Showing 2521–2532 of 3680 results
Microsemi Corporation APT30GT60BRG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Series |
Thunderbolt IGBT® |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Pin Count |
3 |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
250W |
| Current Rating |
64A |
| Published |
1999 |
| JESD-30 Code |
R-PSFM-T3 |
| IGBT Type |
NPT |
| Gate Charge |
145nC |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
64A |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
32 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
| Continuous Collector Current |
64A |
| Turn Off Time-Nom (toff) |
345 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Current - Collector Pulsed (Icm) |
110A |
| Td (on/off) @ 25°C |
12ns/225ns |
| Switching Energy |
525μJ (on), 600μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Height |
5.31mm |
| Length |
21.46mm |
| Width |
16.26mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT33GF120LRDQ2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 25A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
64A |
| Factory Lead Time |
38 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
357W |
| Packaging |
Tube |
| Pin Count |
3 |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 25A |
| Turn Off Time-Nom (toff) |
355 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
64A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
31 ns |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| IGBT Type |
NPT |
| Gate Charge |
170nC |
| Current - Collector Pulsed (Icm) |
75A |
| Td (on/off) @ 25°C |
14ns/185ns |
| Switching Energy |
1.315mJ (on), 1.515mJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT35GA90B
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Max Power Dissipation |
290W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
900V |
| Number of Elements |
1 |
| Test Conditions |
600V, 18A, 10 Ω, 15V |
| Packaging |
Tube |
| Series |
POWER MOS 8™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
LOW CONDUCTION LOSS |
| Mount |
Through Hole |
| Factory Lead Time |
32 Weeks |
| Turn On Time |
25 ns |
| Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 18A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
290W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
900V |
| Max Collector Current |
63A |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Turn Off Time-Nom (toff) |
298 ns |
| IGBT Type |
PT |
| Gate Charge |
84nC |
| Current - Collector Pulsed (Icm) |
105A |
| Td (on/off) @ 25°C |
12ns/104ns |
| Switching Energy |
642μJ (on), 382μJ (off) |
| Radiation Hardening |
No |
| Element Configuration |
Single |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT35GN120BG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 35A, 2.2 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
1999 |
| Pin Count |
3 |
| JESD-609 Code |
e1 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
HIGH RELIABILITY |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
379W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
94A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Continuous Collector Current |
94A |
| Qualification Status |
Not Qualified |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
94A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
46 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 35A |
| Turn Off Time-Nom (toff) |
465 ns |
| IGBT Type |
NPT, Trench Field Stop |
| JESD-30 Code |
R-PSFM-T3 |
| Gate Charge |
220nC |
| Current - Collector Pulsed (Icm) |
105A |
| Td (on/off) @ 25°C |
24ns/300ns |
| Switching Energy |
2.315mJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
5.31mm |
| Length |
21.46mm |
| Width |
16.26mm |
| RoHS Status |
RoHS Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Microsemi Corporation APT35GP120B2DQ2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 35A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Voltage - Rated DC |
1.2kV |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Mount |
Through Hole |
| Factory Lead Time |
33 Weeks |
| Turn On Time |
36 ns |
| Current Rating |
96A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
96A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 35A |
| Turn Off Time-Nom (toff) |
220 ns |
| Max Power Dissipation |
543W |
| IGBT Type |
PT |
| Gate Charge |
150nC |
| Current - Collector Pulsed (Icm) |
140A |
| Td (on/off) @ 25°C |
16ns/95ns |
| Switching Energy |
750μJ (on), 680μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Microsemi Corporation APT36GA60B
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1999 |
| Series |
POWER MOS 8™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
PURE MATTE TIN |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
290W |
| Mount |
Through Hole |
| Factory Lead Time |
29 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
262 ns |
| Input Type |
Standard |
| Power - Max |
290W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
65A |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
29 ns |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSFM-T3 |
| IGBT Type |
PT |
| Gate Charge |
102nC |
| Current - Collector Pulsed (Icm) |
109A |
| Td (on/off) @ 25°C |
16ns/122ns |
| Switching Energy |
307μJ (on), 254μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| Case Connection |
COLLECTOR |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT40GP90B2DQ2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Voltage - Rated DC |
900V |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
900V |
| Number of Elements |
1 |
| Test Conditions |
600V, 40A, 4.3 Ω, 15V |
| Packaging |
Tube |
| Published |
1999 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
POWER MOS 7® |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
LOW CONDUCTION LOSS |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
220 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
900V |
| Max Collector Current |
101A |
| Turn On Time |
37 ns |
| Current Rating |
101A |
| Max Power Dissipation |
543W |
| IGBT Type |
PT |
| Gate Charge |
145nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
14ns/90ns |
| Switching Energy |
795μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Microsemi Corporation APT40GR120B2SCD10
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Max Power Dissipation |
500W |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 40A, 4.3 Ω, 15V |
| Turn Off Delay Time |
166 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Factory Lead Time |
22 Weeks |
| Input Type |
Standard |
| Element Configuration |
Single |
| Turn On Delay Time |
20 ns |
| Power - Max |
500W |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
88A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
| IGBT Type |
NPT |
| Gate Charge |
210nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
20ns/166ns |
| Switching Energy |
929μJ (on), 1070μJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT40GR120S
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 40A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
500W |
| Input Type |
Standard |
| Power - Max |
500W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
88A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
| IGBT Type |
NPT |
| Gate Charge |
210nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
22ns/163ns |
| Switching Energy |
1.38mJ (on), 906μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT43GA90B
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
900V |
| Number of Elements |
1 |
| Test Conditions |
600V, 25A, 4.7 Ω, 15V |
| Additional Feature |
LOW CONDUCTION LOSSES |
| Factory Lead Time |
6 Weeks |
| Published |
1999 |
| Series |
POWER MOS 8™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Operating Temperature |
-55°C~150°C TJ |
| Max Power Dissipation |
337W |
| Max Collector Current |
78A |
| Turn On Time |
28 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
337W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
900V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 25A |
| Turn Off Time-Nom (toff) |
246 ns |
| IGBT Type |
PT |
| Gate Charge |
116nC |
| Current - Collector Pulsed (Icm) |
129A |
| Td (on/off) @ 25°C |
12ns/82ns |
| Switching Energy |
875μJ (on), 425μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT44GA60B
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 26A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Max Power Dissipation |
337W |
| Factory Lead Time |
22 Weeks |
| Series |
POWER MOS 8™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
LOW CONDUCTION LOSS |
| Packaging |
Tube |
| Pin Count |
3 |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 26A |
| Turn Off Time-Nom (toff) |
208 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
337W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
78A |
| Turn On Time |
29 ns |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| IGBT Type |
PT |
| Gate Charge |
128nC |
| Current - Collector Pulsed (Icm) |
130A |
| Td (on/off) @ 25°C |
16ns/84ns |
| Switching Energy |
409μJ (on), 258μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT45GR65BSCD10
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Factory Lead Time |
22 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
433V, 45A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2001 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
543W |
| Input Type |
Standard |
| Power - Max |
543W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
118A |
| Reverse Recovery Time |
80 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 45A |
| IGBT Type |
NPT |
| Gate Charge |
203nC |
| Current - Collector Pulsed (Icm) |
224A |
| Td (on/off) @ 25°C |
15ns/100ns |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
RoHS Compliant |