Showing 1873–1884 of 3680 results

Transistors - IGBTs - Single

IXYS IXGT50N60B

In stock

SKU: IXGT50N60B-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 2.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

HiPerFAST™

JESD-609 Code

e3

Published

2003

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

300W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Mount

Surface Mount

Max Collector Current

75A

Turn On Time

100 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Pin Count

3

Base Part Number

IXG*50N60

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Turn Off Time-Nom (toff)

450 ns

Gate Charge

160nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/150ns

Switching Energy

3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

JESD-30 Code

R-PSSO-G2

RoHS Status

RoHS Compliant

IXYS IXGT50N60B2

In stock

SKU: IXGT50N60B2-9
Manufacturer

IXYS

Published

2004

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Terminal Form

GULL WING

Mount

Surface Mount

Series

HiPerFAST™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

400W

Packaging

Tube

Base Part Number

IXG*50N60

Max Collector Current

75A

Turn On Time

43 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

400W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Pin Count

4

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Turn Off Time-Nom (toff)

430 ns

IGBT Type

PT

Gate Charge

140nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

18ns/190ns

Switching Energy

550μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

IXYS IXGT50N90B2

In stock

SKU: IXGT50N90B2-9
Manufacturer

IXYS

Published

2005

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

720V, 50A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

8 Weeks

Series

HiPerFAST™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

PURE TIN

Max Power Dissipation

400W

Terminal Form

GULL WING

Packaging

Tube

Reach Compliance Code

unknown

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

900V

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

400W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*50N90

Max Collector Current

75A

Turn On Time

48 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Turn Off Time-Nom (toff)

820 ns

IGBT Type

PT

Gate Charge

135nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

20ns/350ns

Switching Energy

4.7mJ (off)

RoHS Status

ROHS3 Compliant

IXYS IXGT60N60B2

In stock

SKU: IXGT60N60B2-9
Manufacturer

IXYS

Series

HiPerFAST™

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 3.3 Ω, 15V

Turn Off Delay Time

160 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2003

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

500W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Mount

Surface Mount

Collector Emitter Voltage (VCEO)

600V

Pin Count

4

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

28 ns

Power - Max

500W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Max Collector Current

75A

Turn On Time

64 ns

Base Part Number

IXG*60N60

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 50A

Turn Off Time-Nom (toff)

550 ns

IGBT Type

PT

Gate Charge

170nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

28ns/160ns

Switching Energy

1mJ (off)

RoHS Status

RoHS Compliant

JESD-30 Code

R-PSSO-G2

Lead Free

Lead Free

IXYS IXGT60N60C2

In stock

SKU: IXGT60N60C2-9
Manufacturer

IXYS

Series

HiPerFAST™

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 2 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Surface Mount

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

480W

Terminal Form

GULL WING

Published

2003

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

480W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IXG*60N60

Pin Count

4

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

PT

Gate Charge

146nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

18ns/95ns

Switching Energy

480μJ (off)

RoHS Status

RoHS Compliant

IXYS IXGT6N170A

In stock

SKU: IXGT6N170A-9
Manufacturer

IXYS

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

850V, 6A, 33 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Base Part Number

IXG*6N170

Factory Lead Time

26 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

75W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2009

Pin Count

4

Turn On Time

91 ns

Vce(on) (Max) @ Vge, Ic

7V @ 15V, 3A

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

75W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

6A

Voltage - Collector Emitter Breakdown (Max)

1700V

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Turn Off Time-Nom (toff)

271 ns

IGBT Type

NPT

Gate Charge

18.5nC

Current - Collector Pulsed (Icm)

14A

Td (on/off) @ 25°C

46ns/220ns

Switching Energy

590μJ (on), 180μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

65ns

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXGT6N170A-TRL

In stock

SKU: IXGT6N170A-TRL-9
Manufacturer

IXYS

Factory Lead Time

1 Weeks

Mounting Type

Surface Mount

Current-Collector (Ic) (Max)

6A

Test Conditions

850V, 6A, 33 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Part Status

Active

Input Type

Standard

Power - Max

75W

Reverse Recovery Time

40ns

Voltage - Collector Emitter Breakdown (Max)

1700V

Vce(on) (Max) @ Vge, Ic

7V @ 15V, 3A

Gate Charge

18.5nC

Current - Collector Pulsed (Icm)

14A

Td (on/off) @ 25°C

46ns/220ns

Switching Energy

590μJ (on), 180μJ (off)

IXYS IXGT72N60A3-TRL

In stock

SKU: IXGT72N60A3-TRL-9
Manufacturer

IXYS

Input Type

Standard

Mounting Type

Surface Mount

Current-Collector (Ic) (Max)

75A

Test Conditions

480V, 50A, 3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Series

GenX3™

Part Status

Active

Factory Lead Time

26 Weeks

Reverse Recovery Time

34ns

Power - Max

540W

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 60A

IGBT Type

PT

Gate Charge

230nC

Current - Collector Pulsed (Icm)

400A

Td (on/off) @ 25°C

31ns/320ns

Switching Energy

1.38mJ (on), 3.5mJ (off)

IXYS IXGT72N60B3

In stock

SKU: IXGT72N60B3-9
Manufacturer

IXYS

Part Status

Active

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Operating Temperature (Max.)

150°C

Test Conditions

480V, 50A, 3 Ω, 15V

Packaging

Tube

Series

GenX3™

JESD-609 Code

e3

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pbfree Code

yes

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

540W

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Mount

Surface Mount

Factory Lead Time

20 Weeks

Turn On Time

63 ns

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

540W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

75A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 60A

Turn Off Time-Nom (toff)

370 ns

Pin Count

4

IGBT Type

PT

Gate Charge

230nC

Current - Collector Pulsed (Icm)

400A

Td (on/off) @ 25°C

31ns/150ns

Switching Energy

1.38mJ (on), 1.05mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

160ns

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

IXYS IXGV25N250S

In stock

SKU: IXGV25N250S-9
Manufacturer

IXYS

Pbfree Code

yes

Mounting Type

Surface Mount

Package / Case

PLUS-220SMD

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

2.5kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Surface Mount

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Max Power Dissipation

250W

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2007

Base Part Number

IXG*25N250

Collector Emitter Voltage (VCEO)

5.2V

Max Collector Current

60A

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Pin Count

3

JESD-30 Code

R-PSSO-G2

Voltage - Collector Emitter Breakdown (Max)

2500V

Turn On Time

301 ns

Vce(on) (Max) @ Vge, Ic

5.2V @ 15V, 75A

Turn Off Time-Nom (toff)

409 ns

IGBT Type

NPT

Gate Charge

75nC

Current - Collector Pulsed (Icm)

200A

RoHS Status

RoHS Compliant

IXYS IXGX100N160A

In stock

SKU: IXGX100N160A-9
Manufacturer

IXYS

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Packaging

Tube

Published

2012

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

ROHS3 Compliant

IXYS IXGX100N170

In stock

SKU: IXGX100N170-9
Manufacturer

IXYS

Published

2012

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

830W

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

170A

Voltage - Collector Emitter Breakdown (Max)

1700V

Element Configuration

Single

Power Dissipation

830W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3V

Pin Count

3

Qualification Status

Not Qualified

Turn On Time

285 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 100A

Turn Off Time-Nom (toff)

720 ns

IGBT Type

NPT

Gate Charge

425nC

Current - Collector Pulsed (Icm)

600A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

ROHS3 Compliant