Showing 2533–2544 of 3680 results
Microsemi Corporation APT45GR65SSCD10
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
433V, 45A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2001 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
22 Weeks |
| Input Type |
Standard |
| Max Power Dissipation |
543W |
| Power - Max |
543W |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
118A |
| Reverse Recovery Time |
80 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 45A |
| IGBT Type |
NPT |
| Gate Charge |
203nC |
| Current - Collector Pulsed (Icm) |
224A |
| Td (on/off) @ 25°C |
15ns/100ns |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT50GP60B2DQ2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Voltage - Rated DC |
600V |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 50A, 4.3 Ω, 15V |
| Packaging |
Tube |
| Published |
1999 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
POWER MOS 7® |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
LOW CONDUCTION LOSS |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
200 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
150A |
| Turn On Time |
55 ns |
| Current Rating |
150A |
| Max Power Dissipation |
625W |
| IGBT Type |
PT |
| Gate Charge |
165nC |
| Current - Collector Pulsed (Icm) |
190A |
| Td (on/off) @ 25°C |
19ns/85ns |
| Switching Energy |
465μJ (on), 635μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Microsemi Corporation APT50GR120L
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Factory Lead Time |
21 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 50A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
694W |
| Input Type |
Standard |
| Power - Max |
694W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
117A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 50A |
| IGBT Type |
NPT |
| Gate Charge |
445nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
28ns/237ns |
| Switching Energy |
2.14mJ (on), 1.48mJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT50GT60BRG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Series |
Thunderbolt IGBT® |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 50A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Max Power Dissipation |
446W |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC |
600V |
| Published |
1999 |
| Current Rating |
110A |
| Turn On Time |
46 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 50A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
110A |
| JEDEC-95 Code |
TO-247AD |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Turn Off Time-Nom (toff) |
365 ns |
| IGBT Type |
NPT |
| Gate Charge |
240nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
14ns/240ns |
| Switching Energy |
995μJ (on), 1070μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT54GA60BD30
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 32A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| JESD-30 Code |
R-PSFM-T3 |
| Published |
1999 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Pure Matte Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
416W |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
33 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 32A |
| Case Connection |
COLLECTOR |
| Power - Max |
416W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
96A |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
37 ns |
| Turn Off Time-Nom (toff) |
291 ns |
| IGBT Type |
PT |
| Element Configuration |
Single |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
161A |
| Td (on/off) @ 25°C |
17ns/112ns |
| Switching Energy |
534μJ (on), 466μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| Input Type |
Standard |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT65GP60B2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 65A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Voltage - Rated DC |
600V |
| Packaging |
Tube |
| Series |
POWER MOS 7® |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
LOW CONDUCTION LOSS |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Turn On Time |
84 ns |
| Current Rating |
100A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
100A |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 65A |
| Turn Off Time-Nom (toff) |
219 ns |
| Max Power Dissipation |
833W |
| IGBT Type |
PT |
| Gate Charge |
210nC |
| Current - Collector Pulsed (Icm) |
250A |
| Td (on/off) @ 25°C |
30ns/91ns |
| Switching Energy |
605μJ (on), 896μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Microsemi Corporation APT65GP60L2DQ2G
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Voltage - Rated DC |
600V |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 65A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1999 |
| Series |
POWER MOS 7® |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 65A |
| Turn Off Time-Nom (toff) |
220 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
198A |
| Turn On Time |
85 ns |
| Current Rating |
198A |
| Max Power Dissipation |
833W |
| IGBT Type |
PT |
| Gate Charge |
210nC |
| Current - Collector Pulsed (Icm) |
250A |
| Td (on/off) @ 25°C |
30ns/90ns |
| Switching Energy |
605μJ (on), 895μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Microsemi Corporation APT70GR120B2
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 |
| Current-Collector (Ic) (Max) |
160A |
| Test Conditions |
600V, 70A, 4.3Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Factory Lead Time |
18 Weeks |
| Input Type |
Standard |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power - Max |
961W |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 70A |
| IGBT Type |
NPT |
| Gate Charge |
544nC |
| Current - Collector Pulsed (Icm) |
280A |
| Td (on/off) @ 25°C |
33ns/278ns |
| Switching Energy |
3.82mJ (on), 2.58mJ (off) |
| RoHS Status |
RoHS Compliant |
Microsemi Corporation APT70GR120L
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Input Type |
Standard |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 70A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
961W |
| Element Configuration |
Single |
| Factory Lead Time |
18 Weeks |
| Polarity/Channel Type |
N-CHANNEL |
| Power - Max |
961W |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
160A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 70A |
| IGBT Type |
NPT |
| Gate Charge |
544nC |
| Current - Collector Pulsed (Icm) |
280A |
| Td (on/off) @ 25°C |
33ns/278ns |
| Switching Energy |
3.82mJ (on), 2.58mJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT70GR65B
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
433V, 70A, 4.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
22 Weeks |
| Input Type |
Standard |
| Max Power Dissipation |
595W |
| Power - Max |
595W |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
134A |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 70A |
| IGBT Type |
NPT |
| Gate Charge |
305nC |
| Current - Collector Pulsed (Icm) |
260A |
| Td (on/off) @ 25°C |
19ns/170ns |
| Switching Energy |
1.51mJ (on), 1.46mJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT75GN120LG
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
1999 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Weight |
10.6g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 75A, 1 Ω, 15V |
| Turn Off Delay Time |
620 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
HIGH RELIABILITY |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
833W |
| Current Rating |
200A |
| Packaging |
Tube |
| JESD-30 Code |
R-PSFM-T3 |
| Turn Off Time-Nom (toff) |
925 ns |
| IGBT Type |
Trench Field Stop |
| Input Type |
Standard |
| Turn On Delay Time |
60 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
200A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
101 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Continuous Collector Current |
200A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Gate Charge |
425nC |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
60ns/620ns |
| Switching Energy |
8620μJ (on), 11400μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
5.21mm |
| Length |
26.49mm |
| Width |
20.5mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Microsemi Corporation APT80GA90LD40
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| JESD-609 Code |
e1 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Collector-Emitter Breakdown Voltage |
900V |
| Test Conditions |
600V, 47A, 4.7 Ω, 15V |
| Packaging |
Tube |
| Published |
1999 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Factory Lead Time |
29 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Series |
POWER MOS 8™ |
| Max Power Dissipation |
625W |
| Reverse Recovery Time |
25 ns |
| Turn On Time |
49 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
900V |
| Max Collector Current |
145A |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 47A |
| Turn Off Time-Nom (toff) |
320 ns |
| IGBT Type |
PT |
| Gate Charge |
200nC |
| Current - Collector Pulsed (Icm) |
239A |
| Td (on/off) @ 25°C |
18ns/149ns |
| Switching Energy |
1652μJ (on), 1389μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |