Showing 1957–1968 of 3680 results

Transistors - IGBTs - Single

IXYS IXSX80N60B

In stock

SKU: IXSX80N60B-9
Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

7.300002g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 80A, 2.7 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Published

2003

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW SATURATION VOLTAGE

Max Power Dissipation

500W

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

160A

Turn On Time

120 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

500W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Base Part Number

IXS*80N60

Pin Count

3

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 80A

Turn Off Time-Nom (toff)

450 ns

IGBT Type

PT

Gate Charge

240nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

60ns/140ns

Switching Energy

4.2mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

8V

RoHS Status

RoHS Compliant

IXYS IXTA7N60P

In stock

SKU: IXTA7N60P-9
Manufacturer

IXYS Corporation

Package Description

SMALL OUTLINE, R-PSSO-G2

Number of Terminals

2

Transistor Element Material

SILICON

Drain Current-Max (ID)

7 A

Ihs Manufacturer

IXYS CORP

Manufacturer Part Number

IXTA7N60P

Moisture Sensitivity Level

2

Operating Temperature-Max

150 °C

Pbfree Code

Yes

Surface Mount

YES

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Part Life Cycle Code

Obsolete

Part Package Code

D2PAK

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

5.83

Rohs Code

Yes

JESD-609 Code

e3

Package Body Material

PLASTIC/EPOXY

Terminal Finish

Matte Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Number of Elements

1

Additional Feature

AVALANCHE RATED

Terminal Position

SINGLE

Case Connection

DRAIN

Transistor Application

SWITCHING

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-263AB

Drain-source On Resistance-Max

1.1 Ω

Pulsed Drain Current-Max (IDM)

14 A

DS Breakdown Voltage-Min

600 V

Avalanche Energy Rating (Eas)

400 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

IXYS IXXA50N60B3

In stock

SKU: IXXA50N60B3-9
Manufacturer

IXYS

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Number of Elements

1

Test Conditions

360V, 36A, 5 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Factory Lead Time

28 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

2 (1 Year)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Pin Count

4

JESD-30 Code

R-PSSO-G2

Series

XPT™, GenX3™

Case Connection

COLLECTOR

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 36A

Turn Off Time-Nom (toff)

320 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

120A

Reverse Recovery Time

40ns

Power Dissipation-Max (Abs)

600W

Turn On Time

75 ns

Input Type

Standard

Power - Max

600W

Gate Charge

70nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

27ns/150ns

Switching Energy

670μJ (on), 1.2mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Radiation Hardening

No

RoHS Status

RoHS Compliant

IXYS IXXH100N60B3

In stock

SKU: IXXH100N60B3-9
Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

360V, 70A, 2 Ω, 15V

Pin Count

3

Factory Lead Time

28 Weeks

Published

2013

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

AVALANCHE RATED

Max Power Dissipation

830W

Terminal Position

SINGLE

Base Part Number

IXX*N60

Operating Temperature

-55°C~175°C TJ

JESD-30 Code

R-PSFM-T3

Turn On Time

92 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 70A

Power Dissipation

830W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

220A

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

Configuration

SINGLE

Turn Off Time-Nom (toff)

350 ns

IGBT Type

PT

Gate Charge

143nC

Current - Collector Pulsed (Icm)

480A

Td (on/off) @ 25°C

30ns/120ns

Switching Energy

1.9mJ (on), 2mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXXH110N65B4

In stock

SKU: IXXH110N65B4-9
Manufacturer

IXYS

Reach Compliance Code

compliant

Mounting Type

Through Hole

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

250A

Test Conditions

400V, 55A, 2 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Series

XPT™, GenX4™

Part Status

Active

Factory Lead Time

28 Weeks

Power - Max

880W

Input Type

Standard

Reverse Recovery Time

40ns

Voltage - Collector Emitter Breakdown (Max)

650V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 110A

IGBT Type

PT

Gate Charge

183nC

Current - Collector Pulsed (Icm)

570A

Td (on/off) @ 25°C

26ns/146ns

Switching Energy

2.2mJ (on), 1.05mJ (off)

IXYS IXXH110N65C4

In stock

SKU: IXXH110N65C4-9
Manufacturer

IXYS

Factory Lead Time

28 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 55A, 2 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2015

Series

GenX4™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

880W

Base Part Number

110N65

Element Configuration

Single

Power Dissipation

880W

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

234A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 110A

IGBT Type

PT

Gate Charge

180nC

Current - Collector Pulsed (Icm)

600A

Td (on/off) @ 25°C

35ns/143ns

Switching Energy

2.3mJ (on), 600μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXXH140N65B4

In stock

SKU: IXXH140N65B4-9
Manufacturer

IXYS

Reach Compliance Code

compliant

Mounting Type

Through Hole

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

340A

Test Conditions

400V, 100A, 4.7 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Series

XPT™, GenX4™

Part Status

Active

Factory Lead Time

28 Weeks

Power - Max

1200W

Input Type

Standard

Reverse Recovery Time

105ns

Voltage - Collector Emitter Breakdown (Max)

650V

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 120A

IGBT Type

PT

Gate Charge

250nC

Current - Collector Pulsed (Icm)

840A

Td (on/off) @ 25°C

54ns/270ns

Switching Energy

5.75mJ (on), 2.67mJ (off)

IXYS IXXH150N60C3

In stock

SKU: IXXH150N60C3-9
Manufacturer

IXYS

Factory Lead Time

28 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 75A, 2 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2013

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

1.36kW

Input Type

Standard

Power - Max

1360W

Collector Emitter Voltage (VCEO)

2.5V

Max Collector Current

300A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 150A

IGBT Type

PT

Gate Charge

200nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

34ns/120ns

Switching Energy

3.4mJ (on), 1.8mJ (off)

RoHS Status

ROHS3 Compliant

IXYS IXXH30N60B3D1

In stock

SKU: IXXH30N60B3D1-9
Manufacturer

IXYS

Published

2013

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Packaging

Tube

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

270W

Pin Count

3

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Mount

Through Hole

Factory Lead Time

28 Weeks

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 24A

Case Connection

COLLECTOR

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

25ns

JEDEC-95 Code

TO-247AD

Turn On Time

57 ns

Turn Off Time-Nom (toff)

292 ns

IGBT Type

PT

Power Dissipation

270W

Gate Charge

39nC

Current - Collector Pulsed (Icm)

115A

Td (on/off) @ 25°C

23ns/97ns

Switching Energy

550μJ (on), 500μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

IXYS IXXH30N60C3

In stock

SKU: IXXH30N60C3-9
Manufacturer

IXYS

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

Brand

IXYS

Factory Pack Quantity:Factory Pack Quantity

30

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Mfr

IXYS

Package

Tube

Product Status

Active

Operating Temperature

-55°C ~ 175°C (TJ)

Packaging

Bulk

Series

XPT™, GenX3™

Subcategory

IGBTs

Input Type

Standard

Power - Max

270 W

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

600 V

Current - Collector (Ic) (Max)

60 A

Test Condition

400V, 24A, 10Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 24A

Gate Charge

37 nC

Current - Collector Pulsed (Icm)

110 A

Td (on/off) @ 25°C

23ns/77ns

Switching Energy

500µJ (on), 270µJ (off)

Reverse Recovery Time (trr)

33 ns

Product Category

IGBT Transistors

IXYS IXXH30N60C3D1

In stock

SKU: IXXH30N60C3D1-9
Manufacturer

IXYS

Published

2015

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Qualification Status

Not Qualified

Packaging

Tube

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

270W

Terminal Position

SINGLE

Pin Count

3

JESD-30 Code

R-PSFM-T3

Mount

Through Hole

Factory Lead Time

28 Weeks

Turn On Time

57 ns

Case Connection

COLLECTOR

Power - Max

270W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.3V

Max Collector Current

60A

Reverse Recovery Time

25 ns

JEDEC-95 Code

TO-247AD

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 24A

Turn Off Time-Nom (toff)

166 ns

Configuration

SINGLE WITH BUILT-IN DIODE

IGBT Type

PT

Gate Charge

37nC

Current - Collector Pulsed (Icm)

110A

Td (on/off) @ 25°C

23ns/77ns

Switching Energy

500μJ (on), 270μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Input Type

Standard

RoHS Status

ROHS3 Compliant

IXYS IXXH30N65B4

In stock

SKU: IXXH30N65B4-9
Manufacturer

IXYS

Element Configuration

Single

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 30A, 15 Ω, 15V

Turn Off Delay Time

170 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2013

Series

GenX4™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

230W

Factory Lead Time

17 Weeks

Input Type

Standard

Power Dissipation

230W

Turn On Delay Time

32 ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

65A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

IGBT Type

PT

Gate Charge

52nC

Current - Collector Pulsed (Icm)

146A

Td (on/off) @ 25°C

32ns/170ns

Switching Energy

1.55mJ (on), 480μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free