Showing 2425–2436 of 3680 results
Microchip APT30GT60KRG
In stock
| Manufacturer |
Microchip |
|---|---|
| Mount |
Through Hole |
| Voltage Rating (DC) |
600 V |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
250 W |
| Current Rating |
64 A |
| Element Configuration |
Single |
| Collector Emitter Voltage (VCEO) |
600 V |
| Max Collector Current |
64 A |
| Collector Emitter Breakdown Voltage |
600 V |
| Radiation Hardening |
No |
| Lead Free |
Lead Free |
Microchip APT33GF120BRG
In stock
| Manufacturer |
Microchip |
|---|---|
| Mounting Styles |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Supplier Device Package |
TO-247 [B] |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Base Product Number |
APT33GF120 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Current-Collector (Ic) (Max) |
52 A |
| Ihs Manufacturer |
MICROSEMI CORP |
| Manufacturer Part Number |
APT33GF120BRG |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Turn-off Time-Nom (toff) |
284 ns |
| Mounting Type |
Through Hole |
| Number of Elements |
1 |
| Operating Temperature-Max |
150 °C |
| Package |
Tube |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
TO-247, 3 PIN |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Active |
| Part Package Code |
TO-247AD |
| Pd - Power Dissipation |
297 W |
| Product Status |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
1.19 |
| Rohs Code |
Yes |
| Minimum Operating Temperature |
– 55 C |
| Turn-on Time-Nom (ton) |
85 ns |
| Power Dissipation |
297 |
| Case Connection |
COLLECTOR |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
FAST SWITCHING |
| Technology |
Si |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| JESD-609 Code |
e1 |
| Input Type |
Standard |
| Power - Max |
297 W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 25A |
| Collector Current-Max (IC) |
52 A |
| Continuous Collector Current |
52 |
| IGBT Type |
NPT |
| Collector-Emitter Voltage-Max |
1200 V |
| Gate Charge |
170 nC |
| Current - Collector Pulsed (Icm) |
104 A |
| Td (on/off) @ 25°C |
25ns/210ns |
| Switching Energy |
2.8mJ (on), 2.8mJ (off) |
Microchip APT35GN120SG
In stock
| Manufacturer |
Microchip |
|---|---|
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Package / Case |
1212 (3030 Metric) |
| Supplier Device Package |
1212 |
| Thermal Resistance of Package |
12°C/W |
| Base Product Number |
L130 |
| Brand |
Microchip Technology / Atmel |
| CCT(K) |
5000K |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
105 A |
| Current-Collector (Ic) (Max) |
94 A |
| Series |
LUXEON 3030 2D Line |
| Mounting Type |
Surface Mount |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Lumileds |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
SMD/SMT |
| Package |
Tape & Reel (TR) |
| Pd - Power Dissipation |
379 W |
| Product Status |
Active |
| Test Conditions |
800V, 35A, 2.2Ohm, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Color |
White, Cool |
| Current - Max |
240mA |
| Product Type |
IGBT Transistors |
| Configuration |
Single |
| Power Dissipation |
379 |
| Voltage - Forward (Vf) (Typ) |
6V |
| Viewing Angle |
116° |
| Input Type |
Standard |
| Power - Max |
379 W |
| Current - Test |
120mA |
| Lumens/Watt @ Current - Test |
149 lm/W |
| CRI (Color Rendering Index) |
90 |
| Subcategory |
IGBTs |
| Technology |
Si |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Flux @ 25°C, Current - Test |
107lm (Typ) |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 35A |
| Continuous Collector Current |
94 |
| IGBT Type |
NPT, Trench Field Stop |
| Gate Charge |
220 nC |
| Current - Collector Pulsed (Icm) |
105 A |
| Td (on/off) @ 25°C |
24ns/300ns |
| Switching Energy |
-, 2.315mJ (off) |
| Product Category |
IGBT Transistors |
| Height Seated (Max) |
0.030 (0.76mm) |
Microchip APT36GA60BD15
In stock
| Manufacturer |
Microchip |
|---|---|
| Mounting Style |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Supplier Device Package |
TO-247 [B] |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Minimum Operating Temperature |
– 55 C |
| Operating Temperature-Max |
150 °C |
| Base Product Number |
APT36GA60 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Ihs Manufacturer |
MICROSEMI CORP |
| Manufacturer Part Number |
APT36GA60BD15 |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Min Operating Temperature |
-55 °C |
| Mount |
Through Hole |
| Package |
Tube |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
FLANGE MOUNT, R-PSFM-T3 |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Active |
| Part Package Code |
TO-247 |
| Pd - Power Dissipation |
290 W |
| Product Status |
Active |
| Risk Rank |
2.17 |
| Rohs Code |
Yes |
| Turn-off Time-Nom (toff) |
262 ns |
| Turn-on Time-Nom (ton) |
29 ns |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 8™ |
| Max Operating Temperature |
150 °C |
| Brand |
Microchip Technology / Atmel |
| Additional Feature |
LOW CONDUCTION LOSS |
| Configuration |
Single |
| Qualification Status |
Not Qualified |
| Technology |
Si |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Collector Emitter Voltage (VCEO) |
600 V |
| Max Collector Current |
65 A |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
290 W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
IGBT Transistors |
| Subcategory |
IGBTs |
| Max Power Dissipation |
290 W |
| JEDEC-95 Code |
TO-247 |
| Collector Emitter Breakdown Voltage |
600 V |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
65 A |
| Power Dissipation-Max (Abs) |
290 W |
| Test Condition |
400V, 20A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| Collector Current-Max (IC) |
65 A |
| IGBT Type |
PT |
| Collector-Emitter Voltage-Max |
600 V |
| Gate Charge |
18 nC |
| Current - Collector Pulsed (Icm) |
109 A |
| Td (on/off) @ 25°C |
16ns/122ns |
| Switching Energy |
307µJ (on), 254µJ (off) |
| Gate-Emitter Voltage-Max |
30 V |
| Gate-Emitter Thr Voltage-Max |
6 V |
| Product Category |
IGBT Transistors |
| Radiation Hardening |
No |
Microchip APT40GP60BG
In stock
| Manufacturer |
Microchip |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT40GP60 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
POWER MOS 7® |
| Input Type |
Standard |
| Power - Max |
543 W |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
100 A |
| Test Condition |
400V, 40A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 40A |
| IGBT Type |
PT |
| Gate Charge |
135 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
20ns/64ns |
| Switching Energy |
385µJ (on), 352µJ (off) |
Microchip APT40GR120B
In stock
| Manufacturer |
Microchip |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
APT40GR120 |
| Brand |
Microchip Technology |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Power Dissipation |
500 |
| Input Type |
Standard |
| Power - Max |
500 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
88 A |
| Collector Emitter Saturation Voltage |
2.5 |
| Test Condition |
600V, 40A, 4.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
| Continuous Collector Current |
88 |
| IGBT Type |
NPT |
| Gate Charge |
210 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
22ns/163ns |
| Switching Energy |
1.38mJ (on), 906µJ (off) |
| Product Category |
IGBT Transistors |
Microchip APT50GN120B2G
In stock
| Manufacturer |
Microchip |
|---|---|
| Pitch - Mating |
0.100 (2.54mm) |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Number of Positions or Pins (Grid) |
32 (2 x 16) |
| Contact Material - Mating |
Beryllium Copper |
| Contact Material - Post |
Phosphor Bronze |
| Base Product Number |
APT50GN120 |
| Brand |
Microchip Technology |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Voltage Rating (DC) |
1.2 kV |
| Operating Temperature |
-55°C ~ 125°C |
| Product Status |
Active |
| Packaging |
Bulk |
| Series |
503 |
| Part Status |
Active |
| Termination |
Wire Wrap |
| Type |
DIP, 0.9 (22.86mm) Row Spacing |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
IGBTs |
| Contact Finish - Mating |
Gold |
| Max Power Dissipation |
543 W |
| Technology |
Si |
| Current Rating |
3A |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Test Condition |
800V, 50A, 2.2Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Power Dissipation |
543 |
| Input Type |
Standard |
| Power - Max |
543 W |
| Product Type |
IGBT Transistors |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Max Collector Current |
134 A |
| Collector Emitter Breakdown Voltage |
1.2 kV |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
134 A |
| Collector Emitter Saturation Voltage |
1.7 |
| Termination Post Length |
0.500 (12.70mm) |
| Pitch - Post |
0.100 (2.54mm) |
| Contact Resistance |
— |
| Contact Finish - Post |
Gold |
| Continuous Collector Current |
134 |
| IGBT Type |
NPT, Trench Field Stop |
| Gate Charge |
315 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
28ns/320ns |
| Switching Energy |
4495µJ (off) |
| Features |
Closed Frame |
| Product Category |
IGBT Transistors |
| Contact Finish Thickness - Mating |
10.0µin (0.25µm) |
| Contact Finish Thickness - Post |
10.0µin (0.25µm) |
| Material Flammability Rating |
UL94 V-0 |
| Radiation Hardening |
No |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Microchip APT50GN60BDQ3G
In stock
| Manufacturer |
Microchip |
|---|---|
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Mounting Style |
Through Hole |
| Base Product Number |
APT50GN60 |
| Brand |
Microchip Technology / Atmel |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Pd - Power Dissipation |
366 W |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Subcategory |
IGBTs |
| Test Condition |
400V, 50A, 4.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 50A |
| Power Dissipation |
366 |
| Input Type |
Standard |
| Power - Max |
366 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
107 A |
| Technology |
Si |
| Configuration |
Single |
| Continuous Collector Current |
107 |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
325 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
20ns/230ns |
| Switching Energy |
1.185mJ (on), 1.565mJ (off) |
| Reverse Recovery Time (trr) |
35 ns |
| Product Category |
IGBT Transistors |
Microchip APT50GN60BG
In stock
| Manufacturer |
Microchip |
|---|---|
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT50GN60 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Current-Collector (Ic) (Max) |
107 A |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
366 W |
| Mounting Type |
Through Hole |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Test Conditions |
400V, 50A, 4.3Ohm, 15V |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
366 |
| Input Type |
Standard |
| Power - Max |
366 W |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 50A |
| Continuous Collector Current |
107 |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
325 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
20ns/230ns |
| Switching Energy |
1185µJ (on), 1565µJ (off) |
Microchip APT50GP60BG
In stock
| Manufacturer |
Microchip |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT50GP60 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Pd - Power Dissipation |
625 W |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
POWER MOS 7® |
| Technology |
Si |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
625 W |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
100 A |
| Test Condition |
400V, 50A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 50A |
| IGBT Type |
PT |
| Gate Charge |
165 nC |
| Current - Collector Pulsed (Icm) |
190 A |
| Td (on/off) @ 25°C |
19ns/83ns |
| Switching Energy |
465µJ (on), 637µJ (off) |
Microchip APT50GP60LDLG
In stock
| Manufacturer |
Microchip |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Panel Mount |
| Mounting Feature |
Bulkhead – Front Side Nut |
| Contact Shape |
Circular |
| Shell Material |
Aluminum |
| Base Product Number |
D38999/24FJ |
| Mfr |
Amphenol Aerospace Operations |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-65°C ~ 200°C |
| Connector Type |
Receptacle Housing |
| Type |
For Female Sockets |
| Number of Positions |
46 (44 + 2 Coax) |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Fastening Type |
Threaded |
| Contact Type |
Crimp |
| Max Power Dissipation |
625 W |
| Orientation |
B |
| Shielding |
Shielded |
| Ingress Protection |
Environment Resistant |
| Shell Finish |
Electroless Nickel |
| Shell Size - Insert |
25-46 |
| Housing Color |
Silver |
| Note |
Contacts Not Included |
| Contact Size |
16 (4), 20 (40), 8 Coax (2) |
| Element Configuration |
Single |
| Shell Size, MIL |
J |
| Collector Emitter Voltage (VCEO) |
600 V |
| Max Collector Current |
150 A |
| Collector Emitter Breakdown Voltage |
600 V |
| Radiation Hardening |
No |