Showing 2389–2400 of 3680 results
Transistors - IGBTs - Single
Micro Commercial Co MIW30N65FA-BP
In stock
Manufacturer |
Micro Commercial Co |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AB |
Mounting Style |
Through Hole |
Base Product Number |
MIW30N65 |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Micro Commercial Co |
Minimum Operating Temperature |
– 40 C |
Package |
Tube |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Input Type |
Standard |
Power - Max |
187 W |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Current - Collector (Ic) (Max) |
60 A |
Test Condition |
300V, 30A, 33Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 30A |
Continuous Collector Current |
30 A |
IGBT Type |
Trench Field Stop |
Gate Charge |
150 nC |
Current - Collector Pulsed (Icm) |
120 A |
Td (on/off) @ 25°C |
37ns/113ns |
Switching Energy |
870μJ (on), 260μJ (off) |
Product Category |
IGBT Transistors |
Micro Commercial Co MIW30N65FLA-BP
In stock
Manufacturer |
+ 175 C |
---|---|
Number of Elements |
Single |
Mounting Type |
TO-247-3 |
Surface Mount |
TO-247AB |
Transistor Element Material |
Through Hole |
Maximum Operating Temperature |
Micro Commercial Co |
Mfr |
– 40 C |
Operating Temperature Classification |
Tube |
Package Type |
Active |
Rad Hardened |
Details |
Tradename |
-40°C ~ 175°C (TJ) |
ECCN Code |
IGBTs |
Subcategory |
Si |
Factory Lead Time |
Through Hole |
Input Type |
187 W |
Case Connection |
Standard |
Polarity/Channel Type |
IGBT Transistors |
JEDEC-95 Code |
650 V |
Voltage - Collector Emitter Breakdown (Max) |
60 A |
Channel Type |
300V, 30A, 33Ohm, 15V |
Test Condition |
2.1V @ 15V, 30A |
Collector Current-Max (IC) |
30 A |
Continuous Collector Current |
Trench Field Stop |
Collector-Emitter Voltage-Max |
150 nC |
Gate Charge |
120 A |
Current - Collector Pulsed (Icm) |
40ns/120ns |
Td (on/off) @ 25°C |
920μJ (on), 450μJ (off) |
Reverse Recovery Time (trr) |
IGBT Transistors |
Micro Commercial Co MIW40N120-BP
In stock
Manufacturer |
Micro Commercial Co |
---|---|
Minimum Operating Temperature |
– 55 C |
Input Type |
Standard |
Configuration |
Single |
Technology |
Si |
Subcategory |
IGBTs |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Product Status |
Active |
Power - Max |
277 W |
Package |
Tube |
Mfr |
Micro Commercial Co |
Maximum Operating Temperature |
+ 150 C |
Base Product Number |
MIW40 |
Mounting Style |
Through Hole |
Supplier Device Package |
TO-247-3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Operating Temperature Range |
– 55 C to + 150 C |
Current - Collector Pulsed (Icm) |
160 A |
Length |
16.2 mm |
Height |
22 mm |
Product Category |
IGBT Transistors |
Reverse Recovery Time (trr) |
80 ns |
Switching Energy |
3.3mJ (on), 1.4mJ (off) |
Td (on/off) @ 25°C |
62ns/265ns |
Gate Charge |
239 nC |
Product Type |
IGBT Transistors |
IGBT Type |
Trench Field Stop |
Continuous Collector Current |
40 A |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
Test Condition |
600V, 40A, 10Ohm, 15V |
Current - Collector (Ic) (Max) |
80 A |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Width |
5.3 mm |
Micro Commercial Co MIW40N120FLA-BP
In stock
Manufacturer |
Micro Commercial Co |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AB |
Mounting Style |
Through Hole |
Base Product Number |
MIW40 |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Micro Commercial Co |
Minimum Operating Temperature |
– 40 C |
Package |
Tube |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Input Type |
Standard |
Power - Max |
428 W |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Current - Collector (Ic) (Max) |
80 A |
Test Condition |
600V, 40A, 12Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
Continuous Collector Current |
40 A |
IGBT Type |
Trench Field Stop |
Gate Charge |
330 nC |
Current - Collector Pulsed (Icm) |
160 A |
Td (on/off) @ 25°C |
45ns/180ns |
Switching Energy |
3.8mJ (on), 1.7mJ (off) |
Product Category |
IGBT Transistors |
Micro Commercial Co MIW40N65-BP
In stock
Manufacturer |
Micro Commercial Co |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247-3 |
Maximum Operating Temperature |
Micro Commercial Co |
Minimum Operating Temperature |
Tube |
Package Type |
Last Time Buy |
Configuration |
Standard |
Input Type |
280 W |
Operating Temperature Range |
650 V |
Voltage - Collector Emitter Breakdown (Max) |
80 A |
Current - Collector (Ic) (Max) |
600V, 40A, 10Ohm, 15V |
Test Condition |
2.4V @ 15V, 40A |
Continuous Collector Current |
Trench Field Stop |
IGBT Type |
165 nC |
Gate Charge |
120 A |
Current - Collector Pulsed (Icm) |
62ns/265ns |
Td (on/off) @ 25°C |
3.3mJ (on), 1.4mJ (off) |
Switching Energy |
41 ns |
Micro Commercial Co MIW40N65RA-BP
In stock
Manufacturer |
Micro Commercial Co |
---|---|
Factory Lead Time |
Through Hole |
Mounting Type |
TO-247-3 |
Surface Mount |
TO-247AB |
Maximum Operating Temperature |
Micro Commercial Co |
Operating Temperature Classification |
Tube |
Package Type |
Active |
Rad Hardened |
Details |
Tradename |
-40°C ~ 175°C (TJ) |
Case Connection |
Standard |
Input Type |
306 W |
JEDEC-95 Code |
650 V |
Voltage - Collector Emitter Breakdown (Max) |
80 A |
Channel Type |
400V, 40A, 10Ohm, 15V |
Test Condition |
2.4V @ 15V, 40A |
Continuous Collector Current |
Trench Field Stop |
Collector-Emitter Voltage-Max |
160 nC |
Gate Charge |
160 A |
Current - Collector Pulsed (Icm) |
12ns/124ns |
Td (on/off) @ 25°C |
1.5mJ (on), 590μJ (off) |
Reverse Recovery Time (trr) |
MCC |
Micro Commercial Co MIW50N65F-BP
In stock
Manufacturer |
Micro Commercial Co |
---|---|
Technology |
Si |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AB |
Mounting Style |
Through Hole |
Base Product Number |
MIW50N65 |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Micro Commercial Co |
Minimum Operating Temperature |
– 40 C |
Package |
Tube |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Packaging |
Bulk |
Subcategory |
IGBTs |
Mounting Type |
Through Hole |
Input Type |
Standard |
Configuration |
Single |
Power - Max |
326 W |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Current - Collector (Ic) (Max) |
85 A |
Test Condition |
300V, 50A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 50A |
Continuous Collector Current |
50 A |
IGBT Type |
Trench Field Stop |
Gate Charge |
450 nC |
Current - Collector Pulsed (Icm) |
200 A |
Td (on/off) @ 25°C |
55ns/319ns |
Switching Energy |
1.27mJ (on), 650μJ (off) |
Product Category |
IGBT Transistors |
Micro Commercial Co MIW50N65H-BP
In stock
Manufacturer |
Micro Commercial Co |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Surface Mount |
TO-247-3 |
Maximum Operating Temperature |
Micro Commercial Co |
Minimum Operating Temperature |
Bulk |
Package Type |
Last Time Buy |
Power Dissipation |
Standard |
Input Type |
250 W |
JEDEC-95 Code |
650 V |
Voltage - Collector Emitter Breakdown (Max) |
80 A |
Power Dissipation-Max (Abs) |
400V, 50A, 10Ohm, 15V |
Test Condition |
1.9V @ 15V, 50A |
Continuous Collector Current |
Trench Field Stop |
Collector-Emitter Voltage-Max |
186 nC |
Gate Charge |
200 A |
Current - Collector Pulsed (Icm) |
69ns/404ns |
Td (on/off) @ 25°C |
1.59mJ (on), 1.34mJ (off) |
Gate-Emitter Thr Voltage-Max |
88 ns |
Micro Commercial Components (MCC) MIW40N120F-BP
In stock
Manufacturer |
Micro Commercial Components (MCC) |
---|---|
Series |
MIW |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247-3 |
Mounting Style |
Through Hole |
Base Product Number |
MIW40 |
Maximum Operating Temperature |
+ 150 C |
Mfr |
Micro Commercial Co |
Minimum Operating Temperature |
– 55 C |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Packaging |
Bulk |
Mounting Type |
Through Hole |
Input Type |
Standard |
Configuration |
Single |
Power - Max |
277 W |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Current - Collector (Ic) (Max) |
80 A |
Test Condition |
600V, 40A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 40A |
Continuous Collector Current |
40 A |
IGBT Type |
Trench Field Stop |
Gate Charge |
240 nC |
Current - Collector Pulsed (Icm) |
160 A |
Td (on/off) @ 25°C |
160ns/237ns |
Switching Energy |
5.02mJ (on), 2.72mJ (off) |
Reverse Recovery Time (trr) |
367 ns |
Micro Commercial Components (MCC) MIWP75N120-BP
In stock
Manufacturer |
Micro Commercial Components (MCC) |
---|---|
Series |
MIW |
Package / Case |
TO-247P-3 |
Supplier Device Package |
TO-247-3 |
Mounting Style |
Through Hole |
Base Product Number |
MIWP75 |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Micro Commercial Co |
Minimum Operating Temperature |
– 55 C |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Packaging |
Bulk |
Mounting Type |
Through Hole |
Input Type |
Standard |
Configuration |
Single |
Power - Max |
789 W |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Current - Collector (Ic) (Max) |
150 A |
Test Condition |
600V, 75A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 75A |
Continuous Collector Current |
75 A |
IGBT Type |
Trench Field Stop |
Gate Charge |
622 nC |
Current - Collector Pulsed (Icm) |
300 A |
Td (on/off) @ 25°C |
112ns/478ns |
Switching Energy |
11.3mJ (on), 4.7mJ (off) |
Reverse Recovery Time (trr) |
293 ns |
Micro Commercial Components MIW75N65F-BP
In stock
Manufacturer |
Micro Commercial Components |
---|---|
Product Status |
Active |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247-3 |
Mounting Style |
Through Hole |
Base Product Number |
MIW75 |
Collector- Emitter Voltage VCEO Max |
650 V |
Maximum Gate Emitter Voltage |
– 30 V, 30 V |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Micro Commercial Co |
Minimum Operating Temperature |
– 40 C |
Package |
Bulk |
Pd - Power Dissipation |
395 W |
Mounting Type |
Through Hole |
Technology |
Si |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Configuration |
Single |
Input Type |
Standard |
Power - Max |
395 W |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Current - Collector (Ic) (Max) |
75 A |
Test Condition |
400V, 75A, 8Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 75A |
IGBT Type |
Trench Field Stop |
Gate Charge |
130 nC |
Current - Collector Pulsed (Icm) |
300 A |
Td (on/off) @ 25°C |
34ns/183ns |
Switching Energy |
2.64mJ (on), 920µJ (off) |
Microchip APT100GT60B2RG
In stock
Manufacturer |
IDEC |
---|---|
Max Power Dissipation |
500 W |
Package / Case |
TO-247-3 Variant |
Surface Mount |
NO |
Number of Pins |
3 |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Base Product Number |
APT100 |
Ihs Manufacturer |
MICROSEMI CORP |
Manufacturer Part Number |
ARN3-2220-11.11.11.00 |
Mfr |
Microchip Technology |
Operating Temperature-Max |
150 °C |
Package |
Tube |
Package Body Material |
PLASTIC/EPOXY |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Package Description |
FLANGE MOUNT, R-PSFM-T3 |
Part Life Cycle Code |
Active |
Part Package Code |
TO-247 |
Product Status |
Active |
Risk Rank |
5.03 |
Rohs Code |
Yes |
Turn-off Time-Nom (toff) |
450 ns |
Turn-on Time-Nom (ton) |
115 ns |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Series |
Thunderbolt IGBT® |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Additional Feature |
HIGH RELIABILITY |
Subcategory |
Insulated Gate BIP Transistors |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Collector Emitter Breakdown Voltage |
600 V |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Configuration |
SINGLE |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
500 W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600 V |
Max Collector Current |
148 A |
JEDEC-95 Code |
TO-247 |
Terminal Form |
THROUGH-HOLE |
Terminal Position |
SINGLE |
Current - Collector (Ic) (Max) |
148 A |
Power Dissipation-Max (Abs) |
500 W |
Test Condition |
400V, 100A, 4.3Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 100A |
Collector Current-Max (IC) |
148 A |
IGBT Type |
NPT |
Collector-Emitter Voltage-Max |
600 V |
Gate Charge |
460 nC |
Current - Collector Pulsed (Icm) |
300 A |
Td (on/off) @ 25°C |
40ns/320ns |
Switching Energy |
3.25mJ (on), 3.125mJ (off) |
Gate-Emitter Voltage-Max |
30 V |
Gate-Emitter Thr Voltage-Max |
5 V |
Reach Compliance Code |
compliant |
Radiation Hardening |
No |