Showing 1861–1872 of 3680 results
Transistors - IGBTs - Single
IXYS IXGT30N60B
In stock
Manufacturer |
IXYS |
---|---|
Published |
2000 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 30A, 4.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
Series |
HiPerFAST™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
200W |
Terminal Form |
GULL WING |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*30N60 |
Pin Count |
3 |
Turn On Time |
25 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
Turn Off Time-Nom (toff) |
200 ns |
Gate Charge |
125nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
25ns/130ns |
Switching Energy |
1.3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
RoHS Compliant |
IXYS IXGT30N60B2
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 24A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
190W |
Terminal Form |
GULL WING |
Published |
2003 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
70A |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
190W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*30N60 |
Pin Count |
4 |
Turn On Time |
30 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 24A |
Turn Off Time-Nom (toff) |
350 ns |
IGBT Type |
PT |
Gate Charge |
66nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
13ns/110ns |
Switching Energy |
320μJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXGT30N60B2D1
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 24A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
HiPerFAST™ |
JESD-609 Code |
e3 |
Published |
2004 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
190W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Max Collector Current |
70A |
Reverse Recovery Time |
25 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
190W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
4 |
Base Part Number |
IXG*30N60 |
Turn On Time |
30 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 24A |
Turn Off Time-Nom (toff) |
350 ns |
IGBT Type |
PT |
Gate Charge |
66nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
13ns/110ns |
Switching Energy |
320μJ (off) |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
RoHS Compliant |
IXYS IXGT31N60D1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2000 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 31A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
FAST |
Max Power Dissipation |
150W |
Terminal Form |
GULL WING |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
60A |
Reverse Recovery Time |
25 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Turn On Time |
15 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 31A |
Turn Off Time-Nom (toff) |
800 ns |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
15ns/400ns |
Switching Energy |
6mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
RoHS Compliant |
IXYS IXGT32N120A3
In stock
Manufacturer |
IXYS |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2011 |
Reach Compliance Code |
unknown |
Factory Lead Time |
26 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
PURE TIN |
Max Power Dissipation |
300W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Series |
GenX3™ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
75A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Power Dissipation |
300W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.35V |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Turn On Time |
239 ns |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 32A |
Turn Off Time-Nom (toff) |
1380 ns |
IGBT Type |
PT |
Gate Charge |
89nC |
Current - Collector Pulsed (Icm) |
230A |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
ROHS3 Compliant |
IXYS IXGT32N170
In stock
Manufacturer |
IXYS |
---|---|
Published |
2003 |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Test Conditions |
1020V, 32A, 2.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
IXG*32N170 |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
350W |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
24 Weeks |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
JESD-30 Code |
R-PSSO-G2 |
Power Dissipation |
350W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
75A |
Turn On Time |
90 ns |
Vce(on) (Max) @ Vge, Ic |
3.3V @ 15V, 32A |
Pin Count |
4 |
Turn Off Time-Nom (toff) |
920 ns |
IGBT Type |
NPT |
Gate Charge |
155nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
45ns/270ns |
Switching Energy |
11mJ (off) |
Radiation Hardening |
No |
Element Configuration |
Single |
RoHS Status |
ROHS3 Compliant |
IXYS IXGT32N60C
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™, Lightspeed™ |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 32A, 4.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Surface Mount |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
200W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Published |
2000 |
Base Part Number |
IXG*32N60 |
Max Collector Current |
60A |
Turn On Time |
25 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 32A |
Turn Off Time-Nom (toff) |
110 ns |
Gate Charge |
110nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
25ns/85ns |
Switching Energy |
320μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
160ns |
RoHS Status |
RoHS Compliant |
IXYS IXGT39N60BD1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2003 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 39A, 4.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Surface Mount |
Series |
HiPerFAST™ |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Max Power Dissipation |
200W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tube |
Base Part Number |
IXG*39N60 |
Collector Emitter Voltage (VCEO) |
1.7V |
Max Collector Current |
76A |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Reverse Recovery Time |
25 ns |
Turn On Time |
55 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 39A |
Turn Off Time-Nom (toff) |
710 ns |
Gate Charge |
110nC |
Current - Collector Pulsed (Icm) |
152A |
Td (on/off) @ 25°C |
25ns/250ns |
Switching Energy |
4mJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXGT40N120B2D1
In stock
Manufacturer |
IXYS |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 40A, 2 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Pin Count |
4 |
Factory Lead Time |
8 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
PURE TIN |
Max Power Dissipation |
380W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*40N120 |
Published |
2008 |
JESD-30 Code |
R-PSSO-G2 |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 40A |
Turn Off Time-Nom (toff) |
770 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
380W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
75A |
Reverse Recovery Time |
100 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
79 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
IGBT Type |
PT |
Gate Charge |
138nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
21ns/290ns |
Switching Energy |
4.5mJ (on), 3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
270ns |
Height |
5.1mm |
Length |
16.05mm |
Width |
14mm |
RoHS Status |
ROHS3 Compliant |
IXYS IXGT40N60B2D1
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 3.3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
HiPerFAST™ |
JESD-609 Code |
e3 |
Published |
2004 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
300W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Max Collector Current |
75A |
Reverse Recovery Time |
25 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
4 |
Base Part Number |
IXG*40N60 |
Turn On Time |
38 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 30A |
Turn Off Time-Nom (toff) |
390 ns |
IGBT Type |
PT |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/130ns |
Switching Energy |
400μJ (off) |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
RoHS Compliant |
IXYS IXGT40N60C2
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
300W |
Terminal Form |
GULL WING |
Published |
2005 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*40N60 |
Pin Count |
4 |
Turn On Time |
38 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 30A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
PT |
Gate Charge |
95nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/90ns |
Switching Energy |
200μJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXGT45N120
In stock
Manufacturer |
IXYS |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 45A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2001 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
300W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Mount |
Surface Mount |
Factory Lead Time |
8 Weeks |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
JESD-30 Code |
R-PSSO-G2 |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
75A |
Turn On Time |
96 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 45A |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
1400 ns |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
180A |
Td (on/off) @ 25°C |
55ns/370ns |
Switching Energy |
14mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
700ns |
Qualification Status |
Not Qualified |
RoHS Status |
ROHS3 Compliant |