Showing 2437–2448 of 3680 results
Microchip APT50GS60BRDLG
In stock
| Manufacturer |
Danaher Controls |
|---|---|
| Mount |
Through Hole |
| Manufacturer Part Number |
HS351024G1355 |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
415 W |
| Element Configuration |
Single |
| Collector Emitter Voltage (VCEO) |
600 V |
| Max Collector Current |
93 A |
| Collector Emitter Breakdown Voltage |
600 V |
| Radiation Hardening |
No |
Microchip APT50GT120B2RDLG
In stock
| Manufacturer |
Microchip |
|---|---|
| Technology |
SARAM |
| Mounting Type |
Surface Mount |
| Package / Case |
80-LQFP |
| Supplier Device Package |
80-TQFP (14×14) |
| Operating Temperature |
0°C ~ 70°C (TA) |
| Packaging |
Tray |
| Series |
— |
| Part Status |
Obsolete |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
694 W |
| Mount |
Through Hole |
| Base Part Number |
IDT70825 |
| Voltage - Supply |
4.5 V ~ 5.5 V |
| Memory Size |
128Kb (8K x 16) |
| Element Configuration |
Single |
| Memory Type |
Volatile |
| Access Time |
25ns |
| Memory Format |
RAM |
| Memory Interface |
Parallel |
| Write Cycle Time - Word, Page |
25ns |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Max Collector Current |
106 A |
| Collector Emitter Breakdown Voltage |
1.2 kV |
| Radiation Hardening |
No |
Microchip APT50GT60BRDQ2G
In stock
| Manufacturer |
Cutler Hammer, Div of Eaton Co |
|---|---|
| Input Type |
Standard |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT50GT60 |
| Manufacturer Part Number |
XTMCXFAC31 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
Thunderbolt IGBT® |
| Power Dissipation |
446 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Power - Max |
446 W |
| Current - Collector (Ic) (Max) |
110 A |
| Collector Emitter Saturation Voltage |
2 |
| Test Condition |
400V, 50A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 50A |
| Continuous Collector Current |
110 |
| IGBT Type |
NPT |
| Gate Charge |
240 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
14ns/240ns |
| Switching Energy |
995µJ (on), 1070µJ (off) |
| Reverse Recovery Time (trr) |
22 ns |
Microchip APT60GT60BRG
In stock
| Manufacturer |
CTS |
|---|---|
| Base Product Number |
APT60GT60 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Supplier Device Package |
TO-247 [B] |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Package Description |
FLANGE MOUNT, R-PSFM-T3 |
| Package Shape |
RECTANGULAR |
| Brand |
CTS Electronic Components |
| Factory Pack Quantity:Factory Pack Quantity |
1000 |
| Ihs Manufacturer |
MICROSEMI CORP |
| Manufacturer Part Number |
APT60GT60BRG |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 40 C |
| Operating Temperature-Max |
150 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Max Operating Temperature |
150 °C |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Active |
| Part Package Code |
TO-247 |
| Pd - Power Dissipation |
500 W |
| Product Status |
Active |
| Qualification |
AEC-Q200 |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
0.92 |
| Rohs Code |
Yes |
| Supply Voltage - Max |
5 V |
| Supply Voltage - Min |
1.8 V |
| Turn-off Time-Nom (toff) |
495 ns |
| Turn-on Time-Nom (ton) |
84 ns |
| Voltage Rating (DC) |
600 V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Reel |
| Series |
CA70 |
| JESD-609 Code |
e1 |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Package |
Tube |
| Contact Plating |
Tin |
| Termination Style |
SMD/SMT |
| Frequency Stability |
150 PPM |
| Power - Max |
500 W |
| Max Power Dissipation |
500 W |
| Technology |
Si |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Current Rating |
100 A |
| Frequency |
40 MHz |
| Transistor Application |
POWER CONTROL |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
Single |
| Load Capacitance |
15 pF |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Polarity/Channel Type |
N-CHANNEL |
| Collector-Emitter Voltage-Max |
600 V |
| Min Operating Temperature |
-55 °C |
| Collector Current-Max (IC) |
100 A |
| Subcategory |
Oscillators |
| Collector Emitter Voltage (VCEO) |
600 V |
| Max Collector Current |
100 A |
| JEDEC-95 Code |
TO-247 |
| Collector Emitter Breakdown Voltage |
600 V |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
100 A |
| Output Format |
HCMOS |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 60A |
| Product Type |
Standard Oscillators |
| Radiation Hardening |
No |
| IGBT Type |
NPT |
| Gate Charge |
275 nC |
| Current - Collector Pulsed (Icm) |
360 A |
| Td (on/off) @ 25°C |
26ns/395ns |
| Switching Energy |
3.4mJ |
| Product Category |
Standard Clock Oscillators |
| Height |
1.8 mm |
| Length |
7 mm |
| Width |
5 mm |
| Lead Free |
Lead Free |
Microchip APT68GA60B2D40
In stock
| Manufacturer |
Microchip |
|---|---|
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Base Product Number |
APT68GA60 |
| Brand |
Microchip Technology |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Mfr |
Microchip Technology |
| Technology |
Si |
| Mount |
Through Hole |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 8™ |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
IGBTs |
| Max Power Dissipation |
520 W |
| Package |
Tube |
| Element Configuration |
Single |
| Collector Emitter Saturation Voltage |
2 |
| Test Condition |
400V, 40A, 4.7Ohm, 15V |
| Power - Max |
520 W |
| Product Type |
IGBT Transistors |
| Collector Emitter Voltage (VCEO) |
2.5 V |
| Max Collector Current |
121 A |
| Collector Emitter Breakdown Voltage |
600 V |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
121 A |
| Power Dissipation |
520 |
| Input Type |
Standard |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
| Continuous Collector Current |
121 |
| IGBT Type |
PT |
| Gate Charge |
198 nC |
| Current - Collector Pulsed (Icm) |
202 A |
| Td (on/off) @ 25°C |
21ns/133ns |
| Switching Energy |
715µJ (on), 607µJ (off) |
| Product Category |
IGBT Transistors |
Microchip APT70GR65B2SCD30
In stock
| Manufacturer |
Microchip |
|---|---|
| Mount |
Through Hole |
| Wire Size |
18 to 16 |
| Operating Temperature |
-65 to 200 °C |
| Contact Type |
Power |
| Max Power Dissipation |
595 W |
| Contact Size |
8 |
| Collector Emitter Voltage (VCEO) |
2.4 V |
| Max Collector Current |
134 A |
| Shielded |
No |
| Collector Emitter Breakdown Voltage |
650 V |
| Product Length |
13.47 mm |
| Plating Thickness |
1.27 µm |
Microchip APT75GN60SDQ2G
In stock
| Manufacturer |
Microchip |
|---|---|
| Packaging |
Tube |
| Supplier Device Package |
D3PAK |
| Mounting Style |
SMD/SMT |
| Base Product Number |
APT75GN60 |
| Brand |
Microchip Technology / Atmel |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Maximum Operating Temperature |
+ 175 C |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Mfr |
Murata Electronics |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tape & Reel (TR) |
| Pd - Power Dissipation |
536 W |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Package / Case |
D3PAK-3 |
| Mounting Type |
Surface Mount |
| Test Condition |
400V, 75A, 1Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 75A |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
536 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
155 A |
| Subcategory |
IGBTs |
| Series |
* |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
485 nC |
| Current - Collector Pulsed (Icm) |
225 A |
| Td (on/off) @ 25°C |
47ns/385ns |
| Switching Energy |
2.5mJ (on), 2.14mJ (off) |
| Reverse Recovery Time (trr) |
25 ns |
| Technology |
Si |
| Product Category |
IGBT Transistors |
Microchip APT75GP120B2G
In stock
| Manufacturer |
Microchip |
|---|---|
| Max Power Dissipation |
1.042 kW |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Mounting Style |
Through Hole |
| Base Product Number |
APT75GP120 |
| Brand |
Microchip Technology / Atmel |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
100 A |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Mfr |
Microchip Technology |
| Pd - Power Dissipation |
1.042 kW |
| Product Status |
Active |
| Tradename |
POWER MOS 7 IGBT |
| Unit Weight |
0.580821 oz |
| Voltage Rating (DC) |
1.2 kV |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
IGBTs |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Test Condition |
600V, 75A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 75A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
1042 W |
| Product Type |
IGBT Transistors |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Max Collector Current |
100 A |
| Operating Temperature Range |
– 55 C to + 150 C |
| Collector Emitter Breakdown Voltage |
1.2 kV |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
100 A |
| Collector Emitter Saturation Voltage |
3.3 V |
| Current Rating |
100 A |
| Technology |
Si |
| Continuous Collector Current |
100 A |
| IGBT Type |
PT |
| Gate Charge |
320 nC |
| Current - Collector Pulsed (Icm) |
300 A |
| Td (on/off) @ 25°C |
20ns/163ns |
| Switching Energy |
1620µJ (on), 2500µJ (off) |
| Product Category |
IGBT Transistors |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Width |
16.26 mm |
| Radiation Hardening |
No |
| Configuration |
Single |
| Lead Free |
Lead Free |
Microchip APTGF25H120T2G
In stock
| Manufacturer |
Microchip |
|---|---|
| Mount |
Chassis Mount, Screw |
| Number of Pins |
22 |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-40 °C |
| Max Power Dissipation |
208 W |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Max Collector Current |
40 A |
| Collector Emitter Breakdown Voltage |
1.2 kV |
| Input Capacitance |
1.65 nF |
| NTC Thermistor |
Yes |
Microchip APTGT50H120TG
In stock
| Manufacturer |
Microchip |
|---|---|
| Mount |
Chassis Mount, Screw |
| Number of Pins |
20 |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-40 °C |
| Max Power Dissipation |
277 W |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Max Collector Current |
75 A |
| Collector Emitter Breakdown Voltage |
1.2 kV |
| Input Capacitance |
3.6 nF |
| NTC Thermistor |
Yes |
| Radiation Hardening |
No |