Showing 1969–1980 of 3680 results

Transistors - IGBTs - Single

IXYS IXXH30N65B4D1

In stock

SKU: IXXH30N65B4D1-9
Manufacturer

IXYS

Factory Lead Time

28 Weeks

Mounting Type

Through Hole

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

70A

Test Conditions

400V, 30A, 15 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2016

Series

XPT™, GenX4™

Part Status

Active

Reach Compliance Code

compliant

Input Type

Standard

Power - Max

230W

Reverse Recovery Time

65ns

Voltage - Collector Emitter Breakdown (Max)

650V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 30A

Gate Charge

52nC

Current - Collector Pulsed (Icm)

146A

Td (on/off) @ 25°C

20ns/150ns

Switching Energy

1.04mJ (on), 730μJ (off)

IXYS IXXH40N65B4H1

In stock

SKU: IXXH40N65B4H1-9
Manufacturer

IXYS

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 40A, 5 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2014

Series

GenX4™, XPT™

Part Status

Active

Factory Lead Time

12 Weeks

Input Type

Standard

Max Power Dissipation

455W

Power - Max

455W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

120A

Reverse Recovery Time

120 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

IGBT Type

PT

Gate Charge

77nC

Current - Collector Pulsed (Icm)

240A

Td (on/off) @ 25°C

28ns/144ns

Switching Energy

1.4mJ (on), 560μJ (off)

RoHS Status

ROHS3 Compliant

IXYS IXXH40N65C4D1

In stock

SKU: IXXH40N65C4D1-9
Manufacturer

IXYS

Reach Compliance Code

compliant

Mounting Type

Through Hole

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

110A

Test Conditions

400V, 40A, 5 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Series

XPT™, GenX4™

Part Status

Active

Factory Lead Time

28 Weeks

Power - Max

455W

Input Type

Standard

Reverse Recovery Time

62ns

Voltage - Collector Emitter Breakdown (Max)

650V

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

IGBT Type

PT

Gate Charge

68nC

Current - Collector Pulsed (Icm)

215A

Td (on/off) @ 25°C

20ns/100ns

Switching Energy

1.6mJ (on), 420μJ (off)

IXYS IXXH50N60B3

In stock

SKU: IXXH50N60B3-9
Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature (Max.)

175°C

JESD-30 Code

R-PSFM-T3

Factory Lead Time

28 Weeks

Published

2013

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

600W

Terminal Position

SINGLE

Pin Count

3

Test Conditions

360V, 36A, 5 Ω, 15V

Qualification Status

Not Qualified

Turn On Time

75 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 36A

Input Type

Standard

Power - Max

600W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

120A

JEDEC-95 Code

TO-247AD

Configuration

SINGLE

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

320 ns

IGBT Type

PT

Gate Charge

70nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

27ns/100ns

Switching Energy

670μJ (on), 740μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

IXYS IXXH50N60B3D1

In stock

SKU: IXXH50N60B3D1-9
Manufacturer

IXYS

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

360V, 36A, 5 Ω, 15V

Packaging

Tube

Series

GenX3™, XPT™

JESD-30 Code

R-PSFM-T3

Factory Lead Time

28 Weeks

Number of Terminations

3

Max Operating Temperature

175°C

Min Operating Temperature

-55°C

Max Power Dissipation

600W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Part Status

Active

Qualification Status

Not Qualified

Turn On Time

75 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 36A

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

120A

Reverse Recovery Time

25 ns

JEDEC-95 Code

TO-247AD

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

600W

Turn Off Time-Nom (toff)

320 ns

IGBT Type

PT

Gate Charge

70nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

27ns/100ns

Switching Energy

670μJ (on), 740μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

IXYS IXXH60N60B4

In stock

SKU: IXXH60N60B4-9
Manufacturer

IXYS

Tradename

XPT

Packaging

Tube

Series

IXXH60N60

IXYS IXXH60N65B4H1

In stock

SKU: IXXH60N65B4H1-9
Manufacturer

IXYS

Factory Lead Time

14 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 60A, 5 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2006

Series

GenX4™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

380W

Element Configuration

Single

Power Dissipation

380W

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

116A

Reverse Recovery Time

150ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 60A

IGBT Type

PT

Gate Charge

95nC

Current - Collector Pulsed (Icm)

230A

Td (on/off) @ 25°C

37ns/145ns

Switching Energy

3.13mJ (on), 1.15mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

IXYS IXXH60N65C4

In stock

SKU: IXXH60N65C4-9
Manufacturer

IXYS

Factory Lead Time

28 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 60A, 5 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2014

Series

GenX4™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

455W

Element Configuration

Single

Power Dissipation

455W

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

118A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 60A

IGBT Type

PT

Gate Charge

94nC

Current - Collector Pulsed (Icm)

240A

Td (on/off) @ 25°C

37ns/133ns

Switching Energy

3.2mJ (on), 830μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

ROHS3 Compliant

IXYS IXXH75N60B3

In stock

SKU: IXXH75N60B3-9
Manufacturer

IXYS

Series

XPT™, GenX3™

Mounting Type

Through Hole

Package / Case

TO-247-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

160A

Number of Elements

1

Test Conditions

400V, 60A, 5 Ω, 15V

Configuration

SINGLE

Factory Lead Time

28 Weeks

Part Status

Active

Number of Terminations

3

Terminal Position

SINGLE

Reach Compliance Code

compliant

Pin Count

3

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Operating Temperature

-55°C~175°C TJ

Case Connection

COLLECTOR

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 60A

Turn Off Time-Nom (toff)

315 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

75ns

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

600V

Power Dissipation-Max (Abs)

750W

Turn On Time

108 ns

Input Type

Standard

Power - Max

750W

IGBT Type

PT

Gate Charge

107nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

35ns/118ns

Switching Energy

1.7mJ (on), 1.5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

RoHS Compliant

IXYS IXXH75N60B3D1

In stock

SKU: IXXH75N60B3D1-9
Manufacturer

IXYS

Published

2014

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 60A, 5 Ω, 15V

JESD-30 Code

R-PSFM-T3

Factory Lead Time

28 Weeks

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

750W

Terminal Position

SINGLE

Pin Count

3

Packaging

Tube

Qualification Status

Not Qualified

JEDEC-95 Code

TO-247AD

Turn On Time

108 ns

Input Type

Standard

Power - Max

750W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.85V

Max Collector Current

160A

Reverse Recovery Time

25 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 60A

Turn Off Time-Nom (toff)

315 ns

IGBT Type

PT

Gate Charge

107nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

35ns/118ns

Switching Energy

1.7mJ (on), 1.5mJ (off)

RoHS Status

ROHS3 Compliant

IXYS IXXH80N65B4H1

In stock

SKU: IXXH80N65B4H1-9
Manufacturer

IXYS

Max Power Dissipation

625W

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 80A, 3 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2015

Series

GenX4™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Factory Lead Time

18 Weeks

Power Dissipation

625W

Element Configuration

Single

Input Type

Standard

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

160A

Reverse Recovery Time

150ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 80A

IGBT Type

PT

Gate Charge

120nC

Current - Collector Pulsed (Icm)

430A

Td (on/off) @ 25°C

38ns/120ns

Switching Energy

3.77mJ (on), 1.2mJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXXK100N60C3H1

In stock

SKU: IXXK100N60C3H1-9
Manufacturer

IXYS

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA Variation

Weight

10.000011g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

360V, 70A, 2 Ω, 15V

Base Part Number

IXX*N60

Factory Lead Time

20 Weeks

Published

2005

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

AVALANCHE RATED

Max Power Dissipation

695W

Terminal Position

SINGLE

Reach Compliance Code

unknown

Operating Temperature

-55°C~150°C TJ

Pin Count

3

Reverse Recovery Time

140 ns

Turn On Time

95 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

695W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

170A

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 70A

Turn Off Time-Nom (toff)

220 ns

IGBT Type

PT

Gate Charge

150nC

Current - Collector Pulsed (Icm)

340A

Td (on/off) @ 25°C

30ns/90ns

Switching Energy

2mJ (on), 950μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant