Showing 1873–1884 of 3680 results
Transistors - IGBTs - Single
IXYS IXGT50N60B
In stock
Manufacturer |
IXYS |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 50A, 2.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
HiPerFAST™ |
JESD-609 Code |
e3 |
Published |
2003 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
300W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Max Collector Current |
75A |
Turn On Time |
100 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
3 |
Base Part Number |
IXG*50N60 |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 50A |
Turn Off Time-Nom (toff) |
450 ns |
Gate Charge |
160nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
50ns/150ns |
Switching Energy |
3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
RoHS Compliant |
IXYS IXGT50N60B2
In stock
Manufacturer |
IXYS |
---|---|
Published |
2004 |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 40A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Series |
HiPerFAST™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
400W |
Packaging |
Tube |
Base Part Number |
IXG*50N60 |
Max Collector Current |
75A |
Turn On Time |
43 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
400W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
Turn Off Time-Nom (toff) |
430 ns |
IGBT Type |
PT |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
18ns/190ns |
Switching Energy |
550μJ (off) |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
IXYS IXGT50N90B2
In stock
Manufacturer |
IXYS |
---|---|
Published |
2005 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Test Conditions |
720V, 50A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
8 Weeks |
Series |
HiPerFAST™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
PURE TIN |
Max Power Dissipation |
400W |
Terminal Form |
GULL WING |
Packaging |
Tube |
Reach Compliance Code |
unknown |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
900V |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
400W |
Transistor Application |
POWER CONTROL |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
IXG*50N90 |
Max Collector Current |
75A |
Turn On Time |
48 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 50A |
Turn Off Time-Nom (toff) |
820 ns |
IGBT Type |
PT |
Gate Charge |
135nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
20ns/350ns |
Switching Energy |
4.7mJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXGT60N60B2
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 3.3 Ω, 15V |
Turn Off Delay Time |
160 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2003 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
500W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Collector Emitter Voltage (VCEO) |
600V |
Pin Count |
4 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
28 ns |
Power - Max |
500W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Max Collector Current |
75A |
Turn On Time |
64 ns |
Base Part Number |
IXG*60N60 |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 50A |
Turn Off Time-Nom (toff) |
550 ns |
IGBT Type |
PT |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
28ns/160ns |
Switching Energy |
1mJ (off) |
RoHS Status |
RoHS Compliant |
JESD-30 Code |
R-PSSO-G2 |
Lead Free |
Lead Free |
IXYS IXGT60N60C2
In stock
Manufacturer |
IXYS |
---|---|
Series |
HiPerFAST™ |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 2 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
480W |
Terminal Form |
GULL WING |
Published |
2003 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
480W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
IXG*60N60 |
Pin Count |
4 |
Turn On Time |
43 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 50A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
PT |
Gate Charge |
146nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
18ns/95ns |
Switching Energy |
480μJ (off) |
RoHS Status |
RoHS Compliant |
IXYS IXGT6N170A
In stock
Manufacturer |
IXYS |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Weight |
4.500005g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Test Conditions |
850V, 6A, 33 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Base Part Number |
IXG*6N170 |
Factory Lead Time |
26 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
75W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2009 |
Pin Count |
4 |
Turn On Time |
91 ns |
Vce(on) (Max) @ Vge, Ic |
7V @ 15V, 3A |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
75W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7kV |
Max Collector Current |
6A |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Turn Off Time-Nom (toff) |
271 ns |
IGBT Type |
NPT |
Gate Charge |
18.5nC |
Current - Collector Pulsed (Icm) |
14A |
Td (on/off) @ 25°C |
46ns/220ns |
Switching Energy |
590μJ (on), 180μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
65ns |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXGT6N170A-TRL
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
1 Weeks |
Mounting Type |
Surface Mount |
Current-Collector (Ic) (Max) |
6A |
Test Conditions |
850V, 6A, 33 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Active |
Input Type |
Standard |
Power - Max |
75W |
Reverse Recovery Time |
40ns |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Vce(on) (Max) @ Vge, Ic |
7V @ 15V, 3A |
Gate Charge |
18.5nC |
Current - Collector Pulsed (Icm) |
14A |
Td (on/off) @ 25°C |
46ns/220ns |
Switching Energy |
590μJ (on), 180μJ (off) |
IXYS IXGT72N60A3-TRL
In stock
Manufacturer |
IXYS |
---|---|
Input Type |
Standard |
Mounting Type |
Surface Mount |
Current-Collector (Ic) (Max) |
75A |
Test Conditions |
480V, 50A, 3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Series |
GenX3™ |
Part Status |
Active |
Factory Lead Time |
26 Weeks |
Reverse Recovery Time |
34ns |
Power - Max |
540W |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 60A |
IGBT Type |
PT |
Gate Charge |
230nC |
Current - Collector Pulsed (Icm) |
400A |
Td (on/off) @ 25°C |
31ns/320ns |
Switching Energy |
1.38mJ (on), 3.5mJ (off) |
IXYS IXGT72N60B3
In stock
Manufacturer |
IXYS |
---|---|
Part Status |
Active |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Operating Temperature (Max.) |
150°C |
Test Conditions |
480V, 50A, 3 Ω, 15V |
Packaging |
Tube |
Series |
GenX3™ |
JESD-609 Code |
e3 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pbfree Code |
yes |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
540W |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Mount |
Surface Mount |
Factory Lead Time |
20 Weeks |
Turn On Time |
63 ns |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
540W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
75A |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 60A |
Turn Off Time-Nom (toff) |
370 ns |
Pin Count |
4 |
IGBT Type |
PT |
Gate Charge |
230nC |
Current - Collector Pulsed (Icm) |
400A |
Td (on/off) @ 25°C |
31ns/150ns |
Switching Energy |
1.38mJ (on), 1.05mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
160ns |
Qualification Status |
Not Qualified |
RoHS Status |
ROHS3 Compliant |
IXYS IXGV25N250S
In stock
Manufacturer |
IXYS |
---|---|
Pbfree Code |
yes |
Mounting Type |
Surface Mount |
Package / Case |
PLUS-220SMD |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
2.5kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Surface Mount |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Max Power Dissipation |
250W |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Published |
2007 |
Base Part Number |
IXG*25N250 |
Collector Emitter Voltage (VCEO) |
5.2V |
Max Collector Current |
60A |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Voltage - Collector Emitter Breakdown (Max) |
2500V |
Turn On Time |
301 ns |
Vce(on) (Max) @ Vge, Ic |
5.2V @ 15V, 75A |
Turn Off Time-Nom (toff) |
409 ns |
IGBT Type |
NPT |
Gate Charge |
75nC |
Current - Collector Pulsed (Icm) |
200A |
RoHS Status |
RoHS Compliant |
IXYS IXGX100N170
In stock
Manufacturer |
IXYS |
---|---|
Published |
2012 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.7kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
830W |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
170A |
Voltage - Collector Emitter Breakdown (Max) |
1700V |
Element Configuration |
Single |
Power Dissipation |
830W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3V |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Turn On Time |
285 ns |
Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 100A |
Turn Off Time-Nom (toff) |
720 ns |
IGBT Type |
NPT |
Gate Charge |
425nC |
Current - Collector Pulsed (Icm) |
600A |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
ROHS3 Compliant |