Showing 2449–2460 of 3680 results
Microchip PPHR70L60A
In stock
| Manufacturer |
Royalohm |
|---|---|
| Resistance |
1.5 MOhms |
| Number of Pins |
3 |
| Mounting Style |
PCB Mount |
| Brand |
Royalohm |
| Case Code - in |
2010 |
| Case Code - mm |
5025 |
| Factory Pack Quantity:Factory Pack Quantity |
4000 |
| Maximum Operating Temperature |
+ 155 C |
| Minimum Operating Temperature |
– 55 C |
| Packaging |
Reel |
| Series |
General Purpose Thick Film |
| Tolerance |
5 % |
| Temperature Coefficient |
100 PPM / C |
| Mount |
Through Hole |
| Power Rating |
750 mW (3/4 W) |
| Subcategory |
Resistors |
| Technology |
Thick Film |
| Termination Style |
SMD/SMT |
| Element Configuration |
Single |
| Application |
General Purpose |
| Product Type |
Thick Film Resistors |
| Max Collector Current |
70 A |
| Features |
Wrap-Around Termination |
| Voltage Rating |
200 V |
| Product Category |
Thick Film Resistors – SMD |
| Height |
0.55 mm |
| Length |
5 mm |
| Width |
2.5 mm |
| Radiation Hardening |
No |
Microchip Technology APT100GN60B2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Input Type |
Standard |
| Package / Case |
TO-247-3 Variant |
| Base Product Number |
APT100 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Power - Max |
625 W |
| Current - Collector (Ic) (Max) |
229 A |
| Test Condition |
400V, 100A, 1Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 100A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
600 nC |
| Current - Collector Pulsed (Icm) |
300 A |
| Td (on/off) @ 25°C |
31ns/310ns |
| Switching Energy |
4.7mJ (on), 2.675mJ (off) |
Microchip Technology APT100GN60LDQ4G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Package / Case |
TO-264-3 |
| Supplier Device Package |
TO-264 [L] |
| Base Product Number |
APT100 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Continuous Collector Current Ic Max |
229 A |
| Current-Collector (Ic) (Max) |
229 A |
| Test Conditions |
400V, 100A, 1Ohm, 15V |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
625 W |
| Product Status |
Active |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Unit Weight |
0.373904 oz |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 100A |
| Continuous Collector Current |
229 A |
| Configuration |
Single |
| Power Dissipation |
625 |
| Input Type |
Standard |
| Power - Max |
625 W |
| Operating Temperature Range |
– 55 C to + 175 C |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Packaging |
Tube |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
600 nC |
| Current - Collector Pulsed (Icm) |
300 A |
| Td (on/off) @ 25°C |
31ns/310ns |
| Switching Energy |
4.75mJ (on), 2.675mJ (off) |
| Height |
5.21 mm |
| Length |
26.49 mm |
| Width |
20.5 mm |
Microchip Technology APT13GP120BG
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT13GP120 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Current-Collector (Ic) (Max) |
41 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
250 W |
| Product Status |
Active |
| Test Conditions |
600V, 13A, 5Ohm, 15V |
| Unit Weight |
0.208116 oz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| Configuration |
Single |
| Power Dissipation |
250 |
| Input Type |
Standard |
| Power - Max |
250 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 13A |
| Continuous Collector Current |
41 |
| IGBT Type |
PT |
| Gate Charge |
55 nC |
| Current - Collector Pulsed (Icm) |
50 A |
| Td (on/off) @ 25°C |
9ns/28ns |
| Switching Energy |
115µJ (on), 165µJ (off) |
Microchip Technology APT15GN120BDQ1G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT15GN120 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
195 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
45 A |
| Test Condition |
800V, 15A, 4.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
90 nC |
| Current - Collector Pulsed (Icm) |
45 A |
| Td (on/off) @ 25°C |
10ns/150ns |
| Switching Energy |
410µJ (on), 950µJ (off) |
Microchip Technology APT15GP60BDQ1G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT15GP60 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Current-Collector (Ic) (Max) |
56 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
250 W |
| Product Status |
Active |
| Test Conditions |
400V, 15A, 5Ohm, 15V |
| Unit Weight |
0.208116 oz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| Configuration |
Single |
| Power Dissipation |
250 |
| Input Type |
Standard |
| Power - Max |
250 W |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 15A |
| Continuous Collector Current |
56 |
| IGBT Type |
PT |
| Gate Charge |
55 nC |
| Current - Collector Pulsed (Icm) |
65 A |
| Td (on/off) @ 25°C |
8ns/29ns |
| Switching Energy |
130µJ (on), 120µJ (off) |
Microchip Technology APT200GN60B2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Styles |
Through Hole |
| Surface Mount |
NO |
| Number of Terminals |
3 |
| Base Product Number |
APT200 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Current-Collector (Ic) (Max) |
283 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Ihs Manufacturer |
MICROSEMI CORP |
| Manufacturer Part Number |
APT200GN60B2G |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Microchip Technology |
| Test Conditions |
400V, 200A, 1Ohm, 15V |
| Minimum Operating Temperature |
– 55 C |
| Operating Temperature-Max |
175 °C |
| Package |
Tube |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
FLANGE MOUNT, R-PSFM-T3 |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Active |
| Part Package Code |
TO-247AC |
| Pd - Power Dissipation |
682 W |
| Product Status |
Active |
| Risk Rank |
2.2 |
| Rohs Code |
Yes |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Polarity/Channel Type |
N-CHANNEL |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
Single |
| Power Dissipation |
682 |
| Input Type |
Standard |
| Power - Max |
682 W |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Unit Weight |
1.340411 oz |
| Power Dissipation-Max (Abs) |
682 W |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 200A |
| Collector Current-Max (IC) |
283 A |
| Continuous Collector Current |
283 |
| IGBT Type |
Trench Field Stop |
| Collector-Emitter Voltage-Max |
600 V |
| Gate Charge |
1180 nC |
| Current - Collector Pulsed (Icm) |
600 A |
| Td (on/off) @ 25°C |
50ns/560ns |
| Switching Energy |
13mJ (on), 11mJ (off) |
| Gate-Emitter Voltage-Max |
20 V |
| Packaging |
Tube |
| Gate-Emitter Thr Voltage-Max |
6.5 V |
Microchip Technology APT20GF120BRDG
In stock
| Manufacturer |
Microchip |
|---|---|
| Subcategory |
IGBTs |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Mounting Style |
Through Hole |
| Base Product Number |
APT20GF120 |
| Brand |
Microchip Technology |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Configuration |
Single |
| Technology |
Si |
| Input Type |
Standard |
| Power - Max |
200 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
32 A |
| Test Condition |
792V, 20A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 15A |
| IGBT Type |
NPT |
| Gate Charge |
140 nC |
| Current - Collector Pulsed (Icm) |
64 A |
| Td (on/off) @ 25°C |
17ns/93ns |
| Reverse Recovery Time (trr) |
85 ns |
| Product Category |
IGBT Transistors |
Microchip Technology APT20GN60BDQ2G
In stock
| Manufacturer |
Microchip |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Mounting Style |
Through Hole |
| Base Product Number |
APT20GN60 |
| Brand |
Microchip Technology / Atmel |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
136 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
40 A |
| Test Condition |
400V, 20A, 4.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 20A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
120 nC |
| Current - Collector Pulsed (Icm) |
60 A |
| Td (on/off) @ 25°C |
9ns/140ns |
| Switching Energy |
230μJ (on), 580μJ (off) |
| Reverse Recovery Time (trr) |
30 ns |
| Product Category |
IGBT Transistors |