Showing 2413–2424 of 3680 results
Transistors - IGBTs - Single
Microchip APT20GN60SDQ2G
In stock
Manufacturer |
Microchip |
---|---|
Termination |
Solder |
Package / Case |
D3PAK-3 |
Mounting Feature |
Flange |
Shell Material |
Aluminum |
Supplier Device Package |
D3PAK |
Mounting Style |
SMD/SMT |
Base Product Number |
APT20GN60 |
Brand |
Microchip Technology / Atmel |
Collector- Emitter Voltage VCEO Max |
600 V |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Maximum Operating Temperature |
+ 175 C |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Mfr |
Glenair |
Minimum Operating Temperature |
– 55 C |
Package |
Retail Package |
Pd - Power Dissipation |
136 W |
Primary Material |
Metal |
Product Status |
Active |
Operating Temperature |
-65°C ~ 175°C |
Packaging |
Tube |
Series |
806 |
Mounting Type |
Panel Mount, Through Hole |
Contact Material |
Copper Alloy |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
40 A |
Subcategory |
IGBTs |
Contact Finish - Mating |
Gold |
Orientation |
F |
Shell Finish |
Olive Drab Cadmium |
Shell Size - Insert |
24-8 |
Configuration |
Single |
Input Type |
Standard |
Power - Max |
136 W |
Product Type |
IGBT Transistors |
Color |
Olive Drab |
Connector Type |
Receptacle, Female Sockets |
Test Condition |
400V, 20A, 4.3Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 20A |
IGBT Type |
Trench Field Stop |
Gate Charge |
120 nC |
Current - Collector Pulsed (Icm) |
60 A |
Td (on/off) @ 25°C |
9ns/140ns |
Switching Energy |
230µJ (on), 580µJ (off) |
Reverse Recovery Time (trr) |
30 ns |
Features |
Ground |
Fastening Type |
Threaded |
Product Category |
IGBT Transistors |
Microchip APT20GS60BRDQ1G
In stock
Manufacturer |
TE Connectivity |
---|---|
Min Operating Temperature |
-55 °C |
Mount |
Through Hole |
Housing Material |
Nylon |
Brand |
TE Connectivity / AMP |
Factory Pack Quantity:Factory Pack Quantity |
32 |
Latching Type |
Ejection |
Tradename |
AMP-LATCH |
Packaging |
Bulk |
Series |
AMP-LATCH |
Type |
Universal Ejection Pin |
Number of Positions |
34 Position |
Max Operating Temperature |
150 °C |
Contact Plating |
Gold |
Pitch |
2.54 mm |
Subcategory |
Headers & Wire Housings |
Contact Gender |
Pin (Male) |
Housing Color |
Black |
Row Spacing |
2.54 mm |
Element Configuration |
Single |
Product Type |
Headers & Wire Housings |
Collector Emitter Voltage (VCEO) |
600 V |
Max Collector Current |
37 A |
Termination Post Length |
3.94 mm |
Mounting Angle |
Right Angle |
Product Category |
Headers & Wire Housings |
Radiation Hardening |
No |
Flammability Rating |
UL 94 V-0 |
Microchip APT20GT60BRG
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Package Style |
FLANGE MOUNT |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Supplier Device Package |
TO-247 [B] |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Base Product Number |
APT20GT60 |
Part Life Cycle Code |
Active |
Manufacturer Part Number |
APT20GT60BRG |
Mfr |
Microchip Technology |
Operating Temperature-Max |
150 °C |
Package |
Tube |
Package Body Material |
PLASTIC/EPOXY |
Package Description |
ROHS COMPLIANT, TO-247, 3 PIN |
Package Shape |
RECTANGULAR |
Subcategory |
Insulated Gate BIP Transistors |
Mount |
Through Hole |
Voltage Rating (DC) |
600 V |
Product Status |
Active |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.14 |
Rohs Code |
Yes |
Turn-off Time-Nom (toff) |
160 ns |
Turn-on Time-Nom (ton) |
17 ns |
Part Package Code |
TO-247AD |
Series |
Thunderbolt IGBT® |
Operating Temperature |
-55°C ~ 150°C (TJ) |
JESD-609 Code |
e1 |
Pbfree Code |
Yes |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Ihs Manufacturer |
MICROSEMI CORP |
Max Power Dissipation |
174 W |
Configuration |
SINGLE |
Max Collector Current |
43 A |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Current Rating |
43 A |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
JEDEC-95 Code |
TO-247AD |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
174 W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600 V |
Terminal Position |
SINGLE |
Terminal Form |
THROUGH-HOLE |
IGBT Type |
NPT |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
43 A |
Power Dissipation-Max (Abs) |
174 W |
Test Condition |
400V, 20A, 5Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Collector Current-Max (IC) |
43 A |
Collector Emitter Breakdown Voltage |
600 V |
Gate Charge |
100 nC |
Collector-Emitter Voltage-Max |
600 V |
Current - Collector Pulsed (Icm) |
80 A |
Td (on/off) @ 25°C |
8ns/80ns |
Switching Energy |
215µJ (on), 245µJ (off) |
Gate-Emitter Voltage-Max |
30 V |
Gate-Emitter Thr Voltage-Max |
5 V |
Radiation Hardening |
No |
Lead Free |
Lead Free |
Microchip APT25GR120BSCD10
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Contact Material |
Copper Alloy |
Contact Plating |
50 microinches Gold Plate |
Surface Mount |
NO |
Shell Material |
Aluminum Alloy |
Insert Material |
Hard Dielectric |
Ihs Manufacturer |
MICROSEMI CORP |
Insert Arrangement |
D15 |
Manufacturer Part Number |
APT25GR120BSCD10 |
Operating Temperature-Max |
150 °C |
Part Life Cycle Code |
Obsolete |
Risk Rank |
5.82 |
Rohs Code |
Yes |
Service Rating |
I |
Subcategory |
Insulated Gate BIP Transistors |
Shielding |
Yes |
Reach Compliance Code |
compliant |
Contact Style |
Socket |
Contact Size |
14#20,1#16 |
Sealing |
Meets IP67 |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation-Max (Abs) |
521 W |
Collector Current-Max (IC) |
75 A |
Shell Plating |
Nickel-PTFE (Durmalon) |
Collector-Emitter Voltage-Max |
1200 V |
Gate-Emitter Voltage-Max |
30 V |
Gate-Emitter Thr Voltage-Max |
6.5 V |
Microchip APT30GP60B2DLG
In stock
Manufacturer |
CTS |
---|---|
Mount |
Through Hole |
Number of Pins |
3 |
Brand |
CTS Electronic Components |
Factory Pack Quantity:Factory Pack Quantity |
1000 |
Maximum Operating Temperature |
+ 125 C |
Minimum Operating Temperature |
– 55 C |
Qualification |
AEC-Q200 |
Supply Voltage - Max |
5 V |
Supply Voltage - Min |
1.8 V |
Packaging |
Reel |
Series |
CA70 |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Subcategory |
Oscillators |
Max Power Dissipation |
463 W |
Frequency |
33.333 MHz |
Frequency Stability |
100 PPM |
Termination Style |
SMD/SMT |
Load Capacitance |
15 pF |
Element Configuration |
Single |
Product Type |
Standard Oscillators |
Collector Emitter Voltage (VCEO) |
600 V |
Max Collector Current |
100 A |
Collector Emitter Breakdown Voltage |
600 V |
Output Format |
HCMOS |
Product Category |
Standard Clock Oscillators |
Height |
1.8 mm |
Length |
7 mm |
Width |
5 mm |
Radiation Hardening |
No |
Microchip APT30GP60BG
In stock
Manufacturer |
ABB |
---|---|
Product Status |
Active |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247 [B] |
Mounting Style |
Through Hole |
Base Product Number |
APT30GP60 |
Collector- Emitter Voltage VCEO Max |
600 V |
Manufacturer Part Number |
MACN2-11-AT |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Maximum Operating Temperature |
+ 150 C |
Mfr |
Microchip Technology |
Minimum Operating Temperature |
– 55 C |
Package |
Tube |
Pd - Power Dissipation |
463 W |
Mounting Type |
Through Hole |
Series |
POWER MOS 7® |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Technology |
Si |
Configuration |
Single |
Input Type |
Standard |
Power - Max |
463 W |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
100 A |
Test Condition |
400V, 30A, 5Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 30A |
IGBT Type |
PT |
Gate Charge |
90 nC |
Current - Collector Pulsed (Icm) |
100 A |
Td (on/off) @ 25°C |
13ns/55ns |
Switching Energy |
260µJ (on), 250µJ (off) |
Microchip APT30GP60LDLG
In stock
Manufacturer |
CTS |
---|---|
Subcategory |
Oscillators |
Number of Pins |
3 |
Brand |
CTS Electronic Components |
Factory Pack Quantity:Factory Pack Quantity |
1000 |
Maximum Operating Temperature |
+ 125 C |
Minimum Operating Temperature |
– 55 C |
Qualification |
AEC-Q200 |
Supply Voltage - Max |
5 V |
Supply Voltage - Min |
1.8 V |
Packaging |
Reel |
Series |
CA70 |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Mount |
Through Hole |
Frequency |
48 MHz |
Max Power Dissipation |
463 W |
Frequency Stability |
100 PPM |
Termination Style |
SMD/SMT |
Load Capacitance |
15 pF |
Element Configuration |
Single |
Product Type |
Standard Oscillators |
Collector Emitter Voltage (VCEO) |
2.7 V |
Max Collector Current |
100 A |
Collector Emitter Breakdown Voltage |
600 V |
Output Format |
HCMOS |
Product Category |
Standard Clock Oscillators |
Height |
1.8 mm |
Length |
7 mm |
Width |
5 mm |
Microchip APT30GS60BRDQ2G
In stock
Manufacturer |
Microchip |
---|---|
Min Operating Temperature |
-55 °C |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247 [B] |
Mounting Style |
Through Hole |
Base Product Number |
APT30GS60 |
Brand |
Microchip Technology / Atmel |
Collector- Emitter Voltage VCEO Max |
600 V |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
Mfr |
Microchip Technology |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Package |
Tube |
Pd - Power Dissipation |
250 W |
Product Status |
Active |
Unit Weight |
0.208116 oz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Packaging |
Tube |
Series |
* |
Part Status |
Active |
Max Operating Temperature |
150 °C |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
54 A |
Configuration |
Single |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
250 W |
Product Type |
IGBT Transistors |
Collector Emitter Voltage (VCEO) |
600 V |
Max Collector Current |
54 A |
Reverse Recovery Time |
25 ns |
Collector Emitter Breakdown Voltage |
600 V |
Max Power Dissipation |
250 W |
Subcategory |
IGBTs |
Test Condition |
400V, 30A, 9.1Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
3.15V @ 15V, 30A |
IGBT Type |
NPT |
Gate Charge |
145 nC |
Current - Collector Pulsed (Icm) |
113 A |
Td (on/off) @ 25°C |
16ns/360ns |
Switching Energy |
570µJ (off) |
Reverse Recovery Time (trr) |
25 ns |
Product Category |
IGBT Transistors |
Technology |
Si |
Radiation Hardening |
No |