Showing 2461–2472 of 3680 results
Microchip Technology APT25GN120B2DQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Base Product Number |
APT25GN120 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Power Dissipation |
272 |
| Input Type |
Standard |
| Power - Max |
272 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
67 A |
| Collector Emitter Saturation Voltage |
1.7 |
| Test Condition |
800V, 25A, 4.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 25A |
| Continuous Collector Current |
67 |
| IGBT Type |
NPT, Trench Field Stop |
| Gate Charge |
155 nC |
| Current - Collector Pulsed (Icm) |
75 A |
| Td (on/off) @ 25°C |
22ns/280ns |
| Switching Energy |
2.15µJ (off) |
Microchip Technology APT25GR120BD15
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Maximum Operating Temperature |
+ 150 C |
| Supplier Device Package |
TO-247 |
| Base Product Number |
APT25GR120 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
75 A |
| Current-Collector (Ic) (Max) |
75 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Tradename |
Ultra Fast NPT-IGBT |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
521 W |
| Product Status |
Active |
| Test Conditions |
600V, 25A, 4.3Ohm, 15V |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 25A |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Configuration |
Single |
| Power Dissipation |
521 |
| Input Type |
Standard |
| Power - Max |
521 W |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Continuous Collector Current |
75 A |
| IGBT Type |
NPT |
| Unit Weight |
1.340411 oz |
| Gate Charge |
203 nC |
| Current - Collector Pulsed (Icm) |
100 A |
| Td (on/off) @ 25°C |
16ns/122ns |
| Switching Energy |
742µJ (on), 427µJ (off) |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Packaging |
Tube |
| Width |
16.26 mm |
Microchip Technology APT25GR120SD15
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D3Pak |
| Base Product Number |
APT25GR120 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Power Dissipation |
521 |
| Input Type |
Standard |
| Power - Max |
521 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
75 A |
| Collector Emitter Saturation Voltage |
2.5 |
| Test Condition |
600V, 25A, 4.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 25A |
| Continuous Collector Current |
75 |
| IGBT Type |
NPT |
| Gate Charge |
203 nC |
| Current - Collector Pulsed (Icm) |
100 A |
| Td (on/off) @ 25°C |
16ns/122ns |
| Switching Energy |
742µJ (on), 427µJ (off) |
Microchip Technology APT25GT120BRDQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Supplier Device Package |
TO-247 [B] |
| Weight |
38.000013 g |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Base Product Number |
APT25GT120 |
| Number of Elements |
1 |
| Operating Temperature-Max |
150 °C |
| Collector-Emitter Breakdown Voltage |
1.2 kV |
| Current-Collector (Ic) (Max) |
54 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Ihs Manufacturer |
MICROSEMI CORP |
| Manufacturer Part Number |
APT25GT120BRDQ2G |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Mounting Styles |
Through Hole |
| Series |
Thunderbolt IGBT® |
| Continuous Collector Current Ic Max |
54 A |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
ROHS COMPLIANT, TO-247, 3 PIN |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Active |
| Part Package Code |
TO-247 |
| Pd - Power Dissipation |
347 W |
| Product Status |
Active |
| Package |
Tube |
| Rohs Code |
Yes |
| Risk Rank |
1.18 |
| Test Conditions |
800V, 25A, 5Ohm, 15V |
| Tradename |
Thunderbolt IGBT |
| Turn-off Time-Nom (toff) |
186 ns |
| Turn-on Time-Nom (ton) |
41 ns |
| Unit Weight |
1.340411 oz |
| Voltage Rating (DC) |
1.2 kV |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Minimum Operating Temperature |
– 55 C |
| Mount |
Through Hole |
| Pin Count |
3 |
| Reach Compliance Code |
unknown |
| Transistor Application |
POWER CONTROL |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
347 W |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Polarity/Channel Type |
N-CHANNEL |
| Pbfree Code |
Yes |
| Current Rating |
54 A |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
Single |
| Element Configuration |
Single |
| Power Dissipation |
347 |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
347 W |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Current - Collector Pulsed (Icm) |
75 A |
| JESD-609 Code |
e1 |
| IGBT Type |
NPT |
| ECCN Code |
EAR99 |
| Operating Temperature Range |
– 55 C to + 150 C |
| JEDEC-95 Code |
TO-247 |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Power Dissipation-Max (Abs) |
347 W |
| Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 25A |
| Collector Current-Max (IC) |
54 A |
| Continuous Collector Current |
54 A |
| Collector-Emitter Voltage-Max |
1200 V |
| Radiation Hardening |
No |
| Max Collector Current |
54 A |
| Gate Charge |
170 nC |
| Td (on/off) @ 25°C |
14ns/150ns |
| Switching Energy |
930µJ (on), 720µJ (off) |
| Gate-Emitter Voltage-Max |
30 V |
| Gate-Emitter Thr Voltage-Max |
6.5 V |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Width |
16.26 mm |
| Lead Free |
Lead Free |
Microchip Technology APT25GT120BRG
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Maximum Operating Temperature |
+ 150 C |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT25GT120 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
54 A |
| Current-Collector (Ic) (Max) |
54 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Tradename |
Thunderbolt IGBT |
| Mounting Type |
Through Hole |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
347 W |
| Product Status |
Active |
| Test Conditions |
800V, 25A, 5Ohm, 15V |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Unit Weight |
1.340411 oz |
| Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 25A |
| Continuous Collector Current |
54 A |
| Series |
Thunderbolt IGBT® |
| Configuration |
Single |
| Power Dissipation |
347 |
| Input Type |
Standard |
| Power - Max |
347 W |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| IGBT Type |
NPT |
| Gate Charge |
170 nC |
| Current - Collector Pulsed (Icm) |
75 A |
| Td (on/off) @ 25°C |
14ns/150ns |
| Switching Energy |
930µJ (on), 720µJ (off) |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Width |
16.26 mm |
Microchip Technology APT30GN60BDQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT30GN60 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Current-Collector (Ic) (Max) |
63 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
203 W |
| Mounting Type |
Through Hole |
| Unit Weight |
0.208116 oz |
| Test Conditions |
400V, 30A, 4.3Ohm, 15V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Configuration |
Single |
| Power Dissipation |
203 |
| Input Type |
Standard |
| Power - Max |
203 W |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Continuous Collector Current |
63 |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
165 nC |
| Current - Collector Pulsed (Icm) |
90 A |
| Td (on/off) @ 25°C |
12ns/155ns |
| Switching Energy |
525µJ (on), 700µJ (off) |
Microchip Technology APT33GF120B2RDQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Current Rating |
64 A |
| Package / Case |
TO-247-3 Variant |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Base Product Number |
APT33GF120 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Voltage Rating (DC) |
1.2 kV |
| Package Shape |
RECTANGULAR |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
Yes |
| Terminal Finish |
TIN SILVER COPPER |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
357 W |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Current - Collector (Ic) (Max) |
64 A |
| Power Dissipation-Max (Abs) |
357 W |
| Number of Elements |
1 |
| Configuration |
Single |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
357 W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Max Collector Current |
64 A |
| Collector Emitter Breakdown Voltage |
1.2 kV |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| JESD-30 Code |
R-PSIP-T3 |
| Pin Count |
3 |
| Test Condition |
800V, 25A, 4.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 25A |
| Collector Current-Max (IC) |
64 A |
| IGBT Type |
NPT |
| Collector-Emitter Voltage-Max |
1200 V |
| Gate Charge |
170 nC |
| Current - Collector Pulsed (Icm) |
75 A |
| Td (on/off) @ 25°C |
14ns/185ns |
| Switching Energy |
1.315mJ (on), 1.515mJ (off) |
| Gate-Emitter Voltage-Max |
30 V |
| Gate-Emitter Thr Voltage-Max |
6.5 V |
| Radiation Hardening |
No |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
Microchip Technology APT35GN120SG/TR
In stock
| Manufacturer |
Microchip |
|---|---|
| Package |
Digi-Reel? |
| Supplier Device Package |
D3PAK |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Mounting Style |
SMD/SMT |
| Base Product Number |
APT35GN120 |
| Brand |
Microchip Technology |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| JESD-30 Code |
R-PSSO-G2 |
| Minimum Operating Temperature |
– 55 C |
| Package Shape |
RECTANGULAR |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Reel |
| Additional Feature |
HIGH RELIABILITY |
| Subcategory |
IGBTs |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
unknown |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Test Condition |
800V, 35A, 2.2Ohm, 15V |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
379 W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
84 A |
| Power Dissipation-Max (Abs) |
379 W |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 35A |
| Collector Current-Max (IC) |
94 A |
| Number of Elements |
1 |
| IGBT Type |
NPT, Trench Field Stop |
| Collector-Emitter Voltage-Max |
1200 V |
| Gate Charge |
220 nC |
| Current - Collector Pulsed (Icm) |
105 A |
| Td (on/off) @ 25°C |
24ns/300ns |
| Switching Energy |
-, 2.315mJ (off) |
| Gate-Emitter Voltage-Max |
30 V |
| Gate-Emitter Thr Voltage-Max |
6.5 V |
| Case Connection |
COLLECTOR |
| Product Category |
IGBT Transistors |
Microchip Technology APT35GP120BG
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT35GP120 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Current-Collector (Ic) (Max) |
96 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
543 W |
| Product Status |
Active |
| Test Conditions |
600V, 35A, 5Ohm, 15V |
| Unit Weight |
1.340411 oz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| Configuration |
Single |
| Power Dissipation |
543 |
| Input Type |
Standard |
| Power - Max |
543 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 35A |
| Continuous Collector Current |
96 |
| IGBT Type |
PT |
| Gate Charge |
150 nC |
| Current - Collector Pulsed (Icm) |
140 A |
| Td (on/off) @ 25°C |
16ns/94ns |
| Switching Energy |
750µJ (on), 680µJ (off) |
Microchip Technology APT40GP60B2DQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Base Product Number |
APT40GP60 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Current-Collector (Ic) (Max) |
100 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
543 W |
| Product Status |
Active |
| Test Conditions |
400V, 40A, 5Ohm, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| Configuration |
Single |
| Power Dissipation |
543 |
| Input Type |
Standard |
| Power - Max |
543 W |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 40A |
| Continuous Collector Current |
100 |
| IGBT Type |
PT |
| Gate Charge |
135 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
20ns/64ns |
| Switching Energy |
385µJ (on), 350µJ (off) |
Microchip Technology APT40GR120B2D30
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Maximum Operating Temperature |
+ 150 C |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
APT40GR120 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
88 A |
| Current-Collector (Ic) (Max) |
88 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Tradename |
Ultra Fast NPT-IGBT |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
500 W |
| Product Status |
Active |
| Test Conditions |
600V, 40A, 4.3Ohm, 15V |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Configuration |
Single |
| Power Dissipation |
500 |
| Input Type |
Standard |
| Power - Max |
500 W |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Continuous Collector Current |
88 A |
| IGBT Type |
NPT |
| Unit Weight |
1.340411 oz |
| Gate Charge |
210 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
22ns/163ns |
| Switching Energy |
1.38mJ (on), 906µJ (off) |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Packaging |
Tube |
| Width |
16.26 mm |
Microchip Technology APT44GA60BD30
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Minimum Operating Temperature |
– 55 C |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT44GA60 |
| Maximum Operating Temperature |
+ 150 C |
| Min Operating Temperature |
-55 °C |
| Mount |
Through Hole |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 8™ |
| Max Operating Temperature |
150 °C |
| Mfr |
Microchip Technology |
| Max Power Dissipation |
337 W |
| Current - Collector (Ic) (Max) |
78 A |
| Test Condition |
400V, 26A, 4.7Ohm, 15V |
| Input Type |
Standard |
| Power - Max |
337 W |
| Collector Emitter Voltage (VCEO) |
600 V |
| Max Collector Current |
78 A |
| Collector Emitter Breakdown Voltage |
600 V |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Configuration |
Single |
| Element Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 26A |
| IGBT Type |
PT |
| Gate Charge |
128 nC |
| Current - Collector Pulsed (Icm) |
130 A |
| Td (on/off) @ 25°C |
16ns/84ns |
| Switching Energy |
409µJ (on), 258µJ (off) |
| Radiation Hardening |
No |