T3 |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 50A |
Turn Off Time-Nom (toff) |
4840 ns |
IGBT Type |
NPT |
Gate Charge |
137nC |
Current - Collector Pulsed (Icm) |
330A |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
RoHS Status |
RoHS Compliant |
IXYS IXGR50N60B
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
ISOPLUS247™ |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 50A, 2.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2004 |
Series |
HiPerFAST™ |
Packaging |
Tube |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Max Collector Current |
75A |
Turn On Time |
110 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
3 |
Base Part Number |
IXG*50N60 |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 50A |
Turn Off Time-Nom (toff) |
375 ns |
Gate Charge |
110nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
50ns/110ns |
Switching Energy |
3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
JESD-30 Code |
R-PSIP-T3 |
RoHS Status |
RoHS Compliant |
IXYS IXGR50N60B2
In stock
Manufacturer |
IXYS |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS247™ |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 40A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
200W |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
68A |
JESD-30 Code |
R-PSIP-T3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*50N60 |
Pin Count |
3 |
Reverse Recovery Time |
35 ns |
Turn On Time |
43 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 40A |
Turn Off Time-Nom (toff) |
430 ns |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
18ns/190ns |
Switching Energy |
550μJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXGR50N60BD1
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
ISOPLUS247™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 50A, 2.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2004 |
Series |
HiPerFAST™ |
Packaging |
Tube |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Reverse Recovery Time |
35 ns |
Turn On Time |
110 ns |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Pin Count |
3 |
Base Part Number |
IXG*50N60 |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 50A |
Turn Off Time-Nom (toff) |
375 ns |
Gate Charge |
110nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
50ns/110ns |
Switching Energy |
3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Qualification Status |
Not Qualified |
RoHS Status |
RoHS Compliant |
IXYS IXGR50N60C2D1
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
ISOPLUS247™ |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 40A, 2 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2013 |
Series |
HiPerFAST™ |
Packaging |
Tube |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
200W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Max Collector Current |
75A |
Reverse Recovery Time |
35 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
3 |
Base Part Number |
IXG*50N60 |
Turn On Time |
43 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 40A |
Turn Off Time-Nom (toff) |
230 ns |
IGBT Type |
PT |
Gate Charge |
138nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
18ns/115ns |
Switching Energy |
380μJ (off) |
JESD-30 Code |
R-PSIP-T3 |
RoHS Status |
RoHS Compliant |
IXYS IXGR60N60B2
In stock
Manufacturer |
IXYS |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 3.3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Series |
HiPerFAST™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
250W |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Qualification Status |
Not Qualified |
Polarity |
NPN |
Element Configuration |
Single |
Power Dissipation |
250W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
100ns |
Base Part Number |
IXG*60N60 |
Pin Count |
3 |
Turn On Time |
64 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
Turn Off Time-Nom (toff) |
550 ns |
IGBT Type |
PT |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
28ns/160ns |
Switching Energy |
1mJ (off) |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
IXYS IXGR60N60C2
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Package / Case |
ISOPLUS247™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 2 Ω, 15V |
Turn Off Delay Time |
130 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2004 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Max Collector Current |
75A |
Pin Count |
3 |
Polarity |
NPN |
Element Configuration |
Single |
Power Dissipation |
250W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Turn On Delay Time |
18 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
35ns |
Collector Emitter Voltage (VCEO) |
600V |
Reverse Recovery Time |
35 ns |
Turn On Time |
43 ns |
Base Part Number |
IXG*60N60 |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 50A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
PT |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
18ns/95ns |
Switching Energy |
490μJ (off) |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Qualification Status |
Not Qualified |
Lead Free |
Lead Free |
IXYS IXGR60N60C2D1
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Package / Case |
ISOPLUS247™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 2 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2004 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Max Collector Current |
75A |
Pin Count |
3 |
Polarity |
NPN |
Element Configuration |
Single |
Power Dissipation |
250W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
35ns |
Collector Emitter Voltage (VCEO) |
600V |
Reverse Recovery Time |
35 ns |
Turn On Time |
43 ns |
Base Part Number |
IXG*60N60 |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 50A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
PT |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
18ns/95ns |
Switching Energy |
490μJ (off) |
REACH SVHC |
No SVHC |
Qualification Status |
Not Qualified |
RoHS Status |
RoHS Compliant |