Showing 2497–2508 of 3680 results
Microsemi Corporation APT100GN120B2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 100A, 1 Ω, 15V |
| Max Power Dissipation |
960W |
| Factory Lead Time |
24 Weeks |
| Packaging |
Tube |
| Published |
1999 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
HIGH RELIABILITY |
| Turn Off Delay Time |
615 ns |
| Pin Count |
3 |
| Turn On Time |
100 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 100A |
| Input Type |
Standard |
| Turn On Delay Time |
50 ns |
| Power - Max |
960W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
245A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Turn Off Time-Nom (toff) |
935 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
540nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
50ns/615ns |
| Switching Energy |
11mJ (on), 9.5mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT11GF120BRDQ1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
2005 |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 8A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Max Power Dissipation |
156W |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
ULTRA FAST |
| Voltage - Rated DC |
1.2kV |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Turn On Time |
12 ns |
| Pin Count |
3 |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3V |
| Max Collector Current |
25A |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
161 ns |
| Current Rating |
25A |
| IGBT Type |
NPT |
| Gate Charge |
65nC |
| Current - Collector Pulsed (Icm) |
24A |
| Td (on/off) @ 25°C |
7ns/100ns |
| Switching Energy |
300μJ (on), 285μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Microsemi Corporation APT11GF120KRG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 8A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Pin Count |
3 |
| Mount |
Through Hole |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
PURE MATTE TIN |
| Additional Feature |
FAST SWITCHING |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
156W |
| Current Rating |
25A |
| Published |
2005 |
| JESD-30 Code |
R-PSFM-T3 |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
161 ns |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
25A |
| JEDEC-95 Code |
TO-220AB |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
12 ns |
| Element Configuration |
Single |
| Case Connection |
ISOLATED |
| IGBT Type |
NPT |
| Gate Charge |
65nC |
| Current - Collector Pulsed (Icm) |
44A |
| Td (on/off) @ 25°C |
7ns/100ns |
| Switching Energy |
300μJ (on), 285μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT11GP60BDQBG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Test Conditions |
400V, 11A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Current Rating |
41A |
| Mount |
Through Hole |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Voltage - Rated DC |
600V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Series |
POWER MOS 7® |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Turn On Time |
16 ns |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
187W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-247AD |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 11A |
| Turn Off Time-Nom (toff) |
150 ns |
| IGBT Type |
PT |
| Gate Charge |
40nC |
| Current - Collector Pulsed (Icm) |
45A |
| Td (on/off) @ 25°C |
7ns/29ns |
| Switching Energy |
46μJ (on), 90μJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT15GP60BG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Max Power Dissipation |
250W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 15A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1999 |
| Series |
POWER MOS 7® |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Turn On Time |
20 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 15A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
56A |
| JEDEC-95 Code |
TO-247AD |
| Pin Count |
3 |
| Current Rating |
56A |
| Turn Off Time-Nom (toff) |
157 ns |
| IGBT Type |
PT |
| Gate Charge |
55nC |
| Current - Collector Pulsed (Icm) |
65A |
| Td (on/off) @ 25°C |
8ns/29ns |
| Switching Energy |
130μJ (on), 121μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSFM-T3 |
| Lead Free |
Lead Free |
Microsemi Corporation APT15GT120BRDQ1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-30 Code |
R-PSFM-T3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 15A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
Thunderbolt IGBT® |
| JESD-609 Code |
e1 |
| Published |
1999 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
HIGH SPEED |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
250W |
| Current Rating |
36A |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
29 Weeks |
| IGBT Type |
NPT |
| Gate Charge |
105nC |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
36A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
21 ns |
| Vce(on) (Max) @ Vge, Ic |
3.6V @ 15V, 15A |
| Continuous Collector Current |
36A |
| Turn Off Time-Nom (toff) |
137 ns |
| Case Connection |
COLLECTOR |
| Element Configuration |
Single |
| Current - Collector Pulsed (Icm) |
45A |
| Td (on/off) @ 25°C |
10ns/85ns |
| Switching Energy |
585μJ (on), 260μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
5.31mm |
| Length |
21.46mm |
| Width |
16.26mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Input Type |
Standard |
| Lead Free |
Contains Lead |
Microsemi Corporation APT15GT60BRDQ1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 15A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
42A |
| Factory Lead Time |
25 Weeks |
| Series |
Thunderbolt IGBT® |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
184W |
| Packaging |
Tube |
| Pin Count |
3 |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 15A |
| Turn Off Time-Nom (toff) |
225 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
42A |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
14 ns |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| IGBT Type |
NPT |
| Gate Charge |
75nC |
| Current - Collector Pulsed (Icm) |
45A |
| Td (on/off) @ 25°C |
6ns/105ns |
| Switching Energy |
150μJ (on), 215μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT15GT60KRG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 15A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Max Power Dissipation |
184W |
| Mount |
Through Hole |
| Series |
Thunderbolt IGBT® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
PURE MATTE TIN |
| Voltage - Rated DC |
600V |
| Packaging |
Tube |
| Current Rating |
42A |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 15A |
| Turn Off Time-Nom (toff) |
225 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.5V |
| Max Collector Current |
42A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
14 ns |
| Pin Count |
3 |
| Element Configuration |
Single |
| IGBT Type |
NPT |
| Gate Charge |
75nC |
| Current - Collector Pulsed (Icm) |
45A |
| Td (on/off) @ 25°C |
6ns/105ns |
| Switching Energy |
150μJ (on), 215μJ (off) |
| Gate-Emitter Thr Voltage-Max |
5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |