Showing 1897–1908 of 3680 results

Transistors - IGBTs - Single

IXYS IXGX50N120C3H1

In stock

SKU: IXGX50N120C3H1-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 40A, 2 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

GenX3™

JESD-609 Code

e1

Published

2012

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

460W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

8 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

60 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

460W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4.2V

Max Collector Current

95A

Reverse Recovery Time

75 ns

JESD-30 Code

R-PSIP-T3

Pin Count

3

Vce(on) (Max) @ Vge, Ic

4.2V @ 15V, 40A

Turn Off Time-Nom (toff)

485 ns

IGBT Type

PT

Gate Charge

196nC

Current - Collector Pulsed (Icm)

240A

Td (on/off) @ 25°C

31ns/123ns

Switching Energy

2mJ (on), 630μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

IXYS IXGX50N60BD1

In stock

SKU: IXGX50N60BD1-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 2.7 Ω, 15V

Turn Off Delay Time

200 ns

Operating Temperature

-55°C~150°C TJ

Published

2000

Series

HiPerFAST™

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

HIGH SPEED

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

50 ns

Turn On Time

110 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

50 ns

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Pin Count

3

Base Part Number

IXG*50N60

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Turn Off Time-Nom (toff)

375 ns

Gate Charge

110nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

1.5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

RoHS Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

IXYS IXGX50N60C2D1

In stock

SKU: IXGX50N60C2D1-9
Manufacturer

IXYS

Published

2012

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 2 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

480W

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

75A

Reverse Recovery Time

35 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

480W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Base Part Number

IXG*50N60

Pin Count

3

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Turn Off Time-Nom (toff)

230 ns

IGBT Type

PT

Gate Charge

138nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

18ns/115ns

Switching Energy

380μJ (off)

RoHS Status

RoHS Compliant

IXYS IXGX55N120A3H1

In stock

SKU: IXGX55N120A3H1-9
Manufacturer

IXYS

Series

GenX3™

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature (Max.)

150°C

Test Conditions

960V, 55A, 3 Ω, 15V

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

8 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

460W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2012

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

70 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

460W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.3V

Max Collector Current

125A

Reverse Recovery Time

200 ns

JESD-30 Code

R-PSIP-T3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 55A

Turn Off Time-Nom (toff)

1253 ns

IGBT Type

PT

Gate Charge

185nC

Current - Collector Pulsed (Icm)

400A

Td (on/off) @ 25°C

23ns/365ns

Switching Energy

5.1mJ (on), 13.3mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

ROHS3 Compliant

IXYS IXGX60N60B2D1

In stock

SKU: IXGX60N60B2D1-9
Manufacturer

IXYS

Published

2003

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 3.3 Ω, 15V

Turn Off Delay Time

310 ns

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

500W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

75A

Pin Count

3

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

28 ns

Power - Max

500W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Reverse Recovery Time

35 ns

Turn On Time

64 ns

Base Part Number

IXG*60N60

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 50A

Turn Off Time-Nom (toff)

550 ns

IGBT Type

PT

Gate Charge

170nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

28ns/160ns

Switching Energy

1mJ (off)

RoHS Status

RoHS Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

IXYS IXGX60N60C2D1

In stock

SKU: IXGX60N60C2D1-9
Manufacturer

IXYS

Min Operating Temperature

-55°C

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

PLUS247™-3

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

75A

Turn Off Delay Time

95 ns

Operating Temperature

-55°C~150°C TJ

Test Conditions

400V, 50A, 2Ohm, 15V

Packaging

Tube

Published

2005

Series

HiPerFAST™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Input Type

Standard

Turn On Delay Time

18 ns

Power - Max

480W

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Reverse Recovery Time

35 ns

Base Part Number

IXG*60N60

Max Power Dissipation

480W

IGBT Type

PT

Gate Charge

146nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

18ns/95ns

Switching Energy

400μJ (on), 480μJ (off)

RoHS Status

RoHS Compliant

Element Configuration

Single

Lead Free

Lead Free

IXYS IXGX72N60B3H1

In stock

SKU: IXGX72N60B3H1-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2009

JESD-609 Code

e1

Pbfree Code

yes

Series

GenX3™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

540W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Mount

Through Hole

Factory Lead Time

8 Weeks

Turn On Time

63 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 60A

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

540W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

75A

Reverse Recovery Time

140 ns

Pin Count

3

Base Part Number

IXG*72N60

Turn Off Time-Nom (toff)

370 ns

IGBT Type

PT

Gate Charge

225nC

Current - Collector Pulsed (Icm)

450A

Td (on/off) @ 25°C

31ns/152ns

Switching Energy

1.4mJ (on), 1mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

RoHS Status

ROHS3 Compliant

JESD-30 Code

R-PSIP-T3

Lead Free

Lead Free

IXYS IXGX75N250

In stock

SKU: IXGX75N250-9
Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

2.5kV

Number of Elements

1

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

28 Weeks

Published

2010

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

780W

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

170A

Voltage - Collector Emitter Breakdown (Max)

2500V

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

780W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.6V

Pin Count

3

Qualification Status

Not Qualified

Turn On Time

305 ns

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 150A

Turn Off Time-Nom (toff)

420 ns

IGBT Type

NPT

Gate Charge

410nC

Current - Collector Pulsed (Icm)

530A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

ROHS3 Compliant

IXYS IXLF19N250A

In stock

SKU: IXLF19N250A-9
Manufacturer

IXYS

Packaging

Bulk

Mounting Type

Through Hole

Package / Case

i4-Pac™-5 (3 Leads)

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

2.5kV

Number of Elements

1

Test Conditions

1500V, 19A, 47 Ω, 15V

Turn Off Delay Time

600 ns

Current Rating

32A

Operating Temperature

-55°C~150°C TJ

Published

2005

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Voltage - Rated DC

2.5kV

Max Power Dissipation

250W

Mount

Through Hole

Factory Lead Time

38 Weeks

Voltage - Collector Emitter Breakdown (Max)

2500V

Element Configuration

Single

Case Connection

ISOLATED

Input Type

Standard

Turn On Delay Time

100 ns

Transistor Application

POWER CONTROL

Rise Time

50ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.5kV

Max Collector Current

32A

Turn On Time

150 ns

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 19A

Pin Count

3

Turn Off Time-Nom (toff)

850 ns

IGBT Type

NPT

Gate Charge

142nC

Switching Energy

15mJ (on), 30mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

8V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Power Dissipation

250W

Lead Free

Lead Free

IXYS IXRH40N120

In stock

SKU: IXRH40N120-9
Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Test Conditions

600V, 35A, 15 Ω, 15V

Published

2005

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

2.1μs

JEDEC-95 Code

TO-247AD

Power Dissipation

300W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

55A

Qualification Status

Not Qualified

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

220 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Turn Off Time-Nom (toff)

350 ns

IGBT Type

NPT

Gate Charge

90nC

Switching Energy

3mJ (on), 700μJ (off)

Element Configuration

Single

RoHS Status

RoHS Compliant

IXYS IXRP15N120

In stock

SKU: IXRP15N120-9
Manufacturer

IXYS

JESD-609 Code

e3

Mounting Type

Through Hole

Package / Case

TO-220-3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 10A, 47 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

3

Mount

Through Hole

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2011

JESD-30 Code

R-PSFM-T3

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

1200V

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.95V

Max Collector Current

25A

Reverse Recovery Time

300 ns

Qualification Status

Not Qualified

Element Configuration

Single

Turn On Time

33.5 ns

Vce(on) (Max) @ Vge, Ic

2.95V @ 15V, 10A

Turn Off Time-Nom (toff)

253 ns

IGBT Type

NPT

Gate Charge

36nC

Switching Energy

1.1mJ (on), 130μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

RoHS Status

RoHS Compliant

IXYS IXRR40N120

In stock

SKU: IXRR40N120-9
Manufacturer

IXYS

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Packaging

Tube

Published

2008

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Element Configuration

Single

Input Type

Standard

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

45A

Voltage - Collector Emitter Breakdown (Max)

1200V

RoHS Status

ROHS3 Compliant