Showing 2509–2520 of 3680 results
Microsemi Corporation APT20GF120BRDQ1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
2005 |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 15A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
36A |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
200W |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 15A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
36A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
19 ns |
| Turn Off Time-Nom (toff) |
255 ns |
| IGBT Type |
NPT |
| Pin Count |
3 |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
64A |
| Td (on/off) @ 25°C |
10ns/120ns |
| Switching Energy |
895μJ (on), 840μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
Microsemi Corporation APT20GF120BRG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Current Rating |
32A |
| Mount |
Through Hole |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
200W |
| Published |
2000 |
| Pin Count |
3 |
| Turn On Time |
20 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 15A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
32A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
175 ns |
| IGBT Type |
NPT |
| Gate Charge |
95nC |
| Current - Collector Pulsed (Icm) |
64A |
| Td (on/off) @ 25°C |
17ns/105ns |
| Switching Energy |
2.7mJ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT20GN60BDQ1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 20A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Pin Count |
3 |
| Published |
1999 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
136W |
| Current Rating |
40A |
| Mount |
Through Hole |
| Factory Lead Time |
25 Weeks |
| Turn Off Time-Nom (toff) |
290 ns |
| Element Configuration |
Single |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Turn On Time |
19 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 20A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
120nC |
| JESD-30 Code |
R-PSFM-T3 |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
9ns/140ns |
| Switching Energy |
230μJ (on), 580μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
Microsemi Corporation APT20GT60BRDQ1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Current Rating |
43A |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 20A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1999 |
| Series |
Thunderbolt IGBT® |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
174W |
| Mount |
Through Hole |
| Factory Lead Time |
25 Weeks |
| Turn Off Time-Nom (toff) |
160 ns |
| IGBT Type |
NPT |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
43A |
| Turn On Time |
17 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
8ns/80ns |
| Switching Energy |
215μJ (on), 245μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Microsemi Corporation APT25GN120BG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 25A, 1 Ω, 15V |
| Turn Off Delay Time |
280 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
67A |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
HIGH RELIABILITY |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
272W |
| Packaging |
Tube |
| Pin Count |
3 |
| Turn On Time |
39 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 25A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
22 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
67A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
560 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
155nC |
| Current - Collector Pulsed (Icm) |
75A |
| Td (on/off) @ 25°C |
22ns/280ns |
| Switching Energy |
2.15μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT25GP90BDQ1G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Test Conditions |
600V, 40A, 4.3Ohm, 15V |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Not For New Designs |
| Series |
POWER MOS 7® |
| Published |
1999 |
| Packaging |
Tube |
| Min Operating Temperature |
-55°C |
| Operating Temperature |
-55°C~150°C TJ |
| Current-Collector (Ic) (Max) |
72A |
| Collector-Emitter Breakdown Voltage |
900V |
| Supplier Device Package |
TO-247 [B] |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
19 Weeks |
| Max Power Dissipation |
417W |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 25A |
| RoHS Status |
RoHS Compliant |
| Switching Energy |
370μJ (off) |
| Td (on/off) @ 25°C |
13ns/55ns |
| Current - Collector Pulsed (Icm) |
110A |
| Gate Charge |
110nC |
| IGBT Type |
PT |
| Voltage - Collector Emitter Breakdown (Max) |
900V |
| Voltage - Rated DC |
900V |
| Max Collector Current |
72A |
| Collector Emitter Voltage (VCEO) |
900V |
| Power - Max |
417W |
| Input Type |
Standard |
| Element Configuration |
Single |
| Current Rating |
72A |
| Lead Free |
Lead Free |
Microsemi Corporation APT25GP90BG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Series |
POWER MOS 7® |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
900V |
| Test Conditions |
600V, 25A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Max Power Dissipation |
417W |
| Factory Lead Time |
30 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
900V |
| Published |
1999 |
| Current Rating |
72A |
| Turn On Time |
29 ns |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 25A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
900V |
| Max Collector Current |
72A |
| JEDEC-95 Code |
TO-247AD |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Turn Off Time-Nom (toff) |
190 ns |
| IGBT Type |
PT |
| Gate Charge |
110nC |
| Current - Collector Pulsed (Icm) |
110A |
| Td (on/off) @ 25°C |
13ns/55ns |
| Switching Energy |
370μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT25GR120B
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Input Type |
Standard |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 25A, 4.3 Ω, 15V |
| Turn Off Delay Time |
122 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2001 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
521W |
| Element Configuration |
Single |
| Factory Lead Time |
18 Weeks |
| Power - Max |
521W |
| Turn On Delay Time |
16 ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
75A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 25A |
| IGBT Type |
NPT |
| Gate Charge |
203nC |
| Current - Collector Pulsed (Icm) |
100A |
| Td (on/off) @ 25°C |
16ns/122ns |
| Switching Energy |
742μJ (on), 427μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT25GR120SSCD10
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 25A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
521W |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
521W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
75A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 25A |
| IGBT Type |
NPT |
| Gate Charge |
203nC |
| Current - Collector Pulsed (Icm) |
100A |
| Td (on/off) @ 25°C |
16ns/122ns |
| Switching Energy |
434μJ (on), 466μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT30GN60BG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Max Power Dissipation |
203W |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
600V |
| Packaging |
Tube |
| Current Rating |
63A |
| Turn On Time |
26 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
63A |
| JEDEC-95 Code |
TO-247AD |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Turn Off Time-Nom (toff) |
255 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
165nC |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
12ns/155ns |
| Switching Energy |
525μJ (on), 700μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT30GS60BRDLG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 9.1 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation |
250W |
| Packaging |
Tube |
| JESD-30 Code |
R-PSFM-T3 |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
3.15V @ 15V, 30A |
| Input Type |
Standard |
| Power - Max |
250W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
54A |
| JEDEC-95 Code |
TO-247AD |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Turn Off Time-Nom (toff) |
412 ns |
| IGBT Type |
NPT |
| Gate Charge |
145nC |
| Current - Collector Pulsed (Icm) |
113A |
| Td (on/off) @ 25°C |
16ns/360ns |
| Switching Energy |
570μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT30GT60BRDQ2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
1999 |
| Pin Count |
3 |
| Series |
Thunderbolt IGBT® |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
250W |
| Current Rating |
64A |
| Mount |
Through Hole |
| Factory Lead Time |
25 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
64A |
| Reverse Recovery Time |
22 ns |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
32 ns |
| Turn Off Time-Nom (toff) |
345 ns |
| IGBT Type |
NPT |
| JESD-30 Code |
R-PSFM-T3 |
| Gate Charge |
7.5nC |
| Current - Collector Pulsed (Icm) |
110A |
| Td (on/off) @ 25°C |
12ns/225ns |
| Switching Energy |
80μJ (on), 605μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |