Showing 1969–1980 of 3680 results
Transistors - IGBTs - Single
IXYS IXXH30N65B4D1
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
28 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current-Collector (Ic) (Max) |
70A |
Test Conditions |
400V, 30A, 15 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2016 |
Series |
XPT™, GenX4™ |
Part Status |
Active |
Reach Compliance Code |
compliant |
Input Type |
Standard |
Power - Max |
230W |
Reverse Recovery Time |
65ns |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
Gate Charge |
52nC |
Current - Collector Pulsed (Icm) |
146A |
Td (on/off) @ 25°C |
20ns/150ns |
Switching Energy |
1.04mJ (on), 730μJ (off) |
IXYS IXXH40N65B4H1
In stock
Manufacturer |
IXYS |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 40A, 5 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2014 |
Series |
GenX4™, XPT™ |
Part Status |
Active |
Factory Lead Time |
12 Weeks |
Input Type |
Standard |
Max Power Dissipation |
455W |
Power - Max |
455W |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
120A |
Reverse Recovery Time |
120 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
IGBT Type |
PT |
Gate Charge |
77nC |
Current - Collector Pulsed (Icm) |
240A |
Td (on/off) @ 25°C |
28ns/144ns |
Switching Energy |
1.4mJ (on), 560μJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXXH40N65C4D1
In stock
Manufacturer |
IXYS |
---|---|
Reach Compliance Code |
compliant |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current-Collector (Ic) (Max) |
110A |
Test Conditions |
400V, 40A, 5 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Series |
XPT™, GenX4™ |
Part Status |
Active |
Factory Lead Time |
28 Weeks |
Power - Max |
455W |
Input Type |
Standard |
Reverse Recovery Time |
62ns |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
IGBT Type |
PT |
Gate Charge |
68nC |
Current - Collector Pulsed (Icm) |
215A |
Td (on/off) @ 25°C |
20ns/100ns |
Switching Energy |
1.6mJ (on), 420μJ (off) |
IXYS IXXH50N60B3
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Operating Temperature (Max.) |
175°C |
JESD-30 Code |
R-PSFM-T3 |
Factory Lead Time |
28 Weeks |
Published |
2013 |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
600W |
Terminal Position |
SINGLE |
Pin Count |
3 |
Test Conditions |
360V, 36A, 5 Ω, 15V |
Qualification Status |
Not Qualified |
Turn On Time |
75 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 36A |
Input Type |
Standard |
Power - Max |
600W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
120A |
JEDEC-95 Code |
TO-247AD |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
320 ns |
IGBT Type |
PT |
Gate Charge |
70nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
27ns/100ns |
Switching Energy |
670μJ (on), 740μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
ROHS3 Compliant |
IXYS IXXH50N60B3D1
In stock
Manufacturer |
IXYS |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
360V, 36A, 5 Ω, 15V |
Packaging |
Tube |
Series |
GenX3™, XPT™ |
JESD-30 Code |
R-PSFM-T3 |
Factory Lead Time |
28 Weeks |
Number of Terminations |
3 |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
600W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Part Status |
Active |
Qualification Status |
Not Qualified |
Turn On Time |
75 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 36A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
120A |
Reverse Recovery Time |
25 ns |
JEDEC-95 Code |
TO-247AD |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation |
600W |
Turn Off Time-Nom (toff) |
320 ns |
IGBT Type |
PT |
Gate Charge |
70nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
27ns/100ns |
Switching Energy |
670μJ (on), 740μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
ROHS3 Compliant |
IXYS IXXH60N65B4H1
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
14 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 60A, 5 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2006 |
Series |
GenX4™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
380W |
Element Configuration |
Single |
Power Dissipation |
380W |
Input Type |
Standard |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
116A |
Reverse Recovery Time |
150ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
IGBT Type |
PT |
Gate Charge |
95nC |
Current - Collector Pulsed (Icm) |
230A |
Td (on/off) @ 25°C |
37ns/145ns |
Switching Energy |
3.13mJ (on), 1.15mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
IXYS IXXH60N65C4
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
28 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 60A, 5 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2014 |
Series |
GenX4™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
455W |
Element Configuration |
Single |
Power Dissipation |
455W |
Input Type |
Standard |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
118A |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 60A |
IGBT Type |
PT |
Gate Charge |
94nC |
Current - Collector Pulsed (Icm) |
240A |
Td (on/off) @ 25°C |
37ns/133ns |
Switching Energy |
3.2mJ (on), 830μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
RoHS Status |
ROHS3 Compliant |
IXYS IXXH75N60B3
In stock
Manufacturer |
IXYS |
---|---|
Series |
XPT™, GenX3™ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
160A |
Number of Elements |
1 |
Test Conditions |
400V, 60A, 5 Ω, 15V |
Configuration |
SINGLE |
Factory Lead Time |
28 Weeks |
Part Status |
Active |
Number of Terminations |
3 |
Terminal Position |
SINGLE |
Reach Compliance Code |
compliant |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Operating Temperature |
-55°C~175°C TJ |
Case Connection |
COLLECTOR |
Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 60A |
Turn Off Time-Nom (toff) |
315 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
75ns |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Power Dissipation-Max (Abs) |
750W |
Turn On Time |
108 ns |
Input Type |
Standard |
Power - Max |
750W |
IGBT Type |
PT |
Gate Charge |
107nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
35ns/118ns |
Switching Energy |
1.7mJ (on), 1.5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
RoHS Compliant |
IXYS IXXH75N60B3D1
In stock
Manufacturer |
IXYS |
---|---|
Published |
2014 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 60A, 5 Ω, 15V |
JESD-30 Code |
R-PSFM-T3 |
Factory Lead Time |
28 Weeks |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
750W |
Terminal Position |
SINGLE |
Pin Count |
3 |
Packaging |
Tube |
Qualification Status |
Not Qualified |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
108 ns |
Input Type |
Standard |
Power - Max |
750W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.85V |
Max Collector Current |
160A |
Reverse Recovery Time |
25 ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 60A |
Turn Off Time-Nom (toff) |
315 ns |
IGBT Type |
PT |
Gate Charge |
107nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
35ns/118ns |
Switching Energy |
1.7mJ (on), 1.5mJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXXH80N65B4H1
In stock
Manufacturer |
IXYS |
---|---|
Max Power Dissipation |
625W |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 80A, 3 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2015 |
Series |
GenX4™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Factory Lead Time |
18 Weeks |
Power Dissipation |
625W |
Element Configuration |
Single |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
160A |
Reverse Recovery Time |
150ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 80A |
IGBT Type |
PT |
Gate Charge |
120nC |
Current - Collector Pulsed (Icm) |
430A |
Td (on/off) @ 25°C |
38ns/120ns |
Switching Energy |
3.77mJ (on), 1.2mJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXXK100N60C3H1
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA Variation |
Weight |
10.000011g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
360V, 70A, 2 Ω, 15V |
Base Part Number |
IXX*N60 |
Factory Lead Time |
20 Weeks |
Published |
2005 |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
695W |
Terminal Position |
SINGLE |
Reach Compliance Code |
unknown |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
3 |
Reverse Recovery Time |
140 ns |
Turn On Time |
95 ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation |
695W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
170A |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 70A |
Turn Off Time-Nom (toff) |
220 ns |
IGBT Type |
PT |
Gate Charge |
150nC |
Current - Collector Pulsed (Icm) |
340A |
Td (on/off) @ 25°C |
30ns/90ns |
Switching Energy |
2mJ (on), 950μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
ROHS3 Compliant |