Showing 1981–1992 of 3680 results
Transistors - IGBTs - Single
IXYS IXXK160N65C4
In stock
Manufacturer |
IXYS |
---|---|
Element Configuration |
Single |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 80A, 1 Ω, 15V |
Turn Off Delay Time |
197 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2013 |
Series |
GenX4™, XPT™ |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
940W |
Base Part Number |
160N65 |
Mount |
Through Hole |
Input Type |
Standard |
Power Dissipation |
940W |
Turn On Delay Time |
52 ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
290A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 160A |
IGBT Type |
PT |
Gate Charge |
422nC |
Current - Collector Pulsed (Icm) |
800A |
Td (on/off) @ 25°C |
52ns/197ns |
Switching Energy |
3.5mJ (on), 1.3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXXK200N60C3
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
360V, 100A, 1 Ω, 15V |
Pin Count |
3 |
Factory Lead Time |
28 Weeks |
Published |
2013 |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
1.63kW |
Reach Compliance Code |
unknown |
Operating Temperature |
-55°C~175°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Turn On Time |
143 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
1630W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
340A |
Element Configuration |
Single |
Power Dissipation |
1.63kW |
Turn Off Time-Nom (toff) |
240 ns |
IGBT Type |
PT |
Gate Charge |
315nC |
Current - Collector Pulsed (Icm) |
900A |
Td (on/off) @ 25°C |
47ns/125ns |
Switching Energy |
3mJ (on), 1.7mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
RoHS Status |
ROHS3 Compliant |
IXYS IXXK300N60B3
In stock
Manufacturer |
IXYS |
---|---|
Published |
2012 |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 100A, 1 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Reach Compliance Code |
not_compliant |
Packaging |
Tube |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
AVALANCHE RATED |
Max Power Dissipation |
2.3kW |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
28 Weeks |
Turn On Time |
137 ns |
JESD-30 Code |
R-PSFM-T3 |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
2300W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.6V |
Max Collector Current |
550A |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 100A |
Turn Off Time-Nom (toff) |
430 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
IGBT Type |
PT |
Gate Charge |
460nC |
Current - Collector Pulsed (Icm) |
1140A |
Td (on/off) @ 25°C |
50ns/190ns |
Switching Energy |
3.45mJ (on), 2.86mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Configuration |
SINGLE |
RoHS Status |
ROHS3 Compliant |
IXYS IXXK300N60C3
In stock
Manufacturer |
IXYS |
---|---|
Max Power Dissipation |
2.3kW |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 100A, 1 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2012 |
Series |
GenX3™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Factory Lead Time |
28 Weeks |
Power - Max |
2300W |
Input Type |
Standard |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
510A |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 100A |
IGBT Type |
PT |
Gate Charge |
438nC |
Current - Collector Pulsed (Icm) |
1075A |
Td (on/off) @ 25°C |
50ns/160ns |
Switching Energy |
3.35mJ (on), 1.9mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
ROHS3 Compliant |
IXYS IXXN340N65B4
In stock
Manufacturer |
IXYS |
---|---|
Reach Compliance Code |
compliant |
Mounting Type |
Chassis Mount |
Package / Case |
SOT-227-4, miniBLOC |
Current-Collector (Ic) (Max) |
520A |
Test Conditions |
400V, 100A, 1 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Series |
GenX4™, XPT™ |
Part Status |
Active |
Factory Lead Time |
28 Weeks |
Power - Max |
1500W |
Input Type |
Standard |
Reverse Recovery Time |
65ns |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 160A |
IGBT Type |
PT |
Gate Charge |
553nC |
Current - Collector Pulsed (Icm) |
1200A |
Td (on/off) @ 25°C |
62ns/245ns |
Switching Energy |
4.4mJ (on), 2.2mJ (off) |
IXYS IXXP50N60B3
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
120A |
Number of Elements |
1 |
Test Conditions |
360V, 36A, 5 Ω, 15V |
Qualification Status |
Not Qualified |
Factory Lead Time |
24 Weeks |
Series |
XPT™, GenX3™ |
Part Status |
Active |
Number of Terminations |
3 |
Terminal Position |
SINGLE |
Reach Compliance Code |
compliant |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Operating Temperature |
-55°C~175°C TJ |
Configuration |
SINGLE |
Turn On Time |
75 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 36A |
Power - Max |
600W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
40ns |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Power Dissipation-Max (Abs) |
600W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn Off Time-Nom (toff) |
320 ns |
Gate Charge |
70nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
27ns/150ns |
Switching Energy |
670μJ (on), 1.2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
RoHS Status |
RoHS Compliant |
IXYS IXXR110N65B4H1
In stock
Manufacturer |
IXYS |
---|---|
Max Power Dissipation |
455W |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 55A, 2 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2013 |
Series |
GenX4™, XPT™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Factory Lead Time |
14 Weeks |
Element Configuration |
Single |
Base Part Number |
110N65 |
Power Dissipation |
455W |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
2.2V |
Max Collector Current |
150A |
Reverse Recovery Time |
100ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 110A |
IGBT Type |
PT |
Gate Charge |
183nC |
Current - Collector Pulsed (Icm) |
460A |
Td (on/off) @ 25°C |
38ns/156ns |
Switching Energy |
2.2mJ (on), 1.05mJ (off) |
RoHS Status |
ROHS3 Compliant |
IXYS IXXX110N65B4H1
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 55A, 2 Ω, 15V |
Turn Off Delay Time |
146 ns |
Reach Compliance Code |
not_compliant |
Factory Lead Time |
18 Weeks |
Published |
2013 |
Series |
GenX4™, XPT™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
880W |
Operating Temperature |
-55°C~175°C TJ |
Base Part Number |
110N65 |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 110A |
IGBT Type |
PT |
Input Type |
Standard |
Turn On Delay Time |
26 ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
240A |
Reverse Recovery Time |
100 ns |
Element Configuration |
Single |
Power Dissipation |
880W |
Gate Charge |
183nC |
Current - Collector Pulsed (Icm) |
630A |
Td (on/off) @ 25°C |
38ns/156ns |
Switching Energy |
2.2mJ (on), 1.05mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXXX160N65C4
In stock
Manufacturer |
IXYS |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 80A, 1 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2013 |
Series |
GenX4™, XPT™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
940W |
Base Part Number |
160N65 |
Element Configuration |
Single |
Power Dissipation |
940W |
Input Type |
Standard |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
290A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 160A |
IGBT Type |
PT |
Gate Charge |
422nC |
Current - Collector Pulsed (Icm) |
800A |
Td (on/off) @ 25°C |
52ns/197ns |
Switching Energy |
3.5mJ (on), 1.3mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
RoHS Status |
ROHS3 Compliant |
IXYS IXXX200N60B3
In stock
Manufacturer |
IXYS |
---|---|
Pin Count |
3 |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
380A |
Number of Elements |
1 |
Test Conditions |
360V, 100A, 1 Ω, 15V |
Packaging |
Tube |
Series |
XPT™, GenX3™ |
Operating Temperature |
-55°C~175°C TJ |
JESD-609 Code |
e3 |
Part Status |
Active |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
AVALANCHE RATED |
Terminal Position |
SINGLE |
Reach Compliance Code |
not_compliant |
Mounting Type |
Through Hole |
Factory Lead Time |
28 Weeks |
Turn On Time |
140 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 100A |
Input Type |
Standard |
Power - Max |
1630W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
100ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Power Dissipation-Max (Abs) |
1630W |
Configuration |
SINGLE |
JESD-30 Code |
R-PSIP-T3 |
Turn Off Time-Nom (toff) |
395 ns |
Gate Charge |
315nC |
Current - Collector Pulsed (Icm) |
900A |
Td (on/off) @ 25°C |
48ns/160ns |
Switching Energy |
2.85mJ (on), 4.4mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Case Connection |
COLLECTOR |
RoHS Status |
RoHS Compliant |
IXYS IXXX200N60C3
In stock
Manufacturer |
IXYS |
---|---|
Pin Count |
3 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
360V, 100A, 1 Ω, 15V |
Packaging |
Tube |
Published |
2013 |
Operating Temperature |
-55°C~175°C TJ |
Series |
XPT™, GenX3™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
AVALANCHE RATED |
Terminal Position |
SINGLE |
Reach Compliance Code |
unknown |
Mount |
Through Hole |
Factory Lead Time |
28 Weeks |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
Turn Off Time-Nom (toff) |
240 ns |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
340A |
Power Dissipation-Max (Abs) |
1630W |
Turn On Time |
143 ns |
Configuration |
SINGLE |
JESD-30 Code |
R-PSFM-T3 |
IGBT Type |
PT |
Gate Charge |
315nC |
Current - Collector Pulsed (Icm) |
900A |
Td (on/off) @ 25°C |
47ns/125ns |
Switching Energy |
3mJ (on), 1.7mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Case Connection |
COLLECTOR |
RoHS Status |
ROHS3 Compliant |