Showing 2485–2496 of 3680 results
Microchip Technology APT50GT120B2RG
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Mounting Style |
Through Hole |
| Base Product Number |
APT50GT120 |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
Thunderbolt IGBT® |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
625 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
94 A |
| Test Condition |
800V, 50A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 50A |
| IGBT Type |
NPT |
| Gate Charge |
340 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
24ns/230ns |
| Switching Energy |
2330µJ (off) |
Microchip Technology APT50GT120LRDQ2G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Series |
Thunderbolt IGBT® |
| Package / Case |
TO-264-3, TO-264AA |
| Supplier Device Package |
TO-264 [L] |
| Base Product Number |
APT50GT120 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Power - Max |
694 W |
| Input Type |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
106 A |
| Test Condition |
800V, 50A, 1Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 50A |
| IGBT Type |
NPT |
| Gate Charge |
240 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
23ns/215ns |
| Switching Energy |
2585µJ (on), 1910µJ (off) |
Microchip Technology APT50GT120LRG
In stock
| Manufacturer |
Microchip |
|---|---|
| Mfr |
Microchip Technology |
| Subcategory |
IGBTs |
| Series |
Thunderbolt IGBT? |
| Packaging |
Tube |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Product Status |
Active |
| Package |
Tube |
| Technology |
Si |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Brand |
Microchip Technology / Atmel |
| Base Product Number |
APT50GT120 |
| Mounting Style |
Through Hole |
| Supplier Device Package |
TO-264 (L) |
| Package / Case |
TO-264-3, TO-264AA |
| Mounting Type |
Through Hole |
| Power Dissipation |
625 |
| Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 50A |
| Switching Energy |
-, 2.33mJ (off) |
| Td (on/off) @ 25°C |
24ns/230ns |
| Current - Collector Pulsed (Icm) |
150 A |
| Gate Charge |
340 nC |
| IGBT Type |
NPT |
| Continuous Collector Current |
94 |
| Test Condition |
800V, 50A, 4.7Ohm, 15V |
| Configuration |
Single |
| Collector Emitter Saturation Voltage |
3.2 |
| Current - Collector (Ic) (Max) |
50 A |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Product Type |
IGBT Transistors |
| Power - Max |
625 W |
| Input Type |
Standard |
| Product Category |
IGBT Transistors |
Microchip Technology APT54GA60B
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Minimum Operating Temperature |
– 55 C |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Mounting Style |
Through Hole |
| Base Product Number |
APT54GA60 |
| Maximum Operating Temperature |
+ 150 C |
| Min Operating Temperature |
-55 °C |
| Mount |
Through Hole |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 8™ |
| Max Operating Temperature |
150 °C |
| Mfr |
Microchip Technology |
| Max Power Dissipation |
416 W |
| Current - Collector (Ic) (Max) |
96 A |
| Test Condition |
400V, 32A, 4.7Ohm, 15V |
| Input Type |
Standard |
| Power - Max |
416 W |
| Collector Emitter Voltage (VCEO) |
600 V |
| Max Collector Current |
96 A |
| Collector Emitter Breakdown Voltage |
600 V |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Configuration |
Single |
| Element Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 32A |
| IGBT Type |
PT |
| Gate Charge |
158 nC |
| Current - Collector Pulsed (Icm) |
161 A |
| Td (on/off) @ 25°C |
17ns/112ns |
| Switching Energy |
534µJ (on), 466µJ (off) |
| Radiation Hardening |
No |
Microchip Technology APT64GA90B2D30
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Base Product Number |
APT64GA90 |
| Mfr |
Microchip Technology |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Series |
POWER MOS 8™ |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
500 W |
| Element Configuration |
Single |
| Power Dissipation |
500 |
| Input Type |
Standard |
| Power - Max |
500 W |
| Collector Emitter Voltage (VCEO) |
900 V |
| Max Collector Current |
117 A |
| Collector Emitter Breakdown Voltage |
900 V |
| Voltage - Collector Emitter Breakdown (Max) |
900 V |
| Current - Collector (Ic) (Max) |
117 A |
| Collector Emitter Saturation Voltage |
2.5 |
| Test Condition |
600V, 38A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 38A |
| Continuous Collector Current |
117 |
| IGBT Type |
PT |
| Gate Charge |
162 nC |
| Current - Collector Pulsed (Icm) |
193 A |
| Td (on/off) @ 25°C |
18ns/131ns |
| Switching Energy |
1192µJ (on), 1088µJ (off) |
| Radiation Hardening |
No |
Microchip Technology APT64GA90LD30
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3 |
| Supplier Device Package |
TO-264 [L] |
| Weight |
10.6 g |
| Base Product Number |
APT64GA90 |
| Collector- Emitter Voltage VCEO Max |
900 V |
| Collector-Emitter Breakdown Voltage |
900 V |
| Continuous Collector Current Ic Max |
117 A |
| Current-Collector (Ic) (Max) |
117 A |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mount |
Through Hole |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Pd - Power Dissipation |
500 W |
| Product Status |
Active |
| Test Conditions |
600V, 38A, 4.7Ohm, 15V |
| Tradename |
POWER MOS 8 |
| Unit Weight |
0.373904 oz |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Packaging |
Tube |
| Operating Temperature Range |
– 55 C to + 150 C |
| Voltage - Collector Emitter Breakdown (Max) |
900 V |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
500 W |
| Configuration |
Single |
| Element Configuration |
Single |
| Power Dissipation |
500 |
| Input Type |
Standard |
| Power - Max |
500 W |
| Collector Emitter Voltage (VCEO) |
900 V |
| Max Collector Current |
117 A |
| Series |
POWER MOS 8™ |
| Max Operating Temperature |
150 °C |
| Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 38A |
| Continuous Collector Current |
117 A |
| IGBT Type |
PT |
| Gate Charge |
162 nC |
| Current - Collector Pulsed (Icm) |
193 A |
| Td (on/off) @ 25°C |
18ns/131ns |
| Switching Energy |
1192µJ (on), 1088µJ (off) |
| Height |
5.21 mm |
| Length |
26.49 mm |
| Width |
20.5 mm |
| Radiation Hardening |
No |
Microchip Technology APT75GN120JDQ3
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Package / Case |
SOT-227-4 |
| Number of Pins |
4 |
| Supplier Device Package |
ISOTOP® |
| Weight |
30.000004 g |
| Base Product Number |
APT75GN120 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Collector-Emitter Breakdown Voltage |
1.2 kV |
| Continuous Collector Current Ic Max |
124 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Current-Collector (Ic) (Max) |
124 A |
| Maximum Operating Temperature |
+ 150 C |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Screw Mounts |
| Package |
Tube |
| Pd - Power Dissipation |
379 W |
| Product Status |
Active |
| Schedule B |
8541290080 |
| Unit Weight |
1.058219 oz |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount, Screw |
| Current - Collector Cutoff (Max) |
200 µA |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Max Power Dissipation |
379 W |
| Configuration |
Single |
| Element Configuration |
Single |
| Power Dissipation |
379 |
| Power - Max |
379 W |
| Input |
Standard |
| Collector Emitter Voltage (VCEO) |
1.2 kV |
| Max Collector Current |
124 A |
| Operating Temperature Range |
– 55 C to + 150 C |
| Max Operating Temperature |
150 °C |
| Packaging |
Tube |
| Input Capacitance |
4.8 nF |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Continuous Collector Current |
124 A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Input Capacitance (Cies) @ Vce |
4.8 nF @ 25 V |
| Height |
9.6 mm |
| Length |
38.2 mm |
| Width |
25.4 mm |
| Min Operating Temperature |
-55 °C |
| Radiation Hardening |
No |
Microchip Technology APT95GR65B2
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Maximum Operating Temperature |
+ 150 C |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Supplier Device Package |
T-MAX™ [B2] |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Base Product Number |
APT95GR65 |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
208 A |
| Current-Collector (Ic) (Max) |
208 A |
| Factory Pack QuantityFactory Pack Quantity |
1 |
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC |
| Manufacturer Part Number |
APT95GR65B2 |
| Pd - Power Dissipation |
892 W |
| Mounting Type |
Through Hole |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Number of Elements |
1 |
| Operating Temperature-Max |
175 °C |
| Operating Temperature-Min |
-55 °C |
| Package |
Tube |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
FLANGE MOUNT, R-PSFM-T3 |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Active |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Product Status |
Active |
| Input Type |
Standard |
| Power - Max |
892 W |
| Turn-off Time-Nom (toff) |
336 ns |
| Turn-on Time-Nom (ton) |
105 ns |
| Unit Weight |
0.211644 oz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Reach Compliance Code |
unknown |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
Single |
| Power Dissipation |
892 |
| Case Connection |
COLLECTOR |
| Risk Rank |
5.72 |
| Test Conditions |
433V, 95A, 4.3Ohm, 15V |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-247 |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 95A |
| Collector Current-Max (IC) |
208 A |
| Continuous Collector Current |
208 |
| IGBT Type |
NPT |
| Collector-Emitter Voltage-Max |
650 V |
| Gate Charge |
420 nC |
| Current - Collector Pulsed (Icm) |
400 A |
| Td (on/off) @ 25°C |
29ns/226ns |
| Switching Energy |
3.12mJ (on), 2.55mJ (off) |
Microchip Technology GN2470K4-G
In stock
| Manufacturer |
Microchip Technology |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
700V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
2.5W |
| Terminal Form |
GULL WING |
| Factory Lead Time |
14 Weeks |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSSO-G2 |
| Power Dissipation |
2.5W |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
700V |
| Max Collector Current |
1A |
| JEDEC-95 Code |
TO-252AA |
| Vce(on) (Max) @ Vge, Ic |
5V @ 13V, 3A |
| Continuous Collector Current |
1A |
| Current - Collector Pulsed (Icm) |
3.5A |
| Td (on/off) @ 25°C |
8ns/20ns |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.1mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |