Showing 1837–1848 of 3680 results

Transistors - IGBTs - Single

IXYS IXGR60N60C2G1

In stock

SKU: IXGR60N60C2G1-9
Manufacturer

IXYS

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

75A

Packaging

Tube

Published

2013

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Base Part Number

IXG*60N60

Input Type

Standard

Max Collector Current

75A

RoHS Status

RoHS Compliant

IXYS IXGR60N60C3C1

In stock

SKU: IXGR60N60C3C1-9
Manufacturer

IXYS

Published

2010

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Weight

5.3g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Series

GenX3™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

170W

Terminal Position

SINGLE

Mount

Through Hole

Factory Lead Time

30 Weeks

Max Collector Current

75A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

170W

Case Connection

ISOLATED

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.5V

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Reach Compliance Code

unknown

Turn Off Time-Nom (toff)

198 ns

IGBT Type

PT

Gate Charge

115nC

Current - Collector Pulsed (Icm)

260A

Td (on/off) @ 25°C

24ns/70ns

Switching Energy

830μJ (on), 450μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

REACH SVHC

No SVHC

Base Part Number

IXG*60N60

RoHS Status

ROHS3 Compliant

IXYS IXGR60N60C3D1

In stock

SKU: IXGR60N60C3D1-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2010

Series

GenX3™

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

170W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Mount

Through Hole

Factory Lead Time

30 Weeks

Reverse Recovery Time

25 ns

Turn On Time

54 ns

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

170W

Case Connection

ISOLATED

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.5V

Max Collector Current

75A

Pin Count

3

Base Part Number

IXG*60N60

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Turn Off Time-Nom (toff)

198 ns

IGBT Type

PT

Gate Charge

115nC

Current - Collector Pulsed (Icm)

260A

Td (on/off) @ 25°C

21ns/70ns

Switching Energy

800μJ (on), 450μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

JESD-30 Code

R-PSIP-T3

RoHS Status

ROHS3 Compliant

IXYS IXGR60N60U1

In stock

SKU: IXGR60N60U1-9
Manufacturer

IXYS

Published

2000

Package / Case

ISOPLUS247™

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 60A, 2.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Base Part Number

IXG*60N60

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

FAST

Max Power Dissipation

300W

Mounting Type

Through Hole

Mount

Through Hole

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 60A

JESD-30 Code

R-PSIP-T3

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Turn On Time

50 ns

Turn Off Time-Nom (toff)

1000 ns

Gate Charge

200nC

Pin Count

3

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/600ns

Switching Energy

16mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

700ns

Radiation Hardening

No

Element Configuration

Single

RoHS Status

RoHS Compliant

IXYS IXGR72N60B3H1

In stock

SKU: IXGR72N60B3H1-9
Manufacturer

IXYS

Base Part Number

IXG*72N60

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 3 Ω, 15V

Turn Off Delay Time

152 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

GenX3™

JESD-609 Code

e1

Published

2016

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

200W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

8 Weeks

Turn On Time

63 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 60A

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

ISOLATED

Input Type

Standard

Turn On Delay Time

31 ns

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

75A

Reverse Recovery Time

140 ns

JESD-30 Code

R-PSFM-T3

Pin Count

3

Turn Off Time-Nom (toff)

370 ns

IGBT Type

PT

Gate Charge

225nC

Current - Collector Pulsed (Icm)

450A

Td (on/off) @ 25°C

31ns/152ns

Switching Energy

1.4mJ (on), 1mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

RoHS Status

ROHS3 Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

IXYS IXGT10N170

In stock

SKU: IXGT10N170-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Published

2008

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

110W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Mount

Surface Mount

Factory Lead Time

24 Weeks

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

20A

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

110W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

MOTOR CONTROL

Drain to Source Voltage (Vdss)

1.7kV

Polarity/Channel Type

N-CHANNEL

Pin Count

4

Base Part Number

IXG*10N170

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

107 ns

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 10A

Turn Off Time-Nom (toff)

240 ns

IGBT Type

NPT

Gate Charge

32nC

Current - Collector Pulsed (Icm)

70A

RoHS Status

ROHS3 Compliant

JESD-30 Code

R-PSSO-G2

Lead Free

Lead Free

IXYS IXGT10N170A

In stock

SKU: IXGT10N170A-9
Manufacturer

IXYS

Packaging

Tube

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

850V, 10A, 22 Ω, 15V

Turn Off Delay Time

190 ns

Base Part Number

IXG*10N170

Factory Lead Time

26 Weeks

Published

2003

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

140W

Terminal Form

GULL WING

Operating Temperature

-55°C~150°C TJ

Pin Count

4

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

107 ns

Power Dissipation

140W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

46 ns

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

10A

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 5A

Turn Off Time-Nom (toff)

240 ns

IGBT Type

NPT

Gate Charge

29nC

Current - Collector Pulsed (Icm)

20A

Td (on/off) @ 25°C

46ns/190ns

Switching Energy

380μJ (off)

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXGT15N120B

In stock

SKU: IXGT15N120B-9
Manufacturer

IXYS

Series

HiPerFAST™

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 15A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

8 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Additional Feature

LOW SWITCHING LOSSES

Max Power Dissipation

180W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2003

Base Part Number

IXG*15N120

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

43 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

180W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

30A

Pin Count

4

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 15A

Turn Off Time-Nom (toff)

660 ns

IGBT Type

PT

Gate Charge

69nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

25ns/180ns

Switching Energy

1.75mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

320ns

RoHS Status

ROHS3 Compliant

IXYS IXGT15N120C

In stock

SKU: IXGT15N120C-9
Manufacturer

IXYS

Pbfree Code

no

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 15A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2000

Series

Lightspeed™

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Surface Mount

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Tin/Lead (Sn/Pb)

Additional Feature

LOW SWITCHING LOSSES

Max Power Dissipation

150W

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JESD-609 Code

e0

Base Part Number

IXG*15N120

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

43 ns

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.8V

Max Collector Current

30A

Pin Count

3

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

3.8V @ 15V, 15A

Turn Off Time-Nom (toff)

470 ns

Gate Charge

69nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

25ns/150ns

Switching Energy

1.05mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

190ns

RoHS Status

RoHS Compliant

IXYS IXGT16N170

In stock

SKU: IXGT16N170-9
Manufacturer

IXYS

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

1360V, 16A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Base Part Number

IXG*16N170

Factory Lead Time

24 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

190W

Terminal Form

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2006

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

90 ns

Element Configuration

Single

Power Dissipation

190W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

32A

JEDEC-95 Code

TO-247AD

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 16A

Turn Off Time-Nom (toff)

1600 ns

IGBT Type

NPT

Gate Charge

78nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

45ns/400ns

Switching Energy

9.3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

1100ns

RoHS Status

ROHS3 Compliant

IXYS IXGT16N170A

In stock

SKU: IXGT16N170A-9
Manufacturer

IXYS

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

850V, 16A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Base Part Number

IXG*16N170

Factory Lead Time

26 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

190W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2014

Pin Count

4

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

97 ns

Element Configuration

Single

Power Dissipation

190W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

16A

Reverse Recovery Time

230 ns

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

5V @ 15V, 11A

Turn Off Time-Nom (toff)

330 ns

IGBT Type

NPT

Gate Charge

65nC

Current - Collector Pulsed (Icm)

40A

Td (on/off) @ 25°C

36ns/160ns

Switching Energy

900μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

RoHS Status

ROHS3 Compliant

IXYS IXGT20N120

In stock

SKU: IXGT20N120-9
Manufacturer

IXYS

Reach Compliance Code

not_compliant

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 20A, 47 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2002

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

150W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Surface Mount

Factory Lead Time

8 Weeks

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

40A

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXG*20N120

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

57 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Turn Off Time-Nom (toff)

1250 ns

Gate Charge

63nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

28ns/400ns

Switching Energy

6.5mJ (off)

Pin Count

4

RoHS Status

ROHS3 Compliant