Showing 2473–2484 of 3680 results
Microchip Technology APT45GP120B2DQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
T-Max-3 |
| Mounting Style |
Through Hole |
| Base Product Number |
APT45GP120 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Tradename |
POWER MOS 7 IGBT |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
625 W |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
113 A |
| Test Condition |
600V, 45A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 45A |
| Continuous Collector Current |
113 A |
| IGBT Type |
PT |
| Gate Charge |
185 nC |
| Current - Collector Pulsed (Icm) |
170 A |
| Td (on/off) @ 25°C |
18ns/100ns |
| Switching Energy |
900µJ (on), 905µJ (off) |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Width |
16.26 mm |
Microchip Technology APT45GP120BG
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Configuration |
Single |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT45GP120 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Tradename |
POWER MOS 7 IGBT |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| Mounting Type |
Through Hole |
| Power - Max |
625 W |
| Input Type |
Standard |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
100 A |
| Test Condition |
600V, 45A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 45A |
| Continuous Collector Current |
100 A |
| IGBT Type |
PT |
| Gate Charge |
185 nC |
| Current - Collector Pulsed (Icm) |
170 A |
| Td (on/off) @ 25°C |
18ns/102ns |
| Switching Energy |
900µJ (on), 904µJ (off) |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Width |
16.26 mm |
Microchip Technology APT45GP120JDQ2
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Package Shape |
RECTANGULAR |
| Mounting Type |
Chassis Mount |
| Package / Case |
ISOTOP |
| Surface Mount |
NO |
| Number of Pins |
4 |
| Supplier Device Package |
ISOTOP® |
| Number of Terminals |
4 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Screw Mounts |
| Base Product Number |
APT45GP120 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount, Screw |
| Product Status |
Active |
| Voltage Rating (DC) |
1.2 kV |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| JESD-609 Code |
e1 |
| Pbfree Code |
Yes |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
329 W |
| Terminal Position |
UPPER |
| Package |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Max Collector Current |
75 A |
| Current - Collector Cutoff (Max) |
750 µA |
| Pin Count |
4 |
| JESD-30 Code |
R-PUFM-X4 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
Single |
| Element Configuration |
Single |
| Case Connection |
ISOLATED |
| Power - Max |
329 W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Reach Compliance Code |
unknown |
| Current Rating |
75 A |
| Collector Emitter Breakdown Voltage |
1.2 kV |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
75 A |
| Input Capacitance |
4 nF |
| Power Dissipation-Max (Abs) |
329 W |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 45A |
| Collector Current-Max (IC) |
75 A |
| IGBT Type |
PT |
| Collector-Emitter Voltage-Max |
1200 V |
| NTC Thermistor |
No |
| Gate-Emitter Voltage-Max |
30 V |
| Input Capacitance (Cies) @ Vce |
4 nF @ 25 V |
| Radiation Hardening |
No |
| Lead Free |
Lead Free |
Microchip Technology APT45GR65B
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Tradename |
Ultra Fast NPT-IGBT |
| Surface Mount |
NO |
| Supplier Device Package |
TO-247 |
| Base Product Number |
APT45GR65 |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
118 A |
| Current-Collector (Ic) (Max) |
92 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Ihs Manufacturer |
MICROSEMI CORP |
| Manufacturer Part Number |
APT45GR65B |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Operating Temperature-Max |
150 °C |
| Package |
Tube |
| Part Life Cycle Code |
Active |
| Pd - Power Dissipation |
543 W |
| Product Status |
Active |
| Risk Rank |
2.26 |
| Rohs Code |
Yes |
| Test Conditions |
433V, 45A, 4.3Ohm, 15V |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Collector Current-Max (IC) |
92 A |
| Continuous Collector Current |
118 A |
| Reach Compliance Code |
compliant |
| Configuration |
Single |
| Power Dissipation |
543 |
| Input Type |
Standard |
| Power - Max |
357 W |
| Polarity/Channel Type |
N-CHANNEL |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Power Dissipation-Max (Abs) |
357 W |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 45A |
| Packaging |
Tube |
| Unit Weight |
1.340411 oz |
| IGBT Type |
NPT |
| Collector-Emitter Voltage-Max |
650 V |
| Gate Charge |
203 nC |
| Current - Collector Pulsed (Icm) |
168 A |
| Td (on/off) @ 25°C |
15ns/100ns |
| Switching Energy |
900µJ (on), 580µJ (off) |
| Gate-Emitter Voltage-Max |
30 V |
| Gate-Emitter Thr Voltage-Max |
6.5 V |
| Height |
5.31 mm |
| Length |
21.46 mm |
| ECCN Code |
EAR99 |
| Width |
16.26 mm |
Microchip Technology APT45GR65B2DU30
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mount |
Through Hole |
| Mounting Style |
Through Hole |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Packaging |
Tube |
| Max Power Dissipation |
543 W |
| Configuration |
Single |
| Collector Emitter Voltage (VCEO) |
2.4 V |
| Max Collector Current |
118 A |
| Reverse Recovery Time |
80 ns |
| Collector Emitter Breakdown Voltage |
650 V |
Microchip Technology APT50GF120B2RG
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mfr |
Microchip Technology |
| Mounting Type |
Through Hole |
| Package / Case |
T-Max-3 |
| Number of Pins |
3 |
| Base Product Number |
APT50GF120 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Collector-Emitter Breakdown Voltage |
1.2 kV |
| Current-Collector (Ic) (Max) |
135 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Packaging |
Tube |
| Mount |
Through Hole |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
781 W |
| Product Status |
Active |
| Test Conditions |
800V, 50A, 1Ohm, 15V |
| Turn Off Delay Time |
260 ns |
| Voltage Rating (DC) |
1.2 kV |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Maximum Operating Temperature |
+ 150 C |
| Max Operating Temperature |
150 °C |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 50A |
| Current Rating |
156 A |
| Configuration |
Single |
| Element Configuration |
Single |
| Power Dissipation |
781 |
| Input Type |
Standard |
| Turn On Delay Time |
25 ns |
| Power - Max |
781 W |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Max Collector Current |
135 A |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
781 W |
| Max Junction Temperature (Tj) |
150 °C |
| Continuous Collector Current |
135 |
| IGBT Type |
NPT |
| Gate Charge |
340 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
25ns/260ns |
| Switching Energy |
3.6mJ (on), 2.64mJ (off) |
| Height |
25.96 mm |
| Radiation Hardening |
No |
| Lead Free |
Lead Free |
Microchip Technology APT50GF120LRG
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3 |
| Supplier Device Package |
TO-264 [L] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT50GF120 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
781 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
135 A |
| Test Condition |
800V, 50A, 1Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 50A |
| IGBT Type |
NPT |
| Gate Charge |
340 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
25ns/260ns |
| Switching Energy |
3.6mJ (on), 2.64mJ (off) |
Microchip Technology APT50GN120L2DQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3 |
| Mounting Style |
Through Hole |
| Base Product Number |
APT50GN120 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Configuration |
Single |
| Power Dissipation |
543 |
| Input Type |
Standard |
| Power - Max |
543 W |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
134 A |
| Collector Emitter Saturation Voltage |
1.7 |
| Test Condition |
800V, 50A, 2.2Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Continuous Collector Current |
134 A |
| IGBT Type |
NPT, Trench Field Stop |
| Gate Charge |
315 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
28ns/320ns |
| Switching Energy |
4495µJ (off) |
| Height |
5.21 mm |
| Length |
26.49 mm |
| Width |
20.5 mm |
Microchip Technology APT50GN60BDQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT50GN60 |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Continuous Collector Current Ic Max |
107 A |
| Current-Collector (Ic) (Max) |
107 A |
| Test Conditions |
400V, 50A, 4.3Ohm, 15V |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
366 W |
| Product Status |
Active |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Unit Weight |
1.340411 oz |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 50A |
| Continuous Collector Current |
107 A |
| Configuration |
Single |
| Power Dissipation |
366 |
| Input Type |
Standard |
| Power - Max |
366 W |
| Operating Temperature Range |
– 55 C to + 175 C |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Packaging |
Tube |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
325 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
20ns/230ns |
| Switching Energy |
1185µJ (on), 1565µJ (off) |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Width |
16.26 mm |
Microchip Technology APT50GS60BRDQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT50GS60 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Tradename |
Thunderbolt HS |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
Thunderbolt IGBT® |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
415 W |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
93 A |
| Test Condition |
400V, 40A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.15V @ 15V, 50A |
| Continuous Collector Current |
93 A |
| IGBT Type |
NPT |
| Gate Charge |
235 nC |
| Current - Collector Pulsed (Icm) |
195 A |
| Td (on/off) @ 25°C |
16ns/225ns |
| Switching Energy |
755µJ (off) |
| Reverse Recovery Time (trr) |
25 ns |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Width |
16.26 mm |
Microchip Technology APT50GS60BRG
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Configuration |
Single |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT50GS60 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Tradename |
Thunderbolt HS |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
Thunderbolt IGBT® |
| Mounting Type |
Through Hole |
| Power - Max |
415 W |
| Input Type |
Standard |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
93 A |
| Test Condition |
400V, 50A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.15V @ 15V, 50A |
| Continuous Collector Current |
93 A |
| IGBT Type |
NPT |
| Gate Charge |
235 nC |
| Current - Collector Pulsed (Icm) |
195 A |
| Td (on/off) @ 25°C |
16ns/225ns |
| Switching Energy |
755µJ (off) |
| Height |
5.31 mm |
| Length |
21.46 mm |
| Width |
16.26 mm |
Microchip Technology APT50GT120B2RDQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Mounting Style |
Through Hole |
| Base Product Number |
APT50GT120 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
Thunderbolt IGBT® |
| Power Dissipation |
625 |
| Input Type |
Standard |
| Power - Max |
625 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
94 A |
| Collector Emitter Saturation Voltage |
3.2 |
| Test Condition |
800V, 50A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 50A |
| Continuous Collector Current |
94 |
| IGBT Type |
NPT |
| Gate Charge |
340 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
24ns/230ns |
| Switching Energy |
2330µJ (off) |