Showing 1849–1860 of 3680 results
IXYS IXGT20N120B
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-268-3 |
| Weight |
4.500005g |
| Number of Elements |
1 |
| Packaging |
Box |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Power Dissipation-Max |
190W |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
40A |
| JEDEC-95 Code |
TO-268AA |
| Collector Emitter Breakdown Voltage |
1.2kV |
| Collector Emitter Saturation Voltage |
3.4V |
| Turn On Time |
43 ns |
| Turn Off Time-Nom (toff) |
630 ns |
| RoHS Status |
RoHS Compliant |
IXYS IXGT20N140C3H1
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.4kV |
| Number of Elements |
1 |
| Test Conditions |
700V, 20A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Series |
GenX3™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
ULTRA FAST |
| Max Power Dissipation |
250W |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Voltage - Collector Emitter Breakdown (Max) |
1400V |
| Turn On Time |
35 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
250W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
5V |
| Max Collector Current |
42A |
| Reverse Recovery Time |
70 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Vce(on) (Max) @ Vge, Ic |
5V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
524 ns |
| IGBT Type |
PT |
| Gate Charge |
88nC |
| Current - Collector Pulsed (Icm) |
108A |
| Td (on/off) @ 25°C |
19ns/110ns |
| Switching Energy |
1.35mJ (on), 440μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
IXYS IXGT20N60B
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFAST™ |
| Number of Pins |
3 |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Max Collector Current |
40A |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
150W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Turn On Time |
50 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
| Base Part Number |
IXG*20N60 |
| Turn Off Time-Nom (toff) |
360 ns |
| Gate Charge |
90nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
15ns/150ns |
| Switching Energy |
150μJ (on), 700μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
150ns |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
RoHS Compliant |
IXYS IXGT20N60BD1
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFAST™ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2000 |
| Base Part Number |
IXG*20N60 |
| Reverse Recovery Time |
25 ns |
| Turn On Time |
15 ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
150W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
220 ns |
| Gate Charge |
55nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
15ns/110ns |
| Switching Energy |
700μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Fall Time-Max (tf) |
150ns |
| RoHS Status |
RoHS Compliant |
IXYS IXGT24N170A
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
4 |
| Mounting Type |
Surface Mount |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.7kV |
| Number of Elements |
1 |
| Test Conditions |
850V, 24A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
250W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
IXG*24N170 |
| Mount |
Surface Mount |
| Factory Lead Time |
24 Weeks |
| Vce(on) (Max) @ Vge, Ic |
6V @ 15V, 16A |
| Turn Off Time-Nom (toff) |
275 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7kV |
| Max Collector Current |
24A |
| Voltage - Collector Emitter Breakdown (Max) |
1700V |
| Turn On Time |
98 ns |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSSO-G2 |
| IGBT Type |
NPT |
| Gate Charge |
140nC |
| Current - Collector Pulsed (Icm) |
75A |
| Td (on/off) @ 25°C |
21ns/336ns |
| Switching Energy |
2.97mJ (on), 790μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
80ns |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
IXYS IXGT24N60C
In stock
| Manufacturer |
IXYS |
|---|---|
| Reach Compliance Code |
unknown |
| Mounting Type |
Surface Mount |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 24A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
HiPerFAST™, Lightspeed™ |
| JESD-609 Code |
e3 |
| Published |
2000 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
FAST SWITCHING |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Max Collector Current |
48A |
| Turn On Time |
15 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
150W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Base Part Number |
IXG*24N60 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 24A |
| Turn Off Time-Nom (toff) |
130 ns |
| Gate Charge |
55nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
15ns/75ns |
| Switching Energy |
240μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
110ns |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXGT24N60CD1
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e3 |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 24A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Base Part Number |
IXG*24N60 |
| Series |
HiPerFAST™, Lightspeed™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Reverse Recovery Time |
25 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
150W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
48A |
| Turn On Time |
15 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 24A |
| Pin Count |
3 |
| Turn Off Time-Nom (toff) |
130 ns |
| Gate Charge |
55nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
15ns/75ns |
| Switching Energy |
240μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Fall Time-Max (tf) |
110ns |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
IXYS IXGT25N250-T/R
In stock
| Manufacturer |
IXYS |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-268HV |
| Brand |
IXYS |
| Mfr |
IXYS |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tray |
| Subcategory |
IGBTs |
| Input Type |
Standard |
| Power - Max |
250 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
2500 V |
| Current - Collector (Ic) (Max) |
60 A |
| Test Condition |
1250V, 50A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 25A |
| IGBT Type |
NPT |
| Gate Charge |
75 nC |
| Current - Collector Pulsed (Icm) |
200 A |
| Td (on/off) @ 25°C |
68ns/209ns |
| Reverse Recovery Time (trr) |
233 ns |
| Product Category |
IGBT Transistors |
IXYS IXGT25N250HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Subcategory |
IGBTs |
| Supplier Device Package |
TO-268HV |
| Brand |
IXYS |
| Mfr |
IXYS |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Bulk |
| Mounting Type |
Surface Mount |
| Input Type |
Standard |
| Technology |
Si |
| Power - Max |
250 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
2500 V |
| Current - Collector (Ic) (Max) |
60 A |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 25A |
| Gate Charge |
75 nC |
| Current - Collector Pulsed (Icm) |
200 A |
| Product Category |
IGBT Transistors |
IXYS IXGT28N120B
In stock
| Manufacturer |
IXYS |
|---|---|
| Base Part Number |
IXG*28N120 |
| Mounting Type |
Surface Mount |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 28A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
250W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
25 Weeks |
| Turn On Time |
63 ns |
| Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 28A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
50A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Turn Off Time-Nom (toff) |
590 ns |
| IGBT Type |
PT |
| Gate Charge |
92nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
30ns/210ns |
| Switching Energy |
2.2mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
320ns |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXGT28N60B
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Weight |
4.500005g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 28A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
FAST |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2003 |
| Base Part Number |
IXG*28N60 |
| Max Collector Current |
40A |
| Turn On Time |
15 ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
150W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 28A |
| Turn Off Time-Nom (toff) |
400 ns |
| Gate Charge |
68nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
15ns/175ns |
| Switching Energy |
2mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Fall Time-Max (tf) |
400ns |
| RoHS Status |
RoHS Compliant |
IXYS IXGT2N250
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
2.5kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
8 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
32W |
| Terminal Form |
GULL WING |
| Published |
2009 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Collector Emitter Voltage (VCEO) |
3.1V |
| Max Collector Current |
5.5A |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
32W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Voltage - Collector Emitter Breakdown (Max) |
2500V |
| Turn On Time |
115 ns |
| Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 2A |
| Turn Off Time-Nom (toff) |
278 ns |
| Gate Charge |
10.5nC |
| Current - Collector Pulsed (Icm) |
13.5A |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| RoHS Status |
ROHS3 Compliant |