Showing 1957–1968 of 3680 results
Transistors - IGBTs - Single
IXYS IXSX80N60B
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
7.300002g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 80A, 2.7 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Published |
2003 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW SATURATION VOLTAGE |
Max Power Dissipation |
500W |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Max Collector Current |
160A |
Turn On Time |
120 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
500W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Base Part Number |
IXS*80N60 |
Pin Count |
3 |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 80A |
Turn Off Time-Nom (toff) |
450 ns |
IGBT Type |
PT |
Gate Charge |
240nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
60ns/140ns |
Switching Energy |
4.2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
8V |
RoHS Status |
RoHS Compliant |
IXYS IXTA7N60P
In stock
Manufacturer |
IXYS Corporation |
---|---|
Package Description |
SMALL OUTLINE, R-PSSO-G2 |
Number of Terminals |
2 |
Transistor Element Material |
SILICON |
Drain Current-Max (ID) |
7 A |
Ihs Manufacturer |
IXYS CORP |
Manufacturer Part Number |
IXTA7N60P |
Moisture Sensitivity Level |
2 |
Operating Temperature-Max |
150 °C |
Pbfree Code |
Yes |
Surface Mount |
YES |
Package Shape |
RECTANGULAR |
Package Style |
SMALL OUTLINE |
Part Life Cycle Code |
Obsolete |
Part Package Code |
D2PAK |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.83 |
Rohs Code |
Yes |
JESD-609 Code |
e3 |
Package Body Material |
PLASTIC/EPOXY |
Terminal Finish |
Matte Tin (Sn) |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Additional Feature |
AVALANCHE RATED |
Terminal Position |
SINGLE |
Case Connection |
DRAIN |
Transistor Application |
SWITCHING |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-263AB |
Drain-source On Resistance-Max |
1.1 Ω |
Pulsed Drain Current-Max (IDM) |
14 A |
DS Breakdown Voltage-Min |
600 V |
Avalanche Energy Rating (Eas) |
400 mJ |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
IXYS IXXA50N60B3
In stock
Manufacturer |
IXYS |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Test Conditions |
360V, 36A, 5 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Factory Lead Time |
28 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Terminal Form |
GULL WING |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Series |
XPT™, GenX3™ |
Case Connection |
COLLECTOR |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 36A |
Turn Off Time-Nom (toff) |
320 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
120A |
Reverse Recovery Time |
40ns |
Power Dissipation-Max (Abs) |
600W |
Turn On Time |
75 ns |
Input Type |
Standard |
Power - Max |
600W |
Gate Charge |
70nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
27ns/150ns |
Switching Energy |
670μJ (on), 1.2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
IXYS IXXH100N60B3
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
360V, 70A, 2 Ω, 15V |
Pin Count |
3 |
Factory Lead Time |
28 Weeks |
Published |
2013 |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
830W |
Terminal Position |
SINGLE |
Base Part Number |
IXX*N60 |
Operating Temperature |
-55°C~175°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Turn On Time |
92 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 70A |
Power Dissipation |
830W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
220A |
JEDEC-95 Code |
TO-247AD |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Turn Off Time-Nom (toff) |
350 ns |
IGBT Type |
PT |
Gate Charge |
143nC |
Current - Collector Pulsed (Icm) |
480A |
Td (on/off) @ 25°C |
30ns/120ns |
Switching Energy |
1.9mJ (on), 2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXXH110N65B4
In stock
Manufacturer |
IXYS |
---|---|
Reach Compliance Code |
compliant |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current-Collector (Ic) (Max) |
250A |
Test Conditions |
400V, 55A, 2 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Series |
XPT™, GenX4™ |
Part Status |
Active |
Factory Lead Time |
28 Weeks |
Power - Max |
880W |
Input Type |
Standard |
Reverse Recovery Time |
40ns |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 110A |
IGBT Type |
PT |
Gate Charge |
183nC |
Current - Collector Pulsed (Icm) |
570A |
Td (on/off) @ 25°C |
26ns/146ns |
Switching Energy |
2.2mJ (on), 1.05mJ (off) |
IXYS IXXH110N65C4
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
28 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 55A, 2 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2015 |
Series |
GenX4™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
880W |
Base Part Number |
110N65 |
Element Configuration |
Single |
Power Dissipation |
880W |
Input Type |
Standard |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.35V |
Max Collector Current |
234A |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 110A |
IGBT Type |
PT |
Gate Charge |
180nC |
Current - Collector Pulsed (Icm) |
600A |
Td (on/off) @ 25°C |
35ns/143ns |
Switching Energy |
2.3mJ (on), 600μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXXH140N65B4
In stock
Manufacturer |
IXYS |
---|---|
Reach Compliance Code |
compliant |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current-Collector (Ic) (Max) |
340A |
Test Conditions |
400V, 100A, 4.7 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Series |
XPT™, GenX4™ |
Part Status |
Active |
Factory Lead Time |
28 Weeks |
Power - Max |
1200W |
Input Type |
Standard |
Reverse Recovery Time |
105ns |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 120A |
IGBT Type |
PT |
Gate Charge |
250nC |
Current - Collector Pulsed (Icm) |
840A |
Td (on/off) @ 25°C |
54ns/270ns |
Switching Energy |
5.75mJ (on), 2.67mJ (off) |
IXYS IXXH150N60C3
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
28 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 75A, 2 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2013 |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
1.36kW |
Input Type |
Standard |
Power - Max |
1360W |
Collector Emitter Voltage (VCEO) |
2.5V |
Max Collector Current |
300A |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 150A |
IGBT Type |
PT |
Gate Charge |
200nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
34ns/120ns |
Switching Energy |
3.4mJ (on), 1.8mJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXXH30N60B3D1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2013 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 24A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
270W |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Mount |
Through Hole |
Factory Lead Time |
28 Weeks |
Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 24A |
Case Connection |
COLLECTOR |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
25ns |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
57 ns |
Turn Off Time-Nom (toff) |
292 ns |
IGBT Type |
PT |
Power Dissipation |
270W |
Gate Charge |
39nC |
Current - Collector Pulsed (Icm) |
115A |
Td (on/off) @ 25°C |
23ns/97ns |
Switching Energy |
550μJ (on), 500μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
ROHS3 Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
IXYS IXXH30N60C3
In stock
Manufacturer |
IXYS |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AD |
Brand |
IXYS |
Factory Pack Quantity:Factory Pack Quantity |
30 |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Mfr |
IXYS |
Package |
Tube |
Product Status |
Active |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Packaging |
Bulk |
Series |
XPT™, GenX3™ |
Subcategory |
IGBTs |
Input Type |
Standard |
Power - Max |
270 W |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
60 A |
Test Condition |
400V, 24A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 24A |
Gate Charge |
37 nC |
Current - Collector Pulsed (Icm) |
110 A |
Td (on/off) @ 25°C |
23ns/77ns |
Switching Energy |
500µJ (on), 270µJ (off) |
Reverse Recovery Time (trr) |
33 ns |
Product Category |
IGBT Transistors |
IXYS IXXH30N60C3D1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2015 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 24A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Qualification Status |
Not Qualified |
Packaging |
Tube |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
270W |
Terminal Position |
SINGLE |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Mount |
Through Hole |
Factory Lead Time |
28 Weeks |
Turn On Time |
57 ns |
Case Connection |
COLLECTOR |
Power - Max |
270W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.3V |
Max Collector Current |
60A |
Reverse Recovery Time |
25 ns |
JEDEC-95 Code |
TO-247AD |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 24A |
Turn Off Time-Nom (toff) |
166 ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
IGBT Type |
PT |
Gate Charge |
37nC |
Current - Collector Pulsed (Icm) |
110A |
Td (on/off) @ 25°C |
23ns/77ns |
Switching Energy |
500μJ (on), 270μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Input Type |
Standard |
RoHS Status |
ROHS3 Compliant |
IXYS IXXH30N65B4
In stock
Manufacturer |
IXYS |
---|---|
Element Configuration |
Single |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 30A, 15 Ω, 15V |
Turn Off Delay Time |
170 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2013 |
Series |
GenX4™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
230W |
Factory Lead Time |
17 Weeks |
Input Type |
Standard |
Power Dissipation |
230W |
Turn On Delay Time |
32 ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
65A |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
IGBT Type |
PT |
Gate Charge |
52nC |
Current - Collector Pulsed (Icm) |
146A |
Td (on/off) @ 25°C |
32ns/170ns |
Switching Energy |
1.55mJ (on), 480μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |